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RP1L055SNTR RP1L055SNTR Rohm Semiconductor RP1L055SN.pdf Description: MOSFET N-CH 60V 5.5A MPT6
Produkt ist nicht verfügbar
RP1L080SNTR RP1L080SNTR Rohm Semiconductor RP1L080SN.pdf Description: MOSFET N-CH 60V 8A MPT6
Produkt ist nicht verfügbar
RQ3E100MNTB1 RQ3E100MNTB1 Rohm Semiconductor RQ3E100MN Description: MOSFET N-CH 30V 10A HSMT8
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.16 EUR
Mindestbestellmenge: 3000
RQ3E150MNTB1 RQ3E150MNTB1 Rohm Semiconductor RQ3E150MN Description: MOSFET N-CH 30V 15A 8HSMT
Produkt ist nicht verfügbar
RSB33VTE-17 RSB33VTE-17 Rohm Semiconductor datasheet?p=RSB33V&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 25VWM UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 147000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.25 EUR
6000+ 0.24 EUR
15000+ 0.22 EUR
Mindestbestellmenge: 3000
RSB36VTE-17 RSB36VTE-17 Rohm Semiconductor rsb36v.pdf Description: TVS DIODE 27VWM UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 27V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 32.4V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.24 EUR
6000+ 0.23 EUR
9000+ 0.21 EUR
Mindestbestellmenge: 3000
RSB39VTE-17 RSB39VTE-17 Rohm Semiconductor datasheet?p=RSB39V&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 30VWM UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 114000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.22 EUR
6000+ 0.2 EUR
15000+ 0.19 EUR
30000+ 0.18 EUR
Mindestbestellmenge: 3000
RSB5.6SMT2N RSB5.6SMT2N Rohm Semiconductor datasheet?p=RSB5.6SM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 2.5VWM EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 2.5V
Supplier Device Package: EMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4.76V
Power - Peak Pulse: 10W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 16000 Stücke:
Lieferzeit 21-28 Tag (e)
8000+0.15 EUR
16000+ 0.13 EUR
Mindestbestellmenge: 8000
RSB6.8CST2RA RSB6.8CST2RA Rohm Semiconductor RSB6.8CS_DS.pdf Description: TVS DIODE 3.5VWM VMN2
Produkt ist nicht verfügbar
RSB6.8ZST2N RSB6.8ZST2N Rohm Semiconductor rsb6.8zs.pdf Description: TVS DIODE 3.5VWM GMD2
Produkt ist nicht verfügbar
RSJ10HN06TL RSJ10HN06TL Rohm Semiconductor RSJ10HN06.pdf Description: MOSFET N-CH 60V 100A LPTS
Produkt ist nicht verfügbar
RSJ250P10TL RSJ250P10TL Rohm Semiconductor rsj250p10tl-e.pdf Description: MOSFET P-CH 100V 25A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Produkt ist nicht verfügbar
RSJ400N06TL RSJ400N06TL Rohm Semiconductor RSJ400N06.pdf Description: MOSFET N-CH 60V 40A LPTS
Produkt ist nicht verfügbar
RSJ400N10TL RSJ400N10TL Rohm Semiconductor rsj400n10tl-e.pdf Description: MOSFET N-CH 100V 40A LPTS
Produkt ist nicht verfügbar
RSJ450N04TL RSJ450N04TL Rohm Semiconductor Description: MOSFET N-CH 40V 45A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+2.41 EUR
Mindestbestellmenge: 1000
RSJ550N10TL RSJ550N10TL Rohm Semiconductor rsj550n10.pdf Description: MOSFET N-CH 100V 55A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 16.8mOhm @ 27.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V
Produkt ist nicht verfügbar
RSJ650N10TL RSJ650N10TL Rohm Semiconductor rsj650n10-e.pdf Description: MOSFET N-CH 100V 65A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 32.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10780 pF @ 25 V
Produkt ist nicht verfügbar
RSJ800N06TL RSJ800N06TL Rohm Semiconductor Description: MOSFET N-CH 60V 80A LPTS
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
RSR010N10TL RSR010N10TL Rohm Semiconductor Description: MOSFET N-CH 100V 1A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.59 EUR
Mindestbestellmenge: 3000
R6004CNDTL R6004CNDTL Rohm Semiconductor r6004cndtl-e.pdf Description: MOSFET N-CH 600V 4A CPT
auf Bestellung 4226 Stücke:
Lieferzeit 21-28 Tag (e)
R6006ANDTL R6006ANDTL Rohm Semiconductor datasheet?p=R6006AND&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 6A CPT
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
auf Bestellung 2350 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.46 EUR
10+ 4.91 EUR
100+ 3.94 EUR
500+ 3.24 EUR
1000+ 2.68 EUR
Mindestbestellmenge: 5
R6008FNJTL R6008FNJTL Rohm Semiconductor r6008fnj-e.pdf Description: MOSFET N-CH 600V 8A LPTS
auf Bestellung 1751 Stücke:
Lieferzeit 21-28 Tag (e)
RFN10B3STL RFN10B3STL Rohm Semiconductor RFN10B3S.pdf Description: DIODE GEN PURP 350V 10A CPD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: CPD
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Produkt ist nicht verfügbar
MP6K11TCR MP6K11TCR Rohm Semiconductor mp6k11.pdf Description: MOSFET 2N-CH 30V 3.5A MPT6
Produkt ist nicht verfügbar
MP6K12TCR MP6K12TCR Rohm Semiconductor MP6K12.pdf Description: MOSFET 2N-CH 30V 5A MPT6
Produkt ist nicht verfügbar
MP6K13TCR MP6K13TCR Rohm Semiconductor MP6K13.pdf Description: MOSFET 2N-CH 30V 6A MPT6
Produkt ist nicht verfügbar
MP6K14TCR MP6K14TCR Rohm Semiconductor MP6K14.pdf Description: MOSFET 2N-CH 30V 8A MPT6
Produkt ist nicht verfügbar
MP6K31TCR MP6K31TCR Rohm Semiconductor MP6K31.pdf Description: MOSFET 2N-CH 60V 2A MPT6
Produkt ist nicht verfügbar
MP6M11TCR MP6M11TCR Rohm Semiconductor MP6M11.pdf Description: MOSFET N/P-CH 30V 3.5A MPT6
Produkt ist nicht verfügbar
MP6M12TCR MP6M12TCR Rohm Semiconductor MP6M12.pdf Description: MOSFET N/P-CH 30V 5A MPT6
Produkt ist nicht verfügbar
MP6M14TCR MP6M14TCR Rohm Semiconductor MP6M14.pdf Description: MOSFET N/P-CH 30V 8A/6A MPT6
Produkt ist nicht verfügbar
QS8K51TR QS8K51TR Rohm Semiconductor datasheet?p=QS8K51&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 2A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Supplier Device Package: TSMT8
Part Status: Not For New Designs
Produkt ist nicht verfügbar
QS8M12TCR QS8M12TCR Rohm Semiconductor QS8M12.pdf Description: MOSFET N/P-CH 30V 4A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Not For New Designs
Produkt ist nicht verfügbar
QS8M51TR QS8M51TR Rohm Semiconductor datasheet?p=QS8M51&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 100V 2A/1.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 35306 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.3 EUR
10+ 2.71 EUR
100+ 2.11 EUR
500+ 1.79 EUR
1000+ 1.46 EUR
Mindestbestellmenge: 8
RCJ300N20TL RCJ300N20TL Rohm Semiconductor datasheet?p=RCJ300N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 30A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Produkt ist nicht verfügbar
RCJ330N25TL RCJ330N25TL Rohm Semiconductor datasheet?p=RCJ330N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 33A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
RCJ450N20TL RCJ450N20TL Rohm Semiconductor datasheet?p=RCJ450N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 45A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
auf Bestellung 67 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.67 EUR
10+ 6.9 EUR
25+ 6.52 EUR
Mindestbestellmenge: 4
RCJ510N25TL RCJ510N25TL Rohm Semiconductor datasheet?p=RCJ510N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 51A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
auf Bestellung 5015 Stücke:
Lieferzeit 21-28 Tag (e)
3+11.44 EUR
10+ 10.29 EUR
25+ 9.73 EUR
100+ 8.43 EUR
250+ 8 EUR
500+ 7.18 EUR
Mindestbestellmenge: 3
RCJ700N20TL RCJ700N20TL Rohm Semiconductor datasheet?p=RCJ700N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 70A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 35A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 21-28 Tag (e)
3+12.04 EUR
Mindestbestellmenge: 3
RF201L4STE25 RF201L4STE25 Rohm Semiconductor rf201l4s.pdf Description: DIODE GEN PURP 400V 1.5A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
RFN1L6STE25 RFN1L6STE25 Rohm Semiconductor Description: DIODE GEN PURP 600V 800MA PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
RFN1L7STE25 RFN1L7STE25 Rohm Semiconductor Description: DIODE GEN PURP 700V 800MA PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 700 V
Produkt ist nicht verfügbar
RFUH10NS6STL RFUH10NS6STL Rohm Semiconductor rfuh10ns6s.pdf Description: DIODE GEN PURP 600V 10A LPDS
auf Bestellung 565 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.26 EUR
10+ 3.83 EUR
100+ 2.99 EUR
500+ 2.47 EUR
Mindestbestellmenge: 7
