Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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GSC00AF3301JARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 33uF; 63VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Capacitance: 33µF Operating voltage: 63V DC Capacitors series: GSC Mounting: SMD Tolerance: ±20% Operating temperature: -55...105°C Dimensions: 8x10mm Height: 10mm Nominal life: 2000h |
auf Bestellung 890 Stücke: Lieferzeit 14-21 Tag (e) |
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GSC00AF3301JTFL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 33uF; 63VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Capacitance: 33µF Operating voltage: 63V DC Capacitors series: GSC Mounting: SMD Tolerance: ±20% Operating temperature: -55...105°C Dimensions: 8x10mm Height: 10mm Nominal life: 2000h |
Produkt ist nicht verfügbar |
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VJ1206Y152KXGTW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 1.5nF; 1kV; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 1.5nF Operating voltage: 1kV Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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VS-50TPS12L-M3 | VISHAY |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 45/100mA; TO247AD-3; THT Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 45/100mA Case: TO247AD-3 Mounting: THT Kind of package: tube Max. forward impulse current: 530A |
auf Bestellung 196 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHFR120-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Power dissipation: 42W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 0.27Ω Drain current: 4.9A Gate charge: 16nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 31A |
Produkt ist nicht verfügbar |
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SIHFR120TR-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Power dissipation: 42W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 0.27Ω Drain current: 4.9A Gate charge: 16nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 31A |
Produkt ist nicht verfügbar |
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SIHFR120TRL-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Power dissipation: 42W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 0.27Ω Drain current: 4.9A Gate charge: 16nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 31A |
Produkt ist nicht verfügbar |
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VS-12FR120 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1.2kV; 1.26V; 12A; anode to stud; DO203AA,DO4 Type of diode: rectifying Max. off-state voltage: 1.2kV Max. forward voltage: 1.26V Load current: 12A Max. load current: 19A Semiconductor structure: anode to stud Case: DO4; DO203AA Fastening thread: 10-32UNF-2A Mounting: screw type Max. forward impulse current: 265A Manufacturer series: VS-12F(R) Kind of package: bulk |
Produkt ist nicht verfügbar |
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VS-40HFR120 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1.2kV; 1.3V; 40A; anode to stud; DO203AB,DO5 Type of diode: rectifying Max. off-state voltage: 1.2kV Max. forward voltage: 1.3V Load current: 40A Max. load current: 62A Semiconductor structure: anode to stud Case: DO5; DO203AB Fastening thread: 1/4"-28UNF-2A Mounting: screw type Max. forward impulse current: 570A Manufacturer series: VS-4xHF(R) Kind of package: bulk |
auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
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VS-40HFR120M | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1.2kV; 1.3V; 40A; anode to stud; DO203AB,DO5 Type of diode: rectifying Max. off-state voltage: 1.2kV Max. forward voltage: 1.3V Load current: 40A Max. load current: 62A Semiconductor structure: anode to stud Case: DO5; DO203AB Fastening thread: M6x1 Mounting: screw type Max. forward impulse current: 570A Manufacturer series: VS-4xHF(R) Kind of package: bulk |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
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VS-85HFR120 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1.2kV; 1.2V; 85A; anode to stud; DO203AB,DO5 Type of diode: rectifying Max. off-state voltage: 1.2kV Max. forward voltage: 1.2V Load current: 85A Max. load current: 133A Semiconductor structure: anode to stud Case: DO5; DO203AB Fastening thread: 1/4"-28UNF-2A Mounting: screw type Max. forward impulse current: 1.45kA Manufacturer series: VS-8xHF(R) Kind of package: bulk |
auf Bestellung 66 Stücke: Lieferzeit 14-21 Tag (e) |
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VS-87HFR120 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1.2kV; 1.2V; 85A; anode to stud; DO203AB,DO5 Type of diode: rectifying Max. off-state voltage: 1.2kV Max. forward voltage: 1.2V Load current: 85A Max. load current: 133A Semiconductor structure: anode to stud Case: DO5; DO203AB Fastening thread: 1/4"-28UNF-2A Mounting: screw type Features of semiconductor devices: isolated lead - silicone sleeve Max. forward impulse current: 1.45kA Manufacturer series: VS-8xHF(R) Kind of package: bulk |
Produkt ist nicht verfügbar |
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CNY17-3X017 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD6 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: SMD6 Conform to the norm: UL; VDE Turn-on time: 4.2µs Turn-off time: 23µs Max. off-state voltage: 6V Manufacturer series: CNY17 |
Produkt ist nicht verfügbar |
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CNY17-3X017T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD6 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: SMD6 Conform to the norm: UL; VDE Turn-on time: 4.2µs Turn-off time: 23µs Max. off-state voltage: 6V Manufacturer series: CNY17 |
Produkt ist nicht verfügbar |
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AC07000006808JAC00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 6.8Ω; 7W; ±5%; Ø7.5x26mm; -50÷250°C Type of resistor: wire-wound Mounting: THT Resistance: 6.8Ω Power: 7W Tolerance: ±5% Body dimensions: Ø7.5x26mm Leads dimensions: Ø0.8x25mm Operating temperature: -50...250°C Resistor features: non-flammable Temperature coefficient: 80ppm/°C Leads: axial |
Produkt ist nicht verfügbar |
