| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
GSOT12C-E3-08 | VISHAY |
 Category: Transil diodes - arraysDescription: Diode: TVS array; 15V; 12A; 337W; double,common anode; SOT23; Ch: 2 Type of diode: TVS array Peak pulse power dissipation: 337W Max. off-state voltage: 12V Breakdown voltage: 15V Max. forward impulse current: 12A Semiconductor structure: common anode; double Case: SOT23 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 2 |
auf Bestellung 1484 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
| IRFI720GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 2.6A; Idm: 10A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 2.6A Pulsed drain current: 10A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| IRFI730GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 3.7A; Idm: 15A; 35W; TO220FP Mounting: THT Kind of package: tube Case: TO220FP Power dissipation: 35W Polarisation: unipolar Gate charge: 38nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 15A Drain-source voltage: 400V Drain current: 3.7A On-state resistance: 1Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
||||||||||||||||
| VO3150A | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: IGBT driver; Uinsul: 5.3kV; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: IGBT driver Insulation voltage: 5.3kV Case: DIP8 Conform to the norm: UL Turn-on time: 0.1µs Turn-off time: 0.1µs Max. off-state voltage: 5V Manufacturer series: VO3150 |
Produkt ist nicht verfügbar |
||||||||||||||||
 |
MBB02070C3929FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 39.2Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Tolerance: ±1% Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C Max. operating voltage: 350V Leads: axial Mounting: THT Operating temperature: -55...155°C Type of resistor: metal film Power: 0.6W Resistance: 39.2Ω |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
| Si4408DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21A; Idm: 60A; 3.5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 21A Pulsed drain current: 60A Power dissipation: 3.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| SI4408DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21A; Idm: 60A; 3.5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 21A Pulsed drain current: 60A Power dissipation: 3.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| SI4420BDY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 13.5A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 13.5A Pulsed drain current: 50A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| SI4420BDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 13.5A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 13.5A Pulsed drain current: 50A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| SI4421DY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -40A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -14A Pulsed drain current: -40A Power dissipation: 3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 125nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| SI4421DY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -40A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -14A Pulsed drain current: -40A Power dissipation: 3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 125nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| SI4423DY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -14A Pulsed drain current: -50A Power dissipation: 3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 175nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| SI4423DY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -14A Pulsed drain current: -50A Power dissipation: 3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 175nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| SI4425FDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18.3A; Idm: -70A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -18.3A Pulsed drain current: -70A Power dissipation: 4.8W Case: SO8 On-state resistance: 16mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| SI4426DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 8.5A; Idm: 40A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 8.5A Pulsed drain current: 40A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 35mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| SI4434ADY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 4.1A; Idm: 25A; 6W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 4.1A Pulsed drain current: 25A Power dissipation: 6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 16.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| SI4434DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 3A; Idm: 30A; 3.1W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 3A Pulsed drain current: 30A Power dissipation: 3.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 162mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| SI4434DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 3A; Idm: 30A; 3.1W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 3A Pulsed drain current: 30A Power dissipation: 3.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 162mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
 |
SI4436DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 25A; 3.2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Pulsed drain current: 25A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
SI4436DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.8A; 3.2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.8A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||||||
