Suchergebnisse für "QFET" : > 60

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QFET-3000
auf Bestellung 488 Stücke:
Lieferzeit 21-28 Tag (e)
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QFET-3000-TR1G
auf Bestellung 355 Stücke:
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QFET-3002-TR1
auf Bestellung 170 Stücke:
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QFET-3003-TR1
auf Bestellung 3081 Stücke:
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QFET-3006-TR1
auf Bestellung 844 Stücke:
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QFET-3006-TR1G
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QFET-3006TR1G Agilent 0539+
auf Bestellung 3000 Stücke:
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QFET-3006TR1G Agilent
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
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QFET-3008-TR1 AGILENT 2005 TO23-4
auf Bestellung 3050 Stücke:
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FDB047N10 FDB047N10 onsemi / Fairchild FAIRS46508-1.pdf?t.download=true&u=5oefqw MOSFETs 100V N-Channel PowerTrench
auf Bestellung 8651 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.08 EUR
10+4.93 EUR
25+4.91 EUR
100+3.68 EUR
800+3.22 EUR
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FDB2532 FDB2532 onsemi / Fairchild FAIRS45678-1.pdf?t.download=true&u=5oefqw MOSFETs 150V N-Channel QFET Trench
auf Bestellung 1178 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.69 EUR
10+5.30 EUR
100+3.85 EUR
250+3.80 EUR
500+3.78 EUR
800+3.43 EUR
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FDMC2523P FDMC2523P onsemi fdmc2523p-d.pdf Description: MOSFET P-CH 150V 3A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 883 Stücke:
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5+3.92 EUR
10+2.52 EUR
100+1.71 EUR
500+1.37 EUR
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FDMC2523P FDMC2523P onsemi / Fairchild fdmc2523p-d.pdf MOSFETs -150V P-Channel QFET
auf Bestellung 18993 Stücke:
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2+2.80 EUR
10+1.97 EUR
100+1.46 EUR
250+1.45 EUR
500+1.25 EUR
1000+1.15 EUR
3000+1.12 EUR
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FDP047N10 FDP047N10 onsemi / Fairchild fdp047n10-d.pdf MOSFETs 100V N-Channel PowerTrench
auf Bestellung 4791 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.64 EUR
10+7.39 EUR
25+4.00 EUR
100+3.71 EUR
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FQA13N50CF FQA13N50CF ONSEMI ONSM-S-A0003590676-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - FQA13N50CF - Leistungs-MOSFET, n-Kanal, 500 V, 15 A, 0.43 ohm, TO-3PN, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 500V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 15A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 218W
Bauform - Transistor: TO-3PN
Anzahl der Pins: 3Pin(s)
Produktpalette: QFET FRFET
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.43ohm
SVHC: No SVHC (15-Jan-2018)
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)
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FQA13N80-F109 FQA13N80-F109 onsemi fqa13n80_f109-d.pdf Description: MOSFET N-CH 800V 12.6A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 6.3A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
auf Bestellung 283 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.23 EUR
30+6.43 EUR
120+5.38 EUR
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FQA140N10 FQA140N10 onsemi / Fairchild fqa140n10-d.pdf MOSFETs 100V N-Channel QFET
auf Bestellung 2183 Stücke:
Lieferzeit 10-14 Tag (e)
1+12.67 EUR
10+12.58 EUR
30+7.46 EUR
120+6.48 EUR
2520+6.12 EUR
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FQA140N10 FQA140N10 onsemi fqa140n10-d.pdf Description: MOSFET N-CH 100V 140A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.34 EUR
30+7.76 EUR
120+6.54 EUR
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FQA40N25 FQA40N25 onsemi / Fairchild fqa40n25-d.pdf MOSFETs 250V N-Channel QFET
auf Bestellung 742 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.87 EUR
10+7.20 EUR
30+4.03 EUR
120+3.61 EUR
270+3.45 EUR
510+3.40 EUR
1020+3.10 EUR
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FQA40N25 FQA40N25 onsemi fqa40n25-d.pdf Description: MOSFET N-CH 250V 40A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
auf Bestellung 375 Stücke:
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3+7.97 EUR
30+4.45 EUR
120+3.67 EUR
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FQA70N10 FQA70N10 ONSEMI FQA70N10.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.21 EUR
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FQA70N10 FQA70N10 onsemi fqa70n10-d.pdf Description: MOSFET N-CH 100V 70A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 35A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 1084 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.44 EUR
30+3.54 EUR
120+2.90 EUR
510+2.43 EUR
1020+2.25 EUR
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FQA70N10 FQA70N10 onsemi / Fairchild fqa70n10-d.pdf MOSFETs 100V N-Channel QFET
auf Bestellung 2551 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.19 EUR
30+2.75 EUR
120+2.45 EUR
270+2.31 EUR
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FQA8N100C FQA8N100C onsemi fqa8n100c-d.pdf Description: MOSFET N-CH 1000V 8A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
auf Bestellung 498 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.45 EUR
30+5.95 EUR
120+4.96 EUR
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FQA8N100C FQA8N100C onsemi / Fairchild fqa8n100c-d.pdf MOSFETs 1000V N-Channe MOSFET
auf Bestellung 11084 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.99 EUR
10+6.86 EUR
30+4.89 EUR
120+4.47 EUR
510+4.42 EUR
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FQB12P20TM FQB12P20TM ONSEMI FQB12P20.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.27A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 770 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.27 EUR
36+2.03 EUR
46+1.59 EUR
48+1.50 EUR
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FQB12P20TM FQB12P20TM onsemi / Fairchild fqb12p20-d.pdf MOSFETs 200V P-Channel QFET
auf Bestellung 22643 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.36 EUR
10+2.87 EUR
25+2.85 EUR
100+2.01 EUR
250+1.97 EUR
800+1.57 EUR
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FQB12P20TM FQB12P20TM onsemi fqb12p20-d.pdf Description: MOSFET P-CH 200V 11.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 5.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.58 EUR
1600+1.47 EUR
2400+1.41 EUR
Mindestbestellmenge: 800
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FQB12P20TM FQB12P20TM onsemi fqb12p20-d.pdf Description: MOSFET P-CH 200V 11.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 5.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 2593 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.66 EUR
10+3.02 EUR
100+2.08 EUR
Mindestbestellmenge: 4
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FQB19N20LTM FQB19N20LTM ONSEMI FQB19N20L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 13.3A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 84A
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.25 EUR
Mindestbestellmenge: 22
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FQB19N20LTM FQB19N20LTM onsemi fqb19n20l-d.pdf Description: MOSFET N-CH 200V 21A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 10.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.31 EUR
1600+1.21 EUR
Mindestbestellmenge: 800
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FQB19N20LTM FQB19N20LTM onsemi fqb19n20l-d.pdf Description: MOSFET N-CH 200V 21A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 10.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 1815 Stücke:
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5+3.94 EUR
10+2.54 EUR
100+1.73 EUR
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FQB19N20LTM FQB19N20LTM onsemi / Fairchild fqb19n20l-d.pdf MOSFETs 200V N-Ch QFET Logic Level
auf Bestellung 30831 Stücke:
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10+2.18 EUR
100+1.54 EUR
800+1.18 EUR
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FQB19N20TM FQB19N20TM onsemi / Fairchild fqb19n20-d.pdf MOSFETs 200V N-Ch QFET Logic Level
auf Bestellung 11924 Stücke:
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1+4.51 EUR
10+3.01 EUR
100+2.13 EUR
800+1.57 EUR
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FQB22P10TM FQB22P10TM ONSEMI FQB22P10.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3927 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.29 EUR
38+1.92 EUR
49+1.49 EUR
52+1.40 EUR
250+1.36 EUR
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FQB22P10TM FQB22P10TM onsemi fqb22p10-d.pdf Description: MOSFET P-CH 100V 22A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 4786 Stücke:
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4+4.61 EUR
10+2.98 EUR
100+2.05 EUR
Mindestbestellmenge: 4
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FQB22P10TM FQB22P10TM onsemi / Fairchild fqb22p10-d.pdf MOSFETs 100V P-Channel QFET
auf Bestellung 54614 Stücke:
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1+4.00 EUR
10+2.64 EUR
100+1.97 EUR
250+1.95 EUR
800+1.43 EUR
2400+1.40 EUR
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FQB22P10TM FQB22P10TM onsemi fqb22p10-d.pdf Description: MOSFET P-CH 100V 22A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.56 EUR
1600+1.45 EUR
2400+1.39 EUR
4000+1.36 EUR
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FQB27P06TM FQB27P06TM onsemi fqb27p06-d.pdf Description: MOSFET P-CH 60V 27A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 3334 Stücke:
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FQB27P06TM FQB27P06TM onsemi / Fairchild fqb27p06-d.pdf MOSFETs 60V P-Channel QFET
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1+4.14 EUR
10+2.94 EUR
25+2.80 EUR
100+2.08 EUR
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FQB27P06TM FQB27P06TM onsemi fqb27p06-d.pdf Description: MOSFET P-CH 60V 27A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 3200 Stücke:
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800+1.59 EUR
1600+1.47 EUR
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FQB34N20LTM FQB34N20LTM onsemi fqb34n20l-d.pdf Description: MOSFET N-CH 200V 31A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 5423 Stücke:
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FQB34N20LTM FQB34N20LTM onsemi fqb34n20l-d.pdf Description: MOSFET N-CH 200V 31A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 4800 Stücke:
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800+3.05 EUR
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FQB34P10TM FQB34P10TM ONSEMI FQB34P10.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.59 EUR
23+3.20 EUR
30+2.46 EUR
31+2.32 EUR
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FQB34P10TM FQB34P10TM onsemi / Fairchild FQB34P10CN-D.pdf MOSFETs 100V P-Channel QFET
auf Bestellung 2294 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.20 EUR
10+4.15 EUR
25+4.14 EUR
100+2.85 EUR
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FQB34P10TM FQB34P10TM onsemi FQB34P10CN-D.pdf Description: MOSFET P-CH 100V 33.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
auf Bestellung 950 Stücke:
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3+6.60 EUR
10+4.34 EUR
100+3.04 EUR
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FQB34P10TM FQB34P10TM onsemi FQB34P10CN-D.pdf Description: MOSFET P-CH 100V 33.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
auf Bestellung 800 Stücke:
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800+2.37 EUR
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FQB44N10TM FQB44N10TM onsemi / Fairchild FAIR-S-A0000097551-1.pdf?t.download=true&u=5oefqw MOSFETs 100V N-Channel QFET
auf Bestellung 1415 Stücke:
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1+4.42 EUR
10+2.99 EUR
100+2.18 EUR
500+1.74 EUR
800+1.71 EUR
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FQB44N10TM FQB44N10TM ONSEMI 2907419.pdf Description: ONSEMI - FQB44N10TM - Leistungs-MOSFET, n-Kanal, 100 V, 43.5 A, 0.03 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 43.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 146W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: QFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.03ohm
SVHC: No SVHC (15-Jan-2018)
auf Bestellung 1035 Stücke:
Lieferzeit 14-21 Tag (e)
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FQB44N10TM FQB44N10TM ONSEMI 2907419.pdf Description: ONSEMI - FQB44N10TM - Leistungs-MOSFET, n-Kanal, 100 V, 43.5 A, 0.03 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 43.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 146W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: QFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.03ohm
SVHC: No SVHC (15-Jan-2018)
auf Bestellung 1035 Stücke:
Lieferzeit 14-21 Tag (e)
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FQB47P06TM-AM002 FQB47P06TM-AM002 ONSEMI FQB47P06.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 740 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.86 EUR
22+3.40 EUR
24+3.05 EUR
25+2.87 EUR
100+2.86 EUR
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FQB47P06TM-AM002 FQB47P06TM-AM002 onsemi fqb47p06-d.pdf Description: MOSFET P-CH 60V 47A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 23.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.89 EUR
Mindestbestellmenge: 800
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FQB47P06TM-AM002 FQB47P06TM-AM002 onsemi fqb47p06-d.pdf Description: MOSFET P-CH 60V 47A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 23.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 1696 Stücke:
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3+7.83 EUR
10+5.18 EUR
100+3.68 EUR