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VOM617A-2X001T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 63-125%@5mA Collector-emitter voltage: 80V Case: SOP4 Conform to the norm: UL; VDE Turn-on time: 9µs Turn-off time: 15µs Max. off-state voltage: 6V Manufacturer series: VOM617A |
Produkt ist nicht verfügbar |
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VOM617A-4X001T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 160-320%@5mA Collector-emitter voltage: 80V Case: SOP4 Conform to the norm: UL; VDE Turn-on time: 9µs Turn-off time: 15µs Max. off-state voltage: 6V Manufacturer series: VOM617A |
Produkt ist nicht verfügbar |
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VOMA617A-X001T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 50-600%@5mA Collector-emitter voltage: 80V Case: SOP4 Conform to the norm: UL; VDE Turn-on time: 2µs Turn-off time: 10.6µs Max. off-state voltage: 5V Manufacturer series: VOMA617A |
Produkt ist nicht verfügbar |
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VOMA617A-3X001T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 100-200%@5mA Collector-emitter voltage: 80V Case: SOP4 Conform to the norm: UL; VDE Turn-on time: 2µs Turn-off time: 10.6µs Max. off-state voltage: 5V Manufacturer series: VOMA617A |
Produkt ist nicht verfügbar |
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VOMA617A-4X001T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 160-320%@5mA Collector-emitter voltage: 80V Case: SOP4 Conform to the norm: UL; VDE Turn-on time: 2µs Turn-off time: 10.6µs Max. off-state voltage: 5V Manufacturer series: VOMA617A |
Produkt ist nicht verfügbar |
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VOMA617A-8X001T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 130-260%@5mA Collector-emitter voltage: 80V Case: SOP4 Conform to the norm: UL; VDE Turn-on time: 2µs Turn-off time: 10.6µs Max. off-state voltage: 5V Manufacturer series: VOMA617A |
Produkt ist nicht verfügbar |
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VOM3053T | VISHAY |
Category: Optotriacs Description: Optotriac; 3.75kV; Uout: 600V; SOP4; Ch: 1; VOM3053 Mounting: SMD Case: SOP4 Manufacturer series: VOM3053 Type of optocoupler: optotriac Max. off-state voltage: 6V Output voltage: 600V Number of channels: 1 Kind of output: triac; without zero voltage crossing driver Insulation voltage: 3.75kV Conform to the norm: UL Trigger current: 5mA |
Produkt ist nicht verfügbar |
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VOM160N-X001T | VISHAY |
Category: Optotriacs Description: Optotriac; 3.75kV; Uout: 600V; SOP4; Ch: 1; VOM160 Mounting: SMD Case: SOP4 Conform to the norm: UL; VDE Trigger current: 5mA Manufacturer series: VOM160 Type of optocoupler: optotriac Max. off-state voltage: 6V Output voltage: 600V Number of channels: 1 Kind of output: triac; without zero voltage crossing driver Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
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VOM160NT | VISHAY |
Category: Optotriacs Description: Optotriac; 3.75kV; Uout: 600V; SOP4; Ch: 1; VOM160 Mounting: SMD Case: SOP4 Conform to the norm: UL Trigger current: 5mA Manufacturer series: VOM160 Type of optocoupler: optotriac Max. off-state voltage: 6V Output voltage: 600V Number of channels: 1 Kind of output: triac; without zero voltage crossing driver Insulation voltage: 3.75kV |
auf Bestellung 1993 Stücke: Lieferzeit 14-21 Tag (e) |
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VOM160RT | VISHAY |
Category: Optotriacs Description: Optotriac; 3.75kV; Uout: 600V; SOP4; Ch: 1; VOM160 Type of optocoupler: optotriac Insulation voltage: 3.75kV Output voltage: 600V Kind of output: triac; without zero voltage crossing driver Case: SOP4 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: VOM160 Conform to the norm: UL |
Produkt ist nicht verfügbar |
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VJ1210Y476KXQTW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 47uF; 10V; X7R; ±10%; SMD; 1210 Type of capacitor: ceramic Mounting: SMD Capacitance: 47µF Operating voltage: 10V Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 1210 Case - mm: 3225 Dielectric: X7R |
Produkt ist nicht verfügbar |
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CRCW04022K20JNTDBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 2.2kΩ; 62.5mW; ±5%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 2.2kΩ Power: 62.5mW Tolerance: ±5% Max. operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C |
auf Bestellung 8706 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW06031M80FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 1.8MΩ; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 1.8MΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW06033K74FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 3.74kΩ; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 3.74kΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
auf Bestellung 1400 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW06033K83FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 3.83kΩ; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 3.83kΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
auf Bestellung 1200 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW06033K92FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 3.92kΩ; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 3.92kΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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TS63Y101KT20 | VISHAY |
Category: Multiturn SMD trimmers Description: Potentiometer: mounting; horizontal,multiturn; 100Ω; 250mW; SMD Mounting: SMD Resistance: 100Ω Power: 0.25W Tolerance: ±10% Max. operating voltage: 250V Body dimensions: 6.85x6.85x5mm Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Characteristics: linear Torque: 1,5Ncm Track material: cermet Kind of potentiometer: horizontal; multiturn IP rating: IP67 Type of potentiometer: mounting Number of mechanical turns: 15 ±5 Number of electrical turns: 13 ±2 |
Produkt ist nicht verfügbar |
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TS63Y202K | VISHAY |
Category: Multiturn SMD trimmers Description: Potentiometer: mounting; horizontal,multiturn; 2kΩ; 250mW; SMD Mounting: SMD Resistance: 2kΩ Power: 0.25W Tolerance: ±10% Type of potentiometer: mounting Track material: cermet Kind of potentiometer: horizontal; multiturn |
Produkt ist nicht verfügbar |
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TS63Y503KT20 | VISHAY |
