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ILQ30 VISHAY ild55.pdf ILQ30 Optocouplers - analog output
auf Bestellung 99 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.79 EUR
40+ 1.79 EUR
43+ 1.69 EUR
500+ 1.67 EUR
Mindestbestellmenge: 19
ILQ55 VISHAY ild55.pdf ILQ55 Optocouplers - analog output
auf Bestellung 451 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.35 EUR
43+ 1.69 EUR
46+ 1.59 EUR
Mindestbestellmenge: 22
ILQ615-1 ILQ615-1 VISHAY ILQ615-1.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 4; OUT: transistor; 5.3kV; CTR@If: 30%@1mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 4
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 30%@1mA
Case: DIP16
Turn-on time: 1.6µs
Turn-off time: 8.6µs
Slew rate: 5.3kV/μs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
ILQ615-1X009 VISHAY ild615.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 4
Kind of output: transistor
Insulation voltage: 4.42kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: SMD16
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 18µs
Max. off-state voltage: 6V
Manufacturer series: ILQ615
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
ILQ615-2 VISHAY ild615.pdf ILQ615-2 Optocouplers - analog output
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)
49+1.47 EUR
73+ 0.98 EUR
78+ 0.93 EUR
Mindestbestellmenge: 49
ILQ615-2X007 VISHAY ild615.pdf ILQ615-2X007 Optocouplers - analog output
Produkt ist nicht verfügbar
ILQ615-3 VISHAY ild615.pdf ILQ615-3 Optocouplers - analog output
Produkt ist nicht verfügbar
ILQ615-3X009 VISHAY ild615.pdf ILQ615-3X009 Optocouplers - analog output
Produkt ist nicht verfügbar
ILQ615-4 ILQ615-4 VISHAY ILx615-DTE.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 4; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP16
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 4
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP16
Turn-on time: 3µs
Turn-off time: 2.3µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1109 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.86 EUR
28+ 2.57 EUR
64+ 1.12 EUR
68+ 1.06 EUR
Mindestbestellmenge: 25
ILQ615-4X009 VISHAY ild615.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 4
Kind of output: transistor
Insulation voltage: 4.42kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: SMD16
Conform to the norm: UL
Turn-on time: 6µs
Turn-off time: 25µs
Max. off-state voltage: 6V
Manufacturer series: ILQ615
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
ILQ615-4X009T VISHAY ild615.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 4
Kind of output: transistor
Insulation voltage: 4.42kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: SMD16
Conform to the norm: UL
Turn-on time: 3s
Turn-off time: 2.3µs
Max. off-state voltage: 6V
Manufacturer series: ILQ615
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
ILQ620-X009T VISHAY ild620.pdf ILQ620-X009T Optocouplers - analog output
Produkt ist nicht verfügbar
ILQ620GB-X009 VISHAY ild620.pdf ILQ620GB-X009 Optocouplers - analog output
Produkt ist nicht verfügbar
ILQ620GB-X009T VISHAY ild620.pdf ILQ620GB-X009T Optocouplers - analog output
Produkt ist nicht verfügbar
ILQ621 VISHAY ild621.pdf ILQ621 Optocouplers - analog output
auf Bestellung 562 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.43 EUR
71+ 1.02 EUR
75+ 0.96 EUR
Mindestbestellmenge: 50
ILQ621GB VISHAY ild621.pdf ILQ621GB Optocouplers - analog output
auf Bestellung 751 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.86 EUR
65+ 1.1 EUR
69+ 1.04 EUR
Mindestbestellmenge: 25
ILQ621GB-X009 VISHAY ild621.pdf ILQ621GB-X009 Optocouplers - analog output
Produkt ist nicht verfügbar
ILQ74 VISHAY ild74.pdf ILQ74 Optocouplers - analog output
auf Bestellung 620 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.29 EUR
64+ 1.13 EUR
67+ 1.07 EUR
Mindestbestellmenge: 17
IMBD4148-E3-08 IMBD4148-E3-08 VISHAY Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1V; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2080 Stücke:
Lieferzeit 7-14 Tag (e)
1280+0.056 EUR
1890+ 0.038 EUR
2080+ 0.034 EUR
Mindestbestellmenge: 1280
IMBD4148-HE3-08 IMBD4148-HE3-08 VISHAY Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1V; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 8520 Stücke:
Lieferzeit 7-14 Tag (e)
975+0.074 EUR
1080+ 0.066 EUR
1445+ 0.05 EUR
1525+ 0.047 EUR
Mindestbestellmenge: 975
IRF510PBF IRF510PBF VISHAY IRF510PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1568 Stücke:
Lieferzeit 7-14 Tag (e)
106+0.68 EUR
110+ 0.65 EUR
135+ 0.53 EUR
143+ 0.5 EUR
250+ 0.49 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 106
IRF510SPBF IRF510SPBF VISHAY IRF510SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 491 Stücke:
Lieferzeit 7-14 Tag (e)
65+1.1 EUR
100+ 0.72 EUR
115+ 0.62 EUR
130+ 0.55 EUR
138+ 0.52 EUR
1000+ 0.51 EUR
Mindestbestellmenge: 65
IRF510STRLPBF IRF510STRLPBF VISHAY IRF510SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF510STRRPBF VISHAY sihf510s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 20A; 43W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.6A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF520PBF IRF520PBF VISHAY IRF520PBF.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.5A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.5A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 335 Stücke:
Lieferzeit 7-14 Tag (e)
59+1.23 EUR
107+ 0.67 EUR
120+ 0.6 EUR
135+ 0.53 EUR
142+ 0.5 EUR
Mindestbestellmenge: 59
IRF530PBF IRF530PBF VISHAY IRF530PBF.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3410 Stücke:
Lieferzeit 7-14 Tag (e)
68+1.06 EUR
109+ 0.66 EUR
122+ 0.59 EUR
159+ 0.45 EUR
168+ 0.43 EUR
Mindestbestellmenge: 68
IRF530SPBF IRF530SPBF VISHAY irf530s.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1664 Stücke:
Lieferzeit 7-14 Tag (e)
65+1.1 EUR
96+ 0.75 EUR
110+ 0.65 EUR
125+ 0.57 EUR
132+ 0.54 EUR
Mindestbestellmenge: 65
IRF530STRLPBF VISHAY sihf530s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF540PBF IRF540PBF VISHAY IRF540PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2427 Stücke:
Lieferzeit 7-14 Tag (e)
67+1.07 EUR
73+ 0.99 EUR
78+ 0.92 EUR
88+ 0.82 EUR
93+ 0.77 EUR
250+ 0.74 EUR
Mindestbestellmenge: 67
IRF540SPBF IRF540SPBF VISHAY irf540s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)
56+1.27 EUR
57+ 1.26 EUR
Mindestbestellmenge: 56
IRF540STRLPBF VISHAY sihf540s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF540STRRPBF VISHAY sihf540s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF610PBF IRF610PBF VISHAY IRF610PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.1A; 36W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.1A
Power dissipation: 36W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1174 Stücke:
Lieferzeit 7-14 Tag (e)
72+1 EUR
172+ 0.42 EUR
212+ 0.34 EUR
225+ 0.32 EUR
250+ 0.31 EUR
Mindestbestellmenge: 72
IRF610SPBF VISHAY sih610s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.3A
Pulsed drain current: 10A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF610STRLPBF VISHAY sih610s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.3A
Pulsed drain current: 10A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF610STRRPBF VISHAY sih610s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.3A
Pulsed drain current: 10A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF614PBF VISHAY irf614.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 2.7A; Idm: 8A; 36W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 2.7A
Pulsed drain current: 8A
Power dissipation: 36W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF614SPBF VISHAY sihf614s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 2.7A; Idm: 8A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 2.7A
Pulsed drain current: 8A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF620PBF IRF620PBF VISHAY IRF620PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; 50W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.3A
Power dissipation: 50W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1580 Stücke:
Lieferzeit 7-14 Tag (e)
66+1.09 EUR
104+ 0.69 EUR
131+ 0.55 EUR
139+ 0.52 EUR
1000+ 0.5 EUR
Mindestbestellmenge: 66
IRF620SPBF VISHAY sihf620s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.2A
Pulsed drain current: 18A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF620STRLPBF VISHAY sihf620s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.2A
Pulsed drain current: 18A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF620STRRPBF VISHAY sihf620s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.2A
Pulsed drain current: 18A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF624PBF VISHAY irf624.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.4A; Idm: 14A; 50W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.4A
Pulsed drain current: 14A
Power dissipation: 50W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF624SPBF VISHAY sihf624s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.4A; Idm: 14A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.4A
Pulsed drain current: 14A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF630PBF IRF630PBF VISHAY IRF630PBF.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 9.4nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 638 Stücke:
Lieferzeit 7-14 Tag (e)
55+1.3 EUR
87+ 0.82 EUR
110+ 0.65 EUR
116+ 0.62 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 55
IRF630SPBF IRF630SPBF VISHAY IRF630S.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 267 Stücke:
Lieferzeit 7-14 Tag (e)
70+1.03 EUR
78+ 0.92 EUR
95+ 0.76 EUR
100+ 0.72 EUR
1000+ 0.68 EUR
Mindestbestellmenge: 70
IRF630STRLPBF VISHAY sih630s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF630STRRPBF VISHAY sih630s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF634PBF IRF634PBF VISHAY IRF634PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5.1A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5.1A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 276 Stücke:
Lieferzeit 7-14 Tag (e)
71+1.02 EUR
96+ 0.75 EUR
117+ 0.61 EUR
122+ 0.59 EUR
1000+ 0.57 EUR
Mindestbestellmenge: 71
IRF634STRRPBF VISHAY sihf634s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.1A; Idm: 32A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.1A
Pulsed drain current: 32A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF640PBF IRF640PBF VISHAY IRF640PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF640PBF-BE3 VISHAY sihf640.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF640SPBF IRF640SPBF VISHAY IRF640S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 130W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1050 Stücke:
Lieferzeit 7-14 Tag (e)
49+1.49 EUR
53+ 1.36 EUR
70+ 1.03 EUR
74+ 0.97 EUR
Mindestbestellmenge: 49
IRF640STRLPBF IRF640STRLPBF VISHAY IRF640S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF640STRRPBF VISHAY sihf640s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF644PBF IRF644PBF VISHAY IRF644PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1518 Stücke:
Lieferzeit 7-14 Tag (e)
72+1 EUR
80+ 0.9 EUR
99+ 0.73 EUR
105+ 0.69 EUR
1000+ 0.67 EUR
Mindestbestellmenge: 72
IRF644SPBF IRF644SPBF VISHAY IRF644S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 630 Stücke:
Lieferzeit 7-14 Tag (e)
47+1.54 EUR
52+ 1.4 EUR
64+ 1.13 EUR
68+ 1.06 EUR
1000+ 1.03 EUR
Mindestbestellmenge: 47
IRF644STRLPBF VISHAY sihf644s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 14A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF644STRRPBF VISHAY sihf644s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 14A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF710PBF IRF710PBF VISHAY IRF710PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; 36W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Power dissipation: 36W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1561 Stücke:
Lieferzeit 7-14 Tag (e)
55+1.3 EUR
113+ 0.64 EUR
142+ 0.51 EUR
150+ 0.48 EUR
1000+ 0.47 EUR
Mindestbestellmenge: 55
ILQ30 ild55.pdf
Hersteller: VISHAY
ILQ30 Optocouplers - analog output
auf Bestellung 99 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
19+3.79 EUR
40+ 1.79 EUR
43+ 1.69 EUR
500+ 1.67 EUR
Mindestbestellmenge: 19
ILQ55 ild55.pdf
Hersteller: VISHAY
ILQ55 Optocouplers - analog output
auf Bestellung 451 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
22+3.35 EUR
43+ 1.69 EUR
46+ 1.59 EUR
Mindestbestellmenge: 22
ILQ615-1 ILQ615-1.pdf
ILQ615-1
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 4; OUT: transistor; 5.3kV; CTR@If: 30%@1mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 4
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 30%@1mA
Case: DIP16
Turn-on time: 1.6µs
Turn-off time: 8.6µs
Slew rate: 5.3kV/μs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
ILQ615-1X009 ild615.pdf
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 4
Kind of output: transistor
Insulation voltage: 4.42kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: SMD16
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 18µs
Max. off-state voltage: 6V
Manufacturer series: ILQ615
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
ILQ615-2 ild615.pdf
Hersteller: VISHAY
ILQ615-2 Optocouplers - analog output
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
49+1.47 EUR
73+ 0.98 EUR
78+ 0.93 EUR
Mindestbestellmenge: 49
ILQ615-2X007 ild615.pdf
Hersteller: VISHAY
ILQ615-2X007 Optocouplers - analog output
Produkt ist nicht verfügbar
ILQ615-3 ild615.pdf
Hersteller: VISHAY
ILQ615-3 Optocouplers - analog output
Produkt ist nicht verfügbar
ILQ615-3X009 ild615.pdf
Hersteller: VISHAY
ILQ615-3X009 Optocouplers - analog output
Produkt ist nicht verfügbar
ILQ615-4 ILx615-DTE.pdf
ILQ615-4
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 4; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP16
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 4
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP16
Turn-on time: 3µs
Turn-off time: 2.3µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1109 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
25+2.86 EUR
28+ 2.57 EUR
64+ 1.12 EUR
68+ 1.06 EUR
Mindestbestellmenge: 25
ILQ615-4X009 ild615.pdf
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 4
Kind of output: transistor
Insulation voltage: 4.42kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: SMD16
Conform to the norm: UL
Turn-on time: 6µs
Turn-off time: 25µs
Max. off-state voltage: 6V
Manufacturer series: ILQ615
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
ILQ615-4X009T ild615.pdf
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 4
Kind of output: transistor
