Suchergebnisse für "IRF1324S-7P" : 7

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IRF1324S-7PPBF IRF1324S-7PPBF
Produktcode: 98274
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IR irf1324s-7ppbf.pdf?fileId=5546d462533600a4015355dad16e18a9 Transistoren > MOSFET N-CH
Gehäuse: D2Pak (TO-263-2)
JHGF: SMD
Produkt ist nicht verfügbar
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IRF1324S-7P IRF1324S-7P Infineon / IR irf1324s_7ppbf-3168031.pdf MOSFETs
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IRF1324S-7PPBF IRF1324S-7PPBF Infineon Technologies irf1324s-7ppbf.pdf?fileId=5546d462533600a4015355dad16e18a9 Description: MOSFET N-CH 24V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 19 V
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AUIRF1324S-7P AUIRF1324S-7P INFINEON TECHNOLOGIES auirf1324s-7p.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 429A; 300W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 429A
Power dissipation: 300W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhancement
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AUIRF1324S-7P AUIRF1324S-7P INFINEON TECHNOLOGIES auirf1324s-7p.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 429A; 300W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 429A
Power dissipation: 300W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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AUIRF1324S-7P AUIRF1324S-7P Infineon Technologies auirf1324s-7p.pdf?fileId=5546d462533600a4015355a8ba81136e Description: MOSFET N-CH 24V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 19 V
Grade: Automotive
Qualification: AEC-Q101
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IRF1324S-7PPBF
Produktcode: 98274
zu Favoriten hinzufügen Lieblingsprodukt

irf1324s-7ppbf.pdf?fileId=5546d462533600a4015355dad16e18a9
IRF1324S-7PPBF
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: D2Pak (TO-263-2)
JHGF: SMD
Produkt ist nicht verfügbar
Anzahl Preis
1+3.96 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRF1324S-7P irf1324s_7ppbf-3168031.pdf
IRF1324S-7P
Hersteller: Infineon / IR
MOSFETs
Produkt ist nicht verfügbar
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IRF1324S-7PPBF irf1324s-7ppbf.pdf?fileId=5546d462533600a4015355dad16e18a9
IRF1324S-7PPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 24V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 19 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF1324S-7P auirf1324s-7p.pdf
AUIRF1324S-7P
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 429A; 300W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 429A
Power dissipation: 300W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF1324S-7P auirf1324s-7p.pdf
AUIRF1324S-7P
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 429A; 300W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 429A
Power dissipation: 300W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF1324S-7P auirf1324s-7p.pdf?fileId=5546d462533600a4015355a8ba81136e
AUIRF1324S-7P
Hersteller: Infineon Technologies
Description: MOSFET N-CH 24V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 19 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH