Suchergebnisse für "k15a60" : 7
Art der Ansicht :
Im Einkaufswagen
Stück im Wert von UAH
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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TK15A60D(STA4,Q,M) | Toshiba |
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auf Bestellung 137 Stücke: Lieferzeit 10-14 Tag (e) |
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TK15A60U |
auf Bestellung 1650 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BEZPIECZNIK 15A/600V | BRYMEN |
Category: Accessories - Others Description: Fuse; 15A; 600V; 10x38mm Type of test accessories: fuse Related items: BM252S; BM257; BM257S; BM827; BM829 Current rating: 15A Rated voltage: 600V Dimensions: 10x38mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BEZPIECZNIK 15A/600V | BRYMEN |
Category: Accessories - Others Description: Fuse; 15A; 600V; 10x38mm Type of test accessories: fuse Related items: BM252S; BM257; BM257S; BM827; BM829 Current rating: 15A Rated voltage: 600V Dimensions: 10x38mm Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TK15A60D(STA4,Q,M) | Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 370mOhm @ 7.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TK15A60U(STA4,Q,M) | Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220SIS Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
TK15A60D(STA4,Q,M) |
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Hersteller: Toshiba
MOSFETs N-Ch MOS 15A 600V 50W 2600pF 0.37
MOSFETs N-Ch MOS 15A 600V 50W 2600pF 0.37
auf Bestellung 137 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 3.73 EUR |
10+ | 3.10 EUR |
25+ | 2.99 EUR |
50+ | 2.53 EUR |
100+ | 2.25 EUR |
250+ | 2.11 EUR |
500+ | 1.83 EUR |
BEZPIECZNIK 15A/600V |
Hersteller: BRYMEN
Category: Accessories - Others
Description: Fuse; 15A; 600V; 10x38mm
Type of test accessories: fuse
Related items: BM252S; BM257; BM257S; BM827; BM829
Current rating: 15A
Rated voltage: 600V
Dimensions: 10x38mm
Category: Accessories - Others
Description: Fuse; 15A; 600V; 10x38mm
Type of test accessories: fuse
Related items: BM252S; BM257; BM257S; BM827; BM829
Current rating: 15A
Rated voltage: 600V
Dimensions: 10x38mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BEZPIECZNIK 15A/600V |
Hersteller: BRYMEN
Category: Accessories - Others
Description: Fuse; 15A; 600V; 10x38mm
Type of test accessories: fuse
Related items: BM252S; BM257; BM257S; BM827; BM829
Current rating: 15A
Rated voltage: 600V
Dimensions: 10x38mm
Anzahl je Verpackung: 1 Stücke
Category: Accessories - Others
Description: Fuse; 15A; 600V; 10x38mm
Type of test accessories: fuse
Related items: BM252S; BM257; BM257S; BM827; BM829
Current rating: 15A
Rated voltage: 600V
Dimensions: 10x38mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TK15A60D(STA4,Q,M) |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 7.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 600V 15A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 7.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TK15A60U(STA4,Q,M) |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
Description: MOSFET N-CH 600V 15A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH