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YJS2022A

YJS2022A YANGJIE TECHNOLOGY

pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8EF39C72E8C800C7&compId=YJS2022A.pdf?ci_sign=9bba0981fe8cb53b2b113b911caf68eb14978f0e Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER MV; unipolar; 20V; -10.4A; 3W
Type of transistor: P-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: -10.4A
Pulsed drain current: -55A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±10V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 72.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 8787 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
275+0.26 EUR
400+0.18 EUR
589+0.12 EUR
736+0.097 EUR
782+0.092 EUR
Mindestbestellmenge: 125
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Technische Details YJS2022A YANGJIE TECHNOLOGY

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TRENCH POWER MV; unipolar; 20V; -10.4A; 3W, Type of transistor: P-MOSFET, Technology: TRENCH POWER MV, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: -10.4A, Pulsed drain current: -55A, Power dissipation: 3W, Case: SOP8, Gate-source voltage: ±10V, On-state resistance: 26mΩ, Mounting: SMD, Gate charge: 72.8nC, Kind of package: reel; tape, Kind of channel: enhancement.