Category: Multiturn SMD trimmers Description: Potentiometer: mounting; horizontal,multiturn; 50kΩ; 250mW; SMD Type of potentiometer: mounting Kind of potentiometer: horizontal; multiturn Resistance: 50kΩ Power: 0.25W Mounting: SMD Tolerance: ±10% Temperature coefficient: 100ppm/°C Characteristics: linear Track material: cermet Operating temperature: -55...155°C Body dimensions: 6.85x6.85x5mm Number of electrical turns: 13 ±2 Max. operating voltage: 250V IP rating: IP67 Number of mechanical turns: 15 ±5 Torque: 1,5Ncm |
auf Bestellung 82 Stücke: Lieferzeit 14-21 Tag (e) |
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TS63Y502KT20 | VISHAY |
Category: Multiturn SMD trimmers Description: Potentiometer: mounting; horizontal,multiturn; 5kΩ; 250mW; SMD Type of potentiometer: mounting Kind of potentiometer: horizontal; multiturn Resistance: 5kΩ Power: 0.25W Mounting: SMD Tolerance: ±10% Temperature coefficient: 100ppm/°C Characteristics: linear Track material: cermet Operating temperature: -55...155°C Body dimensions: 6.85x6.85x5mm Number of electrical turns: 13 ±2 Max. operating voltage: 250V IP rating: IP67 Number of mechanical turns: 15 ±5 Torque: 1,5Ncm |
auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
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SML4746-E3/61 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SMA; single diode; 5uA Semiconductor structure: single diode Zener voltage: 18V Leakage current: 5µA Power dissipation: 1W Kind of package: reel; tape Type of diode: Zener Mounting: SMD Case: SMA Tolerance: ±10% |
Produkt ist nicht verfügbar |
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SML4746A-E3/61 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SMA; single diode; 5uA Semiconductor structure: single diode Zener voltage: 18V Leakage current: 5µA Power dissipation: 1W Kind of package: reel; tape Type of diode: Zener Mounting: SMD Case: SMA Tolerance: ±5% |
Produkt ist nicht verfügbar |
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GSOT12C-E3-08 | VISHAY |
Category: Transil diodes - arrays Description: Diode: TVS array; 15V; 12A; 337W; double,common anode; SOT23; Ch: 2 Type of diode: TVS array Peak pulse power dissipation: 337W Max. off-state voltage: 12V Breakdown voltage: 15V Max. forward impulse current: 12A Semiconductor structure: common anode; double Case: SOT23 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 2 |
auf Bestellung 1484 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI720GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 2.6A; Idm: 10A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 2.6A Pulsed drain current: 10A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFI730GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 3.7A; Idm: 15A; 35W; TO220FP Mounting: THT Kind of package: tube Case: TO220FP Power dissipation: 35W Polarisation: unipolar Gate charge: 38nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 15A Drain-source voltage: 400V Drain current: 3.7A On-state resistance: 1Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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VO3150A | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: IGBT driver; Uinsul: 5.3kV; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: IGBT driver Insulation voltage: 5.3kV Case: DIP8 Conform to the norm: UL Turn-on time: 0.1µs Turn-off time: 0.1µs Max. off-state voltage: 5V Manufacturer series: VO3150 |
Produkt ist nicht verfügbar |
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MBB02070C3929FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 39.2Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Tolerance: ±1% Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C Max. operating voltage: 350V Leads: axial Mounting: THT Operating temperature: -55...155°C Type of resistor: metal film Power: 0.6W Resistance: 39.2Ω |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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Si4408DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21A; Idm: 60A; 3.5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 21A Pulsed drain current: 60A Power dissipation: 3.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SI4408DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21A; Idm: 60A; 3.5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 21A Pulsed drain current: 60A Power dissipation: 3.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SI4420BDY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 13.5A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 13.5A Pulsed drain current: 50A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SI4420BDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 13.5A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 13.5A Pulsed drain current: 50A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SI4421DY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -40A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -14A Pulsed drain current: -40A Power dissipation: 3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 125nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SI4421DY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -40A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -14A Pulsed drain current: -40A Power dissipation: 3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 125nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SI4423DY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -14A Pulsed drain current: -50A Power dissipation: 3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 175nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SI4423DY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -14A Pulsed drain current: -50A Power dissipation: 3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 175nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SI4425FDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18.3A; Idm: -70A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -18.3A Pulsed drain current: -70A Power dissipation: 4.8W Case: SO8 On-state resistance: 16mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SI4426DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 8.5A; Idm: 40A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 8.5A Pulsed drain current: 40A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 35mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SI4434ADY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 4.1A; Idm: 25A; 6W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 4.1A Pulsed drain current: 25A Power dissipation: 6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 16.