Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (97158) > Seite 122 nach 1620
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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ICP-N50T104 | Rohm Semiconductor |
Description: FUSE BOARD MNT 2A 50VAC/VDC RAD Packaging: Tape & Box (TB) Package / Case: Radial, Box Size / Dimension: 0.197" L x 0.157" W x 0.250" H (5.00mm x 4.00mm x 6.35mm) Fuse Type: Board Mount (Cartridge Style Excluded) Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Response Time: Fast Blow Current Rating (Amps): 2 A Voltage Rating - AC: 50 V Voltage Rating - DC: 50 V |
Produkt ist nicht verfügbar |
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ICP-N70T104 | Rohm Semiconductor |
Description: FUSE BRD MNT 2.5A 50VAC/VDC RAD Packaging: Tape & Box (TB) Package / Case: Radial, Box Size / Dimension: 0.197" L x 0.157" W x 0.250" H (5.00mm x 4.00mm x 6.35mm) Fuse Type: Board Mount (Cartridge Style Excluded) Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Response Time: Fast Blow Current Rating (Amps): 2.5 A Voltage Rating - AC: 50 V Voltage Rating - DC: 50 V |
Produkt ist nicht verfügbar |
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ICP-S0.5TN | Rohm Semiconductor | Description: FUSE BRD MNT 500MA 50VAC/VDC SMD |
Produkt ist nicht verfügbar |
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ICP-S0.7TN | Rohm Semiconductor | Description: FUSE BRD MNT 700MA 50VAC/VDC SMD |
Produkt ist nicht verfügbar |
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ICP-S1.0TN | Rohm Semiconductor | Description: FUSE BOARD MNT 1A 50VAC/VDC 2SMD |
Produkt ist nicht verfügbar |
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ICP-S1.8TN | Rohm Semiconductor | Description: FUSE BRD MNT 1.8A 50VAC/VDC 2SMD |
Produkt ist nicht verfügbar |
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ICP-S2.3TN | Rohm Semiconductor | Description: FUSE BRD MNT 2.3A 50VAC/VDC 2SMD |
Produkt ist nicht verfügbar |
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IMB1AT110 | Rohm Semiconductor | Description: TRANS PREBIAS DUAL PNP SMT6 |
Produkt ist nicht verfügbar |
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IMB4AT110 | Rohm Semiconductor | Description: TRANS PREBIAS DUAL PNP SMT6 |
Produkt ist nicht verfügbar |
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IMB9AT110 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL PNP SMT6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SMT6 Part Status: Not For New Designs |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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IMD14T108 | Rohm Semiconductor | Description: TRANS NPN/PNP PREBIAS 0.3W SMT6 |
Produkt ist nicht verfügbar |
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IMD16AT108 | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.3W SMT6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA / 300mV @ 100µA, 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 82 @ 50mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 100kOhms, 2.2kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SMT6 Part Status: Active |
Produkt ist nicht verfügbar |
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IMD1AT108 | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.3W SMT6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Supplier Device Package: SMT6 |
Produkt ist nicht verfügbar |
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IMD2AT108 | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.3W SMT6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SMT6 |
Produkt ist nicht verfügbar |
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IMD8AT108 | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.3W SMT6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Resistor - Base (R1): 47kOhms Supplier Device Package: SMT6 |
Produkt ist nicht verfügbar |
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IMH14AT108 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL NPN SMT6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 47kOhms Supplier Device Package: SMT6 |
Produkt ist nicht verfügbar |
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IMH15AT110 | Rohm Semiconductor | Description: TRANS PREBIAS DUAL NPN SMT6 |
Produkt ist nicht verfügbar |
