WMX4N150D1 WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W
Technology: WMOS™ D1
Mounting: THT
Power dissipation: 90W
Case: TO3PF
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1.5kV
Drain current: 4A
On-state resistance: 5.4Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 41nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W
Technology: WMOS™ D1
Mounting: THT
Power dissipation: 90W
Case: TO3PF
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1.5kV
Drain current: 4A
On-state resistance: 5.4Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 41nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 281 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
40+ | 1.8 EUR |
44+ | 1.63 EUR |
57+ | 1.27 EUR |
60+ | 1.2 EUR |
900+ | 1.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMX4N150D1 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W, Technology: WMOS™ D1, Mounting: THT, Power dissipation: 90W, Case: TO3PF, Kind of package: tube, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 16A, Drain-source voltage: 1.5kV, Drain current: 4A, On-state resistance: 5.4Ω, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 41nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMX4N150D1 nach Preis ab 1.2 EUR bis 1.8 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
WMX4N150D1 | Hersteller : WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W Technology: WMOS™ D1 Mounting: THT Power dissipation: 90W Case: TO3PF Kind of package: tube Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1.5kV Drain current: 4A On-state resistance: 5.4Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 41nC |
auf Bestellung 281 Stücke: Lieferzeit 14-21 Tag (e) |
|