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FQB47P06TM-AM002 FQB47P06TM-AM002 onsemi / Fairchild fqb47p06-d.pdf MOSFETs 60V P-Channel QFET
auf Bestellung 60025 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.09 EUR
10+4.42 EUR
25+4.36 EUR
100+3.31 EUR
500+3.17 EUR
800+2.89 EUR
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FQB4N80TM FQB4N80TM onsemi fqi4n80-d.pdf Description: MOSFET N-CH 800V 3.9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.58 EUR
Mindestbestellmenge: 800
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FQB4N80TM FQB4N80TM onsemi fqi4n80-d.pdf Description: MOSFET N-CH 800V 3.9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 1073 Stücke:
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4+4.93 EUR
10+3.19 EUR
100+2.21 EUR
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FQB55N10TM FQB55N10TM ONSEMI FQB55N10.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.9A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 266 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.79 EUR
39+1.87 EUR
41+1.77 EUR
250+1.70 EUR
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FQB55N10TM FQB55N10TM onsemi ONSM-S-A0003590373-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 55A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 27.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
auf Bestellung 59200 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.78 EUR
1600+1.65 EUR
Mindestbestellmenge: 800
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FQB55N10TM FQB55N10TM onsemi / Fairchild ONSM-S-A0003590373-1.pdf?t.download=true&u=5oefqw MOSFETs 100V N-Channel QFET
auf Bestellung 9222 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.68 EUR
10+3.06 EUR
100+2.09 EUR
250+2.08 EUR
500+1.95 EUR
800+1.70 EUR
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FQB55N10TM FQB55N10TM onsemi ONSM-S-A0003590373-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 55A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 27.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
auf Bestellung 59557 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.14 EUR
10+3.34 EUR
100+2.32 EUR
Mindestbestellmenge: 4
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QFET-3000
auf Bestellung 488 Stücke:
Lieferzeit 21-28 Tag (e)
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QFET-3000-TR1G
auf Bestellung 355 Stücke:
Lieferzeit 21-28 Tag (e)
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QFET-3002-TR1
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Lieferzeit 21-28 Tag (e)
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QFET-3003-TR1
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QFET-3006-TR1
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QFET-3006-TR1G
auf Bestellung 2000 Stücke:
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QFET-3006TR1G
Hersteller: Agilent
0539+
auf Bestellung 3000 Stücke:
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QFET-3006TR1G
Hersteller: Agilent
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
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QFET-3008-TR1
Hersteller: AGILENT
2005 TO23-4
auf Bestellung 3050 Stücke:
Lieferzeit 21-28 Tag (e)
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FDB047N10 FAIRS46508-1.pdf?t.download=true&u=5oefqw
FDB047N10
Hersteller: onsemi / Fairchild
MOSFETs 100V N-Channel PowerTrench
auf Bestellung 8651 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.08 EUR
10+4.93 EUR
25+4.91 EUR
100+3.68 EUR
800+3.22 EUR
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FDB2532 FAIRS45678-1.pdf?t.download=true&u=5oefqw
FDB2532
Hersteller: onsemi / Fairchild
MOSFETs 150V N-Channel QFET Trench
auf Bestellung 1178 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.69 EUR
10+5.30 EUR
100+3.85 EUR
250+3.80 EUR
500+3.78 EUR
800+3.43 EUR
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FDMC2523P fdmc2523p-d.pdf
FDMC2523P
Hersteller: onsemi
Description: MOSFET P-CH 150V 3A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 883 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.92 EUR
10+2.52 EUR
100+1.71 EUR
500+1.37 EUR
Mindestbestellmenge: 5
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FDMC2523P fdmc2523p-d.pdf
FDMC2523P
Hersteller: onsemi / Fairchild
MOSFETs -150V P-Channel QFET
auf Bestellung 18993 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.80 EUR
10+1.97 EUR
100+1.46 EUR
250+1.45 EUR
500+1.25 EUR
1000+1.15 EUR
3000+1.12 EUR
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FDP047N10 fdp047n10-d.pdf
FDP047N10
Hersteller: onsemi / Fairchild
MOSFETs 100V N-Channel PowerTrench
auf Bestellung 4791 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.64 EUR
10+7.39 EUR
25+4.00 EUR
