Produkte > SMC DIODE SOLUTIONS > Alle Produkte des Herstellers SMC DIODE SOLUTIONS (9760) > Seite 163 nach 163
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15CTQ045STR | SMC DIODE SOLUTIONS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 15A Semiconductor structure: common cathode; double Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 180A Leakage current: 1mA Max. forward voltage: 0.84V Capacitance: 400pF |
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25CTQ045STR | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 30A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 30A Semiconductor structure: common cathode; double Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 0.3kA Leakage current: 1mA Max. forward voltage: 0.71V Capacitance: 900pF |
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SDURB1530TR | SMC DIODE SOLUTIONS |
![]() Description: Diode: rectifying; SMD; 300V; 15A; 45ns; D2PAK; Ufmax: 1.26V; Ir: 10uA Type of diode: rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 300V Load current: 15A Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 1.26V Reverse recovery time: 45ns Leakage current: 10µA Features of semiconductor devices: ultrafast switching |
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SDURB1530CTTR | SMC DIODE SOLUTIONS |
![]() Description: Diode: rectifying; SMD; 300V; 8Ax2; 45ns; D2PAK; Ufmax: 1.3V; Ir: 10uA Type of diode: rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 300V Load current: 8A x2 Semiconductor structure: common cathode; double Kind of package: reel; tape Max. load current: 15A Max. forward voltage: 1.3V Reverse recovery time: 45ns Leakage current: 10µA Features of semiconductor devices: ultrafast switching |
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SMAJ20ATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.4kW; 222÷24.5V; 12.3A; unidirectional; SMA; reel; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20V Breakdown voltage: 222...24.5V Max. forward impulse current: 12.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel Manufacturer series: SMAJ Leakage current: 5µA |
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MBRD660CTTR | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 6A; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 60V Load current: 6A Semiconductor structure: common cathode; double Kind of package: reel; tape Leakage current: 0.1mA Max. forward impulse current: 75A Max. forward voltage: 0.9V Capacitance: 200pF |
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123NQ100-1 | SMC DIODE SOLUTIONS |
Category: Diode modules Description: Single diode; 100V; If: 120A; PRM1-1; Ifsm: 2.52kA; screw; screw Max. off-state voltage: 100V Load current: 120A Max. forward impulse current: 2.52kA Case: PRM1-1 Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw Features of semiconductor devices: Schottky Type of semiconductor module: diode Semiconductor structure: single diode |
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123NQ100R-1 | SMC DIODE SOLUTIONS |
Category: Diode modules Description: Single diode; 100V; If: 120A; PRM1-1; Ifsm: 2.52kA; screw; screw Max. off-state voltage: 100V Load current: 120A Max. forward impulse current: 2.52kA Case: PRM1-1 Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw Features of semiconductor devices: Schottky Type of semiconductor module: diode Semiconductor structure: single diode |
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P6KE51CATA | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 48.5÷53.6V; 8.7A; bidirectional; DO15; 0.6kW; tape; P6KE Type of diode: TVS Max. off-state voltage: 43.6V Breakdown voltage: 48.5...53.6V Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 5µA Peak pulse power dissipation: 0.6kW Kind of package: tape Manufacturer series: P6KE Max. forward impulse current: 8.7A |
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S3D04065A | SMC DIODE SOLUTIONS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 2.2V Case: TO220AC Max. off-state voltage: 650V Max. load current: 15A Max. forward voltage: 2.2V Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 30A Power dissipation: 39W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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S3D04065F | SMC DIODE SOLUTIONS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; 39W; tube Case: ITO220AC Max. off-state voltage: 650V Max. load current: 15A Max. forward voltage: 2.2V Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 30A Power dissipation: 39W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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S3D04065E | SMC DIODE SOLUTIONS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape; 39W Case: DPAK Max. off-state voltage: 650V Max. forward voltage: 2.2V Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 30A Power dissipation: 39W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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P4SMF36A | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.4kW; 40÷36.8V; 6.9A; unidirectional; SOD123F; reel Type of diode: TVS Peak pulse power dissipation: 0.4kW Semiconductor structure: unidirectional Case: SOD123F Mounting: SMD Kind of package: reel Manufacturer series: P4SMF Max. off-state voltage: 36V Max. forward impulse current: 6.9A Breakdown voltage: 40...36.8V Leakage current: 1µA |
