WNSC2M75120R6Q WeEn Semiconductors

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38.1A; Idm: 100A; 366W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 38.1A, Pulsed drain current: 100A, Power dissipation: 366W, Case: TO247-4, Gate-source voltage: -4...18V, On-state resistance: 0.105Ω, Mounting: THT, Gate charge: 62nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal.