WMX3N150D1 WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.7Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.7Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 44+ | 1.66 EUR |
| 48+ | 1.5 EUR |
| 57+ | 1.27 EUR |
| 60+ | 1.2 EUR |
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Technische Details WMX3N150D1 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W, Type of transistor: N-MOSFET, Technology: WMOS™ D1, Polarisation: unipolar, Drain-source voltage: 1.5kV, Drain current: 3A, Pulsed drain current: 12A, Power dissipation: 90W, Case: TO3PF, Gate-source voltage: ±30V, On-state resistance: 5.7Ω, Mounting: THT, Gate charge: 40nC, Kind of package: tube, Kind of channel: enhancement.