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LM393WPT LM393WPT Rohm Semiconductor LM393,LM2903,LM339,LM2901.pdf Description: IC COMPARATOR DUAL GP 8TSSOP
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R5005CNJTL R5005CNJTL Rohm Semiconductor R5005CNJ Description: MOSFET N-CH 10V DRIVE LPTS
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R5007ANJTL R5007ANJTL Rohm Semiconductor R5007ANJ Description: MOSFET N-CH 500V 7A LPTS
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R5009ANJTL R5009ANJTL Rohm Semiconductor R5009ANJ Description: MOSFET N-CH 500V 9A LPTS
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R5011ANJTL R5011ANJTL Rohm Semiconductor datasheet?p=R5011ANJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 500V 11A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
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R5013ANJTL R5013ANJTL Rohm Semiconductor r5013anjtl-e.pdf Description: MOSFET N-CH 10V DRIVE LPTS
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R5016ANJTL R5016ANJTL Rohm Semiconductor r5016anjtl-e.pdf Description: MOSFET N-CH 10V DRIVE LPTS
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R5021ANJTL R5021ANJTL Rohm Semiconductor Description: MOSFET N-CH 500V 21A LPTS
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R5205CNDTL R5205CNDTL Rohm Semiconductor R5205CND Description: MOSFET N-CH 525V 5A CPT3
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R5207ANDTL R5207ANDTL Rohm Semiconductor datasheet?p=R5207AND&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 525V 7A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
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R6012ANJTL R6012ANJTL Rohm Semiconductor r6012anj.pdf Description: MOSFET N-CH 10V DRIVE LPTS
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R6015ANJTL R6015ANJTL Rohm Semiconductor datasheet?p=R6015ANJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 15A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
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R6018ANJTL R6018ANJTL Rohm Semiconductor R6018ANJ Description: MOSFET N-CH 600V 18A LPTS
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R6020ANJTL R6020ANJTL Rohm Semiconductor datasheet?p=R6020ANJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 20A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
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RBQ10B65ATL RBQ10B65ATL Rohm Semiconductor rbq10b65a.pdf Description: DIODE ARRAY SCHOTTKY 65V 5A CPD
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RCD050N20TL RCD050N20TL Rohm Semiconductor RCD050N20.pdf Description: MOSFET N-CH 200V 5A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 618mOhm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
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RCD060N25TL RCD060N25TL Rohm Semiconductor rcd060n25-e.pdf Description: MOSFET N-CH 250V 6A CPT3
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RCD075N20TL RCD075N20TL Rohm Semiconductor datasheet?p=RCD075N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 7.5A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 325mOhm @ 3.75A, 10V
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
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RCD100N20TL RCD100N20TL Rohm Semiconductor datasheet?p=RCD100N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 10A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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RFN5B6STL RFN5B6STL Rohm Semiconductor RFN5B6S.pdf Description: DIODE GEN PURP 600V 5A CPD
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RLZTE-112.0B RLZTE-112.0B Rohm Semiconductor Description: DIODE ZENER 2V 500MW LL34
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RLZTE-113.0B Rohm Semiconductor Description: DIODE ZENER 500MW 3V LL-34
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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RLZTE-113.3B Rohm Semiconductor Description: DIODE ZENER 500MW 3.3V LL-34
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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RPM5538-H14E2 Rohm Semiconductor rpm5500.pdf Description: SENSOR REMOTE REC 37.9KHZ 12M
Packaging: Tape & Reel (TR)
Sensing Distance: 12m
Orientation: Side View
Operating Temperature: -10°C ~ 75°C
B.P.F. Center Frequency: 37.9kHz
Current - Supply: 1.5 mA
Voltage - Supply: 4.5 V ~ 5.5 V
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RPM841-H11E2 Rohm Semiconductor Description: IC IRDA IR COMMUNICATION MODULE
Packaging: Tape & Reel (TR)
Orientation: Side View
Operating Temperature: -30°C ~ 85°C
Size: 6.80mm x 2.44mm x 1.70mm
Data Rate: 115.2kbs (SIR)
Standards: IrDA 1.2
Link Range, Low Power: 20cm, 60cm
Voltage - Supply: 2.4 V ~ 3.6 V
Idle Current, Typ @ 25°C: 90 µA
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RPM872-E4 Rohm Semiconductor RPM872.pdf Description: IC IRDA IR COMMUNICATION MODULE
Packaging: Tape & Reel (TR)
Orientation: Top View
Operating Temperature: -20°C ~ 85°C
Size: 7.60mm x 2.72mm x 2.00mm
Data Rate: 115.2kbs (SIR)
Standards: IrDA 1.2
Link Range, Low Power: 20cm, 60cm
Voltage - Supply: 2 V ~ 3.6 V
Idle Current, Typ @ 25°C: 75 µA
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RPM873-E4 Rohm Semiconductor RPM873.pdf Description: IC IRDA IR COMMUNICATION MODULE
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RPM882-E4 Rohm Semiconductor Description: IC IRDA IR COMMUNICATION MODULE
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RPM882-H7E2 Rohm Semiconductor Description: IC IRDA IR COMMUNICATION MODULE
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RPM922-H11E2A Rohm Semiconductor RPM922-H11.pdf Description: IC IRDA IR COMMUNICATION MODULE
Packaging: Tape & Reel (TR)
Orientation: Side View
Operating Temperature: -30°C ~ 85°C
Size: 6.80mm x 2.29mm x 1.70mm
Data Rate: 115.2kbs (SIR)
Standards: IrDA 1.3
Link Range, Low Power: 20cm, 60cm
Voltage - Supply: 2.4 V ~ 3.6 V
Idle Current, Typ @ 25°C: 900 µA
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RPM960-H14E3 Rohm Semiconductor RPM960-H14.pdf Description: IC IRDA IR COMMUNICATION MODULE
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RPMS1371-H19E4AV Rohm Semiconductor rpms1371-h19.pdf Description: IC RCVR MODULE REMOTE CTRL SMD
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RPMS1401-H19E4AV Rohm Semiconductor rpms1401-h19.pdf Description: IC RCVR MODULE REMOTE CTRL SMD
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RPMS2001-H19E2A Rohm Semiconductor RPMS2001-H19.pdf Description: SENSOR REMOTE REC 36.7KHZ 8M
Packaging: Tape & Reel (TR)
Sensing Distance: 8m
Operating Temperature: -30°C ~ 85°C (TA)
B.P.F. Center Frequency: 36.7kHz
Current - Supply: 950 µA
Voltage - Supply: 4.5 V ~ 5.5 V
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RPMS2371-H19E4AV Rohm Semiconductor rpms2371-h19.pdf Description: IC RCVR MODULE REMOTE CTRL SMD
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RS1G180MNTB RS1G180MNTB Rohm Semiconductor rs1g180mn-e.pdf Description: MOSFET N-CH 40V 18A/80A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 20 V
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RSD045P05TL Rohm Semiconductor datasheet?p=RSD045P05&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 45V CPT3
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
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RSD080N06TL RSD080N06TL Rohm Semiconductor rsd080n06.pdf Description: MOSFET N-CH 60V 8A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
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RSD080P05TL RSD080P05TL Rohm Semiconductor rsd080p05.pdf Description: MOSFET P-CH 45V 8A CPT3
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RSD100N10TL RSD100N10TL Rohm Semiconductor rsd100n10.pdf Description: MOSFET N-CH 100V 10A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 133mOhm @ 5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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RSD131P10TL RSD131P10TL Rohm Semiconductor Description: MOSFET P-CH 100V 13A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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RSD140P06TL RSD140P06TL Rohm Semiconductor rsd140p06.pdf Description: MOSFET P-CH 60V 14A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 84mOhm @ 14A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
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RSD150N06TL RSD150N06TL Rohm Semiconductor rsd150n06.pdf Description: MOSFET N-CH 60V 15A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
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RSD221N06TL RSD221N06TL Rohm Semiconductor rsd221n06.pdf Description: MOSFET N-CH 60V 22A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 22A, 10V
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V
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RSJ300N10TL RSJ300N10TL Rohm Semiconductor rsj300n10.pdf Description: MOSFET N-CH 100V 30A LPTS
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RSY500N04FRATL Rohm Semiconductor Description: MOSFET N-CH 40V 50A TCPT3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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RXH125N03TB1 RXH125N03TB1 Rohm Semiconductor datasheet?p=RXH125N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 12.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Produkt ist nicht verfügbar
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SH8K12TB1 SH8K12TB1 Rohm Semiconductor sh8k12.pdf Description: MOSFET 2N-CH 30V 5A 8SOP
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SH8K15TB1 SH8K15TB1 Rohm Semiconductor sh8k15.pdf Description: MOSFET 2N-CH 30V 9A 8SOP
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SH8M11TB1 SH8M11TB1 Rohm Semiconductor sh8m11.pdf Description: MOSFET N/P-CH 30V 3.5A 8SOP
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SH8M12TB1 SH8M12TB1 Rohm Semiconductor sh8m12.pdf Description: MOSFET N/P-CH 30V 5A/4.5A SOP8
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SH8M14TB1 SH8M14TB1 Rohm Semiconductor sh8m14.pdf Description: MOSFET N/P-CH 30V 9A/7A SOP
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SMLK19WBEDW1 SMLK19WBEDW1 Rohm Semiconductor SML-K19%20Series.pdf Description: LED WHITE DIFFUSED 4520 SMD