| Si4442DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 22A; Idm: 60A; 3.5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Pulsed drain current: 60A Power dissipation: 3.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| SI4442DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 22A; Idm: 60A; 3.5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Pulsed drain current: 60A Power dissipation: 3.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| SI4447ADY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -7.2A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -7.2A Pulsed drain current: -20A Power dissipation: 4.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 62mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
| SI4447DY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -4.5A; Idm: -30A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -4.5A Pulsed drain current: -30A Power dissipation: 2W Case: SO8 Gate-source voltage: ±16V On-state resistance: 72mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| BFC237086104 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polyester; 100nF; 63VAC; 100VDC; 5mm; ±5%; 2.5x6.5x7.2mm Type of capacitor: polyester Capacitance: 0.1µF Operating voltage: 63V AC; 100V DC Tolerance: ±5% Mounting: THT Terminal pitch: 5mm Operating temperature: -55...85°C Body dimensions: 2.5x6.5x7.2mm Leads dimensions: L 5mm |
Produkt ist nicht verfügbar |
||||||||||||||||
 |
BFC237075104 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polyester; 100nF; 40VAC; 63VDC; 5mm; ±10%; 7.2x2.5x6.5mm Mounting: THT Operating temperature: -55...85°C Terminal pitch: 5mm Tolerance: ±10% Body dimensions: 7.2x2.5x6.5mm Max. operating voltage: 40V AC; 63V DC Type of capacitor: polyester Capacitance: 0.1µF Climate class: 55/100/56 |
auf Bestellung 2880 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
VS-243NQ100PBF | VISHAY |
Category: Diode modules Description: Module: diode; single diode; 100V; If: 240A; D67,HALF-PAK; screw Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 100V Load current: 240A Case: D67; HALF-PAK Max. forward voltage: 0.72V Max. forward impulse current: 3.3kA Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
VJ0805Y223JXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 22nF; 50V; X7R; ±5%; SMD; 0805 Type of capacitor: ceramic Capacitance: 22nF Operating voltage: 50V Dielectric: X7R Tolerance: ±5% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
VJ0805Y223KXAMC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 22nF; 50V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Capacitance: 22nF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
VJ0805Y223KXAPW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 22nF; 50V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Capacitance: 22nF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
VJ0805Y223KXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 22nF; 50V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 22nF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
auf Bestellung 8700 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
VJ1206Y333KXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 33nF; 50V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 33nF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
VJ1210Y333KXATW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 33nF; 50V; X7R; ±10%; SMD; 1210 Type of capacitor: ceramic Capacitance: 33nF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1210 Case - mm: 3225 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
RS1K-E3/61T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 500ns; DO214AC; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 7pF Case: DO214AC Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 5717 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
RS1KHE3_A/H | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 7pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
VOT8121AM-VT | VISHAY |
Category: Optotriacs Description: Optotriac; 3.75kV; without zero voltage crossing driver; SOP4 Case: SOP4 Mounting: SMD Number of channels: 1 Slew rate: 1kV/μs Type of optocoupler: optotriac Kind of output: without zero voltage crossing driver Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
VOT8121AM-T | VISHAY |
Category: Optotriacs Description: Optotriac; 3.75kV; without zero voltage crossing driver,triac Case: SOP4 Mounting: SMD Number of channels: 1 Slew rate: 1kV/μs Type of optocoupler: optotriac Kind of output: triac; without zero voltage crossing driver Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
VOT8121AM-T2 | VISHAY |
Category: Optotriacs Description: Optotriac; 3.75kV; without zero voltage crossing driver,triac Case: SOP4 Mounting: SMD Number of channels: 1 Slew rate: 1kV/μs Type of optocoupler: optotriac Kind of output: triac; without zero voltage crossing driver Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
VOT8121AM-VT2 | VISHAY |
Category: Optotriacs Description: Optotriac; 3.75kV; without zero voltage crossing driver,triac Case: SOP4 Mounting: SMD Number of channels: 1 Conform to the norm: VDE Slew rate: 1kV/μs Type of optocoupler: optotriac Kind of output: triac; without zero voltage crossing driver Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
SUD50P10-43L-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -37.1A; Idm: -40A; 95W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -37.1A Pulsed drain current: -40A Power dissipation: 95W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 160nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
SUD50P10-43L-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -36.4A; Idm: -40A; 72.7W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -36.4A Pulsed drain current: -40A Power dissipation: 72.7W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 160nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
PR02000202009JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 20Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C Mounting: THT Type of resistor: power metal Power: 2W Resistance: 20Ω Tolerance: ±5% Body dimensions: Ø3.9x12mm Temperature coefficient: 250ppm/°C Max. operating voltage: 500V Resistor features: high power and small dimension Leads: axial |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
293D336X96R3A2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 33uF; 6.3VDC; SMD; A; 1206; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 33µF Operating voltage: 6.3V DC Mounting: SMD Case: A Case - inch: 1206 Case - mm: 3216 Tolerance: ±10% Operating temperature: -55...125°C Capacitors series: Tantamount |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
293D336X96R3C2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 33uF; 6.3VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 33µF Operating voltage: 6.3V DC Mounting: SMD Case: C Case - inch: 2312 Case - mm: 6032 Tolerance: ±10% Operating temperature: -55...125°C Capacitors series: Tantamount |
Produkt ist nicht verfügbar |
|||||||||||||||
| SI5419DU-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -40A Kind of package: reel; tape Pulsed drain current: -40A Power dissipation: 31W Gate charge: 45nC Polarisation: unipolar Technology: TrenchFET® Drain current: -12A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
||||||||||||||||
| IRFI9610GPBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -8A; 27W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2A Pulsed drain current: -8A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
| IRFI9620GPBF | VISHAY |
 Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -3A; Idm: -12A; 30W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3A Pulsed drain current: -12A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
 |
IRFIZ48GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 26A; 50W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 26A Power dissipation: 50W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 1179 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
SQD19P06-60L_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 15W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -11A Power dissipation: 15W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Gate charge: 27nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
SQD40031EL_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -94A; 45W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -94A Power dissipation: 45W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 186nC Kind of channel: enhanced |
auf Bestellung 1972 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
SQD45P03-12_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -37A; 23W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -37A Power dissipation: 23W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 55.3nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
IRFR9014PBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; 25W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.2A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of channel: enhanced |
auf Bestellung 1861 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
IRFR9214PBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -1.7A; 50W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -250V Drain current: -1.7A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 14nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
SUD19P06-60-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -8.19A; 2.3W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -8.19A Power dissipation: 2.3W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 26nC Kind of channel: enhanced |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
IRFR9110TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W Mounting: SMD Case: DPAK; TO252 Polarisation: unipolar On-state resistance: 1.2Ω Type of transistor: P-MOSFET Power dissipation: 25W Kind of package: reel; tape Gate charge: 8.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -12A Drain-source voltage: -100V Drain current: -2A |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
IRFU110PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 25W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: THT Gate charge: 8.3nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 1835 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
VJ0402A560FXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 56pF; 50V; C0G (NP0); ±1%; SMD; 0402 Type of capacitor: ceramic Capacitance: 56pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±1% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
VJ0402Q560JXXCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 56pF; 25V; C0G (NP0); ±5%; SMD; 0402 Type of capacitor: ceramic Capacitance: 56pF Operating voltage: 25V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
VJ0603A560GXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 56pF; 50V; C0G (NP0); ±2%; SMD; 0603 Type of capacitor: ceramic Capacitance: 56pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
VJ0603A560JXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 56pF; 100V; C0G (NP0); ±5%; SMD; 0603 Type of capacitor: ceramic Capacitance: 56pF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
| GSOT12C-E3-08 |
|
Hersteller: VISHAY
Category: Transil diodes - arrays
Description: Diode: TVS array; 15V; 12A; 337W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Peak pulse power dissipation: 337W
Max. off-state voltage: 12V
Breakdown voltage: 15V
Max. forward impulse current: 12A
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 2
Category: Transil diodes - arrays
Description: Diode: TVS array; 15V; 12A; 337W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Peak pulse power dissipation: 337W
Max. off-state voltage: 12V
