Suchergebnisse für "QFET" : > 60

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QFET-3000
auf Bestellung 488 Stücke:
Lieferzeit 21-28 Tag (e)
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QFET-3000-TR1G
auf Bestellung 355 Stücke:
Lieferzeit 21-28 Tag (e)
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QFET-3002-TR1
auf Bestellung 170 Stücke:
Lieferzeit 21-28 Tag (e)
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QFET-3003-TR1
auf Bestellung 3081 Stücke:
Lieferzeit 21-28 Tag (e)
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QFET-3006-TR1
auf Bestellung 844 Stücke:
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QFET-3006-TR1G
auf Bestellung 2000 Stücke:
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QFET-3006TR1G Agilent 0539+
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
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QFET-3006TR1G Agilent
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
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QFET-3008-TR1 AGILENT 2005 TO23-4
auf Bestellung 3050 Stücke:
Lieferzeit 21-28 Tag (e)
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FDB047N10 FDB047N10 onsemi / Fairchild FDB047N10-D.pdf MOSFETs 100V N-Channel PowerTrench
auf Bestellung 7301 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.07 EUR
10+3.48 EUR
100+3.26 EUR
500+3.22 EUR
800+3.06 EUR
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FDB2532 FDB2532 onsemi / Fairchild 5C71B921DDFCC5CCD32ECB6539B1867C264D8E91B77B219B9C42194F9FEC2274.pdf MOSFETs 150V N-Channel QFET Trench
auf Bestellung 1969 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.24 EUR
10+4.15 EUR
100+3.41 EUR
800+3.12 EUR
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FDD2670 FDD2670 onsemi / Fairchild FDD2670-D.PDF MOSFETs N-CH 200V 18A Q-FET
auf Bestellung 3068 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.4 EUR
10+2.36 EUR
100+1.72 EUR
500+1.38 EUR
1000+1.26 EUR
2500+1.17 EUR
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FDMC2523P FDMC2523P onsemi / Fairchild FDMC2523P-D.pdf MOSFETs -150V P-Channel QFET
auf Bestellung 11745 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.11 EUR
10+1.71 EUR
100+1.35 EUR
500+1.22 EUR
3000+1.03 EUR
6000+1.02 EUR
Mindestbestellmenge: 2
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FDMC2523P FDMC2523P onsemi fdmc2523p-d.pdf Description: MOSFET P-CH 150V 3A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1 EUR
6000+0.98 EUR
Mindestbestellmenge: 3000
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FDMC2523P FDMC2523P onsemi fdmc2523p-d.pdf Description: MOSFET P-CH 150V 3A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 9701 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.34 EUR
10+1.84 EUR
100+1.43 EUR
500+1.23 EUR
1000+1.19 EUR
Mindestbestellmenge: 8
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FQA13N50CF FQA13N50CF ONSEMI ONSM-S-A0003590676-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - FQA13N50CF - Leistungs-MOSFET, n-Kanal, 500 V, 15 A, 0.48 ohm, TO-3PN, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 500V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 15A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 218W
Bauform - Transistor: TO-3PN
Anzahl der Pins: 3Pin(s)
Produktpalette: QFET FRFET
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.48ohm
SVHC: No SVHC (15-Jan-2018)
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
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FQA140N10 FQA140N10 onsemi / Fairchild FQA140N10-D.PDF MOSFETs 100V N-Channel QFET
auf Bestellung 1422 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.04 EUR
10+6.53 EUR
120+6.11 EUR
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FQA140N10 FQA140N10 onsemi fqa140n10-d.pdf Description: MOSFET N-CH 100V 140A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
auf Bestellung 517 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.05 EUR
30+6.5 EUR
120+6.03 EUR
510+5.59 EUR
Mindestbestellmenge: 2
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FQA24N60 FQA24N60 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E72B1C2DBF5EA&compId=FQA24N60.pdf?ci_sign=2a074290b02bd37525182fc9f1b84824fcffb8ac Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14.9A; 310W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14.9A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Gate charge: 145nC
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.75 EUR
11+6.69 EUR
Mindestbestellmenge: 10
