YJG70G06A YANGJIE TECHNOLOGY


pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8BFEC4AA3541E0C8&compId=YJG70G06A.pdf?ci_sign=aa6b22e13f025f15e7c523ec63e5d796b97674b9 Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 44A; 28W
Type of transistor: N-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 44A
Pulsed drain current: 210A
Power dissipation: 28W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
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Technische Details YJG70G06A YANGJIE TECHNOLOGY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 44A; 28W, Type of transistor: N-MOSFET, Technology: SPLIT GATE TRENCH, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 44A, Pulsed drain current: 210A, Power dissipation: 28W, Case: DFN5060-8, Gate-source voltage: ±20V, On-state resistance: 9.5mΩ, Mounting: SMD, Gate charge: 34nC, Kind of package: reel; tape, Kind of channel: enhancement.