Breakdown voltage: 15V
Max. forward impulse current: 12A
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 2
auf Bestellung 1484 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 380+ | 0.19 EUR |
| 680+ | 0.11 EUR |
| 770+ | 0.093 EUR |
| 795+ | 0.09 EUR |
| 860+ | 0.084 EUR |
| IRFI720GPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.6A; Idm: 10A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.6A; Idm: 10A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFI730GPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.7A; Idm: 15A; 35W; TO220FP
Mounting: THT
Kind of package: tube
Case: TO220FP
Power dissipation: 35W
Polarisation: unipolar
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 15A
Drain-source voltage: 400V
Drain current: 3.7A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.7A; Idm: 15A; 35W; TO220FP
Mounting: THT
Kind of package: tube
Case: TO220FP
Power dissipation: 35W
Polarisation: unipolar
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 15A
Drain-source voltage: 400V
Drain current: 3.7A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| VO3150A |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: IGBT driver; Uinsul: 5.3kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5.3kV
Case: DIP8
Conform to the norm: UL
Turn-on time: 0.1µs
Turn-off time: 0.1µs
Max. off-state voltage: 5V
Manufacturer series: VO3150
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: IGBT driver; Uinsul: 5.3kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5.3kV
Case: DIP8
Conform to the norm: UL
Turn-on time: 0.1µs
Turn-off time: 0.1µs
Max. off-state voltage: 5V
Manufacturer series: VO3150
Produkt ist nicht verfügbar
| MBB02070C3929FC100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 39.2Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Leads: axial
Mounting: THT
Operating temperature: -55...155°C
Type of resistor: metal film
Power: 0.6W
Resistance: 39.2Ω
Category: THT Resistors
Description: Resistor: metal film; THT; 39.2Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Leads: axial
Mounting: THT
Operating temperature: -55...155°C
Type of resistor: metal film
Power: 0.6W
Resistance: 39.2Ω
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 50+ | 1.43 EUR |
| Si4408DY-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 21A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 21A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4408DY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 21A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 21A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4420BDY-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 13.5A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.5A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 13.5A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.5A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4420BDY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 13.5A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.5A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 13.5A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.5A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4421DY-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -40A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -40A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4421DY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -40A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -40A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4423DY-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4423DY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4425FDY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18.3A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18.3A
Pulsed drain current: -70A
Power dissipation: 4.8W
Case: SO8
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18.3A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18.3A
Pulsed drain current: -70A
Power dissipation: 4.8W
Case: SO8
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4426DY-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 8.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8.5A
Pulsed drain current: 40A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 8.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8.5A
Pulsed drain current: 40A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4434ADY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 4.1A; Idm: 25A; 6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.1A
Pulsed drain current: 25A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 4.1A; Idm: 25A; 6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.1A
Pulsed drain current: 25A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4434DY-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 3A; Idm: 30A; 3.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3A
Pulsed drain current: 30A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 162mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 3A; Idm: 30A; 3.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3A
Pulsed drain current: 30A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 162mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4434DY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 3A; Idm: 30A; 3.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3A
Pulsed drain current: 30A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 162mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 3A; Idm: 30A; 3.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3A