100+3.71 EUR
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FQA13N50CF ONSM-S-A0003590676-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
FQA13N50CF
Hersteller: ONSEMI
Description: ONSEMI - FQA13N50CF - Leistungs-MOSFET, n-Kanal, 500 V, 15 A, 0.43 ohm, TO-3PN, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 500V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 15A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 218W
Bauform - Transistor: TO-3PN
Anzahl der Pins: 3Pin(s)
Produktpalette: QFET FRFET
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.43ohm
SVHC: No SVHC (15-Jan-2018)
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)
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FQA13N80-F109 fqa13n80_f109-d.pdf
FQA13N80-F109
Hersteller: onsemi
Description: MOSFET N-CH 800V 12.6A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 6.3A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
auf Bestellung 283 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.23 EUR
30+6.43 EUR
120+5.38 EUR
Mindestbestellmenge: 2
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FQA140N10 fqa140n10-d.pdf
FQA140N10
Hersteller: onsemi / Fairchild
MOSFETs 100V N-Channel QFET
auf Bestellung 2183 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+12.67 EUR
10+12.58 EUR
30+7.46 EUR
120+6.48 EUR
2520+6.12 EUR
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FQA140N10 fqa140n10-d.pdf
FQA140N10
Hersteller: onsemi
Description: MOSFET N-CH 100V 140A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.34 EUR
30+7.76 EUR
120+6.54 EUR
Mindestbestellmenge: 2
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FQA40N25 fqa40n25-d.pdf
FQA40N25
Hersteller: onsemi / Fairchild
MOSFETs 250V N-Channel QFET
auf Bestellung 742 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.87 EUR
10+7.20 EUR
30+4.03 EUR
120+3.61 EUR
270+3.45 EUR
510+3.40 EUR
1020+3.10 EUR
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FQA40N25 fqa40n25-d.pdf
FQA40N25
Hersteller: onsemi
Description: MOSFET N-CH 250V 40A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
auf Bestellung 375 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.97 EUR
30+4.45 EUR
120+3.67 EUR
Mindestbestellmenge: 3
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FQA70N10 FQA70N10.pdf
FQA70N10
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
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FQA70N10 fqa70n10-d.pdf
FQA70N10
Hersteller: onsemi
Description: MOSFET N-CH 100V 70A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 35A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 1084 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.44 EUR
30+3.54 EUR
120+2.90 EUR
510+2.43 EUR
1020+2.25 EUR
Mindestbestellmenge: 3
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FQA70N10 fqa70n10-d.pdf
FQA70N10
Hersteller: onsemi / Fairchild
MOSFETs 100V N-Channel QFET
auf Bestellung 2551 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.19 EUR
30+2.75 EUR
120+2.45 EUR
270+2.31 EUR
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FQA8N100C fqa8n100c-d.pdf
FQA8N100C
Hersteller: onsemi
Description: MOSFET N-CH 1000V 8A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
auf Bestellung 498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.45 EUR
30+5.95 EUR
120+4.96 EUR
Mindestbestellmenge: 2
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FQA8N100C fqa8n100c-d.pdf
FQA8N100C
Hersteller: onsemi / Fairchild
MOSFETs 1000V N-Channe MOSFET
auf Bestellung 11084 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.99 EUR
10+6.86 EUR
30+4.89 EUR
120+4.47 EUR
510+4.42 EUR
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FQB12P20TM FQB12P20.pdf
FQB12P20TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.27A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 770 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.27 EUR
36+2.03 EUR
46+1.59 EUR
48+1.50 EUR
Mindestbestellmenge: 32
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FQB12P20TM fqb12p20-d.pdf
FQB12P20TM
Hersteller: onsemi / Fairchild
MOSFETs 200V P-Channel QFET
auf Bestellung 22643 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.36 EUR
10+2.87 EUR
25+2.85 EUR
100+2.01 EUR
250+1.97 EUR
800+1.57 EUR
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FQB12P20TM fqb12p20-d.pdf
FQB12P20TM
Hersteller: onsemi
Description: MOSFET P-CH 200V 11.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 5.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.58 EUR
1600+1.47 EUR
2400+1.41 EUR
Mindestbestellmenge: 800
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FQB12P20TM fqb12p20-d.pdf
FQB12P20TM
Hersteller: onsemi