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FQA36P15 FQA36P15 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED78199ED168956E259&compId=FQA36P15.pdf?ci_sign=fa3a3500e7a79aea12f71197ef03a33c5723b741 Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -25.5A
Power dissipation: 294W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 595 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.89 EUR
17+4.4 EUR
19+3.89 EUR
30+3.5 EUR
120+3.3 EUR
Mindestbestellmenge: 15
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FQA36P15 FQA36P15 onsemi fqa36p15-d.pdf Description: MOSFET P-CH 150V 36A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V
auf Bestellung 121 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.6 EUR
30+4.26 EUR
120+3.52 EUR
Mindestbestellmenge: 3
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FQA40N25 FQA40N25 onsemi fqa40n25-d.pdf Description: MOSFET N-CH 250V 40A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
auf Bestellung 174 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.71 EUR
30+3.56 EUR
120+3.36 EUR
Mindestbestellmenge: 3
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FQA70N10 FQA70N10 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED78199358C0F874259&compId=FQA70N10.pdf?ci_sign=349cba8499ef084419a1f1bc51a1bbbeffb3987e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.13 EUR
27+2.7 EUR
29+2.52 EUR
30+2.46 EUR
Mindestbestellmenge: 23
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FQA70N10 FQA70N10 onsemi fqa70n10-d.pdf Description: MOSFET N-CH 100V 70A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 35A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 1594 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.9 EUR
30+2.32 EUR
120+2.28 EUR
510+2.24 EUR
1020+2.08 EUR
Mindestbestellmenge: 7
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FQA8N100C FQA8N100C onsemi / Fairchild FQA8N100C-D.PDF MOSFETs 1000V N-Channe MOSFET
auf Bestellung 10916 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.14 EUR
10+4.01 EUR
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FQB12P20TM FQB12P20TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781993819E80FA259&compId=FQB12P20.pdf?ci_sign=e4b7da49993bbed81afc4e6d3aff2890ea636542 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.27A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.79 EUR
32+2.26 EUR
36+2 EUR
43+1.69 EUR
50+1.49 EUR
100+1.43 EUR
Mindestbestellmenge: 26
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FQB19N20LTM FQB19N20LTM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781972AB2675AE259&compId=FQB19N20L.pdf?ci_sign=09ce8e6d8a0c9a5c2f4d1d2174e061d2874c3dca Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 13.3A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 84A
auf Bestellung 670 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.76 EUR
46+1.59 EUR
49+1.47 EUR
55+1.3 EUR
100+1.22 EUR
Mindestbestellmenge: 41
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FQB19N20LTM FQB19N20LTM onsemi / Fairchild FQB19N20L-D.pdf MOSFETs 200V N-Ch QFET Logic Level
auf Bestellung 26378 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.62 EUR
10+2.13 EUR
100+1.48 EUR
500+1.37 EUR
800+1.18 EUR
Mindestbestellmenge: 2
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FQB19N20LTM FQB19N20LTM onsemi fqb19n20l-d.pdf Description: MOSFET N-CH 200V 21A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 10.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.2 EUR
Mindestbestellmenge: 800
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FQB19N20LTM FQB19N20LTM onsemi fqb19n20l-d.pdf Description: MOSFET N-CH 200V 21A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 10.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 1139 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.62 EUR
10+2.14 EUR
100+1.51 EUR
Mindestbestellmenge: 7
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FQB19N20TM FQB19N20TM onsemi / Fairchild FQB19N20-D.pdf MOSFETs 200V N-Ch QFET Logic Level
auf Bestellung 11843 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.38 EUR
10+2.92 EUR
100+2.01 EUR
500+1.92 EUR
800+1.57 EUR
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FQB22P10TM FQB22P10TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781993E171FE62259&compId=FQB22P10.pdf?ci_sign=c011f76bcc2f36e15730ec28e82a1ae0a73e12f1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3820 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.42 EUR
39+1.84 EUR
45+1.62 EUR
50+1.44 EUR
100+1.34 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
FQB22P10TM FQB22P10TM onsemi fqb22p10-d.pdf Description: MOSFET P-CH 100V 22A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 2654 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.08 EUR
10+2.67 EUR
100+1.83 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
FQB22P10TM FQB22P10TM onsemi / Fairchild FQB22P10-D.pdf MOSFETs 100V P-Channel QFET
auf Bestellung 22711 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.94 EUR
10+2.68 EUR
100+1.85 EUR
800+1.4 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FQB22P10TM FQB22P10TM onsemi fqb22p10-d.pdf Description: MOSFET P-CH 100V 22A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 2400 Stücke:
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800+1.4 EUR
1600+1.32 EUR
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FQB27P06TM FQB27P06TM onsemi fqb27p06-d.pdf Description: MOSFET P-CH 60V 27A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 107 Stücke:
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5+3.59 EUR
10+2.34 EUR
100+1.87 EUR
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FQB27P06TM FQB27P06TM onsemi / Fairchild FQB27P06-D.pdf MOSFETs 60V P-Channel QFET
auf Bestellung 5914 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.5 EUR
10+2.22 EUR
100+1.88 EUR
500+1.85 EUR
800+1.35 EUR
2400+1.3 EUR
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FQB34N20LTM FQB34N20LTM onsemi fqb34n20l-d.pdf Description: MOSFET N-CH 200V 31A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 4687 Stücke:
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10+4.54 EUR
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FQB34N20LTM FQB34N20LTM onsemi fqb34n20l-d.pdf Description: MOSFET N-CH 200V 31A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 4000 Stücke:
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800+2.74 EUR
1600+2.43 EUR
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FQB34P10TM FQB34P10TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED78199444AE17E0259&compId=FQB34P10.pdf?ci_sign=c7feb36dc8b0700525fc1518e9be080d7ee8f5a4 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 448 Stücke:
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FQB34P10TM FQB34P10TM onsemi / Fairchild FQB34P10-D.pdf MOSFETs 100V P-Channel QFET
auf Bestellung 2794 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.79 EUR
10+3.26 EUR
100+2.66 EUR
500+2.62 EUR
800+2.29 EUR
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FQB34P10TM FQB34P10TM onsemi FQB34P10CN-D.pdf Description: MOSFET P-CH 100V 33.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
auf Bestellung 8242 Stücke:
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10+3.31 EUR
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FQB34P10TM FQB34P10TM onsemi FQB34P10CN-D.pdf Description: MOSFET P-CH 100V 33.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
auf Bestellung 8000 Stücke:
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800+2.08 EUR
1600+1.99 EUR
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FQB44N10TM FQB44N10TM onsemi FQB44N10-D.pdf Description: MOSFET N-CH 100V 43.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 20262 Stücke:
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10+3.1 EUR
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FQB44N10TM FQB44N10TM onsemi FQB44N10-D.pdf Description: MOSFET N-CH 100V 43.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.65 EUR
1600+1.54 EUR
2400+1.48 EUR
Mindestbestellmenge: 800
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FQB44N10TM FQB44N10TM ONSEMI 2907419.pdf Description: ONSEMI - FQB44N10TM - Leistungs-MOSFET, n-Kanal, 100 V, 43.5 A, 0.03 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 43.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 146W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: QFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.03ohm
SVHC: Lead (27-Jun-2024)
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
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FQB44N10TM FQB44N10TM ONSEMI 2907419.pdf Description: ONSEMI - FQB44N10TM - Leistungs-MOSFET, n-Kanal, 100 V, 43.5 A, 0.03 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 43.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 146W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: QFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.03ohm
SVHC: Lead (27-Jun-2024)
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
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FQB47P06TM-AM002 FQB47P06TM-AM002 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED78199497D63C9C259&compId=FQB47P06.pdf?ci_sign=7c37740ed8751f7c5f80a7514a0667d6458ca3bd Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 735 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.78 EUR