Produkt ist nicht verfügbar
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SP8M70TB1 SP8M70TB1 Rohm Semiconductor SP8M70 Description: MOSFET N/P-CH 250V 3A/2.5A 8SOIC
Produkt ist nicht verfügbar
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ZDS020N60TB ZDS020N60TB Rohm Semiconductor ZDS020N60.pdf Description: MOSFET N-CH 600V 630MA 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V
Produkt ist nicht verfügbar
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1SR159-200TE25 1SR159-200TE25 Rohm Semiconductor 1SR159-200.pdf Description: DIODE GEN PURP 200V 1A PMDS
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1SS400CST2RA 1SS400CST2RA Rohm Semiconductor datasheet?p=1SS400CS&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 80V 100MAVMN2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
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1SS400SMT2R 1SS400SMT2R Rohm Semiconductor datasheet?p=1SS400SM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 80V 100MA EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
auf Bestellung 816000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.04 EUR
Mindestbestellmenge: 8000
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2SA1576UBTLR 2SA1576UBTLR Rohm Semiconductor 2SA1576UB.pdf Description: TRANS PNP 50V 0.15A UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.07 EUR
6000+0.06 EUR
9000+0.06 EUR
15000+0.05 EUR
21000+0.05 EUR
30000+0.05 EUR
75000+0.04 EUR
Mindestbestellmenge: 3000
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2SAR522UBTL 2SAR522UBTL Rohm Semiconductor 2sar522mt2l-e.pdf Description: TRANS PNP 20V 0.2A UMT3F
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LM393WPT LM393,LM2903,LM339,LM2901.pdf
LM393WPT
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR DUAL GP 8TSSOP
Produkt ist nicht verfügbar
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R5005CNJTL R5005CNJ
R5005CNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 10V DRIVE LPTS
Produkt ist nicht verfügbar
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R5007ANJTL R5007ANJ
R5007ANJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 7A LPTS
Produkt ist nicht verfügbar
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R5009ANJTL R5009ANJ
R5009ANJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 9A LPTS
Produkt ist nicht verfügbar
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R5011ANJTL datasheet?p=R5011ANJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R5011ANJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 11A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Produkt ist nicht verfügbar
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R5013ANJTL r5013anjtl-e.pdf
R5013ANJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 10V DRIVE LPTS
Produkt ist nicht verfügbar
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R5016ANJTL r5016anjtl-e.pdf
R5016ANJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 10V DRIVE LPTS
Produkt ist nicht verfügbar
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R5021ANJTL
R5021ANJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 21A LPTS
Produkt ist nicht verfügbar
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R5205CNDTL R5205CND
R5205CNDTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 525V 5A CPT3
Produkt ist nicht verfügbar
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R5207ANDTL datasheet?p=R5207AND&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R5207ANDTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 525V 7A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Produkt ist nicht verfügbar
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R6012ANJTL r6012anj.pdf
R6012ANJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 10V DRIVE LPTS
Produkt ist nicht verfügbar
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R6015ANJTL datasheet?p=R6015ANJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6015ANJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
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R6018ANJTL R6018ANJ
R6018ANJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 18A LPTS
Produkt ist nicht verfügbar
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R6020ANJTL datasheet?p=R6020ANJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6020ANJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Produkt ist nicht verfügbar
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RBQ10B65ATL rbq10b65a.pdf
RBQ10B65ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTTKY 65V 5A CPD
auf Bestellung 2500 Stücke:
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RCD050N20TL RCD050N20.pdf
RCD050N20TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 5A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 618mOhm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Produkt ist nicht verfügbar
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RCD060N25TL rcd060n25-e.pdf
RCD060N25TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 6A CPT3
Produkt ist nicht verfügbar