RFUH20NS6STL RFUH20NS6STL Rohm Semiconductor datasheet?p=RFUH20NS6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 600V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 953 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.11 EUR
10+ 3.42 EUR
100+ 2.72 EUR
500+ 2.3 EUR
Mindestbestellmenge: 7
RP1E075RPTR RP1E075RPTR Rohm Semiconductor RP1E075RP.pdf Description: MOSFET P-CH 30V 7.5A MPT6
Produkt ist nicht verfügbar
RP1E100XNTR RP1E100XNTR Rohm Semiconductor RP1E100XN.pdf Description: MOSFET N-CH 30V 10A MPT6
Produkt ist nicht verfügbar
RP1E125XNTR RP1E125XNTR Rohm Semiconductor RP1E125XN.pdf Description: MOSFET N-CH 30V 12.5A MPT6
Produkt ist nicht verfügbar
RP1L055SNTR RP1L055SNTR Rohm Semiconductor RP1L055SN.pdf Description: MOSFET N-CH 60V 5.5A MPT6
Produkt ist nicht verfügbar
RP1L080SNTR RP1L080SNTR Rohm Semiconductor RP1L080SN.pdf Description: MOSFET N-CH 60V 8A MPT6
Produkt ist nicht verfügbar
RQ3E100MNTB1 RQ3E100MNTB1 Rohm Semiconductor RQ3E100MN Description: MOSFET N-CH 30V 10A HSMT8
auf Bestellung 5261 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.73 EUR
11+ 2.44 EUR
100+ 1.9 EUR
500+ 1.57 EUR
1000+ 1.24 EUR
Mindestbestellmenge: 10
RQ3E130MNTB1 RQ3E130MNTB1 Rohm Semiconductor rq3e130mn.pdf Description: MOSFET N-CH 30V 13A 8HSMT
auf Bestellung 2969 Stücke:
Lieferzeit 21-28 Tag (e)
RQ3E150MNTB1 RQ3E150MNTB1 Rohm Semiconductor RQ3E150MN Description: MOSFET N-CH 30V 15A 8HSMT
auf Bestellung 2355 Stücke:
Lieferzeit 21-28 Tag (e)
RSB33VTE-17 RSB33VTE-17 Rohm Semiconductor datasheet?p=RSB33V&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 25VWM UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 148028 Stücke:
Lieferzeit 21-28 Tag (e)
30+0.88 EUR
37+ 0.72 EUR
100+ 0.49 EUR
500+ 0.37 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 30
RSB36VTE-17 RSB36VTE-17 Rohm Semiconductor rsb36v.pdf Description: TVS DIODE 27VWM UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 27V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 32.4V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 9019 Stücke:
Lieferzeit 21-28 Tag (e)
30+0.88 EUR
39+ 0.68 EUR
100+ 0.41 EUR
500+ 0.38 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 30
RSB39VTE-17 RSB39VTE-17 Rohm Semiconductor datasheet?p=RSB39V&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 30VWM UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 114595 Stücke:
Lieferzeit 21-28 Tag (e)
27+0.99 EUR
36+ 0.74 EUR
100+ 0.46 EUR
500+ 0.31 EUR
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RSB5.6SMT2N RSB5.6SMT2N Rohm Semiconductor datasheet?p=RSB5.6SM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 2.5VWM EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 2.5V
Supplier Device Package: EMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4.76V
Power - Peak Pulse: 10W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 23974 Stücke:
Lieferzeit 21-28 Tag (e)
27+0.99 EUR
33+ 0.81 EUR
100+ 0.43 EUR
500+ 0.28 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 27
RSB6.8CST2RA RSB6.8CST2RA Rohm Semiconductor RSB6.8CS_DS.pdf Description: TVS DIODE 3.5VWM VMN2
auf Bestellung 7111 Stücke:
Lieferzeit 21-28 Tag (e)
20+1.3 EUR
25+ 1.06 EUR
100+ 0.72 EUR
500+ 0.54 EUR
1000+ 0.4 EUR
2000+ 0.37 EUR
Mindestbestellmenge: 20
RSB6.8ZST2N RSB6.8ZST2N Rohm Semiconductor rsb6.8zs.pdf Description: TVS DIODE 3.5VWM GMD2
Produkt ist nicht verfügbar
RSJ10HN06TL RSJ10HN06TL Rohm Semiconductor RSJ10HN06.pdf Description: MOSFET N-CH 60V 100A LPTS
Produkt ist nicht verfügbar
RSJ250P10TL RSJ250P10TL Rohm Semiconductor rsj250p10tl-e.pdf Description: MOSFET P-CH 100V 25A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 1352 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.63 EUR
10+ 5.56 EUR
100+ 4.5 EUR
500+ 4 EUR
Mindestbestellmenge: 4
RP1L055SNTR RP1L055SN.pdf
RP1L055SNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 5.5A MPT6
Produkt ist nicht verfügbar
RP1L080SNTR RP1L080SN.pdf
RP1L080SNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 8A MPT6
Produkt ist nicht verfügbar
RQ3E100MNTB1 RQ3E100MN
RQ3E100MNTB1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A HSMT8
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.16 EUR
Mindestbestellmenge: 3000
RQ3E150MNTB1 RQ3E150MN
RQ3E150MNTB1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 15A 8HSMT
Produkt ist nicht verfügbar
RSB33VTE-17 datasheet?p=RSB33V&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RSB33VTE-17
Hersteller: Rohm Semiconductor
Description: TVS DIODE 25VWM UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 147000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.25 EUR
6000+ 0.24 EUR
15000+ 0.22 EUR
Mindestbestellmenge: 3000
RSB36VTE-17 rsb36v.pdf
RSB36VTE-17
Hersteller: Rohm Semiconductor
Description: TVS DIODE 27VWM UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 27V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 32.4V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.24 EUR
6000+ 0.23 EUR
9000+ 0.21 EUR
Mindestbestellmenge: 3000
RSB39VTE-17 datasheet?p=RSB39V&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RSB39VTE-17
Hersteller: Rohm Semiconductor
Description: TVS DIODE 30VWM UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 114000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.22 EUR
6000+ 0.2 EUR
15000+ 0.19 EUR
30000+ 0.18 EUR
Mindestbestellmenge: 3000
RSB5.6SMT2N datasheet?p=RSB5.6SM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RSB5.6SMT2N
Hersteller: Rohm Semiconductor
Description: TVS DIODE 2.5VWM EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 2.5V
Supplier Device Package: EMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4.76V
Power - Peak Pulse: 10W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 16000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8000+0.15 EUR
16000+ 0.13 EUR
Mindestbestellmenge: 8000
RSB6.8CST2RA RSB6.8CS_DS.pdf
RSB6.8CST2RA
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM VMN2
Produkt ist nicht verfügbar
RSB6.8ZST2N rsb6.8zs.pdf
RSB6.8ZST2N
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM GMD2
Produkt ist nicht verfügbar
RSJ10HN06TL RSJ10HN06.pdf
RSJ10HN06TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 100A LPTS
Produkt ist nicht verfügbar
RSJ250P10TL rsj250p10tl-e.pdf
RSJ250P10TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 100V 25A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Produkt ist nicht verfügbar
RSJ400N06TL RSJ400N06.pdf
RSJ400N06TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 40A LPTS
Produkt ist nicht verfügbar
RSJ400N10TL rsj400n10tl-e.pdf
RSJ400N10TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 40A LPTS
Produkt ist nicht verfügbar
RSJ450N04TL
RSJ450N04TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 40V 45A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+2.41 EUR
Mindestbestellmenge: 1000
RSJ550N10TL rsj550n10.pdf
RSJ550N10TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 55A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 16.8mOhm @ 27.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V
Produkt ist nicht verfügbar
RSJ650N10TL rsj650n10-e.pdf
RSJ650N10TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 65A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 32.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10780 pF @ 25 V
Produkt ist nicht verfügbar
RSJ800N06TL
RSJ800N06TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 80A LPTS
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
RSR010N10TL
RSR010N10TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 1A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.59 EUR
Mindestbestellmenge: 3000
R6004CNDTL r6004cndtl-e.pdf
R6004CNDTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 4A CPT
auf Bestellung 4226 Stücke:
Lieferzeit 21-28 Tag (e)
R6006ANDTL datasheet?p=R6006AND&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6006ANDTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 6A CPT
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
auf Bestellung 2350 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.46 EUR
10+ 4.91 EUR
100+ 3.94 EUR
500+ 3.24 EUR
1000+ 2.68 EUR
Mindestbestellmenge: 5
R6008FNJTL r6008fnj-e.pdf
R6008FNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 8A LPTS
auf Bestellung 1751 Stücke:
Lieferzeit 21-28 Tag (e)
RFN10B3STL RFN10B3S.pdf
RFN10B3STL
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 350V 10A CPD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: CPD
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Produkt ist nicht verfügbar
MP6K11TCR mp6k11.pdf
MP6K11TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 3.5A MPT6
Produkt ist nicht verfügbar
MP6K12TCR MP6K12.pdf
MP6K12TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5A MPT6
Produkt ist nicht verfügbar
MP6K13TCR MP6K13.pdf
MP6K13TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 6A MPT6
Produkt ist nicht verfügbar
MP6K14TCR MP6K14.pdf
MP6K14TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 8A MPT6
Produkt ist nicht verfügbar
MP6K31TCR MP6K31.pdf
MP6K31TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 2A MPT6
Produkt ist nicht verfügbar
MP6M11TCR MP6M11.pdf
MP6M11TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 3.5A MPT6
Produkt ist nicht verfügbar
MP6M12TCR MP6M12.pdf
MP6M12TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A MPT6
Produkt ist nicht verfügbar
MP6M14TCR MP6M14.pdf
MP6M14TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 8A/6A MPT6
Produkt ist nicht verfügbar
QS8K51TR datasheet?p=QS8K51&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS8K51TR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 2A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Supplier Device Package: TSMT8
Part Status: Not For New Designs
Produkt ist nicht verfügbar
QS8M12TCR QS8M12.pdf
QS8M12TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 4A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Not For New Designs
Produkt ist nicht verfügbar
QS8M51TR datasheet?p=QS8M51&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS8M51TR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 2A/1.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 35306 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.3 EUR
10+ 2.71 EUR
100+ 2.11 EUR
500+ 1.79 EUR
1000+ 1.46 EUR
Mindestbestellmenge: 8
RCJ300N20TL datasheet?p=RCJ300N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCJ300N20TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 30A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Produkt ist nicht verfügbar
RCJ330N25TL datasheet?p=RCJ330N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCJ330N25TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 33A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
RCJ450N20TL datasheet?p=RCJ450N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCJ450N20TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 45A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
auf Bestellung 67 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.67 EUR
10+ 6.9 EUR
25+ 6.52 EUR
Mindestbestellmenge: 4
RCJ510N25TL datasheet?p=RCJ510N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCJ510N25TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 51A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
auf Bestellung 5015 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+11.44 EUR
10+ 10.29 EUR
25+ 9.73 EUR
100+ 8.43 EUR
250+ 8 EUR
500+ 7.18 EUR
Mindestbestellmenge: 3
RCJ700N20TL datasheet?p=RCJ700N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCJ700N20TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 70A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 35A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+12.04 EUR
Mindestbestellmenge: 3
RF201L4STE25 rf201l4s.pdf
RF201L4STE25
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 400V 1.5A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
RFN1L6STE25
RFN1L6STE25
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 800MA PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
RFN1L7STE25
RFN1L7STE25
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 700V 800MA PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 700 V
Produkt ist nicht verfügbar
RFUH10NS6STL rfuh10ns6s.pdf
RFUH10NS6STL
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 10A LPDS
auf Bestellung 565 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.26 EUR
