| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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VO3063-X006 | VISHAY |
 Category: OptotriacsDescription: Optotriac; 4.42kV; zero voltage crossing driver; DIP6; Ch: 1 Case: DIP6 Mounting: THT Number of channels: 1 Kind of output: zero voltage crossing driver Insulation voltage: 4.42kV Slew rate: 1.5kV/μs Manufacturer series: VO3063 Type of optocoupler: optotriac |
Produkt ist nicht verfügbar |
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CNY17F-4X006 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Case: DIP6 Mounting: THT Turn-on time: 6µs Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 16-32%@10mA Manufacturer series: CNY17F Type of optocoupler: optocoupler Collector-emitter voltage: 70V Turn-off time: 25µs |
Produkt ist nicht verfügbar |
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VO4156M-X006 | VISHAY |
Category: Optotriacs Description: Optotriac; 4.42kV; zero voltage crossing driver; DIP6; Ch: 1 Case: DIP6 Mounting: THT Number of channels: 1 Kind of output: zero voltage crossing driver Insulation voltage: 4.42kV Slew rate: 5kV/μs Type of optocoupler: optotriac |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
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SFH620A-3X006 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-320%@10mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 3µs Turn-off time: 2.3µs |
auf Bestellung 653 Stücke: Lieferzeit 14-21 Tag (e) |
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| GSIB620-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 180A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 6A Max. forward impulse current: 180A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 0.95V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| GSIB640-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 180A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 6A Max. forward impulse current: 180A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 0.95V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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GSIB660-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 180A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 6A Max. forward impulse current: 180A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 0.95V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| GSIB680-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 180A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 6A Max. forward impulse current: 180A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 0.95V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| VS-1KAB60E | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.2A; Ifsm: 52A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1.2A Max. forward impulse current: 52A Version: square Case: D-38 Electrical mounting: THT Leads: wire Ø 0.8mm Kind of package: bulk Max. forward voltage: 1.1V |
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| VS-2KBB60R | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.9A; Ifsm: 50A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1.9A Max. forward impulse current: 50A Version: flat Case: 2KBB Electrical mounting: THT Leads: wire Ø 0.9mm Kind of package: bulk Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
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P6SMB68A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 68V; 6.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58.1V Breakdown voltage: 68V Max. forward impulse current: 6.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
auf Bestellung 2572 Stücke: Lieferzeit 14-21 Tag (e) |
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| VS-8EWS08STR-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 0.8kV Features of semiconductor devices: glass passivated; high voltage Leakage current: 0.5mA Type of diode: rectifying Max. forward impulse current: 150A Max. forward voltage: 1.1V Load current: 8A |
Produkt ist nicht verfügbar |
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| VS-8EWS08STRL-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 0.8kV Features of semiconductor devices: glass passivated; high voltage Leakage current: 0.5mA Type of diode: rectifying Max. forward impulse current: 150A Max. forward voltage: 1.1V Load current: 8A |
Produkt ist nicht verfügbar |
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| VS-8EWS12S-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A; tube Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: glass passivated; high voltage Case: DPAK Max. forward voltage: 1.1V Max. forward impulse current: 150A Leakage current: 0.5mA Kind of package: tube |
Produkt ist nicht verfügbar |
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VS-8EWS16S-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A Case: DPAK Mounting: SMD Semiconductor structure: single diode Max. off-state voltage: 1.6kV Features of semiconductor devices: glass passivated; high voltage Type of diode: rectifying Max. forward impulse current: 150A Max. forward voltage: 1.1V Load current: 8A |
Produkt ist nicht verfügbar |
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TEMT6200FX01 | VISHAY |
Category: Phototransistors Description: Phototransistor; 0805; λp max: 550nm; 6V; 60°; Lens: green Type of photoelement: phototransistor Case: 0805 Wavelength of peak sensitivity: 550nm Collector-emitter voltage: 6V Viewing angle: 60° LED lens: green Mounting: SMD Wavelength: 450...610nm |
auf Bestellung 1101 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ36A-E3/61 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 300W; 40V; 6.9A; unidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 36V Breakdown voltage: 40V Max. forward impulse current: 6.9A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMAJ |
auf Bestellung 5033 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0805A180JXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 18pF; 100V; C0G (NP0); ±5%; SMD; 0805 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 18pF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
auf Bestellung 6300 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0805Y225KXQTW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 2.2uF; 10V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Capacitance: 2.2µF Operating voltage: 10V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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VJ0805Y225KXXTW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 2.2uF; 25V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Capacitance: 2.2µF Operating voltage: 25V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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BRT13H | VISHAY |
Category: Optotriacs Description: Optotriac; 5.3kV; Uout: 800V; DIP6; Ch: 1; BRT13 Type of optocoupler: optotriac Insulation voltage: 5.3kV Output voltage: 800V Kind of output: without zero voltage crossing driver Case: DIP6 Max. off-state voltage: 6V Mounting: THT Number of channels: 1 Manufacturer series: BRT13 |
auf Bestellung 2636 Stücke: Lieferzeit 14-21 Tag (e) |
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BRT13H-X007 | VISHAY |
Category: Optotriacs Description: Optotriac; 5.3kV; Uout: 800V; Gull wing 6; Ch: 1; BRT13 Type of optocoupler: optotriac Insulation voltage: 5.3kV Output voltage: 800V Kind of output: without zero voltage crossing driver Case: Gull wing 6 Max. off-state voltage: 6V Mounting: SMD Number of channels: 1 Manufacturer series: BRT13 |
Produkt ist nicht verfügbar |
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SMM02040D3092BB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 30.9kΩ; 0.4W; ±0.1% Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 30.9kΩ Power: 0.4W Tolerance: ±0.1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 25ppm/°C |
Produkt ist nicht verfügbar |
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CRCW080536K5FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 36.5kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 36.5kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
auf Bestellung 6600 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW0805133KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 133kΩ; 0.125W; ±1%; -55÷155°C Tolerance: ±1% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...155°C Max. operating voltage: 150V Power: 0.125W Resistance: 133kΩ Type of resistor: thick film |
Produkt ist nicht verfügbar |
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CRCW25125R11FKEGHP | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 5.11Ω; 1.5W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 2512 Case - mm: 6332 Resistance: 5.11Ω Power: 1.5W Tolerance: ±1% Max. operating voltage: 500V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
Produkt ist nicht verfügbar |
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| SIR122DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 59.6A; Idm: 150A Case: PowerPAK® SO8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 80V Drain current: 59.6A On-state resistance: 9mΩ Type of transistor: N-MOSFET Power dissipation: 65.7W Polarisation: unipolar Gate charge: 44nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A |
Produkt ist nicht verfügbar |
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| SIR638ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 400A Power dissipation: 104W Case: PowerPAK® SO8 On-state resistance: 1.16mΩ Mounting: SMD Gate charge: 165nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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BFC233868418 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 1nF; THT; ±20%; 10mm; 1kVDC; 300VAC Type of capacitor: polypropylene Capacitance: 1nF Operating voltage: 300V AC; 1kV DC Body dimensions: 12.5x4x10mm Mounting: THT Terminal pitch: 10mm Tolerance: ±20% |
auf Bestellung 2451 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ60A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 66.7V; 6.2A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 60V Breakdown voltage: 66.7V Max. forward impulse current: 6.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
auf Bestellung 495 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ60D-M3/H | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 67.7V; 6.28A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 60V Breakdown voltage: 67.7V Max. forward impulse current: 6.28A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
Produkt ist nicht verfügbar |
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SI2392ADS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.1A; Idm: 8A; 1.6W; SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 100V Drain current: 3.1A On-state resistance: 126mΩ Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Gate charge: 10.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 8A Case: SOT23 |
Produkt ist nicht verfügbar |
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| SI4392ADY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
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| SI7172ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| SI7322ADN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| SIDR500EP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 421A; Idm: 500A Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 421A On-state resistance: 0.68mΩ Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Gate charge: 180nC Technology: TrenchFET® Kind of channel: enhanced Pulsed drain current: 500A |
Produkt ist nicht verfügbar |
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| SI7121ADN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -50A; 17.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Pulsed drain current: -50A Power dissipation: 17.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIA811ADJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -20V; 6.8W Type of transistor: P-MOSFET + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Pulsed drain current: -8A Power dissipation: 6.8W Gate-source voltage: ±8V On-state resistance: 0.205Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
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SQ2361AEES-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.8A Pulsed drain current: -11A Power dissipation: 0.67W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 315mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Application: automotive industry |
Produkt ist nicht verfügbar |
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| SQJ431AEP-T1_BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -200V; -9.4A; Idm: -60A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -9.4A Pulsed drain current: -60A Power dissipation: 68W Gate-source voltage: ±20V On-state resistance: 763mΩ Mounting: SMD Gate charge: 85nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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1.5KE24A-E3/54 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 24V; 45.2A; unidirectional; DO201; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 45.2A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
auf Bestellung 986 Stücke: Lieferzeit 14-21 Tag (e) |
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TDCG1060M | VISHAY |
Category: 7-segment LED displays Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd Type of display: LED Kind of display: 7-segment Digit height: 10mm; 0.39" Number of characters: 4 Colour: green Luminosity: 2.8...4mcd Common electrode: cathode Dimensions: 40.2x12.8x7mm Mounting: THT Wavelength: 562...575nm Operating current: 20mA Operating voltage: 2...2.4V |
auf Bestellung 110 Stücke: Lieferzeit 14-21 Tag (e) |
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| PRV6SAABGYB25105KA | VISHAY |
Category: Cermet single turn potentiometers Description: Potentiometer: shaft; single turn; 1MΩ; 1.5W; ±10%; 3.17mm; linear Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 1MΩ Power: 1.5W Tolerance: ±10% Characteristics: linear Mechanical rotation angle: 300° Operating temperature: -55...125°C Track material: cermet Electrical rotation angle: 270° Mechanical durability: 50000 cycles Temperature coefficient: 150ppm/°C IP rating: IP67 Leads: for soldering Shaft diameter: 3.17mm Shaft length: 16mm |
Produkt ist nicht verfügbar |
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T18105KT10 | VISHAY |
Category: 19mm multiturn THT trimmers Description: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear Mounting: THT Operating temperature: -55...125°C Characteristics: linear Track material: cermet Kind of potentiometer: multiturn Engineering PN: 43P; 89; 3006 Min. insulation resistance: 1TΩ Power: 0.75W Resistance: 1MΩ Tolerance: ±10% Temperature coefficient: 100ppm/°C IP rating: IP67 Potentiometer standard: 19mm Type of potentiometer: mounting Number of electrical turns: 15 ±1 |
auf Bestellung 445 Stücke: Lieferzeit 14-21 Tag (e) |
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T93YB105KT20 | VISHAY |
Category: 3/8 inch multiturn THT trimmers Description: Potentiometer: mounting; multiturn; 1MΩ; 500mW; THT; ±10%; linear Type of potentiometer: mounting Kind of potentiometer: multiturn Resistance: 1MΩ Power: 0.5W Mounting: THT Tolerance: ±10% Characteristics: linear Potentiometer series: T93YB Track material: cermet Operating temperature: -55...125°C Potentiometer standard: 3/8" Temperature coefficient: 100ppm/°C Body dimensions: 9.8x9.8x5mm Terminal pitch: 2.5x2.5mm Number of electrical turns: 19 ±2 Max. operating voltage: 250V Number of mechanical turns: 22 ±5 Engineering PN: 64Y; 67Y; 3296Y IP rating: IP67 Torque: 1,5Ncm |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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TS53YJ105MR10 | VISHAY |
Category: Single turn SMD trimmers Description: Potentiometer: mounting; single turn; 1MΩ; 250mW; SMD; ±20%; linear Mounting: SMD Resistance: 1MΩ Power: 0.25W Tolerance: ±20% Max. operating voltage: 200V Body dimensions: 5x5x2.7mm Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C IP rating: IP67 Type of potentiometer: mounting Characteristics: linear Mechanical rotation angle: 270 ±10° Electrical rotation angle: 220 ±15° Torque: 1,5Ncm Track material: cermet Kind of potentiometer: single turn |
auf Bestellung 487 Stücke: Lieferzeit 14-21 Tag (e) |
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| GSIB15A60-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 15A Max. forward impulse current: 200A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| SI4890DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 11A; Idm: 50A; 2.5W Mounting: SMD Case: SO8 Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Gate charge: 20nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 50A Drain-source voltage: 30V Drain current: 11A On-state resistance: 20mΩ |
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| SIHFR9024-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Pulsed drain current: -35A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIHFR9024TR-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Pulsed drain current: -35A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI7421DN-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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| SI7421DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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| MAL205742102E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; SNAP-IN; 1mF; 200VDC; Ø30x50mm; ±20% Mounting: SNAP-IN Operating temperature: -40...85°C Terminal pitch: 10mm Tolerance: ±20% Body dimensions: Ø30x50mm Type of capacitor: electrolytic Capacitance: 1mF Operating voltage: 200V DC Service life: 12000h |
Produkt ist nicht verfügbar |
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 |
MAL225742102E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; SNAP-IN; 1mF; 200VDC; Ø25x45mm; ±20% Type of capacitor: electrolytic Capacitance: 1mF Operating voltage: 200V DC Service life: 5000h Mounting: SNAP-IN Terminal pitch: 10mm Operating temperature: -40...85°C Tolerance: ±20% Body dimensions: Ø25x45mm |
Produkt ist nicht verfügbar |
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| SIHH26N60E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 50A; 202W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 50A Power dissipation: 202W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 135mΩ Mounting: SMD Gate charge: 116nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| ZSC00AK6811HARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 50VDC; Ø16x16.5mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 680µF Operating voltage: 50V DC Body dimensions: Ø16x16.5mm Tolerance: ±20% Operating temperature: -55...105°C |
Produkt ist nicht verfügbar |
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| ZSC00AM6811JARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 63VDC; Ø16x21.5mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 680µF Operating voltage: 63V DC Body dimensions: Ø16x21.5mm Tolerance: ±20% Operating temperature: -55...105°C |
Produkt ist nicht verfügbar |
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| ZSC00AN6811JARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 63VDC; Ø18x16.5mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 680µF Operating voltage: 63V DC Body dimensions: Ø18x16.5mm Tolerance: ±20% Operating temperature: -55...105°C |
Produkt ist nicht verfügbar |
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| ZSC00AP6811KARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 80VDC; Ø18x21.5mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 680µF Operating voltage: 80V DC Body dimensions: Ø18x21.5mm Tolerance: ±20% Operating temperature: -55...105°C |
Produkt ist nicht verfügbar |
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| ZSC00XM6810JARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 6.3VDC; Ø10x7.7mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 680µF Operating voltage: 6.3V DC Body dimensions: Ø10x7.7mm Tolerance: ±20% Operating temperature: -55...105°C |
Produkt ist nicht verfügbar |
| VO3063-X006 |
|
Hersteller: VISHAY
Category: Optotriacs
Description: Optotriac; 4.42kV; zero voltage crossing driver; DIP6; Ch: 1
Case: DIP6
Mounting: THT
Number of channels: 1
Kind of output: zero voltage crossing driver
Insulation voltage: 4.42kV
Slew rate: 1.5kV/μs
Manufacturer series: VO3063
Type of optocoupler: optotriac
Category: Optotriacs
Description: Optotriac; 4.42kV; zero voltage crossing driver; DIP6; Ch: 1
Case: DIP6
Mounting: THT
Number of channels: 1
Kind of output: zero voltage crossing driver
Insulation voltage: 4.42kV
Slew rate: 1.5kV/μs
Manufacturer series: VO3063
Type of optocoupler: optotriac
Produkt ist nicht verfügbar
| CNY17F-4X006 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Case: DIP6
Mounting: THT
Turn-on time: 6µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 16-32%@10mA
Manufacturer series: CNY17F
Type of optocoupler: optocoupler
Collector-emitter voltage: 70V
Turn-off time: 25µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Case: DIP6
Mounting: THT
Turn-on time: 6µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 16-32%@10mA
Manufacturer series: CNY17F
Type of optocoupler: optocoupler
Collector-emitter voltage: 70V
Turn-off time: 25µs
Produkt ist nicht verfügbar
| VO4156M-X006 |
|
Hersteller: VISHAY
Category: Optotriacs
Description: Optotriac; 4.42kV; zero voltage crossing driver; DIP6; Ch: 1
Case: DIP6
Mounting: THT
Number of channels: 1
Kind of output: zero voltage crossing driver
Insulation voltage: 4.42kV
Slew rate: 5kV/μs
Type of optocoupler: optotriac
Category: Optotriacs
Description: Optotriac; 4.42kV; zero voltage crossing driver; DIP6; Ch: 1
Case: DIP6
Mounting: THT
Number of channels: 1
Kind of output: zero voltage crossing driver
Insulation voltage: 4.42kV
Slew rate: 5kV/μs
Type of optocoupler: optotriac
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 36+ | 1.99 EUR |
| SFH620A-3X006 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-320%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 3µs
Turn-off time: 2.3µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-320%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 3µs
Turn-off time: 2.3µs
auf Bestellung 653 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 69+ | 1.05 EUR |
| 113+ | 0.64 EUR |
| 139+ | 0.52 EUR |
| 194+ | 0.37 EUR |
| 205+ | 0.35 EUR |
| GSIB620-E3/45 |
|
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 180A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 180A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| GSIB640-E3/45 |
|
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 180A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 180A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| GSIB660-E3/45 |
|
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 180A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 180A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| GSIB680-E3/45 |
|
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 180A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 180A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| VS-1KAB60E |
|
Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.2A; Ifsm: 52A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.2A
Max. forward impulse current: 52A
Version: square
Case: D-38
Electrical mounting: THT
Leads: wire Ø 0.8mm
Kind of package: bulk
Max. forward voltage: 1.1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.2A; Ifsm: 52A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.2A
Max. forward impulse current: 52A
Version: square
Case: D-38
Electrical mounting: THT
Leads: wire Ø 0.8mm
Kind of package: bulk
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
| VS-2KBB60R |
|
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.9A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.9A
Max. forward impulse current: 50A
Version: flat
Case: 2KBB
Electrical mounting: THT
Leads: wire Ø 0.9mm
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.9A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.9A
Max. forward impulse current: 50A
Version: flat
Case: 2KBB
Electrical mounting: THT
Leads: wire Ø 0.9mm
Kind of package: bulk
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
| P6SMB68A-E3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 68V; 6.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 6.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 68V; 6.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 6.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
auf Bestellung 2572 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 363+ | 0.2 EUR |
| 521+ | 0.14 EUR |
| 562+ | 0.13 EUR |
| 625+ | 0.11 EUR |
| VS-8EWS08STR-M3 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 0.8kV
Features of semiconductor devices: glass passivated; high voltage
Leakage current: 0.5mA
Type of diode: rectifying
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Load current: 8A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 0.8kV
Features of semiconductor devices: glass passivated; high voltage
Leakage current: 0.5mA
Type of diode: rectifying
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Load current: 8A
Produkt ist nicht verfügbar
| VS-8EWS08STRL-M3 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 0.8kV
Features of semiconductor devices: glass passivated; high voltage
Leakage current: 0.5mA
Type of diode: rectifying
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Load current: 8A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 0.8kV
Features of semiconductor devices: glass passivated; high voltage
Leakage current: 0.5mA
Type of diode: rectifying
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Load current: 8A
Produkt ist nicht verfügbar
| VS-8EWS12S-M3 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; high voltage
Case: DPAK
Max. forward voltage: 1.1V
Max. forward impulse current: 150A
Leakage current: 0.5mA
Kind of package: tube
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; high voltage
Case: DPAK
Max. forward voltage: 1.1V
Max. forward impulse current: 150A
Leakage current: 0.5mA
Kind of package: tube
Produkt ist nicht verfügbar
| VS-8EWS16S-M3 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A
Case: DPAK
Mounting: SMD
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Features of semiconductor devices: glass passivated; high voltage
Type of diode: rectifying
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Load current: 8A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A
Case: DPAK
Mounting: SMD
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Features of semiconductor devices: glass passivated; high voltage
Type of diode: rectifying
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Load current: 8A
Produkt ist nicht verfügbar
| TEMT6200FX01 |
|
Hersteller: VISHAY
Category: Phototransistors
Description: Phototransistor; 0805; λp max: 550nm; 6V; 60°; Lens: green
Type of photoelement: phototransistor
Case: 0805
Wavelength of peak sensitivity: 550nm
Collector-emitter voltage: 6V
Viewing angle: 60°
LED lens: green
Mounting: SMD
Wavelength: 450...610nm
Category: Phototransistors
Description: Phototransistor; 0805; λp max: 550nm; 6V; 60°; Lens: green
Type of photoelement: phototransistor
Case: 0805
Wavelength of peak sensitivity: 550nm
Collector-emitter voltage: 6V
Viewing angle: 60°
LED lens: green
Mounting: SMD
Wavelength: 450...610nm
auf Bestellung 1101 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 56+ | 1.29 EUR |
| 91+ | 0.79 EUR |
| 180+ | 0.4 EUR |
| 191+ | 0.38 EUR |
| SMAJ36A-E3/61 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 40V; 6.9A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMAJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 40V; 6.9A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMAJ
auf Bestellung 5033 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 309+ | 0.23 EUR |
| 582+ | 0.12 EUR |
| 658+ | 0.11 EUR |
| 759+ | 0.094 EUR |
| 803+ | 0.089 EUR |
| VJ0805A180JXBCW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 18pF; 100V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 18pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 18pF; 100V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 18pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
auf Bestellung 6300 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1900+ | 0.039 EUR |
| 2700+ | 0.027 EUR |
| 4300+ | 0.017 EUR |
| 5500+ | 0.013 EUR |
| 5800+ | 0.012 EUR |
| VJ0805Y225KXQTW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 2.2uF; 10V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 2.2µF
Operating voltage: 10V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 2.2uF; 10V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 2.2µF
Operating voltage: 10V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VJ0805Y225KXXTW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 2.2uF; 25V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 2.2µF
Operating voltage: 25V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 2.2uF; 25V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 2.2µF
Operating voltage: 25V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| BRT13H |