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S2M0025120J | SMC DIODE SOLUTIONS |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; Idm: 250A; 311W Drain-source voltage: 1.2kV Drain current: 70A On-state resistance: 25mΩ Type of transistor: N-MOSFET Power dissipation: 311W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: Kelvin terminal Gate charge: 177nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...20V Pulsed drain current: 250A Mounting: SMD Case: TO263-7 |
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S3M0016120B | SMC DIODE SOLUTIONS |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 75A; Idm: 250A; 576W Kind of package: tube Drain current: 75A On-state resistance: 25mΩ Type of transistor: N-MOSFET Power dissipation: 576W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 287nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 250A Mounting: SMD Case: T2PAK Drain-source voltage: 1.2kV |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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S3D20065A | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube Case: TO220AC Mounting: THT Kind of package: tube Max. forward voltage: 2.4V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 160A Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V |
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S3D20065C | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO220AB; tube Case: TO220AB Mounting: THT Kind of package: tube Max. load current: 20A Max. forward voltage: 2.4V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 102A Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V |
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S3D20065GTR | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. forward voltage: 2.4V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 160A Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V |
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S2M0160120T | SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL Kind of package: reel; tape Drain current: 12A On-state resistance: 0.3Ω Type of transistor: N-MOSFET Power dissipation: 121W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 26.5nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...20V Pulsed drain current: 40A Mounting: SMD Case: TOLL Drain-source voltage: 1.2kV |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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S2M0160120J | SMC DIODE SOLUTIONS |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 40A; 122W Kind of package: tube Drain current: 11A On-state resistance: 0.3Ω Type of transistor: N-MOSFET Power dissipation: 122W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 26.5nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...20V Pulsed drain current: 40A Mounting: SMD Case: D2PAK-7 Drain-source voltage: 1.2kV |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ11CATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.6kW; 12.2÷13.5V; 33A; bidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 11V Breakdown voltage: 12.2...13.5V Max. forward impulse current: 33A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMBJ |
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MBRD360TR | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 3A; reel,tape Semiconductor structure: common anode; single diode Max. off-state voltage: 60V Load current: 3A Case: DPAK Max. forward voltage: 0.7V Capacitance: 300pF Max. forward impulse current: 75A Leakage current: 0.2mA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
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15SQ045TR | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; THT; 45V; 15A; R6; Ufmax: 550mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 15A Semiconductor structure: single diode Case: R6 Max. forward voltage: 0.55V Max. forward impulse current: 0.3kA Leakage current: 0.5mA Kind of package: reel; tape |
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15SQ100TR | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; THT; 100V; 15A; R6; Ufmax: 830mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 15A Semiconductor structure: single diode Case: R6 Max. forward voltage: 0.83V Max. forward impulse current: 340A Leakage current: 0.5mA Kind of package: reel; tape |
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15SQ060TR | SMC DIODE SOLUTIONS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 15A; R6; Ufmax: 680mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 15A Semiconductor structure: single diode Case: R6 Max. forward voltage: 0.68V Max. forward impulse current: 0.3kA Leakage current: 0.5mA Kind of package: reel; tape |
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SMBJ26CATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.3A; bidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 14.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMBJ |
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SMCJ36CATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.9A; bidirectional; SMC; reel; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 25.9A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMCJ |
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SMBJ28CATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.3A; bidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMBJ |
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12TQ200 | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; THT; 200V; 15A; TO220AC; Ufmax: 920mV Case: TO220AC Capacitance: 300pF Max. off-state voltage: 200V Max. forward voltage: 0.92V Load current: 15A Semiconductor structure: single diode Max. forward impulse current: 276A Leakage current: 0.55mA Kind of package: tube Type of diode: Schottky rectifying Mounting: THT |