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SI4434DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 3A; Idm: 30A; 3.1W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 3A Pulsed drain current: 30A Power dissipation: 3.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 162mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SI4434DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 3A; Idm: 30A; 3.1W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 3A Pulsed drain current: 30A Power dissipation: 3.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 162mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SI4436DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 25A; 3.2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Pulsed drain current: 25A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SI4436DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.8A; 3.2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.8A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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Si4442DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 22A; Idm: 60A; 3.5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Pulsed drain current: 60A Power dissipation: 3.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SI4442DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 22A; Idm: 60A; 3.5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Pulsed drain current: 60A Power dissipation: 3.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SI4447ADY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -7.2A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -7.2A Pulsed drain current: -20A Power dissipation: 4.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 62mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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GSC00AF3301JARL |
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 33uF; 63VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Capacitance: 33µF
Operating voltage: 63V DC
Capacitors series: GSC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 8x10mm
Height: 10mm
Nominal life: 2000h
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 33uF; 63VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Capacitance: 33µF
Operating voltage: 63V DC
Capacitors series: GSC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 8x10mm
Height: 10mm
Nominal life: 2000h
auf Bestellung 890 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
270+ | 0.27 EUR |
420+ | 0.17 EUR |
550+ | 0.13 EUR |
700+ | 0.1 EUR |
730+ | 0.099 EUR |
GSC00AF3301JTFL |
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 33uF; 63VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Capacitance: 33µF
Operating voltage: 63V DC
Capacitors series: GSC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 8x10mm
Height: 10mm
Nominal life: 2000h
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 33uF; 63VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Capacitance: 33µF
Operating voltage: 63V DC
Capacitors series: GSC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 8x10mm
Height: 10mm
Nominal life: 2000h
Produkt ist nicht verfügbar
VJ1206Y152KXGTW1BC |
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1.5nF; 1kV; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 1.5nF
Operating voltage: 1kV
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1.5nF; 1kV; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 1.5nF
Operating voltage: 1kV
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
VS-50TPS12L-M3 |
Hersteller: VISHAY
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 45/100mA; TO247AD-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 45/100mA
Case: TO247AD-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 530A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 45/100mA; TO247AD-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 45/100mA
Case: TO247AD-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 530A
auf Bestellung 196 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 5.65 EUR |
17+ | 4.3 EUR |
18+ | 4.08 EUR |
SIHFR120-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Drain current: 4.9A
Gate charge: 16nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Drain current: 4.9A
Gate charge: 16nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
Produkt ist nicht verfügbar
SIHFR120TR-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Drain current: 4.9A
Gate charge: 16nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Drain current: 4.9A
Gate charge: 16nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
Produkt ist nicht verfügbar
SIHFR120TRL-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Drain current: 4.9A
Gate charge: 16nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Drain current: 4.9A
Gate charge: 16nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
Produkt ist nicht verfügbar
VS-12FR120 |
Hersteller: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.2kV; 1.26V; 12A; anode to stud; DO203AA,DO4
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.26V
Load current: 12A
Max. load current: 19A
Semiconductor structure: anode to stud
Case: DO4; DO203AA
Fastening thread: 10-32UNF-2A
Mounting: screw type
Max. forward impulse current: 265A
Manufacturer series: VS-12F(R)
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.2kV; 1.26V; 12A; anode to stud; DO203AA,DO4
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.26V
Load current: 12A
Max. load current: 19A
Semiconductor structure: anode to stud
Case: DO4; DO203AA
Fastening thread: 10-32UNF-2A
Mounting: screw type
Max. forward impulse current: 265A
Manufacturer series: VS-12F(R)
Kind of package: bulk
Produkt ist nicht verfügbar
VS-40HFR120 |
Hersteller: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.2kV; 1.3V; 40A; anode to stud; DO203AB,DO5
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.3V
Load current: 40A
Max. load current: 62A
Semiconductor structure: anode to stud
Case: DO5; DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 570A
Manufacturer series: VS-4xHF(R)
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.2kV; 1.3V; 40A; anode to stud; DO203AB,DO5
