WNSC2D301200CW6Q WeEn Semiconductors
Hersteller: WeEn SemiconductorsDescription: DIODE ARR SIC 1200V 30A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
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Technische Details WNSC2D301200CW6Q WeEn Semiconductors
Description: DIODE ARR SIC 1200V 30A TO247-3, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 30A, Supplier Device Package: TO-247-3, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A, Current - Reverse Leakage @ Vr: 150 µA @ 1200 V.