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RCD075N20TL datasheet?p=RCD075N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCD075N20TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 7.5A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 325mOhm @ 3.75A, 10V
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Produkt ist nicht verfügbar
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RCD100N20TL datasheet?p=RCD100N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCD100N20TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 10A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar
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RFN5B6STL RFN5B6S.pdf
RFN5B6STL
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 5A CPD
Produkt ist nicht verfügbar
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RLZTE-112.0B
RLZTE-112.0B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 2V 500MW LL34
Produkt ist nicht verfügbar
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RLZTE-113.0B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 500MW 3V LL-34
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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RLZTE-113.3B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 500MW 3.3V LL-34
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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RPM5538-H14E2 rpm5500.pdf
Hersteller: Rohm Semiconductor
Description: SENSOR REMOTE REC 37.9KHZ 12M
Packaging: Tape & Reel (TR)
Sensing Distance: 12m
Orientation: Side View
Operating Temperature: -10°C ~ 75°C
B.P.F. Center Frequency: 37.9kHz
Current - Supply: 1.5 mA
Voltage - Supply: 4.5 V ~ 5.5 V
Produkt ist nicht verfügbar
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RPM841-H11E2
Hersteller: Rohm Semiconductor
Description: IC IRDA IR COMMUNICATION MODULE
Packaging: Tape & Reel (TR)
Orientation: Side View
Operating Temperature: -30°C ~ 85°C
Size: 6.80mm x 2.44mm x 1.70mm
Data Rate: 115.2kbs (SIR)
Standards: IrDA 1.2
Link Range, Low Power: 20cm, 60cm
Voltage - Supply: 2.4 V ~ 3.6 V
Idle Current, Typ @ 25°C: 90 µA
Produkt ist nicht verfügbar
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RPM872-E4 RPM872.pdf
Hersteller: Rohm Semiconductor
Description: IC IRDA IR COMMUNICATION MODULE
Packaging: Tape & Reel (TR)
Orientation: Top View
Operating Temperature: -20°C ~ 85°C
Size: 7.60mm x 2.72mm x 2.00mm
Data Rate: 115.2kbs (SIR)
Standards: IrDA 1.2
Link Range, Low Power: 20cm, 60cm
Voltage - Supply: 2 V ~ 3.6 V
Idle Current, Typ @ 25°C: 75 µA
Produkt ist nicht verfügbar
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RPM873-E4 RPM873.pdf
Hersteller: Rohm Semiconductor
Description: IC IRDA IR COMMUNICATION MODULE
Produkt ist nicht verfügbar
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RPM882-E4
Hersteller: Rohm Semiconductor
Description: IC IRDA IR COMMUNICATION MODULE
Produkt ist nicht verfügbar
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RPM882-H7E2
Hersteller: Rohm Semiconductor
Description: IC IRDA IR COMMUNICATION MODULE
Produkt ist nicht verfügbar
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RPM922-H11E2A RPM922-H11.pdf
Hersteller: Rohm Semiconductor
Description: IC IRDA IR COMMUNICATION MODULE
Packaging: Tape & Reel (TR)
Orientation: Side View
Operating Temperature: -30°C ~ 85°C
Size: 6.80mm x 2.29mm x 1.70mm
Data Rate: 115.2kbs (SIR)
Standards: IrDA 1.3
Link Range, Low Power: 20cm, 60cm
Voltage - Supply: 2.4 V ~ 3.6 V
Idle Current, Typ @ 25°C: 900 µA
Produkt ist nicht verfügbar
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RPM960-H14E3 RPM960-H14.pdf
Hersteller: Rohm Semiconductor
Description: IC IRDA IR COMMUNICATION MODULE
Produkt ist nicht verfügbar
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RPMS1371-H19E4AV rpms1371-h19.pdf
Hersteller: Rohm Semiconductor
Description: IC RCVR MODULE REMOTE CTRL SMD
Produkt ist nicht verfügbar
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RPMS1401-H19E4AV rpms1401-h19.pdf
Hersteller: Rohm Semiconductor
Description: IC RCVR MODULE REMOTE CTRL SMD
Produkt ist nicht verfügbar
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RPMS2001-H19E2A RPMS2001-H19.pdf
Hersteller: Rohm Semiconductor
Description: SENSOR REMOTE REC 36.7KHZ 8M
Packaging: Tape & Reel (TR)
Sensing Distance: 8m
Operating Temperature: -30°C ~ 85°C (TA)
B.P.F. Center Frequency: 36.7kHz
Current - Supply: 950 µA
Voltage - Supply: 4.5 V ~ 5.5 V
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RPMS2371-H19E4AV rpms2371-h19.pdf
Hersteller: Rohm Semiconductor
Description: IC RCVR MODULE REMOTE CTRL SMD
Produkt ist nicht verfügbar
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RS1G180MNTB rs1g180mn-e.pdf
RS1G180MNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 40V 18A/80A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 20 V
Produkt ist nicht verfügbar
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RSD045P05TL datasheet?p=RSD045P05&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 45V CPT3
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Produkt ist nicht verfügbar