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IMH1AT110 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL NPN SMT6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SMT6 |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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IMH3AT110 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL NPN SMT6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: SMT6 Part Status: Active |
Produkt ist nicht verfügbar |
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IMH4AT110 | Rohm Semiconductor | Description: TRANS PREBIAS DUAL NPN SMT6 |
Produkt ist nicht verfügbar |
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IMH5AT108 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL NPN SMT6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SMT6 |
Produkt ist nicht verfügbar |
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IMH6AT108 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL NPN SMT6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SMT6 |
Produkt ist nicht verfügbar |
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IMH8AT108 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL NPN SMT6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Supplier Device Package: SMT6 |
Produkt ist nicht verfügbar |
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IMH9AT110 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL NPN SMT6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SMT6 Part Status: Active |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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IMP11T110 | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA SMT6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 2 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SMT6 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V |
Produkt ist nicht verfügbar |
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IMT17T110 | Rohm Semiconductor | Description: TRANS 2PNP 50V 0.5A 6SMT |
Produkt ist nicht verfügbar |
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IMT1AT110 | Rohm Semiconductor |
Description: TRANS 2PNP 50V 0.15A 6SMT Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 140MHz Supplier Device Package: SMT6 Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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IMT2AT108 | Rohm Semiconductor |
Description: TRANS 2PNP 50V 0.15A 6SMT Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 140MHz Supplier Device Package: SMT6 |
Produkt ist nicht verfügbar |
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IMT3AT108 | Rohm Semiconductor |
Description: TRANS 2PNP 50V 0.15A 6SMT Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 140MHz Supplier Device Package: SMT6 |
Produkt ist nicht verfügbar |
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IMX17T110 | Rohm Semiconductor | Description: TRANS 2NPN 50V 0.5A 6SMT |
Produkt ist nicht verfügbar |
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IMX3T108 | Rohm Semiconductor | Description: TRANS 2NPN 50V 0.15A 6SMT |
Produkt ist nicht verfügbar |
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IMX4T108 | Rohm Semiconductor | Description: TRANS 2NPN 20V 0.05A 6SMT |
Produkt ist nicht verfügbar |
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IMX5T108 | Rohm Semiconductor | Description: TRANS 2NPN 11V 0.05A 6SMT |
Produkt ist nicht verfügbar |
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IMX9T110 | Rohm Semiconductor |
Description: TRANS 2NPN 20V 0.5A 6SMT Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 560 @ 10mA, 3V Frequency - Transition: 350MHz Supplier Device Package: SMT6 Part Status: Not For New Designs |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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MMSTA06T146 | Rohm Semiconductor |
Description: TRANS NPN 80V 0.5A SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SMT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 350 mW |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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MMSTA56T146 | Rohm Semiconductor | Description: TRANS PNP 80V 0.5A SMT3 |
Produkt ist nicht verfügbar |
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MPSA06T93 | Rohm Semiconductor |
Description: TRANS NPN 80V 0.5A TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
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MTZJT-7710B | Rohm Semiconductor | Description: DIODE ZENER 10V 500MW MSD |
Produkt ist nicht verfügbar |
