Suchergebnisse für "2n60f" : 31

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AOTF12N60FD ALPHA&OMEGA AOTF12N60FD.pdf Transistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
10+2.82 EUR
Mindestbestellmenge: 10
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AOTF12N60FD ALPHA&OMEGA AOTF12N60FD.pdf Transistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd
Anzahl je Verpackung: 10 Stücke
auf Bestellung 28 Stücke:
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10+2.82 EUR
Mindestbestellmenge: 10
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AOTF12N60FD ALPHA&OMEGA AOTF12N60FD.pdf Transistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd
Anzahl je Verpackung: 10 Stücke
auf Bestellung 22 Stücke:
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FCH072N60F FCH072N60F onsemi / Fairchild fch072n60f-d.pdf MOSFETs 600V, 52A, 72mOhm N-Channel Mosfet
auf Bestellung 3190 Stücke:
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10+11.6 EUR
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FCH072N60F FCH072N60F onsemi fch072n60f-d.pdf Description: MOSFET N-CH 600V 52A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 26A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8660 pF @ 100 V
auf Bestellung 15069 Stücke:
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30+8.19 EUR
120+7.67 EUR
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PJMH042N60FRC_T0_00201 PJMH042N60FRC_T0_00201 Panjit International Inc. PJMH042N60FRC Description: 600V 42mohm 69A SJ MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
auf Bestellung 780 Stücke:
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1+22.35 EUR
30+13.65 EUR
120+11.75 EUR
510+11.51 EUR
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FCH072N60F-F085 ON Semiconductor fch072n60f_f085-d.pdf
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SM12N60F
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SM2N60F
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SS2N60F
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WSK02N60FPB
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FQA12N60 FQA12N60 Fairchild Semiconductor FAIRS42369-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 12A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 9750 Stücke:
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201+2.31 EUR
Mindestbestellmenge: 201
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FQP12N60 FQP12N60 Fairchild Semiconductor FAIRS07073-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 10.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 9664 Stücke:
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FQP2N60 FQP2N60 Fairchild Semiconductor FAIRS05663-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 2.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1.2A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 84915 Stücke:
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FQPF12N60 FQPF12N60 Fairchild Semiconductor FAIRS17575-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 5.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2.9A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 55453 Stücke:
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SVD2N60F
Produktcode: 160879
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Transistoren > MOSFET N-CH
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AOB12N60FDL AOB12N60FDL Alpha & Omega Semiconductor Inc. TO263.pdf Description: MOSFET N-CH 600V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
Produkt ist nicht verfügbar
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AOB12N60FDL AOB12N60FDL Alpha & Omega Semiconductor Inc. TO263.pdf Description: MOSFET N-CH 600V 12A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
Produkt ist nicht verfügbar
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AOT12N60FD AOT12N60FD Alpha & Omega Semiconductor Inc. Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
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AOT12N60FDL AOT12N60FDL Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
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AOTF12N60FD AOTF12N60FD Alpha & Omega Semiconductor Inc. AOTF12N60FD.pdf Description: MOSFET N-CH 600V 12A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
Produkt ist nicht verfügbar
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FCH072N60F ONSEMI fch072n60f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCH072N60F ONSEMI fch072n60f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FCH072N60F-F085 FCH072N60F-F085 onsemi fch072n60f_f085-d.pdf Description: MOSFET N-CH 600V 52A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 26A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PJMH042N60FRC_T0_00201 PJMH042N60FRC_T0_00201 Panjit PJMH042N60FRC-3532050.pdf MOSFETs 600V/ 42mohm / 69A/ SJ MOSFET with Fast Recovery Qrr/trr / Ruggednss
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AOTF12N60FD AOTF12N60FD.pdf
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+2.82 EUR
Mindestbestellmenge: 10
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AOTF12N60FD AOTF12N60FD.pdf
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd
Anzahl je Verpackung: 10 Stücke
auf Bestellung 28 Stücke:
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Anzahl Preis
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AOTF12N60FD AOTF12N60FD.pdf
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd
Anzahl je Verpackung: 10 Stücke
auf Bestellung 22 Stücke:
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Anzahl Preis
10+2.82 EUR
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FCH072N60F fch072n60f-d.pdf
FCH072N60F
Hersteller: onsemi / Fairchild
MOSFETs 600V, 52A, 72mOhm N-Channel Mosfet
auf Bestellung 3190 Stücke:
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Anzahl Preis
1+12.48 EUR
10+11.6 EUR
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FCH072N60F fch072n60f-d.pdf
FCH072N60F
Hersteller: onsemi
Description: MOSFET N-CH 600V 52A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 26A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8660 pF @ 100 V
auf Bestellung 15069 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.14 EUR
30+8.19 EUR
120+7.67 EUR
510+7.12 EUR
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PJMH042N60FRC_T0_00201 PJMH042N60FRC
PJMH042N60FRC_T0_00201
Hersteller: Panjit International Inc.
Description: 600V 42mohm 69A SJ MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
auf Bestellung 780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.35 EUR
30+13.65 EUR
120+11.75 EUR
510+11.51 EUR
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FCH072N60F-F085 fch072n60f_f085-d.pdf
Hersteller: ON Semiconductor
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SM12N60F
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SM2N60F
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SS2N60F
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STH12N60FI
auf Bestellung 8600 Stücke:
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STP2N60FI
auf Bestellung 7906 Stücke:
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SVD2N60F
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WSK02N60F
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WSK02N60FPB
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FQA12N60 FAIRS42369-1.pdf?t.download=true&u=5oefqw
FQA12N60
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 12A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 9750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
201+2.31 EUR
Mindestbestellmenge: 201
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FQP12N60 FAIRS07073-1.pdf?t.download=true&u=5oefqw
FQP12N60
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 10.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 9664 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
182+2.54 EUR
Mindestbestellmenge: 182
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FQP2N60 FAIRS05663-1.pdf?t.download=true&u=5oefqw
FQP2N60
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 2.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1.2A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 84915 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
251+1.85 EUR
Mindestbestellmenge: 251
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FQPF12N60 FAIRS17575-1.pdf?t.download=true&u=5oefqw
FQPF12N60
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 5.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2.9A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 55453 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
110+4.22 EUR
Mindestbestellmenge: 110
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SVD2N60F
Produktcode: 160879
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Transistoren > MOSFET N-CH
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AOB12N60FDL TO263.pdf
AOB12N60FDL
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
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AOB12N60FDL TO263.pdf
AOB12N60FDL
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 12A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
Produkt ist nicht verfügbar
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AOT12N60FD
AOT12N60FD
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
Produkt ist nicht verfügbar
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AOT12N60FDL AOSGreenPolicy.pdf
AOT12N60FDL
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
Produkt ist nicht verfügbar
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AOTF12N60FD AOTF12N60FD.pdf
AOTF12N60FD
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 12A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
Produkt ist nicht verfügbar
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FCH072N60F fch072n60f-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCH072N60F fch072n60f-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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FCH072N60F-F085 fch072n60f_f085-d.pdf
FCH072N60F-F085
Hersteller: onsemi
Description: MOSFET N-CH 600V 52A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 26A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 100 V
Qualification: AEC-Q101
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PJMH042N60FRC_T0_00201 PJMH042N60FRC-3532050.pdf
PJMH042N60FRC_T0_00201
Hersteller: Panjit
MOSFETs 600V/ 42mohm / 69A/ SJ MOSFET with Fast Recovery Qrr/trr / Ruggednss
Produkt ist nicht verfügbar
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