Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (96383) > Seite 452 nach 1607
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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RP1L055SNTR | Rohm Semiconductor | Description: MOSFET N-CH 60V 5.5A MPT6 |
Produkt ist nicht verfügbar |
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RP1L080SNTR | Rohm Semiconductor | Description: MOSFET N-CH 60V 8A MPT6 |
Produkt ist nicht verfügbar |
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RQ3E100MNTB1 | Rohm Semiconductor | Description: MOSFET N-CH 30V 10A HSMT8 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RQ3E150MNTB1 | Rohm Semiconductor | Description: MOSFET N-CH 30V 15A 8HSMT |
Produkt ist nicht verfügbar |
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RSB33VTE-17 | Rohm Semiconductor |
Description: TVS DIODE 25VWM UMD2 Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 30pF @ 1MHz Voltage - Reverse Standoff (Typ): 25V Supplier Device Package: UMD2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 29.7V Power Line Protection: No Part Status: Not For New Designs |
auf Bestellung 147000 Stücke: Lieferzeit 21-28 Tag (e) |
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RSB36VTE-17 | Rohm Semiconductor |
Description: TVS DIODE 27VWM UMD2 Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 30pF @ 1MHz Voltage - Reverse Standoff (Typ): 27V Supplier Device Package: UMD2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 32.4V Power Line Protection: No Part Status: Not For New Designs |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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RSB39VTE-17 | Rohm Semiconductor |
Description: TVS DIODE 30VWM UMD2 Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 30pF @ 1MHz Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: UMD2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 35.1V Power Line Protection: No Part Status: Not For New Designs |
auf Bestellung 114000 Stücke: Lieferzeit 21-28 Tag (e) |
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RSB5.6SMT2N | Rohm Semiconductor |
Description: TVS DIODE 2.5VWM EMD2 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 2.5V Supplier Device Package: EMD2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 4.76V Power - Peak Pulse: 10W Power Line Protection: No Part Status: Not For New Designs |
auf Bestellung 16000 Stücke: Lieferzeit 21-28 Tag (e) |
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RSB6.8CST2RA | Rohm Semiconductor | Description: TVS DIODE 3.5VWM VMN2 |
Produkt ist nicht verfügbar |
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RSB6.8ZST2N | Rohm Semiconductor | Description: TVS DIODE 3.5VWM GMD2 |
Produkt ist nicht verfügbar |
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RSJ10HN06TL | Rohm Semiconductor | Description: MOSFET N-CH 60V 100A LPTS |
Produkt ist nicht verfügbar |
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RSJ250P10TL | Rohm Semiconductor |
Description: MOSFET P-CH 100V 25A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V |
Produkt ist nicht verfügbar |
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RSJ400N06TL | Rohm Semiconductor | Description: MOSFET N-CH 60V 40A LPTS |
Produkt ist nicht verfügbar |
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RSJ400N10TL | Rohm Semiconductor | Description: MOSFET N-CH 100V 40A LPTS |
Produkt ist nicht verfügbar |
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RSJ450N04TL | Rohm Semiconductor |
Description: MOSFET N-CH 40V 45A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: LPTS Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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RSJ550N10TL | Rohm Semiconductor |
Description: MOSFET N-CH 100V 55A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Rds On (Max) @ Id, Vgs: 16.8mOhm @ 27.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V |
Produkt ist nicht verfügbar |
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RSJ650N10TL | Rohm Semiconductor |
Description: MOSFET N-CH 100V 65A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Ta) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 32.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10780 pF @ 25 V |
Produkt ist nicht verfügbar |
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RSJ800N06TL | Rohm Semiconductor | Description: MOSFET N-CH 60V 80A LPTS |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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RSR010N10TL | Rohm Semiconductor |
Description: MOSFET N-CH 100V 1A TSMT3 Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V Power Dissipation (Max): 540mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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R6004CNDTL | Rohm Semiconductor | Description: MOSFET N-CH 600V 4A CPT |
auf Bestellung 4226 Stücke: Lieferzeit 21-28 Tag (e) |
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R6006ANDTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 6A CPT Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V |
auf Bestellung 2350 Stücke: Lieferzeit 21-28 Tag (e) |
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R6008FNJTL | Rohm Semiconductor | Description: MOSFET N-CH 600V 8A LPTS |
auf Bestellung 1751 Stücke: Lieferzeit 21-28 Tag (e) |
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RFN10B3STL | Rohm Semiconductor |
Description: DIODE GEN PURP 350V 10A CPD Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: CPD Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 350 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 350 V |
Produkt ist nicht verfügbar |
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MP6K11TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 3.5A MPT6 |
Produkt ist nicht verfügbar |
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MP6K12TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 5A MPT6 |
Produkt ist nicht verfügbar |
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MP6K13TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 6A MPT6 |
Produkt ist nicht verfügbar |
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MP6K14TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 8A MPT6 |
Produkt ist nicht verfügbar |
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MP6K31TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 60V 2A MPT6 |
Produkt ist nicht verfügbar |
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MP6M11TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 30V 3.5A MPT6 |
Produkt ist nicht verfügbar |
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MP6M12TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 30V 5A MPT6 |
Produkt ist nicht verfügbar |
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MP6M14TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 30V 8A/6A MPT6 |
Produkt ist nicht verfügbar |
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QS8K51TR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 2A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A Supplier Device Package: TSMT8 Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
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QS8M12TCR | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 4A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
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QS8M51TR | Rohm Semiconductor |
Description: MOSFET N/P-CH 100V 2A/1.5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
auf Bestellung 35306 Stücke: Lieferzeit 21-28 Tag (e) |
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RCJ300N20TL | Rohm Semiconductor |
Description: MOSFET N-CH 200V 30A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V |
Produkt ist nicht verfügbar |
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RCJ330N25TL | Rohm Semiconductor |
Description: MOSFET N-CH 250V 33A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V |
Produkt ist nicht verfügbar |
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RCJ450N20TL | Rohm Semiconductor |
Description: MOSFET N-CH 200V 45A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V |
auf Bestellung 67 Stücke: Lieferzeit 21-28 Tag (e) |
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RCJ510N25TL | Rohm Semiconductor |
Description: MOSFET N-CH 250V 51A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V |
auf Bestellung 5015 Stücke: Lieferzeit 21-28 Tag (e) |
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RCJ700N20TL | Rohm Semiconductor |
Description: MOSFET N-CH 200V 70A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 42.7mOhm @ 35A, 10V Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V |
auf Bestellung 4 Stücke: Lieferzeit 21-28 Tag (e) |
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RF201L4STE25 | Rohm Semiconductor |
Description: DIODE GEN PURP 400V 1.5A PMDS Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
Produkt ist nicht verfügbar |
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RFN1L6STE25 | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 800MA PMDS Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 800mA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 800 mA Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
Produkt ist nicht verfügbar |
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RFN1L7STE25 | Rohm Semiconductor |
Description: DIODE GEN PURP 700V 800MA PMDS Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Current - Average Rectified (Io): 800mA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 700 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA Current - Reverse Leakage @ Vr: 1 µA @ 700 V |
Produkt ist nicht verfügbar |
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RFUH10NS6STL | Rohm Semiconductor | Description: DIODE GEN PURP 600V 10A LPDS |
auf Bestellung 565 Stücke: Lieferzeit 21-28 Tag (e) |
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RFUH20NS6STL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 20A LPDS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 953 Stücke: Lieferzeit 21-28 Tag (e) |
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RP1E075RPTR | Rohm Semiconductor | Description: MOSFET P-CH 30V 7.5A MPT6 |
Produkt ist nicht verfügbar |
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RP1E100XNTR | Rohm Semiconductor | Description: MOSFET N-CH 30V 10A MPT6 |
Produkt ist nicht verfügbar |
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RP1E125XNTR | Rohm Semiconductor | Description: MOSFET N-CH 30V 12.5A MPT6 |
Produkt ist nicht verfügbar |
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RP1L055SNTR | Rohm Semiconductor | Description: MOSFET N-CH 60V 5.5A MPT6 |
Produkt ist nicht verfügbar |
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RP1L080SNTR | Rohm Semiconductor | Description: MOSFET N-CH 60V 8A MPT6 |
Produkt ist nicht verfügbar |
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RQ3E100MNTB1 | Rohm Semiconductor | Description: MOSFET N-CH 30V 10A HSMT8 |
auf Bestellung 5261 Stücke: Lieferzeit 21-28 Tag (e) |
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RQ3E130MNTB1 | Rohm Semiconductor | Description: MOSFET N-CH 30V 13A 8HSMT |
auf Bestellung 2969 Stücke: Lieferzeit 21-28 Tag (e) |