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.3V
Load current: 40A
Max. load current: 62A
Semiconductor structure: anode to stud
Case: DO5; DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 570A
Manufacturer series: VS-4xHF(R)
Kind of package: bulk
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 9.15 EUR |
12+ | 5.98 EUR |
VS-40HFR120M |
Hersteller: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.2kV; 1.3V; 40A; anode to stud; DO203AB,DO5
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.3V
Load current: 40A
Max. load current: 62A
Semiconductor structure: anode to stud
Case: DO5; DO203AB
Fastening thread: M6x1
Mounting: screw type
Max. forward impulse current: 570A
Manufacturer series: VS-4xHF(R)
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.2kV; 1.3V; 40A; anode to stud; DO203AB,DO5
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.3V
Load current: 40A
Max. load current: 62A
Semiconductor structure: anode to stud
Case: DO5; DO203AB
Fastening thread: M6x1
Mounting: screw type
Max. forward impulse current: 570A
Manufacturer series: VS-4xHF(R)
Kind of package: bulk
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 18.79 EUR |
VS-85HFR120 |
Hersteller: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.2kV; 1.2V; 85A; anode to stud; DO203AB,DO5
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.2V
Load current: 85A
Max. load current: 133A
Semiconductor structure: anode to stud
Case: DO5; DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1.45kA
Manufacturer series: VS-8xHF(R)
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.2kV; 1.2V; 85A; anode to stud; DO203AB,DO5
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.2V
Load current: 85A
Max. load current: 133A
Semiconductor structure: anode to stud
Case: DO5; DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1.45kA
Manufacturer series: VS-8xHF(R)
Kind of package: bulk
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 15.49 EUR |
7+ | 10.71 EUR |
8+ | 10.12 EUR |
VS-87HFR120 |
Hersteller: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.2kV; 1.2V; 85A; anode to stud; DO203AB,DO5
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.2V
Load current: 85A
Max. load current: 133A
Semiconductor structure: anode to stud
Case: DO5; DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Features of semiconductor devices: isolated lead - silicone sleeve
Max. forward impulse current: 1.45kA
Manufacturer series: VS-8xHF(R)
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.2kV; 1.2V; 85A; anode to stud; DO203AB,DO5
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.2V
Load current: 85A
Max. load current: 133A
Semiconductor structure: anode to stud
Case: DO5; DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Features of semiconductor devices: isolated lead - silicone sleeve
Max. forward impulse current: 1.45kA
Manufacturer series: VS-8xHF(R)
Kind of package: bulk
Produkt ist nicht verfügbar
CNY17-3X017 |
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: SMD6
Conform to the norm: UL; VDE
Turn-on time: 4.2µs
Turn-off time: 23µs
Max. off-state voltage: 6V
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: SMD6
Conform to the norm: UL; VDE
Turn-on time: 4.2µs
Turn-off time: 23µs
Max. off-state voltage: 6V
Manufacturer series: CNY17
Produkt ist nicht verfügbar
CNY17-3X017T |
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: SMD6
Conform to the norm: UL; VDE
Turn-on time: 4.2µs
Turn-off time: 23µs
Max. off-state voltage: 6V
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: SMD6
Conform to the norm: UL; VDE
Turn-on time: 4.2µs
Turn-off time: 23µs
Max. off-state voltage: 6V
Manufacturer series: CNY17
Produkt ist nicht verfügbar
AC07000006808JAC00 |
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 6.8Ω; 7W; ±5%; Ø7.5x26mm; -50÷250°C
Type of resistor: wire-wound
Mounting: THT
Resistance: 6.8Ω
Power: 7W
Tolerance: ±5%
Body dimensions: Ø7.5x26mm
Leads dimensions: Ø0.8x25mm
Operating temperature: -50...250°C
Resistor features: non-flammable
Temperature coefficient: 80ppm/°C
Leads: axial
Category: Power resistors
Description: Resistor: wire-wound; THT; 6.8Ω; 7W; ±5%; Ø7.5x26mm; -50÷250°C
Type of resistor: wire-wound
Mounting: THT
Resistance: 6.8Ω
Power: 7W
Tolerance: ±5%
Body dimensions: Ø7.5x26mm
Leads dimensions: Ø0.8x25mm
Operating temperature: -50...250°C
Resistor features: non-flammable
Temperature coefficient: 80ppm/°C
Leads: axial
Produkt ist nicht verfügbar
VOM617A-2X001T |
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 63-125%@5mA
Collector-emitter voltage: 80V
Case: SOP4
Conform to the norm: UL; VDE
Turn-on time: 9µs
Turn-off time: 15µs
Max. off-state voltage: 6V
Manufacturer series: VOM617A
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 63-125%@5mA
Collector-emitter voltage: 80V
Case: SOP4
Conform to the norm: UL; VDE
Turn-on time: 9µs
Turn-off time: 15µs
Max. off-state voltage: 6V
Manufacturer series: VOM617A
Produkt ist nicht verfügbar
VOM617A-4X001T |
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 160-320%@5mA
Collector-emitter voltage: 80V
Case: SOP4
Conform to the norm: UL; VDE
Turn-on time: 9µs
Turn-off time: 15µs
Max. off-state voltage: 6V
Manufacturer series: VOM617A
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 160-320%@5mA
Collector-emitter voltage: 80V
Case: SOP4
Conform to the norm: UL; VDE
Turn-on time: 9µs
Turn-off time: 15µs
Max. off-state voltage: 6V
Manufacturer series: VOM617A
Produkt ist nicht verfügbar
VOMA617A-X001T |
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-600%@5mA
Collector-emitter voltage: 80V
Case: SOP4
Conform to the norm: UL; VDE
Turn-on time: 2µs
Turn-off time: 10.6µs
Max. off-state voltage: 5V
Manufacturer series: VOMA617A
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-600%@5mA
Collector-emitter voltage: 80V
Case: SOP4
Conform to the norm: UL; VDE
Turn-on time: 2µs
Turn-off time: 10.6µs
Max. off-state voltage: 5V
Manufacturer series: VOMA617A
Produkt ist nicht verfügbar
VOMA617A-3X001T |
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 100-200%@5mA
Collector-emitter voltage: 80V
Case: SOP4
Conform to the norm: UL; VDE
Turn-on time: 2µs
Turn-off time: 10.6µs
Max. off-state voltage: 5V
Manufacturer series: VOMA617A
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 100-200%@5mA
Collector-emitter voltage: 80V
Case: SOP4
Conform to the norm: UL; VDE
Turn-on time: 2µs