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MTZJT-7710C | Rohm Semiconductor | Description: DIODE ZENER 10V 500MW MSD |
Produkt ist nicht verfügbar |
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MTZJT-7711B | Rohm Semiconductor | Description: DIODE ZENER 11V 500MW MSD |
Produkt ist nicht verfügbar |
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MTZJT-7711C | Rohm Semiconductor | Description: DIODE ZENER 11V 500MW MSD |
Produkt ist nicht verfügbar |
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MTZJT-7712B | Rohm Semiconductor | Description: DIODE ZENER 12V 500MW MSD |
Produkt ist nicht verfügbar |
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MTZJT-7712C | Rohm Semiconductor | Description: DIODE ZENER 12V 500MW MSD |
Produkt ist nicht verfügbar |
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MTZJT-7713B | Rohm Semiconductor | Description: DIODE ZENER 13V 500MW MSD |
Produkt ist nicht verfügbar |
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MTZJT-7713C | Rohm Semiconductor | Description: DIODE ZENER 13V 500MW MSD |
Produkt ist nicht verfügbar |
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MTZJT-7715B | Rohm Semiconductor |
Description: DIODE ZENER 15V 500MW MSD Tolerance: ±3% Packaging: Tape & Box (TB) Package / Case: DO-204AG, DO-34, Axial Mounting Type: Through Hole Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: MSD Part Status: Obsolete Power - Max: 500 mW Current - Reverse Leakage @ Vr: 200 nA @ 11 V |
Produkt ist nicht verfügbar |
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MTZJT-7715C | Rohm Semiconductor |
Description: DIODE ZENER 15V 500MW MSD Tolerance: ±3% Packaging: Tape & Box (TB) Package / Case: DO-204AG, DO-34, Axial Mounting Type: Through Hole Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: MSD Part Status: Obsolete Power - Max: 500 mW Current - Reverse Leakage @ Vr: 200 nA @ 11 V |
Produkt ist nicht verfügbar |
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MTZJT-7716B | Rohm Semiconductor | Description: DIODE ZENER 16V 500MW MSD |
Produkt ist nicht verfügbar |
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MTZJT-7716C | Rohm Semiconductor | Description: DIODE ZENER 16V 500MW MSD |
Produkt ist nicht verfügbar |
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MTZJT-7718B | Rohm Semiconductor | Description: DIODE ZENER 18V 500MW MSD |
Produkt ist nicht verfügbar |
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MTZJT-7718C | Rohm Semiconductor | Description: DIODE ZENER 18V 500MW MSD |
Produkt ist nicht verfügbar |
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MTZJT-7720B | Rohm Semiconductor | Description: DIODE ZENER 20V 500MW MSD |
Produkt ist nicht verfügbar |
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MTZJT-7720C | Rohm Semiconductor | Description: DIODE ZENER 20V 500MW MSD |
Produkt ist nicht verfügbar |
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MTZJT-7722B | Rohm Semiconductor | Description: DIODE ZENER 22V 500MW MSD |
Produkt ist nicht verfügbar |
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MTZJT-7722C | Rohm Semiconductor | Description: DIODE ZENER 22V 500MW MSD |
Produkt ist nicht verfügbar |
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MTZJT-7724B | Rohm Semiconductor | Description: DIODE ZENER 24V 500MW MSD |
Produkt ist nicht verfügbar |
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MTZJT-7724C | Rohm Semiconductor | Description: DIODE ZENER 24V 500MW MSD |
Produkt ist nicht verfügbar |
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MTZJT-7727B | Rohm Semiconductor | Description: DIODE ZENER 27V 500MW MSD |
Produkt ist nicht verfügbar |
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MTZJT-7727C | Rohm Semiconductor | Description: DIODE ZENER 27V 500MW MSD |
Produkt ist nicht verfügbar |
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MTZJT-7730B | Rohm Semiconductor | Description: DIODE ZENER 30V 500MW MSD |
Produkt ist nicht verfügbar |
ICP-N50T104 |
Hersteller: Rohm Semiconductor
Description: FUSE BOARD MNT 2A 50VAC/VDC RAD
Packaging: Tape & Box (TB)
Package / Case: Radial, Box
Size / Dimension: 0.197" L x 0.157" W x 0.250" H (5.00mm x 4.00mm x 6.35mm)
Fuse Type: Board Mount (Cartridge Style Excluded)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Response Time: Fast Blow
Current Rating (Amps): 2 A
Voltage Rating - AC: 50 V
Voltage Rating - DC: 50 V
Description: FUSE BOARD MNT 2A 50VAC/VDC RAD
Packaging: Tape & Box (TB)
Package / Case: Radial, Box
Size / Dimension: 0.197" L x 0.157" W x 0.250" H (5.00mm x 4.00mm x 6.35mm)
Fuse Type: Board Mount (Cartridge Style Excluded)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Response Time: Fast Blow
Current Rating (Amps): 2 A
Voltage Rating - AC: 50 V
Voltage Rating - DC: 50 V
Produkt ist nicht verfügbar
ICP-N70T104 |
Hersteller: Rohm Semiconductor
Description: FUSE BRD MNT 2.5A 50VAC/VDC RAD
Packaging: Tape & Box (TB)
Package / Case: Radial, Box
Size / Dimension: 0.197" L x 0.157" W x 0.250" H (5.00mm x 4.00mm x 6.35mm)
Fuse Type: Board Mount (Cartridge Style Excluded)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Response Time: Fast Blow
Current Rating (Amps): 2.5 A
Voltage Rating - AC: 50 V
Voltage Rating - DC: 50 V
Description: FUSE BRD MNT 2.5A 50VAC/VDC RAD
Packaging: Tape & Box (TB)
Package / Case: Radial, Box
Size / Dimension: 0.197" L x 0.157" W x 0.250" H (5.00mm x 4.00mm x 6.35mm)
Fuse Type: Board Mount (Cartridge Style Excluded)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Response Time: Fast Blow
Current Rating (Amps): 2.5 A
Voltage Rating - AC: 50 V
Voltage Rating - DC: 50 V
Produkt ist nicht verfügbar
ICP-S0.5TN |
Hersteller: Rohm Semiconductor
Description: FUSE BRD MNT 500MA 50VAC/VDC SMD
Description: FUSE BRD MNT 500MA 50VAC/VDC SMD
Produkt ist nicht verfügbar
ICP-S0.7TN |
Hersteller: Rohm Semiconductor
Description: FUSE BRD MNT 700MA 50VAC/VDC SMD
Description: FUSE BRD MNT 700MA 50VAC/VDC SMD
Produkt ist nicht verfügbar
ICP-S1.0TN |
Hersteller: Rohm Semiconductor
Description: FUSE BOARD MNT 1A 50VAC/VDC 2SMD
Description: FUSE BOARD MNT 1A 50VAC/VDC 2SMD
Produkt ist nicht verfügbar
ICP-S1.8TN |
Hersteller: Rohm Semiconductor
Description: FUSE BRD MNT 1.8A 50VAC/VDC 2SMD
Description: FUSE BRD MNT 1.8A 50VAC/VDC 2SMD
Produkt ist nicht verfügbar
ICP-S2.3TN |
Hersteller: Rohm Semiconductor
Description: FUSE BRD MNT 2.3A 50VAC/VDC 2SMD
Description: FUSE BRD MNT 2.3A 50VAC/VDC 2SMD
Produkt ist nicht verfügbar
IMB1AT110 |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT6
Description: TRANS PREBIAS DUAL PNP SMT6
Produkt ist nicht verfügbar
IMB4AT110 |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT6
Description: TRANS PREBIAS DUAL PNP SMT6
Produkt ist nicht verfügbar
IMB9AT110 |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMT6
Part Status: Not For New Designs
Description: TRANS PREBIAS DUAL PNP SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMT6
Part Status: Not For New Designs
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.31 EUR |
6000+ | 0.29 EUR |
IMD14T108 |
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.3W SMT6
Description: TRANS NPN/PNP PREBIAS 0.3W SMT6
Produkt ist nicht verfügbar
IMD16AT108 |
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.3W SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA / 300mV @ 100µA, 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 82 @ 50mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 100kOhms, 2.2kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SMT6
Part Status: Active
Description: TRANS NPN/PNP PREBIAS 0.3W SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA / 300mV @ 100µA, 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 82 @ 50mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 100kOhms, 2.2kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SMT6
Part Status: Active
Produkt ist nicht verfügbar
IMD1AT108 |
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.3W SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Supplier Device Package: SMT6
Description: TRANS NPN/PNP PREBIAS 0.3W SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Supplier Device Package: SMT6
Produkt ist nicht verfügbar
IMD2AT108 |
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.3W SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SMT6
Description: TRANS NPN/PNP PREBIAS 0.3W SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SMT6
Produkt ist nicht verfügbar
IMD8AT108 |
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.3W SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Resistor - Base (R1): 47kOhms
Supplier Device Package: SMT6
Description: TRANS NPN/PNP PREBIAS 0.3W SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Resistor - Base (R1): 47kOhms
Supplier Device Package: SMT6
Produkt ist nicht verfügbar
