Produkte > YANGJIE TECHNOLOGY > YJQ15GP10A
YJQ15GP10A

YJQ15GP10A YANGJIE TECHNOLOGY

pVersion=0046&contRep=ZT&docId=005056AB90B41EDBA1B33760C8C240C7&compId=YJQ15GP10A.pdf?ci_sign=cf10b2691da003efc83a25b5adc66847c6b5c287 Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A
Type of transistor: P-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -9.5A
Pulsed drain current: -45A
Power dissipation: 17.2W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 3.98nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 746 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
203+0.35 EUR
278+0.26 EUR
307+0.23 EUR
325+0.22 EUR
500+0.21 EUR
Mindestbestellmenge: 203
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Technische Details YJQ15GP10A YANGJIE TECHNOLOGY

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A, Type of transistor: P-MOSFET, Technology: SPLIT GATE TRENCH, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -9.5A, Pulsed drain current: -45A, Power dissipation: 17.2W, Case: DFN3.3x3.3 EP, Gate-source voltage: ±20V, On-state resistance: 0.12Ω, Mounting: SMD, Gate charge: 3.98nC, Kind of package: reel; tape, Kind of channel: enhancement.