10+ 3.83 EUR
100+ 2.99 EUR
500+ 2.47 EUR
Mindestbestellmenge: 7
RFUH20NS6STL datasheet?p=RFUH20NS6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFUH20NS6STL
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 953 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.11 EUR
10+ 3.42 EUR
100+ 2.72 EUR
500+ 2.3 EUR
Mindestbestellmenge: 7
RP1E075RPTR RP1E075RP.pdf
RP1E075RPTR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 7.5A MPT6
Produkt ist nicht verfügbar
RP1E100XNTR RP1E100XN.pdf
RP1E100XNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A MPT6
Produkt ist nicht verfügbar
RP1E125XNTR RP1E125XN.pdf
RP1E125XNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 12.5A MPT6
Produkt ist nicht verfügbar
RP1L055SNTR RP1L055SN.pdf
RP1L055SNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 5.5A MPT6
Produkt ist nicht verfügbar
RP1L080SNTR RP1L080SN.pdf
RP1L080SNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 8A MPT6
Produkt ist nicht verfügbar
RQ3E100MNTB1 RQ3E100MN
RQ3E100MNTB1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A HSMT8
auf Bestellung 5261 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.73 EUR
11+ 2.44 EUR
100+ 1.9 EUR
500+ 1.57 EUR
1000+ 1.24 EUR
Mindestbestellmenge: 10
RQ3E130MNTB1 rq3e130mn.pdf
RQ3E130MNTB1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 13A 8HSMT
auf Bestellung 2969 Stücke:
Lieferzeit 21-28 Tag (e)
RQ3E150MNTB1 RQ3E150MN
RQ3E150MNTB1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 15A 8HSMT
auf Bestellung 2355 Stücke:
Lieferzeit 21-28 Tag (e)
RSB33VTE-17 datasheet?p=RSB33V&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RSB33VTE-17
Hersteller: Rohm Semiconductor
Description: TVS DIODE 25VWM UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 148028 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
30+0.88 EUR
37+ 0.72 EUR
100+ 0.49 EUR
500+ 0.37 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 30
RSB36VTE-17 rsb36v.pdf
RSB36VTE-17
Hersteller: Rohm Semiconductor
Description: TVS DIODE 27VWM UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 27V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 32.4V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 9019 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
30+0.88 EUR
39+ 0.68 EUR
100+ 0.41 EUR
500+ 0.38 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 30
RSB39VTE-17 datasheet?p=RSB39V&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RSB39VTE-17
Hersteller: Rohm Semiconductor
Description: TVS DIODE 30VWM UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 114595 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
27+0.99 EUR
36+ 0.74 EUR
100+ 0.46 EUR
500+ 0.31 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 27
RSB5.6SMT2N datasheet?p=RSB5.6SM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RSB5.6SMT2N
Hersteller: Rohm Semiconductor
Description: TVS DIODE 2.5VWM EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 2.5V
Supplier Device Package: EMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4.76V
Power - Peak Pulse: 10W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 23974 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
27+0.99 EUR
33+ 0.81 EUR
100+ 0.43 EUR
500+ 0.28 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 27
RSB6.8CST2RA RSB6.8CS_DS.pdf
RSB6.8CST2RA
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM VMN2
auf Bestellung 7111 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
20+1.3 EUR
25+ 1.06 EUR
100+ 0.72 EUR
500+ 0.54 EUR
1000+ 0.4 EUR
2000+ 0.37 EUR
Mindestbestellmenge: 20
RSB6.8ZST2N rsb6.8zs.pdf
RSB6.8ZST2N
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM GMD2
Produkt ist nicht verfügbar
RSJ10HN06TL RSJ10HN06.pdf
RSJ10HN06TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 100A LPTS
Produkt ist nicht verfügbar
RSJ250P10TL rsj250p10tl-e.pdf
RSJ250P10TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 100V 25A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 1352 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.63 EUR
10+ 5.56 EUR
100+ 4.5 EUR
500+ 4 EUR
Mindestbestellmenge: 4
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