IMH14AT108 |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Supplier Device Package: SMT6
Description: TRANS PREBIAS DUAL NPN SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Supplier Device Package: SMT6
Produkt ist nicht verfügbar
IMH15AT110 |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6
Description: TRANS PREBIAS DUAL NPN SMT6
Produkt ist nicht verfügbar
IMH1AT110 |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SMT6
Description: TRANS PREBIAS DUAL NPN SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SMT6
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.27 EUR |
6000+ | 0.26 EUR |
IMH3AT110 |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SMT6
Part Status: Active
Description: TRANS PREBIAS DUAL NPN SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SMT6
Part Status: Active
Produkt ist nicht verfügbar
IMH4AT110 |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6
Description: TRANS PREBIAS DUAL NPN SMT6
Produkt ist nicht verfügbar
IMH5AT108 |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SMT6
Description: TRANS PREBIAS DUAL NPN SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SMT6
Produkt ist nicht verfügbar
IMH6AT108 |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMT6
Description: TRANS PREBIAS DUAL NPN SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMT6
Produkt ist nicht verfügbar
IMH8AT108 |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: SMT6
Description: TRANS PREBIAS DUAL NPN SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: SMT6
Produkt ist nicht verfügbar
IMH9AT110 |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMT6
Part Status: Active
Description: TRANS PREBIAS DUAL NPN SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMT6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.24 EUR |
6000+ | 0.23 EUR |
IMP11T110 |
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SMT6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Description: DIODE ARRAY GP 80V 100MA SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SMT6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Produkt ist nicht verfügbar
IMT17T110 |
Hersteller: Rohm Semiconductor
Description: TRANS 2PNP 50V 0.5A 6SMT
Description: TRANS 2PNP 50V 0.5A 6SMT
Produkt ist nicht verfügbar
IMT1AT110 |
Hersteller: Rohm Semiconductor
Description: TRANS 2PNP 50V 0.15A 6SMT
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT6
Part Status: Active
Description: TRANS 2PNP 50V 0.15A 6SMT
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.24 EUR |
IMT2AT108 |
Hersteller: Rohm Semiconductor
Description: TRANS 2PNP 50V 0.15A 6SMT
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT6
Description: TRANS 2PNP 50V 0.15A 6SMT
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT6
Produkt ist nicht verfügbar
IMT3AT108 |
Hersteller: Rohm Semiconductor
Description: TRANS 2PNP 50V 0.15A 6SMT
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT6
Description: TRANS 2PNP 50V 0.15A 6SMT
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT6
Produkt ist nicht verfügbar
IMX17T110 |
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN 50V 0.5A 6SMT
Description: TRANS 2NPN 50V 0.5A 6SMT
Produkt ist nicht verfügbar
IMX3T108 |
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN 50V 0.15A 6SMT
Description: TRANS 2NPN 50V 0.15A 6SMT
Produkt ist nicht verfügbar
IMX4T108 |
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN 20V 0.05A 6SMT
Description: TRANS 2NPN 20V 0.05A 6SMT
Produkt ist nicht verfügbar
IMX5T108 |
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN 11V 0.05A 6SMT
Description: TRANS 2NPN 11V 0.05A 6SMT
Produkt ist nicht verfügbar
IMX9T110 |
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN 20V 0.5A 6SMT
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 560 @ 10mA, 3V
Frequency - Transition: 350MHz
Supplier Device Package: SMT6
Part Status: Not For New Designs
Description: TRANS 2NPN 20V 0.5A 6SMT
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 560 @ 10mA, 3V
Frequency - Transition: 350MHz
Supplier Device Package: SMT6
Part Status: Not For New Designs
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.25 EUR |
6000+ | 0.24 EUR |
MMSTA06T146 |
Hersteller: Rohm Semiconductor
Description: TRANS NPN 80V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
Description: TRANS NPN 80V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.33 EUR |
MMSTA56T146 |
Hersteller: Rohm Semiconductor