Turn-off time: 10.6µs
Max. off-state voltage: 5V
Manufacturer series: VOMA617A
Produkt ist nicht verfügbar
VOMA617A-4X001T |
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 160-320%@5mA
Collector-emitter voltage: 80V
Case: SOP4
Conform to the norm: UL; VDE
Turn-on time: 2µs
Turn-off time: 10.6µs
Max. off-state voltage: 5V
Manufacturer series: VOMA617A
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 160-320%@5mA
Collector-emitter voltage: 80V
Case: SOP4
Conform to the norm: UL; VDE
Turn-on time: 2µs
Turn-off time: 10.6µs
Max. off-state voltage: 5V
Manufacturer series: VOMA617A
Produkt ist nicht verfügbar
VOMA617A-8X001T |
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 130-260%@5mA
Collector-emitter voltage: 80V
Case: SOP4
Conform to the norm: UL; VDE
Turn-on time: 2µs
Turn-off time: 10.6µs
Max. off-state voltage: 5V
Manufacturer series: VOMA617A
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 130-260%@5mA
Collector-emitter voltage: 80V
Case: SOP4
Conform to the norm: UL; VDE
Turn-on time: 2µs
Turn-off time: 10.6µs
Max. off-state voltage: 5V
Manufacturer series: VOMA617A
Produkt ist nicht verfügbar
VOM3053T |
Hersteller: VISHAY
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 600V; SOP4; Ch: 1; VOM3053
Mounting: SMD
Case: SOP4
Manufacturer series: VOM3053
Type of optocoupler: optotriac
Max. off-state voltage: 6V
Output voltage: 600V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 3.75kV
Conform to the norm: UL
Trigger current: 5mA
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 600V; SOP4; Ch: 1; VOM3053
Mounting: SMD
Case: SOP4
Manufacturer series: VOM3053
Type of optocoupler: optotriac
Max. off-state voltage: 6V
Output voltage: 600V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 3.75kV
Conform to the norm: UL
Trigger current: 5mA
Produkt ist nicht verfügbar
VOM160N-X001T |
Hersteller: VISHAY
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 600V; SOP4; Ch: 1; VOM160
Mounting: SMD
Case: SOP4
Conform to the norm: UL; VDE
Trigger current: 5mA
Manufacturer series: VOM160
Type of optocoupler: optotriac
Max. off-state voltage: 6V
Output voltage: 600V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 3.75kV
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 600V; SOP4; Ch: 1; VOM160
Mounting: SMD
Case: SOP4
Conform to the norm: UL; VDE
Trigger current: 5mA
Manufacturer series: VOM160
Type of optocoupler: optotriac
Max. off-state voltage: 6V
Output voltage: 600V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
VOM160NT |
Hersteller: VISHAY
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 600V; SOP4; Ch: 1; VOM160
Mounting: SMD
Case: SOP4
Conform to the norm: UL
Trigger current: 5mA
Manufacturer series: VOM160
Type of optocoupler: optotriac
Max. off-state voltage: 6V
Output voltage: 600V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 3.75kV
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 600V; SOP4; Ch: 1; VOM160
Mounting: SMD
Case: SOP4
Conform to the norm: UL
Trigger current: 5mA
Manufacturer series: VOM160
Type of optocoupler: optotriac
Max. off-state voltage: 6V
Output voltage: 600V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 3.75kV
auf Bestellung 1993 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
88+ | 0.82 EUR |
129+ | 0.56 EUR |
140+ | 0.51 EUR |
168+ | 0.43 EUR |
178+ | 0.4 EUR |
VOM160RT |
Hersteller: VISHAY
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 600V; SOP4; Ch: 1; VOM160
Type of optocoupler: optotriac
Insulation voltage: 3.75kV
Output voltage: 600V
Kind of output: triac; without zero voltage crossing driver
Case: SOP4
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: VOM160
Conform to the norm: UL
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 600V; SOP4; Ch: 1; VOM160
Type of optocoupler: optotriac
Insulation voltage: 3.75kV
Output voltage: 600V
Kind of output: triac; without zero voltage crossing driver
Case: SOP4
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: VOM160
Conform to the norm: UL
Produkt ist nicht verfügbar
VJ1210Y476KXQTW1BC |
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 47uF; 10V; X7R; ±10%; SMD; 1210
Type of capacitor: ceramic
Mounting: SMD
Capacitance: 47µF
Operating voltage: 10V
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 1210
Case - mm: 3225
Dielectric: X7R
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 47uF; 10V; X7R; ±10%; SMD; 1210
Type of capacitor: ceramic
Mounting: SMD
Capacitance: 47µF
Operating voltage: 10V
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 1210
Case - mm: 3225
Dielectric: X7R
Produkt ist nicht verfügbar
CRCW04022K20JNTDBC |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 2.2kΩ; 62.5mW; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 2.2kΩ
Power: 62.5mW
Tolerance: ±5%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 2.2kΩ; 62.5mW; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 2.2kΩ
Power: 62.5mW
Tolerance: ±5%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
auf Bestellung 8706 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4700+ | 0.015 EUR |
CRCW06031M80FKTABC |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 1.8MΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 1.8MΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 1.8MΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 1.8MΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
200+ | 0.36 EUR |
CRCW06033K74FKTABC |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.74kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 3.74kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.74kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 3.74kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
auf Bestellung 1400 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1400+ | 0.051 EUR |
CRCW06033K83FKTABC |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.83kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 3.83kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.83kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 3.83kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
auf Bestellung 1200 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1200+ | 0.06 EUR |
CRCW06033K92FKTABC |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.92kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 3.92kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.92kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 3.92kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