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12TQ200STR | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 15A; reel,tape Case: D2PAK Capacitance: 300pF Max. off-state voltage: 200V Max. forward voltage: 0.92V Load current: 15A Semiconductor structure: single diode Max. forward impulse current: 276A Leakage current: 0.55mA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
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16CTQ200 | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; THT; 200V; 16A; TO220AB; Ufmax: 840mV Case: TO220AB Capacitance: 300pF Max. off-state voltage: 200V Max. forward voltage: 0.84V Load current: 16A Semiconductor structure: common cathode; double Max. forward impulse current: 330A Leakage current: 0.55mA Kind of package: tube Type of diode: Schottky rectifying Mounting: THT |
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SMCJ28CATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33.1A; bidirectional; SMC; reel; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 33.1A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMCJ |
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SMCJ30CATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 31A; bidirectional; SMC; reel; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 31A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMCJ |
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TPK30KP60A | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 30kW; 66.7÷73.7V; 312A; unidirectional; SPD4; bulk Mounting: SMD Max. off-state voltage: 60V Semiconductor structure: unidirectional Max. forward impulse current: 312A Breakdown voltage: 66.7...73.7V Leakage current: 10µA Kind of package: bulk Type of diode: TVS Manufacturer series: TPK30KP Peak pulse power dissipation: 30kW Case: SPD4 |
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TPK30KP60CA | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 30kW; 66.7÷73.7V; 312A; bidirectional; SPD4; bulk Mounting: SMD Max. off-state voltage: 60V Semiconductor structure: bidirectional Max. forward impulse current: 312A Breakdown voltage: 66.7...73.7V Leakage current: 10µA Kind of package: bulk Type of diode: TVS Manufacturer series: TPK30KP Peak pulse power dissipation: 30kW Case: SPD4 |
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MBR3060CT | SMC DIODE SOLUTIONS |
![]() ![]() Description: Diode: Schottky rectifying; THT; 60V; 30A; TO220AB; Ufmax: 770mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 30A Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.77V Max. forward impulse current: 200A Leakage current: 5mA Capacitance: 700pF Kind of package: tube |
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MBR3060CT-1 | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; THT; 60V; 30A; TO262; Ufmax: 770mV; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 30A Semiconductor structure: common cathode; double Case: TO262 Max. forward voltage: 0.77V Max. forward impulse current: 200A Leakage current: 5mA Capacitance: 700pF Kind of package: tube |
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MBR3060CTP | SMC DIODE SOLUTIONS |
![]() ![]() Description: Diode: Schottky rectifying; THT; 60V; 30A; TO220AB; Ufmax: 770mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 30A Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.77V Max. forward impulse current: 200A Leakage current: 1mA Capacitance: 700pF Kind of package: tube |
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MBR3060WT | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; THT; 60V; 30A; TO247AD; Ufmax: 770mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 30A Semiconductor structure: common cathode; double Case: TO247AD Max. forward voltage: 0.77V Max. forward impulse current: 200A Leakage current: 5mA Capacitance: 700pF Kind of package: tube |
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SMBJ75CATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.6kW; 83.3÷92.1V; 5A; bidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMBJ |
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15CTQ045STR |
Hersteller: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 180A
Leakage current: 1mA
Max. forward voltage: 0.84V
Capacitance: 400pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 180A
Leakage current: 1mA
Max. forward voltage: 0.84V
Capacitance: 400pF
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25CTQ045STR |
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Hersteller: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 30A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 0.3kA
Leakage current: 1mA
Max. forward voltage: 0.71V
Capacitance: 900pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 30A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 0.3kA
Leakage current: 1mA
Max. forward voltage: 0.71V
Capacitance: 900pF
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SDURB1530TR |
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Hersteller: SMC DIODE SOLUTIONS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 15A; 45ns; D2PAK; Ufmax: 1.26V; Ir: 10uA
Type of diode: rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 300V
Load current: 15A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 1.26V
Reverse recovery time: 45ns
Leakage current: 10µA
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 15A; 45ns; D2PAK; Ufmax: 1.26V; Ir: 10uA