Pulsed drain current: 30A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 162mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4436DY-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 25A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 25A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 25A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 25A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4436DY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.8A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.8A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.8A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.8A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| Si4442DY-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 22A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 22A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4442DY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 22A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 22A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI4447ADY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -7.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.2A
Pulsed drain current: -20A
Power dissipation: 4.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -7.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.2A
Pulsed drain current: -20A
Power dissipation: 4.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 107+ | 0.67 EUR |
| 129+ | 0.56 EUR |
| 143+ | 0.5 EUR |
| 180+ | 0.4 EUR |
| 190+ | 0.38 EUR |
| 1000+ | 0.37 EUR |
| 2500+ | 0.36 EUR |
| SI4447DY-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -4.5A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.5A
Pulsed drain current: -30A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±16V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -4.5A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.5A
Pulsed drain current: -30A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±16V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BFC237086104 |
|
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polyester; 100nF; 63VAC; 100VDC; 5mm; ±5%; 2.5x6.5x7.2mm
Type of capacitor: polyester
Capacitance: 0.1µF
Operating voltage: 63V AC; 100V DC
Tolerance: ±5%
Mounting: THT
Terminal pitch: 5mm
Operating temperature: -55...85°C
Body dimensions: 2.5x6.5x7.2mm
Leads dimensions: L 5mm
Category: THT Film Capacitors
Description: Capacitor: polyester; 100nF; 63VAC; 100VDC; 5mm; ±5%; 2.5x6.5x7.2mm
Type of capacitor: polyester
Capacitance: 0.1µF
Operating voltage: 63V AC; 100V DC
Tolerance: ±5%
Mounting: THT
Terminal pitch: 5mm
Operating temperature: -55...85°C
Body dimensions: 2.5x6.5x7.2mm
Leads dimensions: L 5mm
Produkt ist nicht verfügbar
| BFC237075104 |
|
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polyester; 100nF; 40VAC; 63VDC; 5mm; ±10%; 7.2x2.5x6.5mm
Mounting: THT
Operating temperature: -55...85°C
Terminal pitch: 5mm
Tolerance: ±10%
Body dimensions: 7.2x2.5x6.5mm
Max. operating voltage: 40V AC; 63V DC
Type of capacitor: polyester
Capacitance: 0.1µF
Climate class: 55/100/56
Category: THT Film Capacitors
Description: Capacitor: polyester; 100nF; 40VAC; 63VDC; 5mm; ±10%; 7.2x2.5x6.5mm
Mounting: THT
Operating temperature: -55...85°C
Terminal pitch: 5mm
Tolerance: ±10%
Body dimensions: 7.2x2.5x6.5mm
Max. operating voltage: 40V AC; 63V DC
Type of capacitor: polyester
Capacitance: 0.1µF
Climate class: 55/100/56
auf Bestellung 2880 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 230+ | 0.32 EUR |
| 430+ | 0.17 EUR |
| 650+ | 0.11 EUR |
| 690+ | 0.1 EUR |
| VS-243NQ100PBF |
|
Hersteller: VISHAY
Category: Diode modules
Description: Module: diode; single diode; 100V; If: 240A; D67,HALF-PAK; screw
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 100V
Load current: 240A
Case: D67; HALF-PAK
Max. forward voltage: 0.72V
Max. forward impulse current: 3.3kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Category: Diode modules
Description: Module: diode; single diode; 100V; If: 240A; D67,HALF-PAK; screw
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 100V
Load current: 240A
Case: D67; HALF-PAK
Max. forward voltage: 0.72V
Max. forward impulse current: 3.3kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 53.97 EUR |
| VJ0805Y223JXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 22nF; 50V; X7R; ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 22nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 22nF; 50V; X7R; ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 22nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VJ0805Y223KXAMC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 22nF; 50V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 22nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 22nF; 50V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 22nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VJ0805Y223KXAPW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 22nF; 50V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 22nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 22nF; 50V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 22nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VJ0805Y223KXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 22nF; 50V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 22nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 22nF; 50V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 22nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
auf Bestellung 8700 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3600+ | 0.02 EUR |
| 4000+ | 0.018 EUR |
| 6100+ | 0.012 EUR |
| 6500+ | 0.011 EUR |
| 6900+ | 0.01 EUR |
| VJ1206Y333KXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 33nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 33nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 33nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 33nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VJ1210Y333KXATW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 33nF; 50V; X7R; ±10%; SMD; 1210