800+ | 0.089 EUR |
TS63Y101KT20 |
Hersteller: VISHAY
Category: Multiturn SMD trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 100Ω; 250mW; SMD
Mounting: SMD
Resistance: 100Ω
Power: 0.25W
Tolerance: ±10%
Max. operating voltage: 250V
Body dimensions: 6.85x6.85x5mm
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Characteristics: linear
Torque: 1,5Ncm
Track material: cermet
Kind of potentiometer: horizontal; multiturn
IP rating: IP67
Type of potentiometer: mounting
Number of mechanical turns: 15 ±5
Number of electrical turns: 13 ±2
Category: Multiturn SMD trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 100Ω; 250mW; SMD
Mounting: SMD
Resistance: 100Ω
Power: 0.25W
Tolerance: ±10%
Max. operating voltage: 250V
Body dimensions: 6.85x6.85x5mm
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Characteristics: linear
Torque: 1,5Ncm
Track material: cermet
Kind of potentiometer: horizontal; multiturn
IP rating: IP67
Type of potentiometer: mounting
Number of mechanical turns: 15 ±5
Number of electrical turns: 13 ±2
Produkt ist nicht verfügbar
TS63Y202K |
Hersteller: VISHAY
Category: Multiturn SMD trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 2kΩ; 250mW; SMD
Mounting: SMD
Resistance: 2kΩ
Power: 0.25W
Tolerance: ±10%
Type of potentiometer: mounting
Track material: cermet
Kind of potentiometer: horizontal; multiturn
Category: Multiturn SMD trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 2kΩ; 250mW; SMD
Mounting: SMD
Resistance: 2kΩ
Power: 0.25W
Tolerance: ±10%
Type of potentiometer: mounting
Track material: cermet
Kind of potentiometer: horizontal; multiturn
Produkt ist nicht verfügbar
TS63Y503KT20 |
Hersteller: VISHAY
Category: Multiturn SMD trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 50kΩ; 250mW; SMD
Type of potentiometer: mounting
Kind of potentiometer: horizontal; multiturn
Resistance: 50kΩ
Power: 0.25W
Mounting: SMD
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
Characteristics: linear
Track material: cermet
Operating temperature: -55...155°C
Body dimensions: 6.85x6.85x5mm
Number of electrical turns: 13 ±2
Max. operating voltage: 250V
IP rating: IP67
Number of mechanical turns: 15 ±5
Torque: 1,5Ncm
Category: Multiturn SMD trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 50kΩ; 250mW; SMD
Type of potentiometer: mounting
Kind of potentiometer: horizontal; multiturn
Resistance: 50kΩ
Power: 0.25W
Mounting: SMD
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
Characteristics: linear
Track material: cermet
Operating temperature: -55...155°C
Body dimensions: 6.85x6.85x5mm
Number of electrical turns: 13 ±2
Max. operating voltage: 250V
IP rating: IP67
Number of mechanical turns: 15 ±5
Torque: 1,5Ncm
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 3.75 EUR |
26+ | 2.77 EUR |
28+ | 2.62 EUR |
TS63Y502KT20 |
Hersteller: VISHAY
Category: Multiturn SMD trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 5kΩ; 250mW; SMD
Type of potentiometer: mounting
Kind of potentiometer: horizontal; multiturn
Resistance: 5kΩ
Power: 0.25W
Mounting: SMD
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
Characteristics: linear
Track material: cermet
Operating temperature: -55...155°C
Body dimensions: 6.85x6.85x5mm
Number of electrical turns: 13 ±2
Max. operating voltage: 250V
IP rating: IP67
Number of mechanical turns: 15 ±5
Torque: 1,5Ncm
Category: Multiturn SMD trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 5kΩ; 250mW; SMD
Type of potentiometer: mounting
Kind of potentiometer: horizontal; multiturn
Resistance: 5kΩ
Power: 0.25W
Mounting: SMD
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
Characteristics: linear
Track material: cermet
Operating temperature: -55...155°C
Body dimensions: 6.85x6.85x5mm
Number of electrical turns: 13 ±2
Max. operating voltage: 250V
IP rating: IP67
Number of mechanical turns: 15 ±5
Torque: 1,5Ncm
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 4.53 EUR |
17+ | 4.28 EUR |
25+ | 2.96 EUR |
26+ | 2.8 EUR |
SML4746-E3/61 |
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SMA; single diode; 5uA
Semiconductor structure: single diode
Zener voltage: 18V
Leakage current: 5µA
Power dissipation: 1W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SMA
Tolerance: ±10%
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SMA; single diode; 5uA
Semiconductor structure: single diode
Zener voltage: 18V
Leakage current: 5µA
Power dissipation: 1W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SMA
Tolerance: ±10%
Produkt ist nicht verfügbar
SML4746A-E3/61 |
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SMA; single diode; 5uA
Semiconductor structure: single diode
Zener voltage: 18V
Leakage current: 5µA
Power dissipation: 1W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SMA
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SMA; single diode; 5uA
Semiconductor structure: single diode
Zener voltage: 18V
Leakage current: 5µA
Power dissipation: 1W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SMA
Tolerance: ±5%
Produkt ist nicht verfügbar
GSOT12C-E3-08 |
Hersteller: VISHAY
Category: Transil diodes - arrays
Description: Diode: TVS array; 15V; 12A; 337W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Peak pulse power dissipation: 337W
Max. off-state voltage: 12V
Breakdown voltage: 15V
Max. forward impulse current: 12A
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 2
Category: Transil diodes - arrays
Description: Diode: TVS array; 15V; 12A; 337W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Peak pulse power dissipation: 337W
Max. off-state voltage: 12V
Breakdown voltage: 15V
Max. forward impulse current: 12A
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 2
auf Bestellung 1484 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
380+ | 0.19 EUR |
680+ | 0.11 EUR |
770+ | 0.093 EUR |
795+ | 0.09 EUR |
860+ | 0.084 EUR |
IRFI720GPBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.6A; Idm: 10A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.6A; Idm: 10A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFI730GPBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.7A; Idm: 15A; 35W; TO220FP
Mounting: THT
Kind of package: tube
Case: TO220FP
Power dissipation: 35W
Polarisation: unipolar
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 15A
Drain-source voltage: 400V