Type of diode: rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 300V
Load current: 15A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 1.26V
Reverse recovery time: 45ns
Leakage current: 10µA
Features of semiconductor devices: ultrafast switching
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SDURB1530CTTR |
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Hersteller: SMC DIODE SOLUTIONS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 8Ax2; 45ns; D2PAK; Ufmax: 1.3V; Ir: 10uA
Type of diode: rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 300V
Load current: 8A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. load current: 15A
Max. forward voltage: 1.3V
Reverse recovery time: 45ns
Leakage current: 10µA
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 8Ax2; 45ns; D2PAK; Ufmax: 1.3V; Ir: 10uA
Type of diode: rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 300V
Load current: 8A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. load current: 15A
Max. forward voltage: 1.3V
Reverse recovery time: 45ns
Leakage current: 10µA
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
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SMAJ20ATR |
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Hersteller: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 222÷24.5V; 12.3A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 222...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel
Manufacturer series: SMAJ
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 222÷24.5V; 12.3A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 222...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel
Manufacturer series: SMAJ
Leakage current: 5µA
Produkt ist nicht verfügbar
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MBRD660CTTR |
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Hersteller: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 6A
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 75A
Max. forward voltage: 0.9V
Capacitance: 200pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 6A
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 75A
Max. forward voltage: 0.9V
Capacitance: 200pF
Produkt ist nicht verfügbar
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123NQ100-1 |
Hersteller: SMC DIODE SOLUTIONS
Category: Diode modules
Description: Single diode; 100V; If: 120A; PRM1-1; Ifsm: 2.52kA; screw; screw
Max. off-state voltage: 100V
Load current: 120A
Max. forward impulse current: 2.52kA
Case: PRM1-1
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Type of semiconductor module: diode
Semiconductor structure: single diode
Category: Diode modules
Description: Single diode; 100V; If: 120A; PRM1-1; Ifsm: 2.52kA; screw; screw
Max. off-state voltage: 100V
Load current: 120A
Max. forward impulse current: 2.52kA
Case: PRM1-1
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Type of semiconductor module: diode
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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123NQ100R-1 |
Hersteller: SMC DIODE SOLUTIONS
Category: Diode modules
Description: Single diode; 100V; If: 120A; PRM1-1; Ifsm: 2.52kA; screw; screw
Max. off-state voltage: 100V
Load current: 120A
Max. forward impulse current: 2.52kA
Case: PRM1-1
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Type of semiconductor module: diode
Semiconductor structure: single diode
Category: Diode modules
Description: Single diode; 100V; If: 120A; PRM1-1; Ifsm: 2.52kA; screw; screw
Max. off-state voltage: 100V
Load current: 120A
Max. forward impulse current: 2.52kA
Case: PRM1-1
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Type of semiconductor module: diode
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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P6KE51CATA |
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Hersteller: SMC DIODE SOLUTIONS
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 48.5÷53.6V; 8.7A; bidirectional; DO15; 0.6kW; tape; P6KE
Type of diode: TVS
Max. off-state voltage: 43.6V
Breakdown voltage: 48.5...53.6V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 0.6kW
Kind of package: tape
Manufacturer series: P6KE
Max. forward impulse current: 8.7A
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 48.5÷53.6V; 8.7A; bidirectional; DO15; 0.6kW; tape; P6KE
Type of diode: TVS
Max. off-state voltage: 43.6V
Breakdown voltage: 48.5...53.6V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 0.6kW
Kind of package: tape
Manufacturer series: P6KE
Max. forward impulse current: 8.7A
Produkt ist nicht verfügbar
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S3D04065A |
Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 2.2V
Case: TO220AC
Max. off-state voltage: 650V
Max. load current: 15A
Max. forward voltage: 2.2V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Power dissipation: 39W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 2.2V
Case: TO220AC
Max. off-state voltage: 650V
Max. load current: 15A
Max. forward voltage: 2.2V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Power dissipation: 39W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
46+ | 1.56 EUR |
S3D04065F |
Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; 39W; tube
Case: ITO220AC
Max. off-state voltage: 650V
Max. load current: 15A
Max. forward voltage: 2.2V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Power dissipation: 39W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; 39W; tube
Case: ITO220AC
Max. off-state voltage: 650V
Max. load current: 15A
Max. forward voltage: 2.2V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Power dissipation: 39W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.58 EUR |
S3D04065E |
Hersteller: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape; 39W
Case: DPAK
Max. off-state voltage: 650V
Max. forward voltage: 2.2V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Power dissipation: 39W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape; 39W
Case: DPAK
Max. off-state voltage: 650V
Max. forward voltage: 2.2V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Power dissipation: 39W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.43 EUR |
P4SMF36A |
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Hersteller: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷36.8V; 6.9A; unidirectional; SOD123F; reel
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Kind of package: reel
Manufacturer series: P4SMF
Max. off-state voltage: 36V
Max. forward impulse current: 6.9A
Breakdown voltage: 40...36.8V
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷36.8V; 6.9A; unidirectional; SOD123F; reel
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Kind of package: reel
Manufacturer series: P4SMF
Max. off-state voltage: 36V
Max. forward impulse current: 6.9A
Breakdown voltage: 40...36.8V
Leakage current: 1µA
Produkt ist nicht verfügbar
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S2M0025120J |
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Hersteller: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; Idm: 250A; 311W
Drain-source voltage: 1.2kV
Drain current: 70A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 311W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: Kelvin terminal
Gate charge: 177nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 250A
Mounting: SMD
Case: TO263-7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; Idm: 250A; 311W
Drain-source voltage: 1.2kV
Drain current: 70A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 311W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: Kelvin terminal
Gate charge: 177nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 250A
Mounting: SMD
Case: TO263-7
Produkt ist nicht verfügbar
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S3M0016120B |
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Hersteller: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 75A; Idm: 250A; 576W
Kind of package: tube
Drain current: 75A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 576W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 287nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 250A
Mounting: SMD
Case: T2PAK
Drain-source voltage: 1.2kV
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 75A; Idm: 250A; 576W
Kind of package: tube
Drain current: 75A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 576W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 287nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 250A
Mounting: SMD
Case: T2PAK
Drain-source voltage: 1.2kV
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.56 EUR |
6+ | 12.36 EUR |
7+ | 11.68 EUR |
10+ | 11.61 EUR |
S3D20065A |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Case: TO220AC
Mounting: THT
Kind of package: tube
Max. forward voltage: 2.4V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 160A
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Case: TO220AC
Mounting: THT
Kind of package: tube
Max. forward voltage: 2.4V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 160A
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
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S3D20065C |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO220AB; tube
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. load current: 20A
Max. forward voltage: 2.4V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 102A
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO220AB; tube
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. load current: 20A
Max. forward voltage: 2.4V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 102A
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
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S3D20065GTR |
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Hersteller: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 2.4V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 160A
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 2.4V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 160A
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
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S2M0160120T |
Hersteller: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL
Kind of package: reel; tape
Drain current: 12A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 121W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 26.5nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 40A
Mounting: SMD
Case: TOLL
Drain-source voltage: 1.2kV
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL
Kind of package: reel; tape
Drain current: 12A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 121W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 26.5nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 40A
Mounting: SMD
Case: TOLL
Drain-source voltage: 1.2kV
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.92 EUR |
35+ | 2.04 EUR |
38+ | 1.93 EUR |
S2M0160120J |
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Hersteller: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 40A; 122W
Kind of package: tube