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RSD080N06TL rsd080n06.pdf
RSD080N06TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 8A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
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RSD080P05TL rsd080p05.pdf
RSD080P05TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 45V 8A CPT3
Produkt ist nicht verfügbar
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RSD100N10TL rsd100n10.pdf
RSD100N10TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 10A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 133mOhm @ 5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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RSD131P10TL
RSD131P10TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 100V 13A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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RSD140P06TL rsd140p06.pdf
RSD140P06TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 60V 14A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 84mOhm @ 14A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
Produkt ist nicht verfügbar
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RSD150N06TL rsd150n06.pdf
RSD150N06TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 15A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
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RSD221N06TL rsd221n06.pdf
RSD221N06TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 22A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 22A, 10V
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V
Produkt ist nicht verfügbar
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RSJ300N10TL rsj300n10.pdf
RSJ300N10TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 30A LPTS
Produkt ist nicht verfügbar
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RSY500N04FRATL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 40V 50A TCPT3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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RXH125N03TB1 datasheet?p=RXH125N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RXH125N03TB1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 12.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Produkt ist nicht verfügbar
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SH8K12TB1 sh8k12.pdf
SH8K12TB1
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5A 8SOP
Produkt ist nicht verfügbar
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SH8K15TB1 sh8k15.pdf
SH8K15TB1
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A 8SOP
Produkt ist nicht verfügbar
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SH8M11TB1 sh8m11.pdf
SH8M11TB1
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 3.5A 8SOP
Produkt ist nicht verfügbar
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SH8M12TB1 sh8m12.pdf
SH8M12TB1
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A/4.5A SOP8
Produkt ist nicht verfügbar
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SH8M14TB1 sh8m14.pdf
SH8M14TB1
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 9A/7A SOP
Produkt ist nicht verfügbar
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SMLK19WBEDW1 SML-K19%20Series.pdf
SMLK19WBEDW1
Hersteller: Rohm Semiconductor
Description: LED WHITE DIFFUSED 4520 SMD
Produkt ist nicht verfügbar
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SP8M70TB1 SP8M70
SP8M70TB1
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 250V 3A/2.5A 8SOIC
Produkt ist nicht verfügbar
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ZDS020N60TB ZDS020N60.pdf
ZDS020N60TB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 630MA 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V
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1SR159-200TE25 1SR159-200.pdf
1SR159-200TE25
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 200V 1A PMDS
Produkt ist nicht verfügbar
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1SS400CST2RA datasheet?p=1SS400CS&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
1SS400CST2RA
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 80V 100MAVMN2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
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1SS400SMT2R datasheet?p=1SS400SM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
1SS400SMT2R
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 80V 100MA EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
auf Bestellung 816000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.04 EUR
Mindestbestellmenge: 8000
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2SA1576UBTLR 2SA1576UB.pdf
2SA1576UBTLR
Hersteller: Rohm Semiconductor
Description: TRANS PNP 50V 0.15A UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.07 EUR
6000+0.06 EUR
9000+0.06 EUR
15000+0.05 EUR
21000+0.05 EUR
30000+0.05 EUR
75000+0.04 EUR
Mindestbestellmenge: 3000
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2SAR522UBTL 2sar522mt2l-e.pdf
2SAR522UBTL
Hersteller: Rohm Semiconductor
Description: TRANS PNP 20V 0.2A UMT3F
Produkt ist nicht verfügbar
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