25+2.92 EUR
27+2.73 EUR
Mindestbestellmenge: 19
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FQB47P06TM-AM002 FQB47P06TM-AM002 onsemi fqb47p06-d.pdf Description: MOSFET P-CH 60V 47A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 23.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 656 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.67 EUR
10+4.36 EUR
100+3.25 EUR
Mindestbestellmenge: 4
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FQB47P06TM-AM002 FQB47P06TM-AM002 onsemi / Fairchild FQB47P06-D.PDF MOSFETs 60V P-Channel QFET
auf Bestellung 53938 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.42 EUR
10+4.17 EUR
100+3.1 EUR
500+2.96 EUR
800+2.6 EUR
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FQB4N80TM FQB4N80TM onsemi / Fairchild 97B1B4037C5B80B870EBB4FF748F328217CCD45148863D9C96C10ED542E0363C.pdf MOSFETs 800V N-Channel QFET
auf Bestellung 1549 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.6 EUR
10+2.09 EUR
100+1.74 EUR
500+1.66 EUR
800+1.45 EUR
Mindestbestellmenge: 2
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FQB55N10TM FQB55N10TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781973901FEFE0259&compId=FQB55N10.pdf?ci_sign=0b94fdec42ad125a870ffe3441fc2fd20d9bfa7b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.9A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.3 EUR
36+2 EUR
39+1.84 EUR
43+1.69 EUR
Mindestbestellmenge: 32
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FQB55N10TM FQB55N10TM onsemi / Fairchild FQB55N10-D.pdf MOSFETs 100V N-Channel QFET
auf Bestellung 4446 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.6 EUR
10+2.11 EUR
100+1.81 EUR
500+1.76 EUR
800+1.69 EUR
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FQB55N10TM FQB55N10TM onsemi FQB55N10-D.pdf Description: MOSFET N-CH 100V 55A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 27.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
auf Bestellung 1278 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.59 EUR
10+2.11 EUR
100+1.81 EUR
Mindestbestellmenge: 7
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FQB55N10TM FQB55N10TM onsemi FQB55N10-D.pdf Description: MOSFET N-CH 100V 55A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 27.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
auf Bestellung 800 Stücke:
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800+1.62 EUR
Mindestbestellmenge: 800
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FQB55N10TM FQB55N10TM ONSEMI 2572544.pdf Description: ONSEMI - FQB55N10TM - Leistungs-MOSFET, n-Kanal, 100 V, 55 A, 0.026 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 55A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 155W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: QFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.026ohm
SVHC: Lead (27-Jun-2024)
auf Bestellung 633 Stücke:
Lieferzeit 14-21 Tag (e)
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FQB55N10TM FQB55N10TM ONSEMI 2572544.pdf Description: ONSEMI - FQB55N10TM - Leistungs-MOSFET, n-Kanal, 100 V, 55 A, 0.026 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 55A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 155W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: QFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.026ohm
SVHC: Lead (27-Jun-2024)
auf Bestellung 633 Stücke:
Lieferzeit 14-21 Tag (e)
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FQB5N90TM FQB5N90TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED78197409012D40259&compId=FQB5N90.pdf?ci_sign=794e2f9b0f6a0883154a97fda2c236ae9e6d9415 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.42A
Power dissipation: 158W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 725 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.37 EUR
33+2.19 EUR
Mindestbestellmenge: 31
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FQB5N90TM FQB5N90TM onsemi / Fairchild FQB5N90-D.PDF MOSFETs 900V N-Channel QFET
auf Bestellung 13320 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.43 EUR
10+3.24 EUR
100+2.6 EUR
500+2.48 EUR
800+2.15 EUR
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FQD11P06TM FQD11P06TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781994C4589FE2259&compId=FQD11P06.pdf?ci_sign=ee27c1aa84725a3bbb6670661b3207ae67af2f59 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.95A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2710 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.56 EUR