Drain current: 11A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 122W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 26.5nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 40A
Mounting: SMD
Case: D2PAK-7
Drain-source voltage: 1.2kV
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 40A; 122W
Kind of package: tube
Drain current: 11A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 122W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 26.5nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 40A
Mounting: SMD
Case: D2PAK-7
Drain-source voltage: 1.2kV
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.35 EUR |
19+ | 3.92 EUR |
20+ | 3.70 EUR |
SMBJ11CATR |
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Hersteller: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 12.2÷13.5V; 33A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 12.2÷13.5V; 33A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
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MBRD360TR |
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Hersteller: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 3A; reel,tape
Semiconductor structure: common anode; single diode
Max. off-state voltage: 60V
Load current: 3A
Case: DPAK
Max. forward voltage: 0.7V
Capacitance: 300pF
Max. forward impulse current: 75A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 3A; reel,tape
Semiconductor structure: common anode; single diode
Max. off-state voltage: 60V
Load current: 3A
Case: DPAK
Max. forward voltage: 0.7V
Capacitance: 300pF
Max. forward impulse current: 75A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
15SQ045TR |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; R6; Ufmax: 550mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: R6
Max. forward voltage: 0.55V
Max. forward impulse current: 0.3kA
Leakage current: 0.5mA
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; R6; Ufmax: 550mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: R6
Max. forward voltage: 0.55V
Max. forward impulse current: 0.3kA
Leakage current: 0.5mA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
15SQ100TR |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15A; R6; Ufmax: 830mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A
Semiconductor structure: single diode
Case: R6
Max. forward voltage: 0.83V
Max. forward impulse current: 340A
Leakage current: 0.5mA
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15A; R6; Ufmax: 830mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A
Semiconductor structure: single diode
Case: R6
Max. forward voltage: 0.83V
Max. forward impulse current: 340A
Leakage current: 0.5mA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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15SQ060TR |
Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15A; R6; Ufmax: 680mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A
Semiconductor structure: single diode
Case: R6
Max. forward voltage: 0.68V
Max. forward impulse current: 0.3kA
Leakage current: 0.5mA
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15A; R6; Ufmax: 680mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A
Semiconductor structure: single diode
Case: R6
Max. forward voltage: 0.68V
Max. forward impulse current: 0.3kA
Leakage current: 0.5mA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMBJ26CATR |
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Hersteller: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.3A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.3A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
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SMCJ36CATR |
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Hersteller: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.9A; bidirectional; SMC; reel; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.9A; bidirectional; SMC; reel; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMCJ
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SMBJ28CATR |
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Hersteller: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.3A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.3A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
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12TQ200 |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15A; TO220AC; Ufmax: 920mV
Case: TO220AC
Capacitance: 300pF
Max. off-state voltage: 200V
Max. forward voltage: 0.92V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 276A
Leakage current: 0.55mA
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15A; TO220AC; Ufmax: 920mV
Case: TO220AC
Capacitance: 300pF
Max. off-state voltage: 200V
Max. forward voltage: 0.92V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 276A
Leakage current: 0.55mA
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
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12TQ200STR |
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Hersteller: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 15A; reel,tape
Case: D2PAK
Capacitance: 300pF
Max. off-state voltage: 200V
Max. forward voltage: 0.92V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 276A
Leakage current: 0.55mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 15A; reel,tape
Case: D2PAK
Capacitance: 300pF
Max. off-state voltage: 200V
Max. forward voltage: 0.92V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 276A
Leakage current: 0.55mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
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16CTQ200 |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 16A; TO220AB; Ufmax: 840mV