|
Hersteller: VISHAY
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; DIP6; Ch: 1; BRT13
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Mounting: THT
Number of channels: 1
Manufacturer series: BRT13
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; DIP6; Ch: 1; BRT13
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Mounting: THT
Number of channels: 1
Manufacturer series: BRT13
auf Bestellung 2636 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 4.93 EUR |
| 23+ | 3.2 EUR |
| 30+ | 2.45 EUR |
| 31+ | 2.32 EUR |
| BRT13H-X007 |
|
Hersteller: VISHAY
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; Gull wing 6; Ch: 1; BRT13
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: without zero voltage crossing driver
Case: Gull wing 6
Max. off-state voltage: 6V
Mounting: SMD
Number of channels: 1
Manufacturer series: BRT13
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; Gull wing 6; Ch: 1; BRT13
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: without zero voltage crossing driver
Case: Gull wing 6
Max. off-state voltage: 6V
Mounting: SMD
Number of channels: 1
Manufacturer series: BRT13
Produkt ist nicht verfügbar
| SMM02040D3092BB300 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 30.9kΩ; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 30.9kΩ
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 30.9kΩ; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 30.9kΩ
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Produkt ist nicht verfügbar
| CRCW080536K5FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 36.5kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 36.5kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 36.5kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 36.5kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
auf Bestellung 6600 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2200+ | 0.034 EUR |
| 4000+ | 0.018 EUR |
| 6500+ | 0.011 EUR |
| CRCW0805133KFKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 133kΩ; 0.125W; ±1%; -55÷155°C
Tolerance: ±1%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...155°C
Max. operating voltage: 150V
Power: 0.125W
Resistance: 133kΩ
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 133kΩ; 0.125W; ±1%; -55÷155°C
Tolerance: ±1%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...155°C
Max. operating voltage: 150V
Power: 0.125W
Resistance: 133kΩ
Type of resistor: thick film
Produkt ist nicht verfügbar
| CRCW25125R11FKEGHP |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 5.11Ω; 1.5W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 5.11Ω
Power: 1.5W
Tolerance: ±1%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 5.11Ω; 1.5W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 5.11Ω
Power: 1.5W
Tolerance: ±1%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Produkt ist nicht verfügbar
| SIR122DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 59.6A; Idm: 150A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 59.6A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 65.7W
Polarisation: unipolar
Gate charge: 44nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 59.6A; Idm: 150A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 59.6A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 65.7W
Polarisation: unipolar
Gate charge: 44nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Produkt ist nicht verfügbar
| SIR638ADP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.16mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.16mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BFC233868418 |
|
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1nF; THT; ±20%; 10mm; 1kVDC; 300VAC
Type of capacitor: polypropylene
Capacitance: 1nF
Operating voltage: 300V AC; 1kV DC
Body dimensions: 12.5x4x10mm
Mounting: THT
Terminal pitch: 10mm
Tolerance: ±20%
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1nF; THT; ±20%; 10mm; 1kVDC; 300VAC
Type of capacitor: polypropylene
Capacitance: 1nF
Operating voltage: 300V AC; 1kV DC
Body dimensions: 12.5x4x10mm
Mounting: THT
Terminal pitch: 10mm
Tolerance: ±20%
auf Bestellung 2451 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 69+ | 1.04 EUR |
| 109+ | 0.66 EUR |
| 166+ | 0.43 EUR |
| 175+ | 0.41 EUR |
| SMBJ60A-E3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 66.7V; 6.2A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 66.7V; 6.2A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
auf Bestellung 495 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 315+ | 0.23 EUR |
| 495+ | 0.14 EUR |
| SMBJ60D-M3/H |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 67.7V; 6.28A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 67.7V
Max. forward impulse current: 6.28A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 67.7V; 6.28A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 67.7V
Max. forward impulse current: 6.28A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
| SI2392ADS-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.1A; Idm: 8A; 1.6W; SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 3.1A
On-state resistance: 126mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 10.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 8A
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.1A; Idm: 8A; 1.6W; SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 3.1A
On-state resistance: 126mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 10.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 8A
Case: SOT23
Produkt ist nicht verfügbar
| SI4392ADY-T1-E3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| SI7172ADP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| SI7322ADN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| SIDR500EP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 421A; Idm: 500A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 421A
