WMT04P10TS WAYON
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; Idm: -14.4A; 3.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 3.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; Idm: -14.4A; 3.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 3.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 597 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 244+ | 0.29 EUR |
| 272+ | 0.26 EUR |
| 309+ | 0.23 EUR |
| 341+ | 0.21 EUR |
| 1000+ | 0.2 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMT04P10TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; Idm: -14.4A; 3.5W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -3.6A, Pulsed drain current: -14.4A, Power dissipation: 3.5W, Case: SOT223, Gate-source voltage: ±20V, On-state resistance: 0.17Ω, Mounting: SMD, Gate charge: 19nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMT04P10TS nach Preis ab 0.21 EUR bis 0.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WMT04P10TS | Hersteller : WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; Idm: -14.4A; 3.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -3.6A Pulsed drain current: -14.4A Power dissipation: 3.5W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 597 Stücke: Lieferzeit 14-21 Tag (e) |
|