Description: TRANS PNP 80V 0.5A SMT3
Description: TRANS PNP 80V 0.5A SMT3
Produkt ist nicht verfügbar
MPSA06T93 |
Hersteller: Rohm Semiconductor
Description: TRANS NPN 80V 0.5A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
Description: TRANS NPN 80V 0.5A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
MTZJT-7710B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 10V 500MW MSD
Description: DIODE ZENER 10V 500MW MSD
Produkt ist nicht verfügbar
MTZJT-7710C |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 10V 500MW MSD
Description: DIODE ZENER 10V 500MW MSD
Produkt ist nicht verfügbar
MTZJT-7711B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 11V 500MW MSD
Description: DIODE ZENER 11V 500MW MSD
Produkt ist nicht verfügbar
MTZJT-7711C |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 11V 500MW MSD
Description: DIODE ZENER 11V 500MW MSD
Produkt ist nicht verfügbar
MTZJT-7712B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 12V 500MW MSD
Description: DIODE ZENER 12V 500MW MSD
Produkt ist nicht verfügbar
MTZJT-7712C |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 12V 500MW MSD
Description: DIODE ZENER 12V 500MW MSD
Produkt ist nicht verfügbar
MTZJT-7713B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 13V 500MW MSD
Description: DIODE ZENER 13V 500MW MSD
Produkt ist nicht verfügbar
MTZJT-7713C |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 13V 500MW MSD
Description: DIODE ZENER 13V 500MW MSD
Produkt ist nicht verfügbar
MTZJT-7715B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 15V 500MW MSD
Tolerance: ±3%
Packaging: Tape & Box (TB)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: MSD
Part Status: Obsolete
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 11 V
Description: DIODE ZENER 15V 500MW MSD
Tolerance: ±3%
Packaging: Tape & Box (TB)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: MSD
Part Status: Obsolete
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 11 V
Produkt ist nicht verfügbar
MTZJT-7715C |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 15V 500MW MSD
Tolerance: ±3%
Packaging: Tape & Box (TB)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: MSD
Part Status: Obsolete
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 11 V
Description: DIODE ZENER 15V 500MW MSD
Tolerance: ±3%
Packaging: Tape & Box (TB)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: MSD
Part Status: Obsolete
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 11 V
Produkt ist nicht verfügbar
MTZJT-7716B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 16V 500MW MSD
Description: DIODE ZENER 16V 500MW MSD
Produkt ist nicht verfügbar
MTZJT-7716C |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 16V 500MW MSD
Description: DIODE ZENER 16V 500MW MSD
Produkt ist nicht verfügbar
MTZJT-7718B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 18V 500MW MSD
Description: DIODE ZENER 18V 500MW MSD
Produkt ist nicht verfügbar
MTZJT-7718C |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 18V 500MW MSD
Description: DIODE ZENER 18V 500MW MSD
Produkt ist nicht verfügbar
MTZJT-7720B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 20V 500MW MSD
Description: DIODE ZENER 20V 500MW MSD
Produkt ist nicht verfügbar
MTZJT-7720C |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 20V 500MW MSD
Description: DIODE ZENER 20V 500MW MSD
Produkt ist nicht verfügbar
MTZJT-7722B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 22V 500MW MSD
Description: DIODE ZENER 22V 500MW MSD
Produkt ist nicht verfügbar
MTZJT-7722C |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 22V 500MW MSD
Description: DIODE ZENER 22V 500MW MSD
Produkt ist nicht verfügbar
MTZJT-7724B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 24V 500MW MSD
Description: DIODE ZENER 24V 500MW MSD
Produkt ist nicht verfügbar
MTZJT-7724C |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 24V 500MW MSD
Description: DIODE ZENER 24V 500MW MSD
Produkt ist nicht verfügbar
MTZJT-7727B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 27V 500MW MSD
Description: DIODE ZENER 27V 500MW MSD
Produkt ist nicht verfügbar
MTZJT-7727C |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 27V 500MW MSD
Description: DIODE ZENER 27V 500MW MSD
Produkt ist nicht verfügbar
MTZJT-7730B |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 30V 500MW MSD
Description: DIODE ZENER 30V 500MW MSD
Produkt ist nicht verfügbar