On-state resistance: 0.68mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 180nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: 500A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 421A; Idm: 500A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 421A
On-state resistance: 0.68mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 180nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: 500A
Produkt ist nicht verfügbar
| SI7121ADN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -50A; 17.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 17.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -50A; 17.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 17.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIA811ADJ-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -20V; 6.8W
Type of transistor: P-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -8A
Power dissipation: 6.8W
Gate-source voltage: ±8V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -20V; 6.8W
Type of transistor: P-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -8A
Power dissipation: 6.8W
Gate-source voltage: ±8V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SQ2361AEES-T1_GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.8A
Pulsed drain current: -11A
Power dissipation: 0.67W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 315mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.8A
Pulsed drain current: -11A
Power dissipation: 0.67W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 315mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
Produkt ist nicht verfügbar
| SQJ431AEP-T1_BE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -200V; -9.4A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -9.4A
Pulsed drain current: -60A
Power dissipation: 68W
Gate-source voltage: ±20V
On-state resistance: 763mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -200V; -9.4A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -9.4A
Pulsed drain current: -60A
Power dissipation: 68W
Gate-source voltage: ±20V
On-state resistance: 763mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| 1.5KE24A-E3/54 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 24V; 45.2A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 45.2A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 24V; 45.2A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 45.2A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
auf Bestellung 986 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 145+ | 0.5 EUR |
| 176+ | 0.41 EUR |
| 213+ | 0.34 EUR |
| 226+ | 0.32 EUR |
| TDCG1060M |
|
Hersteller: VISHAY
Category: 7-segment LED displays
Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd
Type of display: LED
Kind of display: 7-segment
Digit height: 10mm; 0.39"
Number of characters: 4
Colour: green
Luminosity: 2.8...4mcd
Common electrode: cathode
Dimensions: 40.2x12.8x7mm
Mounting: THT
Wavelength: 562...575nm
Operating current: 20mA
Operating voltage: 2...2.4V
Category: 7-segment LED displays
Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd
Type of display: LED
Kind of display: 7-segment
Digit height: 10mm; 0.39"
Number of characters: 4
Colour: green
Luminosity: 2.8...4mcd
Common electrode: cathode
Dimensions: 40.2x12.8x7mm
Mounting: THT
Wavelength: 562...575nm
Operating current: 20mA
Operating voltage: 2...2.4V
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 2.96 EUR |
| 27+ | 2.66 EUR |
| 34+ | 2.14 EUR |
| 36+ | 2.03 EUR |
| PRV6SAABGYB25105KA |
|
Hersteller: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 1MΩ; 1.5W; ±10%; 3.17mm; linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1MΩ
Power: 1.5W
Tolerance: ±10%
Characteristics: linear
Mechanical rotation angle: 300°
Operating temperature: -55...125°C
Track material: cermet
Electrical rotation angle: 270°
Mechanical durability: 50000 cycles
Temperature coefficient: 150ppm/°C
IP rating: IP67
Leads: for soldering
Shaft diameter: 3.17mm
Shaft length: 16mm
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 1MΩ; 1.5W; ±10%; 3.17mm; linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1MΩ
Power: 1.5W
Tolerance: ±10%
Characteristics: linear
Mechanical rotation angle: 300°
Operating temperature: -55...125°C
Track material: cermet
Electrical rotation angle: 270°
Mechanical durability: 50000 cycles
Temperature coefficient: 150ppm/°C
IP rating: IP67
Leads: for soldering
Shaft diameter: 3.17mm
Shaft length: 16mm
Produkt ist nicht verfügbar
| T18105KT10 |
|
Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear
Mounting: THT
Operating temperature: -55...125°C
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
Min. insulation resistance: 1TΩ
Power: 0.75W
Resistance: 1MΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear
Mounting: THT
Operating temperature: -55...125°C
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
Min. insulation resistance: 1TΩ
Power: 0.75W
Resistance: 1MΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
auf Bestellung 445 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 40+ | 1.8 EUR |
| 41+ | 1.76 EUR |
| 49+ | 1.47 EUR |
| 52+ | 1.39 EUR |
| T93YB105KT20 |
|
Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 1MΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T93YB
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard: 3/8"
Temperature coefficient: 100ppm/°C
Body dimensions: 9.8x9.8x5mm
Terminal pitch: 2.5x2.5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
IP rating: IP67
Torque: 1,5Ncm
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 1MΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T93YB
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard: 3/8"
Temperature coefficient: 100ppm/°C
Body dimensions: 9.8x9.8x5mm
Terminal pitch: 2.5x2.5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
IP rating: IP67
Torque: 1,5Ncm
