Suchergebnisse für "yjq15gp10a" : 2
Art der Ansicht :
Mindestbestellmenge: 203
Im Einkaufswagen
Stück im Wert von UAH
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YJQ15GP10A | YANGJIE TECHNOLOGY |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A Type of transistor: P-MOSFET Technology: SPLIT GATE TRENCH Polarisation: unipolar Drain-source voltage: -100V Drain current: -9.5A Pulsed drain current: -45A Power dissipation: 17.2W Case: DFN3.3x3.3 EP Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 3.98nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 746 Stücke: Lieferzeit 14-21 Tag (e) |
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| YJQ15GP10A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A
Type of transistor: P-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -9.5A
Pulsed drain current: -45A
Power dissipation: 17.2W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 3.98nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A
Type of transistor: P-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -9.5A
Pulsed drain current: -45A
Power dissipation: 17.2W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 3.98nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 746 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 203+ | 0.35 EUR |
| 278+ | 0.26 EUR |
| 307+ | 0.23 EUR |
| 325+ | 0.22 EUR |
| 500+ | 0.21 EUR |