ZXM66P02N8TC Diodes Inc

Description: MOSFET P-CH 20V 6.4A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 3.2A, 4.5V, Power Dissipation (Max): 1.56W (Ta), Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 43.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2068 pF @ 15 V.