Description: MOSFET P-CH 200V 11.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 5.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 2593 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.66 EUR
10+3.02 EUR
100+2.08 EUR
Mindestbestellmenge: 4
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FQB19N20LTM FQB19N20L.pdf
FQB19N20LTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 13.3A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 84A
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.25 EUR
Mindestbestellmenge: 22
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FQB19N20LTM fqb19n20l-d.pdf
FQB19N20LTM
Hersteller: onsemi
Description: MOSFET N-CH 200V 21A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 10.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.31 EUR
1600+1.21 EUR
Mindestbestellmenge: 800
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FQB19N20LTM fqb19n20l-d.pdf
FQB19N20LTM
Hersteller: onsemi
Description: MOSFET N-CH 200V 21A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 10.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 1815 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.94 EUR
10+2.54 EUR
100+1.73 EUR
Mindestbestellmenge: 5
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FQB19N20LTM fqb19n20l-d.pdf
FQB19N20LTM
Hersteller: onsemi / Fairchild
MOSFETs 200V N-Ch QFET Logic Level
auf Bestellung 30831 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.71 EUR
10+2.18 EUR
100+1.54 EUR
800+1.18 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FQB19N20TM fqb19n20-d.pdf
FQB19N20TM
Hersteller: onsemi / Fairchild
MOSFETs 200V N-Ch QFET Logic Level
auf Bestellung 11924 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.51 EUR
10+3.01 EUR
100+2.13 EUR
800+1.57 EUR
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FQB22P10TM FQB22P10.pdf
FQB22P10TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3927 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.29 EUR
38+1.92 EUR
49+1.49 EUR
52+1.40 EUR
250+1.36 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
FQB22P10TM fqb22p10-d.pdf
FQB22P10TM
Hersteller: onsemi
Description: MOSFET P-CH 100V 22A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 4786 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.61 EUR
10+2.98 EUR
100+2.05 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FQB22P10TM fqb22p10-d.pdf
FQB22P10TM
Hersteller: onsemi / Fairchild
MOSFETs 100V P-Channel QFET
auf Bestellung 54614 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.00 EUR
10+2.64 EUR
100+1.97 EUR
250+1.95 EUR
800+1.43 EUR
2400+1.40 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FQB22P10TM fqb22p10-d.pdf
FQB22P10TM
Hersteller: onsemi
Description: MOSFET P-CH 100V 22A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.56 EUR
1600+1.45 EUR
2400+1.39 EUR
4000+1.36 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
FQB27P06TM fqb27p06-d.pdf
FQB27P06TM
Hersteller: onsemi
Description: MOSFET P-CH 60V 27A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 3334 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.68 EUR
10+3.03 EUR
100+2.08 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FQB27P06TM fqb27p06-d.pdf
FQB27P06TM
Hersteller: onsemi / Fairchild
MOSFETs 60V P-Channel QFET
auf Bestellung 10208 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.14 EUR
10+2.94 EUR
25+2.80 EUR
100+2.08 EUR
800+1.46 EUR
2400+1.43 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FQB27P06TM fqb27p06-d.pdf
FQB27P06TM
Hersteller: onsemi
Description: MOSFET P-CH 60V 27A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.59 EUR
1600+1.47 EUR
2400+1.41 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
FQB34N20LTM fqb34n20l-d.pdf
FQB34N20LTM
Hersteller: onsemi
Description: MOSFET N-CH 200V 31A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 5423 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.43 EUR
10+4.91 EUR
100+3.48 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FQB34N20LTM fqb34n20l-d.pdf
FQB34N20LTM
Hersteller: onsemi
Description: MOSFET N-CH 200V 31A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+3.05 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
FQB34P10TM FQB34P10.pdf
FQB34P10TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.59 EUR
23+3.20 EUR
30+2.46 EUR
31+2.32 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
FQB34P10TM FQB34P10CN-D.pdf
FQB34P10TM
Hersteller: onsemi / Fairchild
MOSFETs 100V P-Channel QFET
auf Bestellung 2294 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.20 EUR
10+4.15 EUR
25+4.14 EUR
100+2.85 EUR
800+2.29 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FQB34P10TM FQB34P10CN-D.pdf
FQB34P10TM
Hersteller: onsemi