Type of capacitor: ceramic
Capacitance: 33nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1210
Case - mm: 3225
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 33nF; 50V; X7R; ±10%; SMD; 1210
Type of capacitor: ceramic
Capacitance: 33nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1210
Case - mm: 3225
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| RS1K-E3/61T |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; DO214AC; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 7pF
Case: DO214AC
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; DO214AC; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 7pF
Case: DO214AC
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 5717 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 491+ | 0.15 EUR |
| 662+ | 0.11 EUR |
| 905+ | 0.079 EUR |
| 957+ | 0.075 EUR |
| RS1KHE3_A/H |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 7pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 7pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| VOT8121AM-VT |
|
Hersteller: VISHAY
Category: Optotriacs
Description: Optotriac; 3.75kV; without zero voltage crossing driver; SOP4
Case: SOP4
Mounting: SMD
Number of channels: 1
Slew rate: 1kV/μs
Type of optocoupler: optotriac
Kind of output: without zero voltage crossing driver
Insulation voltage: 3.75kV
Category: Optotriacs
Description: Optotriac; 3.75kV; without zero voltage crossing driver; SOP4
Case: SOP4
Mounting: SMD
Number of channels: 1
Slew rate: 1kV/μs
Type of optocoupler: optotriac
Kind of output: without zero voltage crossing driver
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
| VOT8121AM-T |
|
Hersteller: VISHAY
Category: Optotriacs
Description: Optotriac; 3.75kV; without zero voltage crossing driver,triac
Case: SOP4
Mounting: SMD
Number of channels: 1
Slew rate: 1kV/μs
Type of optocoupler: optotriac
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 3.75kV
Category: Optotriacs
Description: Optotriac; 3.75kV; without zero voltage crossing driver,triac
Case: SOP4
Mounting: SMD
Number of channels: 1
Slew rate: 1kV/μs
Type of optocoupler: optotriac
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
| VOT8121AM-T2 |
|
Hersteller: VISHAY
Category: Optotriacs
Description: Optotriac; 3.75kV; without zero voltage crossing driver,triac
Case: SOP4
Mounting: SMD
Number of channels: 1
Slew rate: 1kV/μs
Type of optocoupler: optotriac
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 3.75kV
Category: Optotriacs
Description: Optotriac; 3.75kV; without zero voltage crossing driver,triac
Case: SOP4
Mounting: SMD
Number of channels: 1
Slew rate: 1kV/μs
Type of optocoupler: optotriac
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
| VOT8121AM-VT2 |
|
Hersteller: VISHAY
Category: Optotriacs
Description: Optotriac; 3.75kV; without zero voltage crossing driver,triac
Case: SOP4
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Slew rate: 1kV/μs
Type of optocoupler: optotriac
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 3.75kV
Category: Optotriacs
Description: Optotriac; 3.75kV; without zero voltage crossing driver,triac
Case: SOP4
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Slew rate: 1kV/μs
Type of optocoupler: optotriac
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
| SUD50P10-43L-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -37.1A; Idm: -40A; 95W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -37.1A
Pulsed drain current: -40A
Power dissipation: 95W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -37.1A; Idm: -40A; 95W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -37.1A
Pulsed drain current: -40A
Power dissipation: 95W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SUD50P10-43L-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -36.4A; Idm: -40A; 72.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -36.4A
Pulsed drain current: -40A
Power dissipation: 72.7W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -36.4A; Idm: -40A; 72.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -36.4A
Pulsed drain current: -40A
Power dissipation: 72.7W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PR02000202009JA100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 20Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Mounting: THT
Type of resistor: power metal
Power: 2W
Resistance: 20Ω
Tolerance: ±5%
Body dimensions: Ø3.9x12mm
Temperature coefficient: 250ppm/°C
Max. operating voltage: 500V
Resistor features: high power and small dimension
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 20Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Mounting: THT
Type of resistor: power metal
Power: 2W
Resistance: 20Ω
Tolerance: ±5%
Body dimensions: Ø3.9x12mm
Temperature coefficient: 250ppm/°C
Max. operating voltage: 500V
Resistor features: high power and small dimension
Leads: axial
Produkt ist nicht verfügbar
| 293D336X96R3A2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 6.3VDC; SMD; A; 1206; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 6.3V DC
Mounting: SMD
Case: A
Case - inch: 1206
Case - mm: 3216
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 6.3VDC; SMD; A; 1206; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 6.3V DC
Mounting: SMD
Case: A
Case - inch: 1206
Case - mm: 3216
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Produkt ist nicht verfügbar
| 293D336X96R3C2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 6.3VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 6.3V DC
Mounting: SMD
Case: C
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 6.3VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 6.3V DC
Mounting: SMD
Case: C
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Produkt ist nicht verfügbar
| SI5419DU-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -40A
Kind of package: reel; tape