Insulation voltage: 4.42kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: SMD16
Conform to the norm: UL
Turn-on time: 3s
Turn-off time: 2.3µs
Max. off-state voltage: 6V
Manufacturer series: ILQ615
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
ILQ620-X009T ild620.pdf
Hersteller: VISHAY
ILQ620-X009T Optocouplers - analog output
Produkt ist nicht verfügbar
ILQ620GB-X009 ild620.pdf
Hersteller: VISHAY
ILQ620GB-X009 Optocouplers - analog output
Produkt ist nicht verfügbar
ILQ620GB-X009T ild620.pdf
Hersteller: VISHAY
ILQ620GB-X009T Optocouplers - analog output
Produkt ist nicht verfügbar
ILQ621 ild621.pdf
Hersteller: VISHAY
ILQ621 Optocouplers - analog output
auf Bestellung 562 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
50+1.43 EUR
71+ 1.02 EUR
75+ 0.96 EUR
Mindestbestellmenge: 50
ILQ621GB ild621.pdf
Hersteller: VISHAY
ILQ621GB Optocouplers - analog output
auf Bestellung 751 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
25+2.86 EUR
65+ 1.1 EUR
69+ 1.04 EUR
Mindestbestellmenge: 25
ILQ621GB-X009 ild621.pdf
Hersteller: VISHAY
ILQ621GB-X009 Optocouplers - analog output
Produkt ist nicht verfügbar
ILQ74 ild74.pdf
Hersteller: VISHAY
ILQ74 Optocouplers - analog output
auf Bestellung 620 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
17+4.29 EUR
64+ 1.13 EUR
67+ 1.07 EUR
Mindestbestellmenge: 17
IMBD4148-E3-08
IMBD4148-E3-08
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1V; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2080 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1280+0.056 EUR
1890+ 0.038 EUR
2080+ 0.034 EUR
Mindestbestellmenge: 1280
IMBD4148-HE3-08
IMBD4148-HE3-08
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1V; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 8520 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
975+0.074 EUR
1080+ 0.066 EUR
1445+ 0.05 EUR
1525+ 0.047 EUR
Mindestbestellmenge: 975
IRF510PBF IRF510PBF.pdf
IRF510PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1568 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
106+0.68 EUR
110+ 0.65 EUR
135+ 0.53 EUR
143+ 0.5 EUR
250+ 0.49 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 106
IRF510SPBF IRF510SPBF.pdf
IRF510SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 491 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
65+1.1 EUR
100+ 0.72 EUR
115+ 0.62 EUR
130+ 0.55 EUR
138+ 0.52 EUR
1000+ 0.51 EUR
Mindestbestellmenge: 65
IRF510STRLPBF IRF510SPBF.pdf
IRF510STRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF510STRRPBF sihf510s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 20A; 43W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.6A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF520PBF description IRF520PBF.pdf
IRF520PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.5A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.5A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 335 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
59+1.23 EUR
107+ 0.67 EUR
120+ 0.6 EUR
135+ 0.53 EUR
142+ 0.5 EUR
Mindestbestellmenge: 59
IRF530PBF description IRF530PBF.pdf
IRF530PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3410 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
68+1.06 EUR
109+ 0.66 EUR
122+ 0.59 EUR
159+ 0.45 EUR
168+ 0.43 EUR
Mindestbestellmenge: 68
IRF530SPBF description irf530s.pdf
IRF530SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1664 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
65+1.1 EUR
96+ 0.75 EUR
110+ 0.65 EUR
125+ 0.57 EUR
132+ 0.54 EUR
Mindestbestellmenge: 65
IRF530STRLPBF sihf530s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF540PBF IRF540PBF.pdf
IRF540PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2427 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
67+1.07 EUR
73+ 0.99 EUR
78+ 0.92 EUR
88+ 0.82 EUR
93+ 0.77 EUR
250+ 0.74 EUR
Mindestbestellmenge: 67
IRF540SPBF irf540s.pdf
IRF540SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
56+1.27 EUR
57+ 1.26 EUR
Mindestbestellmenge: 56
IRF540STRLPBF sihf540s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF540STRRPBF sihf540s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF610PBF IRF610PBF.pdf
IRF610PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.1A; 36W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.1A
Power dissipation: 36W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1174 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
72+1 EUR
172+ 0.42 EUR
212+ 0.34 EUR
225+ 0.32 EUR
250+ 0.31 EUR
Mindestbestellmenge: 72
IRF610SPBF sih610s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.3A
Pulsed drain current: 10A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF610STRLPBF sih610s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.3A
Pulsed drain current: 10A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF610STRRPBF sih610s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.3A
Pulsed drain current: 10A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF614PBF irf614.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 2.7A; Idm: 8A; 36W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 2.7A
Pulsed drain current: 8A
Power dissipation: 36W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF614SPBF sihf614s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 2.7A; Idm: 8A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 2.7A
Pulsed drain current: 8A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF620PBF IRF620PBF.pdf
IRF620PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; 50W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.3A
Power dissipation: 50W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1580 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
66+1.09 EUR
104+ 0.69 EUR
131+ 0.55 EUR
139+ 0.52 EUR
1000+ 0.5 EUR
Mindestbestellmenge: 66
IRF620SPBF sihf620s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.2A
Pulsed drain current: 18A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF620STRLPBF sihf620s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.2A
Pulsed drain current: 18A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF620STRRPBF sihf620s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.2A
Pulsed drain current: 18A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF624PBF description irf624.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.4A; Idm: 14A; 50W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.4A
Pulsed drain current: 14A
Power dissipation: 50W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF624SPBF sihf624s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.4A; Idm: 14A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.4A
Pulsed drain current: 14A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF630PBF description IRF630PBF.pdf
IRF630PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 9.4nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 638 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
55+1.3 EUR
87+ 0.82 EUR
110+ 0.65 EUR
116+ 0.62 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 55
IRF630SPBF description IRF630S.pdf
IRF630SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 267 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
70+1.03 EUR
78+ 0.92 EUR
95+ 0.76 EUR
100+ 0.72 EUR
1000+ 0.68 EUR
Mindestbestellmenge: 70
IRF630STRLPBF sih630s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF630STRRPBF sih630s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF634PBF IRF634PBF.pdf
IRF634PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5.1A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5.1A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 276 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
71+1.02 EUR
96+ 0.75 EUR
117+ 0.61 EUR
122+ 0.59 EUR
1000+ 0.57 EUR
Mindestbestellmenge: 71
IRF634STRRPBF sihf634s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.1A; Idm: 32A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.1A
Pulsed drain current: 32A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF640PBF IRF640PBF.pdf
IRF640PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF640PBF-BE3 sihf640.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF640SPBF IRF640S.pdf
IRF640SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 130W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1050 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
49+1.49 EUR
53+ 1.36 EUR
70+ 1.03 EUR
74+ 0.97 EUR
Mindestbestellmenge: 49
IRF640STRLPBF IRF640S.pdf
IRF640STRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF640STRRPBF sihf640s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF644PBF IRF644PBF.pdf
IRF644PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1518 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
72+1 EUR
80+ 0.9 EUR
99+ 0.73 EUR
105+ 0.69 EUR
1000+ 0.67 EUR
Mindestbestellmenge: 72
IRF644SPBF IRF644S.pdf
IRF644SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 630 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
47+1.54 EUR
52+ 1.4 EUR
64+ 1.13 EUR
68+ 1.06 EUR
1000+ 1.03 EUR
Mindestbestellmenge: 47
IRF644STRLPBF sihf644s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 14A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF644STRRPBF sihf644s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 14A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF710PBF IRF710PBF.pdf
IRF710PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; 36W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Power dissipation: 36W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1561 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
55+1.3 EUR
113+ 0.64 EUR
142+ 0.51 EUR
150+ 0.48 EUR
1000+ 0.47 EUR
Mindestbestellmenge: 55
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