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RQ3E150MNTB1 | Rohm Semiconductor | Description: MOSFET N-CH 30V 15A 8HSMT |
auf Bestellung 2355 Stücke: Lieferzeit 21-28 Tag (e) |
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RSB33VTE-17 | Rohm Semiconductor |
Description: TVS DIODE 25VWM UMD2 Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 30pF @ 1MHz Voltage - Reverse Standoff (Typ): 25V Supplier Device Package: UMD2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 29.7V Power Line Protection: No Part Status: Not For New Designs |
auf Bestellung 148028 Stücke: Lieferzeit 21-28 Tag (e) |
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RSB36VTE-17 | Rohm Semiconductor |
Description: TVS DIODE 27VWM UMD2 Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 30pF @ 1MHz Voltage - Reverse Standoff (Typ): 27V Supplier Device Package: UMD2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 32.4V Power Line Protection: No Part Status: Not For New Designs |
auf Bestellung 9019 Stücke: Lieferzeit 21-28 Tag (e) |
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RSB39VTE-17 | Rohm Semiconductor |
Description: TVS DIODE 30VWM UMD2 Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 30pF @ 1MHz Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: UMD2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 35.1V Power Line Protection: No Part Status: Not For New Designs |
auf Bestellung 114595 Stücke: Lieferzeit 21-28 Tag (e) |
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RSB5.6SMT2N | Rohm Semiconductor |
Description: TVS DIODE 2.5VWM EMD2 Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 2.5V Supplier Device Package: EMD2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 4.76V Power - Peak Pulse: 10W Power Line Protection: No Part Status: Not For New Designs |
auf Bestellung 23974 Stücke: Lieferzeit 21-28 Tag (e) |
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RSB6.8CST2RA | Rohm Semiconductor | Description: TVS DIODE 3.5VWM VMN2 |
auf Bestellung 7111 Stücke: Lieferzeit 21-28 Tag (e) |
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RSB6.8ZST2N | Rohm Semiconductor | Description: TVS DIODE 3.5VWM GMD2 |
Produkt ist nicht verfügbar |
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RSJ10HN06TL | Rohm Semiconductor | Description: MOSFET N-CH 60V 100A LPTS |
Produkt ist nicht verfügbar |
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RSJ250P10TL | Rohm Semiconductor |
Description: MOSFET P-CH 100V 25A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V |
auf Bestellung 1352 Stücke: Lieferzeit 21-28 Tag (e) |
|
RP1L055SNTR |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 5.5A MPT6
Description: MOSFET N-CH 60V 5.5A MPT6
Produkt ist nicht verfügbar
RP1L080SNTR |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 8A MPT6
Description: MOSFET N-CH 60V 8A MPT6
Produkt ist nicht verfügbar
RQ3E100MNTB1 |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A HSMT8
Description: MOSFET N-CH 30V 10A HSMT8
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.16 EUR |
RQ3E150MNTB1 |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 15A 8HSMT
Description: MOSFET N-CH 30V 15A 8HSMT
Produkt ist nicht verfügbar
RSB33VTE-17 |
Hersteller: Rohm Semiconductor
Description: TVS DIODE 25VWM UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 25VWM UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 147000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.25 EUR |
6000+ | 0.24 EUR |
15000+ | 0.22 EUR |
RSB36VTE-17 |
Hersteller: Rohm Semiconductor
Description: TVS DIODE 27VWM UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 27V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 32.4V
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 27VWM UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 27V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 32.4V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.24 EUR |
6000+ | 0.23 EUR |
9000+ | 0.21 EUR |
RSB39VTE-17 |
Hersteller: Rohm Semiconductor
Description: TVS DIODE 30VWM UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 30VWM UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 114000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.22 EUR |
6000+ | 0.2 EUR |
15000+ | 0.19 EUR |
30000+ | 0.18 EUR |
RSB5.6SMT2N |
Hersteller: Rohm Semiconductor
Description: TVS DIODE 2.5VWM EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 2.5V
Supplier Device Package: EMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4.76V
Power - Peak Pulse: 10W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 2.5VWM EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 2.5V
Supplier Device Package: EMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4.76V
Power - Peak Pulse: 10W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 16000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8000+ | 0.15 EUR |
16000+ | 0.13 EUR |
RSB6.8CST2RA |
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM VMN2
Description: TVS DIODE 3.5VWM VMN2
Produkt ist nicht verfügbar
RSB6.8ZST2N |
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM GMD2
Description: TVS DIODE 3.5VWM GMD2
Produkt ist nicht verfügbar
RSJ10HN06TL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 100A LPTS
Description: MOSFET N-CH 60V 100A LPTS
Produkt ist nicht verfügbar
RSJ250P10TL |
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 100V 25A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Description: MOSFET P-CH 100V 25A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Produkt ist nicht verfügbar
RSJ400N06TL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 40A LPTS
Description: MOSFET N-CH 60V 40A LPTS
Produkt ist nicht verfügbar
RSJ400N10TL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 40A LPTS
Description: MOSFET N-CH 100V 40A LPTS
Produkt ist nicht verfügbar
RSJ450N04TL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 40V 45A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Description: MOSFET N-CH 40V 45A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 2.41 EUR |
RSJ550N10TL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 55A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 16.8mOhm @ 27.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V
Description: MOSFET N-CH 100V 55A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 16.8mOhm @ 27.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V
Produkt ist nicht verfügbar
RSJ650N10TL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 65A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 32.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10780 pF @ 25 V
Description: MOSFET N-CH 100V 65A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 32.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10780 pF @ 25 V
Produkt ist nicht verfügbar
RSJ800N06TL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 80A LPTS
Description: MOSFET N-CH 60V 80A LPTS
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)RSR010N10TL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 1A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Description: MOSFET N-CH 100V 1A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.59 EUR |
R6004CNDTL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 4A CPT
Description: MOSFET N-CH 600V 4A CPT
auf Bestellung 4226 Stücke:
Lieferzeit 21-28 Tag (e)R6006ANDTL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 6A CPT
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Description: MOSFET N-CH 600V 6A CPT
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
auf Bestellung 2350 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.46 EUR |
10+ | 4.91 EUR |
100+ | 3.94 EUR |
500+ | 3.24 EUR |
1000+ | 2.68 EUR |
R6008FNJTL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 8A LPTS
Description: MOSFET N-CH 600V 8A LPTS
auf Bestellung 1751 Stücke:
Lieferzeit 21-28 Tag (e)RFN10B3STL |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 350V 10A CPD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: CPD
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Description: DIODE GEN PURP 350V 10A CPD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: CPD
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Produkt ist nicht verfügbar
MP6K11TCR |
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 3.5A MPT6
Description: MOSFET 2N-CH 30V 3.5A MPT6
Produkt ist nicht verfügbar
MP6K12TCR |
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5A MPT6
Description: MOSFET 2N-CH 30V 5A MPT6
Produkt ist nicht verfügbar
MP6K13TCR |
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 6A MPT6
Description: MOSFET 2N-CH 30V 6A MPT6
Produkt ist nicht verfügbar
MP6K14TCR |
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 8A MPT6
Description: MOSFET 2N-CH 30V 8A MPT6
Produkt ist nicht verfügbar
MP6K31TCR |
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 2A MPT6
Description: MOSFET 2N-CH 60V 2A MPT6
Produkt ist nicht verfügbar
MP6M11TCR |
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 3.5A MPT6
Description: MOSFET N/P-CH 30V 3.5A MPT6
Produkt ist nicht verfügbar
MP6M12TCR |
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A MPT6
Description: MOSFET N/P-CH 30V 5A MPT6
Produkt ist nicht verfügbar
MP6M14TCR |
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 8A/6A MPT6
Description: MOSFET N/P-CH 30V 8A/6A MPT6
Produkt ist nicht verfügbar
QS8K51TR |
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 2A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Supplier Device Package: TSMT8
Part Status: Not For New Designs
Description: MOSFET 2N-CH 30V 2A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Supplier Device Package: TSMT8
Part Status: Not For New Designs
Produkt ist nicht verfügbar
QS8M12TCR |
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 4A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Not For New Designs
Description: MOSFET N/P-CH 30V 4A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Not For New Designs
Produkt ist nicht verfügbar
QS8M51TR |
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 2A/1.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET N/P-CH 100V 2A/1.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 35306 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.3 EUR |
10+ | 2.71 EUR |
100+ | 2.11 EUR |
500+ | 1.79 EUR |
1000+ | 1.46 EUR |
RCJ300N20TL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 30A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Description: MOSFET N-CH 200V 30A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Produkt ist nicht verfügbar
RCJ330N25TL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 33A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Description: MOSFET N-CH 250V 33A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
RCJ450N20TL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 45A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Description: MOSFET N-CH 200V 45A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
auf Bestellung 67 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 7.67 EUR |
10+ | 6.9 EUR |
25+ | 6.52 EUR |
RCJ510N25TL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 51A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Description: MOSFET N-CH 250V 51A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
auf Bestellung 5015 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 11.44 EUR |
