YJQ35G10A YANGJIE TECHNOLOGY
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 120A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 120A
Power dissipation: 54W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 120A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 120A
Power dissipation: 54W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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Technische Details YJQ35G10A YANGJIE TECHNOLOGY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 120A; 54W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 35A, Pulsed drain current: 120A, Power dissipation: 54W, Case: DFN3.3x3.3, Gate-source voltage: ±20V, On-state resistance: 20mΩ, Mounting: SMD, Gate charge: 20nC, Kind of package: reel; tape, Kind of channel: enhancement.