WMT05N12TS WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 4.6A; Idm: 18.4A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 4.6A
Pulsed drain current: 18.4A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 4.6A; Idm: 18.4A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 4.6A
Pulsed drain current: 18.4A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 495 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 222+ | 0.32 EUR |
| 246+ | 0.29 EUR |
| 315+ | 0.23 EUR |
| 334+ | 0.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMT05N12TS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 120V; 4.6A; Idm: 18.4A; 3W; SOT223, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 120V, Drain current: 4.6A, Pulsed drain current: 18.4A, Power dissipation: 3W, Case: SOT223, Gate-source voltage: ±20V, On-state resistance: 75mΩ, Mounting: SMD, Gate charge: 23nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMT05N12TS nach Preis ab 0.21 EUR bis 0.61 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
WMT05N12TS | Hersteller : WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 4.6A; Idm: 18.4A; 3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 4.6A Pulsed drain current: 18.4A Power dissipation: 3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 495 Stücke: Lieferzeit 14-21 Tag (e) |
|