10+ | 10.29 EUR |
25+ | 9.73 EUR |
100+ | 8.43 EUR |
250+ | 8 EUR |
500+ | 7.18 EUR |
RCJ700N20TL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 70A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 35A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Description: MOSFET N-CH 200V 70A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 35A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 12.04 EUR |
RF201L4STE25 |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 400V 1.5A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 1.5A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
RFN1L6STE25 |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 800MA PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 800MA PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
RFN1L7STE25 |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 700V 800MA PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 700 V
Description: DIODE GEN PURP 700V 800MA PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 700 V
Produkt ist nicht verfügbar
RFUH10NS6STL |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 10A LPDS
Description: DIODE GEN PURP 600V 10A LPDS
auf Bestellung 565 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 4.26 EUR |
10+ | 3.83 EUR |
100+ | 2.99 EUR |
500+ | 2.47 EUR |
RFUH20NS6STL |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 953 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 4.11 EUR |
10+ | 3.42 EUR |
100+ | 2.72 EUR |
500+ | 2.3 EUR |
RP1E075RPTR |
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 7.5A MPT6
Description: MOSFET P-CH 30V 7.5A MPT6
Produkt ist nicht verfügbar
RP1E100XNTR |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A MPT6
Description: MOSFET N-CH 30V 10A MPT6
Produkt ist nicht verfügbar
RP1E125XNTR |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 12.5A MPT6
Description: MOSFET N-CH 30V 12.5A MPT6
Produkt ist nicht verfügbar
RP1L055SNTR |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 5.5A MPT6
Description: MOSFET N-CH 60V 5.5A MPT6
Produkt ist nicht verfügbar
RP1L080SNTR |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 8A MPT6
Description: MOSFET N-CH 60V 8A MPT6
Produkt ist nicht verfügbar
RQ3E100MNTB1 |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A HSMT8
Description: MOSFET N-CH 30V 10A HSMT8
auf Bestellung 5261 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 2.73 EUR |
11+ | 2.44 EUR |
100+ | 1.9 EUR |
500+ | 1.57 EUR |
1000+ | 1.24 EUR |
RQ3E130MNTB1 |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 13A 8HSMT
Description: MOSFET N-CH 30V 13A 8HSMT
auf Bestellung 2969 Stücke:
Lieferzeit 21-28 Tag (e)RQ3E150MNTB1 |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 15A 8HSMT
Description: MOSFET N-CH 30V 15A 8HSMT
auf Bestellung 2355 Stücke:
Lieferzeit 21-28 Tag (e)RSB33VTE-17 |
Hersteller: Rohm Semiconductor
Description: TVS DIODE 25VWM UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 25VWM UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 148028 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 0.88 EUR |
37+ | 0.72 EUR |
100+ | 0.49 EUR |
500+ | 0.37 EUR |
1000+ | 0.28 EUR |
RSB36VTE-17 |
Hersteller: Rohm Semiconductor
Description: TVS DIODE 27VWM UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 27V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 32.4V
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 27VWM UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 27V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 32.4V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 9019 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 0.88 EUR |
39+ | 0.68 EUR |
100+ | 0.41 EUR |
500+ | 0.38 EUR |
1000+ | 0.26 EUR |
RSB39VTE-17 |
Hersteller: Rohm Semiconductor
Description: TVS DIODE 30VWM UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 30VWM UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 114595 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.99 EUR |
36+ | 0.74 EUR |
100+ | 0.46 EUR |
500+ | 0.31 EUR |
1000+ | 0.24 EUR |
RSB5.6SMT2N |
Hersteller: Rohm Semiconductor
Description: TVS DIODE 2.5VWM EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 2.5V
Supplier Device Package: EMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4.76V
Power - Peak Pulse: 10W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 2.5VWM EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 2.5V
Supplier Device Package: EMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4.76V
Power - Peak Pulse: 10W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 23974 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.99 EUR |
33+ | 0.81 EUR |
100+ | 0.43 EUR |
500+ | 0.28 EUR |
1000+ | 0.19 EUR |
2000+ | 0.17 EUR |
RSB6.8CST2RA |
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM VMN2
Description: TVS DIODE 3.5VWM VMN2
auf Bestellung 7111 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.3 EUR |
25+ | 1.06 EUR |
100+ | 0.72 EUR |
500+ | 0.54 EUR |
1000+ | 0.4 EUR |
2000+ | 0.37 EUR |
RSB6.8ZST2N |
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM GMD2
Description: TVS DIODE 3.5VWM GMD2
Produkt ist nicht verfügbar
RSJ10HN06TL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 100A LPTS
Description: MOSFET N-CH 60V 100A LPTS
Produkt ist nicht verfügbar
RSJ250P10TL |
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 100V 25A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Description: MOSFET P-CH 100V 25A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 1352 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 6.63 EUR |
10+ | 5.56 EUR |
100+ | 4.5 EUR |
500+ | 4 EUR |