WMT05N12TS WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 4.6A; Idm: 18.4A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 4.6A
Pulsed drain current: 18.4A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 4.6A; Idm: 18.4A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 4.6A
Pulsed drain current: 18.4A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 232+ | 0.31 EUR |
| 258+ | 0.28 EUR |
| 317+ | 0.23 EUR |
| 336+ | 0.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMT05N12TS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 120V; 4.6A; Idm: 18.4A; 3W; SOT223, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 120V, Drain current: 4.6A, Pulsed drain current: 18.4A, Power dissipation: 3W, Case: SOT223, Gate-source voltage: ±20V, On-state resistance: 75mΩ, Mounting: SMD, Gate charge: 23nC, Kind of package: reel; tape, Kind of channel: enhancement.