Case: TO220AB
Capacitance: 300pF
Max. off-state voltage: 200V
Max. forward voltage: 0.84V
Load current: 16A
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Leakage current: 0.55mA
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 16A; TO220AB; Ufmax: 840mV
Case: TO220AB
Capacitance: 300pF
Max. off-state voltage: 200V
Max. forward voltage: 0.84V
Load current: 16A
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Leakage current: 0.55mA
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
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SMCJ28CATR |
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Hersteller: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33.1A; bidirectional; SMC; reel; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33.1A; bidirectional; SMC; reel; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMCJ
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SMCJ30CATR |
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Hersteller: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 31A; bidirectional; SMC; reel; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 31A; bidirectional; SMC; reel; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMCJ
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TPK30KP60A |
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Hersteller: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 30kW; 66.7÷73.7V; 312A; unidirectional; SPD4; bulk
Mounting: SMD
Max. off-state voltage: 60V
Semiconductor structure: unidirectional
Max. forward impulse current: 312A
Breakdown voltage: 66.7...73.7V
Leakage current: 10µA
Kind of package: bulk
Type of diode: TVS
Manufacturer series: TPK30KP
Peak pulse power dissipation: 30kW
Case: SPD4
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 30kW; 66.7÷73.7V; 312A; unidirectional; SPD4; bulk
Mounting: SMD
Max. off-state voltage: 60V
Semiconductor structure: unidirectional
Max. forward impulse current: 312A
Breakdown voltage: 66.7...73.7V
Leakage current: 10µA
Kind of package: bulk
Type of diode: TVS
Manufacturer series: TPK30KP
Peak pulse power dissipation: 30kW
Case: SPD4
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TPK30KP60CA |
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Hersteller: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 30kW; 66.7÷73.7V; 312A; bidirectional; SPD4; bulk
Mounting: SMD
Max. off-state voltage: 60V
Semiconductor structure: bidirectional
Max. forward impulse current: 312A
Breakdown voltage: 66.7...73.7V
Leakage current: 10µA
Kind of package: bulk
Type of diode: TVS
Manufacturer series: TPK30KP
Peak pulse power dissipation: 30kW
Case: SPD4
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 30kW; 66.7÷73.7V; 312A; bidirectional; SPD4; bulk
Mounting: SMD
Max. off-state voltage: 60V
Semiconductor structure: bidirectional
Max. forward impulse current: 312A
Breakdown voltage: 66.7...73.7V
Leakage current: 10µA
Kind of package: bulk
Type of diode: TVS
Manufacturer series: TPK30KP
Peak pulse power dissipation: 30kW
Case: SPD4
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MBR3060CT |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30A; TO220AB; Ufmax: 770mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.77V
Max. forward impulse current: 200A
Leakage current: 5mA
Capacitance: 700pF
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30A; TO220AB; Ufmax: 770mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.77V
Max. forward impulse current: 200A
Leakage current: 5mA
Capacitance: 700pF
Kind of package: tube
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MBR3060CT-1 |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30A; TO262; Ufmax: 770mV; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO262
Max. forward voltage: 0.77V
Max. forward impulse current: 200A
Leakage current: 5mA
Capacitance: 700pF
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30A; TO262; Ufmax: 770mV; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO262
Max. forward voltage: 0.77V
Max. forward impulse current: 200A
Leakage current: 5mA
Capacitance: 700pF
Kind of package: tube
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MBR3060CTP |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30A; TO220AB; Ufmax: 770mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.77V
Max. forward impulse current: 200A
Leakage current: 1mA
Capacitance: 700pF
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30A; TO220AB; Ufmax: 770mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.77V
Max. forward impulse current: 200A
Leakage current: 1mA
Capacitance: 700pF
Kind of package: tube
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MBR3060WT |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30A; TO247AD; Ufmax: 770mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 0.77V
Max. forward impulse current: 200A
Leakage current: 5mA
Capacitance: 700pF
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30A; TO247AD; Ufmax: 770mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 0.77V
Max. forward impulse current: 200A
Leakage current: 5mA
Capacitance: 700pF
Kind of package: tube
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SMBJ75CATR |
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Hersteller: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷92.1V; 5A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷92.1V; 5A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
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