YJL2312A

YJL2312A YANGJIE TECHNOLOGY


YJL2312A.pdf
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 5.4A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Pulsed drain current: 27A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1490 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
1170+0.061 EUR
1300+0.055 EUR
1470+0.049 EUR
Mindestbestellmenge: 1170
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Technische Details YJL2312A YANGJIE TECHNOLOGY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 5.4A; 1.2W, Type of transistor: N-MOSFET, Technology: TRENCH POWER LV, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 5.4A, Pulsed drain current: 27A, Power dissipation: 1.2W, Case: SOT23, Gate-source voltage: ±10V, On-state resistance: 39mΩ, Mounting: SMD, Gate charge: 4.6nC, Kind of package: reel; tape, Kind of channel: enhancement.