Drain current: 3.7A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.7A; Idm: 15A; 35W; TO220FP
Mounting: THT
Kind of package: tube
Case: TO220FP
Power dissipation: 35W
Polarisation: unipolar
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 15A
Drain-source voltage: 400V
Drain current: 3.7A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
VO3150A |
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: IGBT driver; Uinsul: 5.3kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5.3kV
Case: DIP8
Conform to the norm: UL
Turn-on time: 0.1µs
Turn-off time: 0.1µs
Max. off-state voltage: 5V
Manufacturer series: VO3150
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: IGBT driver; Uinsul: 5.3kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5.3kV
Case: DIP8
Conform to the norm: UL
Turn-on time: 0.1µs
Turn-off time: 0.1µs
Max. off-state voltage: 5V
Manufacturer series: VO3150
Produkt ist nicht verfügbar
MBB02070C3929FC100 |
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 39.2Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Leads: axial
Mounting: THT
Operating temperature: -55...155°C
Type of resistor: metal film
Power: 0.6W
Resistance: 39.2Ω
Category: THT Resistors
Description: Resistor: metal film; THT; 39.2Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Leads: axial
Mounting: THT
Operating temperature: -55...155°C
Type of resistor: metal film
Power: 0.6W
Resistance: 39.2Ω
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 1.43 EUR |
Si4408DY-T1-E3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 21A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 21A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SI4408DY-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 21A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 21A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SI4420BDY-T1-E3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 13.5A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.5A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 13.5A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.5A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SI4420BDY-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 13.5A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.5A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 13.5A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.5A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SI4421DY-T1-E3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -40A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -40A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SI4421DY-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -40A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -40A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SI4423DY-T1-E3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SI4423DY-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SI4425FDY-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18.3A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18.3A
Pulsed drain current: -70A
Power dissipation: 4.8W
Case: SO8
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18.3A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18.3A
Pulsed drain current: -70A
Power dissipation: 4.8W
Case: SO8
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SI4426DY-T1-E3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 8.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8.5A
Pulsed drain current: 40A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 8.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8.5A
Pulsed drain current: 40A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SI4434ADY-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 4.1A; Idm: 25A; 6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.1A
Pulsed drain current: 25A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 4.1A; Idm: 25A; 6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.1A
Pulsed drain current: 25A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SI4434DY-T1-E3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 3A; Idm: 30A; 3.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3A
Pulsed drain current: 30A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 162mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 3A; Idm: 30A; 3.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3A
Pulsed drain current: 30A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 162mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SI4434DY-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 3A; Idm: 30A; 3.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3A
Pulsed drain current: 30A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 162mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 3A; Idm: 30A; 3.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3A
Pulsed drain current: 30A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 162mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SI4436DY-T1-E3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 25A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 25A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 25A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 25A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SI4436DY-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.8A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.8A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.8A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.8A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
Si4442DY-T1-E3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 22A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 22A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SI4442DY-T1-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 22A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 22A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SI4447ADY-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -7.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.2A
Pulsed drain current: -20A
Power dissipation: 4.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -7.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.2A
Pulsed drain current: -20A
Power dissipation: 4.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
107+ | 0.67 EUR |
129+ | 0.56 EUR |
143+ | 0.5 EUR |
180+ | 0.4 EUR |
190+ | 0.38 EUR |
1000+ | 0.37 EUR |
2500+ | 0.36 EUR |