Pulsed drain current: -40A
Power dissipation: 31W
Gate charge: 45nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -12A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -40A
Kind of package: reel; tape
Pulsed drain current: -40A
Power dissipation: 31W
Gate charge: 45nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -12A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Produkt ist nicht verfügbar
| IRFI9610GPBF |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -8A; 27W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -8A; 27W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFI9620GPBF |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3A; Idm: -12A; 30W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3A; Idm: -12A; 30W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFIZ48GPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 1179 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 38+ | 1.93 EUR |
| 42+ | 1.73 EUR |
| 47+ | 1.54 EUR |
| 57+ | 1.26 EUR |
| 61+ | 1.19 EUR |
| SQD19P06-60L_GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 15W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Power dissipation: 15W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 15W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Power dissipation: 15W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SQD40031EL_GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -94A; 45W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -94A
Power dissipation: 45W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 186nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -94A; 45W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -94A
Power dissipation: 45W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 186nC
Kind of channel: enhanced
auf Bestellung 1972 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 33+ | 2.2 EUR |
| 37+ | 1.97 EUR |
| 50+ | 1.43 EUR |
| 53+ | 1.36 EUR |
| SQD45P03-12_GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -37A; 23W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -37A
Power dissipation: 23W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 55.3nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -37A; 23W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -37A
Power dissipation: 23W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 55.3nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9014PBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; 25W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; 25W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of channel: enhanced
auf Bestellung 1861 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 68+ | 1.06 EUR |
| 113+ | 0.63 EUR |
| 125+ | 0.57 EUR |
| 155+ | 0.46 EUR |
| 163+ | 0.44 EUR |
| 1500+ | 0.42 EUR |
| IRFR9214PBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -1.7A; 50W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -1.7A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -1.7A; 50W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -1.7A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SUD19P06-60-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.19A; 2.3W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.19A
Power dissipation: 2.3W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.19A; 2.3W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.19A
Power dissipation: 2.3W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhanced
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 7.95 EUR |
| IRFR9110TRPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W
Mounting: SMD
Case: DPAK; TO252
Polarisation: unipolar
On-state resistance: 1.2Ω
Type of transistor: P-MOSFET
Power dissipation: 25W
Kind of package: reel; tape
Gate charge: 8.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Drain-source voltage: -100V
Drain current: -2A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W
Mounting: SMD
Case: DPAK; TO252
Polarisation: unipolar
On-state resistance: 1.2Ω
Type of transistor: P-MOSFET
Power dissipation: 25W
Kind of package: reel; tape
Gate charge: 8.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Drain-source voltage: -100V
Drain current: -2A
Produkt ist nicht verfügbar
| IRFU110PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 1835 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 65+ | 1.1 EUR |
| 143+ | 0.5 EUR |
| 166+ | 0.43 EUR |
| 181+ | 0.4 EUR |
| 300+ | 0.39 EUR |
| VJ0402A560FXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 56pF; 50V; C0G (NP0); ±1%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 56pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 56pF; 50V; C0G (NP0); ±1%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 56pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VJ0402Q560JXXCW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 56pF; 25V; C0G (NP0); ±5%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 56pF
Operating voltage: 25V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 56pF; 25V; C0G (NP0); ±5%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 56pF
Operating voltage: 25V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VJ0603A560GXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 56pF; 50V; C0G (NP0); ±2%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 56pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 56pF; 50V; C0G (NP0); ±2%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 56pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VJ0603A560JXBCW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 56pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 56pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 56pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 56pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Produkt ist nicht verfügbar