Produkte > YANGJIE TECHNOLOGY > YJD80G06A
YJD80G06A

YJD80G06A YANGJIE TECHNOLOGY

pVersion=0046&contRep=ZT&docId=005056AB82531EE98AC0601B577178BF&compId=YJD80G06A.pdf?ci_sign=71f33d3591768dd4cf3150a6a0499c6d007ece77 Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 56A; 42.5W
Type of transistor: N-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 56A
Pulsed drain current: 240A
Power dissipation: 42.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
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Technische Details YJD80G06A YANGJIE TECHNOLOGY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 56A; 42.5W, Type of transistor: N-MOSFET, Technology: SPLIT GATE TRENCH, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 56A, Pulsed drain current: 240A, Power dissipation: 42.5W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 11mΩ, Mounting: SMD, Gate charge: 31nC, Kind of package: reel; tape, Kind of channel: enhancement.