YJL2312A YANGJIE TECHNOLOGY
Hersteller: YANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 5.4A; 1.2W
Mounting: SMD
Drain-source voltage: 20V
Drain current: 5.4A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.6nC
Technology: TRENCH POWER LV
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 27A
Case: SOT23
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1180+ | 0.061 EUR |
| 1310+ | 0.055 EUR |
| 1710+ | 0.042 EUR |
| 1810+ | 0.04 EUR |
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Technische Details YJL2312A YANGJIE TECHNOLOGY
Description: SOT-23 N 20V 6.8A Transistors F, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V.
Weitere Produktangebote YJL2312A nach Preis ab 0.044 EUR bis 0.062 EUR
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YJL2312A | Hersteller : Yangjie Technology |
Description: SOT-23 N 20V 6.8A Transistors F Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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