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 28+ | 2.56 EUR |
| TS53YJ105MR10 |
|
Hersteller: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 1MΩ; 250mW; SMD; ±20%; linear
Mounting: SMD
Resistance: 1MΩ
Power: 0.25W
Tolerance: ±20%
Max. operating voltage: 200V
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
IP rating: IP67
Type of potentiometer: mounting
Characteristics: linear
Mechanical rotation angle: 270 ±10°
Electrical rotation angle: 220 ±15°
Torque: 1,5Ncm
Track material: cermet
Kind of potentiometer: single turn
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 1MΩ; 250mW; SMD; ±20%; linear
Mounting: SMD
Resistance: 1MΩ
Power: 0.25W
Tolerance: ±20%
Max. operating voltage: 200V
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
IP rating: IP67
Type of potentiometer: mounting
Characteristics: linear
Mechanical rotation angle: 270 ±10°
Electrical rotation angle: 220 ±15°
Torque: 1,5Ncm
Track material: cermet
Kind of potentiometer: single turn
auf Bestellung 487 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 23+ | 3.12 EUR |
| 32+ | 2.26 EUR |
| 46+ | 1.59 EUR |
| 48+ | 1.5 EUR |
| GSIB15A60-E3/45 |
|
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 200A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 200A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| SI4890DY-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 11A; Idm: 50A; 2.5W
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 50A
Drain-source voltage: 30V
Drain current: 11A
On-state resistance: 20mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 11A; Idm: 50A; 2.5W
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 50A
Drain-source voltage: 30V
Drain current: 11A
On-state resistance: 20mΩ
Produkt ist nicht verfügbar
| SIHFR9024-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIHFR9024TR-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI7421DN-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| SI7421DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| MAL205742102E3 |
|
Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 1mF; 200VDC; Ø30x50mm; ±20%
Mounting: SNAP-IN
Operating temperature: -40...85°C
Terminal pitch: 10mm
Tolerance: ±20%
Body dimensions: Ø30x50mm
Type of capacitor: electrolytic
Capacitance: 1mF
Operating voltage: 200V DC
Service life: 12000h
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 1mF; 200VDC; Ø30x50mm; ±20%
Mounting: SNAP-IN
Operating temperature: -40...85°C
Terminal pitch: 10mm
Tolerance: ±20%
Body dimensions: Ø30x50mm
Type of capacitor: electrolytic
Capacitance: 1mF
Operating voltage: 200V DC
Service life: 12000h
Produkt ist nicht verfügbar
| MAL225742102E3 |
|
Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 1mF; 200VDC; Ø25x45mm; ±20%
Type of capacitor: electrolytic
Capacitance: 1mF
Operating voltage: 200V DC
Service life: 5000h
Mounting: SNAP-IN
Terminal pitch: 10mm
Operating temperature: -40...85°C
Tolerance: ±20%
Body dimensions: Ø25x45mm
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 1mF; 200VDC; Ø25x45mm; ±20%
Type of capacitor: electrolytic
Capacitance: 1mF
Operating voltage: 200V DC
Service life: 5000h
Mounting: SNAP-IN
Terminal pitch: 10mm
Operating temperature: -40...85°C
Tolerance: ±20%
Body dimensions: Ø25x45mm
Produkt ist nicht verfügbar
| SIHH26N60E-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 50A; 202W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 202W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 50A; 202W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 202W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| ZSC00AK6811HARL |
|
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 50VDC; Ø16x16.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 680µF
Operating voltage: 50V DC
Body dimensions: Ø16x16.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 50VDC; Ø16x16.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 680µF
Operating voltage: 50V DC
Body dimensions: Ø16x16.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Produkt ist nicht verfügbar
| ZSC00AM6811JARL |
|
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 63VDC; Ø16x21.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 680µF
Operating voltage: 63V DC
Body dimensions: Ø16x21.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 63VDC; Ø16x21.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 680µF
Operating voltage: 63V DC
Body dimensions: Ø16x21.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Produkt ist nicht verfügbar
| ZSC00AN6811JARL |
|
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 63VDC; Ø18x16.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 680µF
Operating voltage: 63V DC
Body dimensions: Ø18x16.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 63VDC; Ø18x16.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 680µF
Operating voltage: 63V DC
Body dimensions: Ø18x16.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Produkt ist nicht verfügbar
| ZSC00AP6811KARL |
|
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 80VDC; Ø18x21.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 680µF
Operating voltage: 80V DC
Body dimensions: Ø18x21.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 80VDC; Ø18x21.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 680µF
Operating voltage: 80V DC
Body dimensions: Ø18x21.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Produkt ist nicht verfügbar
| ZSC00XM6810JARL |
|
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 6.3VDC; Ø10x7.7mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 680µF
Operating voltage: 6.3V DC
Body dimensions: Ø10x7.7mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 6.3VDC; Ø10x7.7mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 680µF
Operating voltage: 6.3V DC
Body dimensions: Ø10x7.7mm
Tolerance: ±20%
Operating temperature: -55...105°C
Produkt ist nicht verfügbar