YJ4N60CI YANGJIE TECHNOLOGY
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
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Technische Details YJ4N60CI YANGJIE TECHNOLOGY
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 33W; TO220FP, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 4A, Pulsed drain current: 16A, Power dissipation: 33W, Case: TO220FP, Gate-source voltage: ±20V, On-state resistance: 2.5Ω, Mounting: THT, Gate charge: 20nC, Kind of package: tube, Kind of channel: enhanced.