60+1.21 EUR
67+1.08 EUR
87+0.83 EUR
100+0.75 EUR
250+0.69 EUR
Mindestbestellmenge: 46
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QFET-3000
auf Bestellung 488 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
QFET-3000-TR1G
auf Bestellung 355 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
QFET-3002-TR1
auf Bestellung 170 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
QFET-3003-TR1
auf Bestellung 3081 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
QFET-3006-TR1
auf Bestellung 844 Stücke:
Lieferzeit 21-28 Tag (e)
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QFET-3006-TR1G
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
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QFET-3006TR1G
Hersteller: Agilent
0539+
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
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QFET-3006TR1G
Hersteller: Agilent
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
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QFET-3008-TR1
Hersteller: AGILENT
2005 TO23-4
auf Bestellung 3050 Stücke:
Lieferzeit 21-28 Tag (e)
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FDB047N10 FDB047N10-D.pdf
FDB047N10
Hersteller: onsemi / Fairchild
MOSFETs 100V N-Channel PowerTrench
auf Bestellung 7301 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.07 EUR
10+3.48 EUR
100+3.26 EUR
500+3.22 EUR
800+3.06 EUR
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FDB2532 5C71B921DDFCC5CCD32ECB6539B1867C264D8E91B77B219B9C42194F9FEC2274.pdf
FDB2532
Hersteller: onsemi / Fairchild
MOSFETs 150V N-Channel QFET Trench
auf Bestellung 1969 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.24 EUR
10+4.15 EUR
100+3.41 EUR
800+3.12 EUR
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FDD2670 FDD2670-D.PDF
FDD2670
Hersteller: onsemi / Fairchild
MOSFETs N-CH 200V 18A Q-FET
auf Bestellung 3068 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.4 EUR
10+2.36 EUR
100+1.72 EUR
500+1.38 EUR
1000+1.26 EUR
2500+1.17 EUR
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FDMC2523P FDMC2523P-D.pdf
FDMC2523P
Hersteller: onsemi / Fairchild
MOSFETs -150V P-Channel QFET
auf Bestellung 11745 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.11 EUR
10+1.71 EUR
100+1.35 EUR
500+1.22 EUR
3000+1.03 EUR
6000+1.02 EUR
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FDMC2523P fdmc2523p-d.pdf
FDMC2523P
Hersteller: onsemi
Description: MOSFET P-CH 150V 3A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1 EUR
6000+0.98 EUR
Mindestbestellmenge: 3000
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FDMC2523P fdmc2523p-d.pdf
FDMC2523P
Hersteller: onsemi
Description: MOSFET P-CH 150V 3A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 9701 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.34 EUR
10+1.84 EUR
100+1.43 EUR
500+1.23 EUR
1000+1.19 EUR
Mindestbestellmenge: 8
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FQA13N50CF ONSM-S-A0003590676-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
FQA13N50CF
Hersteller: ONSEMI
Description: ONSEMI - FQA13N50CF - Leistungs-MOSFET, n-Kanal, 500 V, 15 A, 0.48 ohm, TO-3PN, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 500V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 15A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 218W
Bauform - Transistor: TO-3PN
Anzahl der Pins: 3Pin(s)
Produktpalette: QFET FRFET
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.48ohm
SVHC: No SVHC (15-Jan-2018)
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
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FQA140N10 FQA140N10-D.PDF
FQA140N10
Hersteller: onsemi / Fairchild
MOSFETs 100V N-Channel QFET
auf Bestellung 1422 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+11.04 EUR
10+6.53 EUR
120+6.11 EUR
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FQA140N10 fqa140n10-d.pdf
FQA140N10
Hersteller: onsemi
Description: MOSFET N-CH 100V 140A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
auf Bestellung 517 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.05 EUR
30+6.5 EUR
120+6.03 EUR
510+5.59 EUR
Mindestbestellmenge: 2
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FQA24N60 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E72B1C2DBF5EA&compId=FQA24N60.pdf?ci_sign=2a074290b02bd37525182fc9f1b84824fcffb8ac
FQA24N60
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14.9A; 310W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14.9A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Gate charge: 145nC
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.75 EUR
11+6.69 EUR
Mindestbestellmenge: 10
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FQA36P15 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78199ED168956E259&compId=FQA36P15.pdf?ci_sign=fa3a3500e7a79aea12f71197ef03a33c5723b741
FQA36P15
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -25.5A
Power dissipation: 294W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 595 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.89 EUR
17+4.4 EUR
19+3.89 EUR
30+3.5 EUR
120+3.3 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
FQA36P15 fqa36p15-d.pdf
FQA36P15
Hersteller: onsemi
Description: MOSFET P-CH 150V 36A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V
auf Bestellung 121 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.6 EUR
30+4.26 EUR
120+3.52 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FQA40N25 fqa40n25-d.pdf
FQA40N25
Hersteller: onsemi
Description: MOSFET N-CH 250V 40A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
auf Bestellung 174 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.71 EUR
30+3.56 EUR
120+3.36 EUR
Mindestbestellmenge: 3
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FQA70N10 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78199358C0F874259&compId=FQA70N10.pdf?ci_sign=349cba8499ef084419a1f1bc51a1bbbeffb3987e
FQA70N10
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.13 EUR
27+2.7 EUR
29+2.52 EUR
30+2.46 EUR
Mindestbestellmenge: 23
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FQA70N10 fqa70n10-d.pdf
FQA70N10
Hersteller: onsemi
Description: MOSFET N-CH 100V 70A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 35A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 1594 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.9 EUR
30+2.32 EUR
120+2.28 EUR
510+2.24 EUR
1020+2.08 EUR
Mindestbestellmenge: 7
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FQA8N100C FQA8N100C-D.PDF
FQA8N100C
Hersteller: onsemi / Fairchild
MOSFETs 1000V N-Channe MOSFET
auf Bestellung 10916 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.14 EUR
10+4.01 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FQB12P20TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED781993819E80FA259&compId=FQB12P20.pdf?ci_sign=e4b7da49993bbed81afc4e6d3aff2890ea636542
FQB12P20TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.27A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.79 EUR
32+2.26 EUR
36+2 EUR
43+1.69 EUR
50+1.49 EUR
100+1.43 EUR
Mindestbestellmenge: 26
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FQB19N20LTM pVersion=0046&contRep=ZT&docId=005056AB752F1ED781972AB2675AE259&compId=FQB19N20L.pdf?ci_sign=09ce8e6d8a0c9a5c2f4d1d2174e061d2874c3dca
FQB19N20LTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 13.3A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 84A
auf Bestellung 670 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.76 EUR
46+1.59 EUR
49+1.47 EUR
55+1.3 EUR
100+1.22 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
FQB19N20LTM FQB19N20L-D.pdf
FQB19N20LTM
Hersteller: onsemi / Fairchild
MOSFETs 200V N-Ch QFET Logic Level
auf Bestellung 26378 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.62 EUR
10+2.13 EUR
100+1.48 EUR
500+1.37 EUR
800+1.18 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FQB19N20LTM fqb19n20l-d.pdf
FQB19N20LTM
Hersteller: onsemi
Description: MOSFET N-CH 200V 21A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 10.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.2 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
FQB19N20LTM fqb19n20l-d.pdf
FQB19N20LTM
Hersteller: onsemi
Description: MOSFET N-CH 200V 21A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 10.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 1139 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.62 EUR
10+2.14 EUR
100+1.51 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
FQB19N20TM FQB19N20-D.pdf
FQB19N20TM
Hersteller: onsemi / Fairchild
MOSFETs 200V N-Ch QFET Logic Level
auf Bestellung 11843 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.38 EUR
10+2.92 EUR
100+2.01 EUR
500+1.92 EUR
800+1.57 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FQB22P10TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED781993E171FE62259&compId=FQB22P10.pdf?ci_sign=c011f76bcc2f36e15730ec28e82a1ae0a73e12f1
FQB22P10TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3820 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.42 EUR
39+1.84 EUR
45+1.62 EUR
50+1.44 EUR
100+1.34 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
FQB22P10TM fqb22p10-d.pdf
FQB22P10TM
Hersteller: onsemi
Description: MOSFET P-CH 100V 22A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 2654 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.08 EUR
10+2.67 EUR
100+1.83 EUR
Mindestbestellmenge: 5
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FQB22P10TM FQB22P10-D.pdf
FQB22P10TM
Hersteller: onsemi / Fairchild
MOSFETs 100V P-Channel QFET
auf Bestellung 22711 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.94 EUR
10+2.68 EUR
100+1.85 EUR
800+1.4 EUR
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FQB22P10TM fqb22p10-d.pdf
FQB22P10TM
Hersteller: onsemi
Description: MOSFET P-CH 100V 22A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.4 EUR
1600+1.32 EUR
Mindestbestellmenge: 800
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FQB27P06TM fqb27p06-d.pdf
FQB27P06TM
Hersteller: onsemi
Description: MOSFET P-CH 60V 27A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.59 EUR
10+2.34 EUR
100+1.87 EUR
Mindestbestellmenge: 5
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FQB27P06TM FQB27P06-D.pdf
FQB27P06TM
Hersteller: onsemi / Fairchild
MOSFETs 60V P-Channel QFET
auf Bestellung 5914 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.5 EUR
10+2.22 EUR
100+1.88 EUR
500+1.85 EUR
800+1.35 EUR
2400+1.3 EUR
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FQB34N20LTM fqb34n20l-d.pdf
FQB34N20LTM
Hersteller: onsemi
Description: MOSFET N-CH 200V 31A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 4687 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.78 EUR
10+4.54 EUR
100+3.21 EUR
Mindestbestellmenge: 3
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FQB34N20LTM fqb34n20l-d.pdf
FQB34N20LTM
Hersteller: onsemi
Description: MOSFET N-CH 200V 31A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.74 EUR
1600+2.43 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
FQB34P10TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED78199444AE17E0259&compId=FQB34P10.pdf?ci_sign=c7feb36dc8b0700525fc1518e9be080d7ee8f5a4
FQB34P10TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 448 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.36 EUR
33+2.23 EUR
Mindestbestellmenge: 22
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FQB34P10TM FQB34P10-D.pdf
FQB34P10TM
Hersteller: onsemi / Fairchild
MOSFETs 100V P-Channel QFET
auf Bestellung 2794 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.79 EUR
10+3.26 EUR
100+2.66 EUR
500+2.62 EUR
800+2.29 EUR
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FQB34P10TM FQB34P10CN-D.pdf
FQB34P10TM
Hersteller: onsemi
Description: MOSFET P-CH 100V 33.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
auf Bestellung 8242 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.98 EUR
10+3.31 EUR
100+2.69 EUR
Mindestbestellmenge: 4
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FQB34P10TM FQB34P10CN-D.pdf
FQB34P10TM
Hersteller: onsemi
Description: MOSFET P-CH 100V 33.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.08 EUR
1600+1.99 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
FQB44N10TM FQB44N10-D.pdf
FQB44N10TM
Hersteller: onsemi
Description: MOSFET N-CH 100V 43.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 20262 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.77 EUR
10+3.1 EUR
100+2.15 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FQB44N10TM FQB44N10-D.pdf
FQB44N10TM
Hersteller: onsemi
Description: MOSFET N-CH 100V 43.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.65 EUR
1600+1.54 EUR
2400+1.48 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
FQB44N10TM 2907419.pdf
FQB44N10TM
Hersteller: ONSEMI
Description: ONSEMI - FQB44N10TM - Leistungs-MOSFET, n-Kanal, 100 V, 43.5 A, 0.03 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 43.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 146W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: QFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.03ohm
SVHC: Lead (27-Jun-2024)
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FQB44N10TM 2907419.pdf
FQB44N10TM
Hersteller: ONSEMI
Description: ONSEMI - FQB44N10TM - Leistungs-MOSFET, n-Kanal, 100 V, 43.5 A, 0.03 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 43.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 146W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: QFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.03ohm
SVHC: Lead (27-Jun-2024)
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FQB47P06TM-AM002 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78199497D63C9C259&compId=FQB47P06.pdf?ci_sign=7c37740ed8751f7c5f80a7514a0667d6458ca3bd
FQB47P06TM-AM002
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 735 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.78 EUR
25+2.92 EUR
27+2.73 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
FQB47P06TM-AM002 fqb47p06-d.pdf
FQB47P06TM-AM002
Hersteller: onsemi
Description: MOSFET P-CH 60V 47A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 23.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 656 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.67 EUR
10+4.36 EUR
100+3.25 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FQB47P06TM-AM002 FQB47P06-D.PDF
FQB47P06TM-AM002
Hersteller: onsemi / Fairchild
MOSFETs 60V P-Channel QFET
auf Bestellung 53938 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.42 EUR
10+4.17 EUR
100+3.1 EUR
500+2.96 EUR
800+2.6 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FQB4N80TM 97B1B4037C5B80B870EBB4FF748F328217CCD45148863D9C96C10ED542E0363C.pdf
FQB4N80TM
Hersteller: onsemi / Fairchild
MOSFETs 800V N-Channel QFET
auf Bestellung 1549 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.6 EUR
10+2.09 EUR
100+1.74 EUR
500+1.66 EUR
800+1.45 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FQB55N10TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED781973901FEFE0259&compId=FQB55N10.pdf?ci_sign=0b94fdec42ad125a870ffe3441fc2fd20d9bfa7b
FQB55N10TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.9A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.3 EUR
36+2 EUR
39+1.84 EUR
43+1.69 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
FQB55N10TM FQB55N10-D.pdf
FQB55N10TM
Hersteller: onsemi / Fairchild
MOSFETs 100V N-Channel QFET
auf Bestellung 4446 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.6 EUR
10+2.11 EUR
100+1.81 EUR
500+1.76 EUR
800+1.69 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FQB55N10TM FQB55N10-D.pdf
FQB55N10TM
Hersteller: onsemi
Description: MOSFET N-CH 100V 55A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 27.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
auf Bestellung 1278 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
10+2.11 EUR
100+1.81 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
FQB55N10TM FQB55N10-D.pdf
FQB55N10TM
Hersteller: onsemi
Description: MOSFET N-CH 100V 55A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 27.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.62 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
FQB55N10TM 2572544.pdf
FQB55N10TM
Hersteller: ONSEMI
Description: ONSEMI - FQB55N10TM - Leistungs-MOSFET, n-Kanal, 100 V, 55 A, 0.026 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 55A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 155W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: QFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.026ohm
SVHC: Lead (27-Jun-2024)
auf Bestellung 633 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FQB55N10TM 2572544.pdf
FQB55N10TM
Hersteller: ONSEMI
Description: ONSEMI - FQB55N10TM - Leistungs-MOSFET, n-Kanal, 100 V, 55 A, 0.026 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 55A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 155W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: QFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.026ohm
SVHC: Lead (27-Jun-2024)
auf Bestellung 633 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FQB5N90TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED78197409012D40259&compId=FQB5N90.pdf?ci_sign=794e2f9b0f6a0883154a97fda2c236ae9e6d9415
FQB5N90TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.42A
Power dissipation: 158W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 725 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.37 EUR
33+2.19 EUR
Mindestbestellmenge: 31
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FQB5N90TM FQB5N90-D.PDF
FQB5N90TM
Hersteller: onsemi / Fairchild
MOSFETs 900V N-Channel QFET
auf Bestellung 13320 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.43 EUR
10+3.24 EUR
100+2.6 EUR
500+2.48 EUR
800+2.15 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FQD11P06TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED781994C4589FE2259&compId=FQD11P06.pdf?ci_sign=ee27c1aa84725a3bbb6670661b3207ae67af2f59
FQD11P06TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.95A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2710 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.56 EUR
60+1.21 EUR
67+1.08 EUR
87+0.83 EUR
100+0.75 EUR
250+0.69 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
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