Description: MOSFET P-CH 100V 33.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.60 EUR
10+4.34 EUR
100+3.04 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FQB34P10TM FQB34P10CN-D.pdf
FQB34P10TM
Hersteller: onsemi
Description: MOSFET P-CH 100V 33.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.37 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
FQB44N10TM FAIR-S-A0000097551-1.pdf?t.download=true&u=5oefqw
FQB44N10TM
Hersteller: onsemi / Fairchild
MOSFETs 100V N-Channel QFET
auf Bestellung 1415 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.42 EUR
10+2.99 EUR
100+2.18 EUR
500+1.74 EUR
800+1.71 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FQB44N10TM 2907419.pdf
FQB44N10TM
Hersteller: ONSEMI
Description: ONSEMI - FQB44N10TM - Leistungs-MOSFET, n-Kanal, 100 V, 43.5 A, 0.03 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 43.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 146W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: QFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.03ohm
SVHC: No SVHC (15-Jan-2018)
auf Bestellung 1035 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FQB44N10TM 2907419.pdf
FQB44N10TM
Hersteller: ONSEMI
Description: ONSEMI - FQB44N10TM - Leistungs-MOSFET, n-Kanal, 100 V, 43.5 A, 0.03 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 43.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 146W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: QFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.03ohm
SVHC: No SVHC (15-Jan-2018)
auf Bestellung 1035 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FQB47P06TM-AM002 FQB47P06.pdf
FQB47P06TM-AM002
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 740 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.86 EUR
22+3.40 EUR
24+3.05 EUR
25+2.87 EUR
100+2.86 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
FQB47P06TM-AM002 fqb47p06-d.pdf
FQB47P06TM-AM002
Hersteller: onsemi
Description: MOSFET P-CH 60V 47A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 23.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.89 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
FQB47P06TM-AM002 fqb47p06-d.pdf
FQB47P06TM-AM002
Hersteller: onsemi
Description: MOSFET P-CH 60V 47A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 23.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 1696 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.83 EUR
10+5.18 EUR
100+3.68 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FQB47P06TM-AM002 fqb47p06-d.pdf
FQB47P06TM-AM002
Hersteller: onsemi / Fairchild
MOSFETs 60V P-Channel QFET
auf Bestellung 60025 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.09 EUR
10+4.42 EUR
25+4.36 EUR
100+3.31 EUR
500+3.17 EUR
800+2.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FQB4N80TM fqi4n80-d.pdf
FQB4N80TM
Hersteller: onsemi
Description: MOSFET N-CH 800V 3.9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.58 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
FQB4N80TM fqi4n80-d.pdf
FQB4N80TM
Hersteller: onsemi
Description: MOSFET N-CH 800V 3.9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 1073 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.93 EUR
10+3.19 EUR
100+2.21 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FQB55N10TM FQB55N10.pdf
FQB55N10TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.9A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 266 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.79 EUR
39+1.87 EUR
41+1.77 EUR
250+1.70 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
FQB55N10TM ONSM-S-A0003590373-1.pdf?t.download=true&u=5oefqw
FQB55N10TM
Hersteller: onsemi
Description: MOSFET N-CH 100V 55A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 27.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
auf Bestellung 59200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.78 EUR
1600+1.65 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
FQB55N10TM ONSM-S-A0003590373-1.pdf?t.download=true&u=5oefqw
FQB55N10TM
Hersteller: onsemi / Fairchild
MOSFETs 100V N-Channel QFET
auf Bestellung 9222 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.68 EUR
10+3.06 EUR
100+2.09 EUR
250+2.08 EUR
500+1.95 EUR
800+1.70 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FQB55N10TM ONSM-S-A0003590373-1.pdf?t.download=true&u=5oefqw
FQB55N10TM
Hersteller: onsemi
Description: MOSFET N-CH 100V 55A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 27.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
auf Bestellung 59557 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.14 EUR
10+3.34 EUR
100+2.32 EUR
Mindestbestellmenge: 4
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