Produkte > VISHAY > Alle Produkte des Herstellers VISHAY (291755) > Seite 662 nach 4863

Wählen Sie Seite:   [  << Vorherige Seite ]  1 486 657 658 659 660 661 662 663 664 665 666 667 972 1458 1944 2430 2916 3402 3888 4374 4860 4863  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
IRFBG20PBF IRFBG20PBF VISHAY IRFBG20PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.86A; 54W; TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 1kV
Drain current: 0.86A
On-state resistance: 11Ω
Type of transistor: N-MOSFET
Case: TO220AB
Power dissipation: 54W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 940 Stücke:
Lieferzeit 7-14 Tag (e)
63+1.14 EUR
67+ 1.07 EUR
73+ 0.98 EUR
82+ 0.88 EUR
87+ 0.83 EUR
250+ 0.8 EUR
Mindestbestellmenge: 63
IRFBG20PBF-BE3 VISHAY sihbg20.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.4A; Idm: 5.6A; 54W; TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 5.6A
Drain-source voltage: 1kV
Drain current: 1.4A
On-state resistance: 11Ω
Type of transistor: N-MOSFET
Case: TO220AB
Power dissipation: 54W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFBG30PBF IRFBG30PBF VISHAY IRFBG30PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 125W; TO220AB
Case: TO220AB
Drain-source voltage: 1kV
Drain current: 2A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1142 Stücke:
Lieferzeit 7-14 Tag (e)
57+1.27 EUR
59+ 1.22 EUR
72+ 1 EUR
76+ 0.94 EUR
Mindestbestellmenge: 57
IRFD014PBF IRFD014PBF VISHAY IRFD014PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.3W; DIP4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Power dissipation: 1.3W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1531 Stücke:
Lieferzeit 7-14 Tag (e)
74+0.97 EUR
120+ 0.6 EUR
136+ 0.53 EUR
150+ 0.48 EUR
159+ 0.45 EUR
500+ 0.44 EUR
Mindestbestellmenge: 74
IRFD020PBF VISHAY sihfd020.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 2.4A; Idm: 19A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 2.4A
Pulsed drain current: 19A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFD024PBF IRFD024PBF VISHAY IRFD024PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.3W; DIP4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.8A
Power dissipation: 1.3W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFD110PBF IRFD110PBF VISHAY IRFD110PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.71A; 1.3W; DIP4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.71A
Power dissipation: 1.3W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 8.3nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3582 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
126+ 0.57 EUR
140+ 0.51 EUR
175+ 0.41 EUR
185+ 0.39 EUR
Mindestbestellmenge: 76
IRFD113PBF VISHAY sihfd113.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 800mA; Idm: 6.4A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.8A
Pulsed drain current: 6.4A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFD120PBF IRFD120PBF VISHAY IRFD120PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.94A; 1.3W; DIP4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.94A
Power dissipation: 1.3W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 16nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2083 Stücke:
Lieferzeit 7-14 Tag (e)
59+1.22 EUR
88+ 0.82 EUR
100+ 0.72 EUR
110+ 0.65 EUR
117+ 0.61 EUR
500+ 0.6 EUR
Mindestbestellmenge: 59
IRFD123PBF VISHAY sihfd123.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 10A; 1.3W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 10A
Power dissipation: 1.3W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFD210PBF IRFD210PBF VISHAY IRFD210PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.38A; 1W; DIP4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.38A
Power dissipation: 1W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 8.2nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)
42+1.7 EUR
105+ 0.69 EUR
Mindestbestellmenge: 42
IRFD220PBF IRFD220PBF VISHAY IRFD220PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.5A; 1W; DIP4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.5A
Power dissipation: 1W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 14nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1136 Stücke:
Lieferzeit 7-14 Tag (e)
62+1.16 EUR
98+ 0.73 EUR
112+ 0.64 EUR
124+ 0.58 EUR
131+ 0.55 EUR
500+ 0.54 EUR
Mindestbestellmenge: 62
IRFD224PBF VISHAY sihfd224.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 630mA; Idm: 5A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.63A
Pulsed drain current: 5A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFD320PBF IRFD320PBF VISHAY IRFD320PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.31A; 1W; DIP4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.31A
Power dissipation: 1W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 20nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.1 EUR
24+ 2.97 EUR
64+ 1.12 EUR
500+ 0.65 EUR
Mindestbestellmenge: 23
IRFD420PBF IRFD420PBF VISHAY IRFD420PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.23A; 1W; DIP4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.23A
Power dissipation: 1W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 24nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 581 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
85+ 0.85 EUR
107+ 0.67 EUR
112+ 0.64 EUR
500+ 0.63 EUR
Mindestbestellmenge: 76
IRFD9010PBF VISHAY sihfd901.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -1.1A; Idm: -8.8A; 1W; HVMDIP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -1.1A
Pulsed drain current: -8.8A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFD9014PBF IRFD9014PBF VISHAY IRFD9014PBF.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.8A; 1.3W; DIP4
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -800mA
Power dissipation: 1.3W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5129 Stücke:
Lieferzeit 7-14 Tag (e)
61+1.19 EUR
93+ 0.77 EUR
106+ 0.68 EUR
117+ 0.61 EUR
124+ 0.58 EUR
500+ 0.57 EUR
Mindestbestellmenge: 61
IRFD9020PBF IRFD9020PBF VISHAY sihfd902.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.6A; Idm: -13A; 1.3W; HVMDIP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Pulsed drain current: -13A
Power dissipation: 1.3W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)
52+1.39 EUR
55+ 1.31 EUR
62+ 1.15 EUR
117+ 0.61 EUR
124+ 0.58 EUR
Mindestbestellmenge: 52
IRFD9024PBF IRFD9024PBF VISHAY IRFD9024PBF.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.1A; 1.3W; DIP4
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.1A
Power dissipation: 1.3W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 19nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFD9110PBF IRFD9110PBF VISHAY irfd9110.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.49A; 1.3W; DIP4
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.49A
Power dissipation: 1.3W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 8.7nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 356 Stücke:
Lieferzeit 7-14 Tag (e)
65+1.1 EUR
116+ 0.62 EUR
127+ 0.57 EUR
143+ 0.5 EUR
152+ 0.47 EUR
Mindestbestellmenge: 65
IRFD9120PBF IRFD9120PBF VISHAY irfd9120.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.7A; 1.3W; DIP4
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -700mA
Power dissipation: 1.3W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1351 Stücke:
Lieferzeit 7-14 Tag (e)
65+1.1 EUR
107+ 0.67 EUR
121+ 0.59 EUR
140+ 0.51 EUR
148+ 0.49 EUR
Mindestbestellmenge: 65
IRFD9210PBF IRFD9210PBF VISHAY irfd9210.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -0.25A; 1W; DIP4
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -250mA
Power dissipation: 1W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 8.9nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2204 Stücke:
Lieferzeit 7-14 Tag (e)
64+1.13 EUR
100+ 0.72 EUR
112+ 0.64 EUR
146+ 0.49 EUR
154+ 0.46 EUR
Mindestbestellmenge: 64
IRFD9220PBF IRFD9220PBF VISHAY IRFD9220PBF.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -0.36A; 1W; DIP4
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -0.36A
Power dissipation: 1W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 234 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
87+ 0.82 EUR
103+ 0.7 EUR
109+ 0.66 EUR
110+ 0.65 EUR
500+ 0.63 EUR
Mindestbestellmenge: 76
IRFDC20PBF VISHAY sihfdc20.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 320mA; Idm: 2.6A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.32A
Pulsed drain current: 2.6A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI510GPBF VISHAY TO-220%20Fullpak_2.jpg Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 18A; 27W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Pulsed drain current: 18A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI520GPBF IRFI520GPBF VISHAY IRFI520G.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.1A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.1A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI530GPBF IRFI530GPBF VISHAY IRFI530G.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.9A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI540GPBF IRFI540GPBF VISHAY IRFI540G.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 175 Stücke:
Lieferzeit 7-14 Tag (e)
55+1.32 EUR
61+ 1.19 EUR
68+ 1.06 EUR
77+ 0.93 EUR
81+ 0.89 EUR
250+ 0.87 EUR
Mindestbestellmenge: 55
IRFI620GPBF VISHAY 91146.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.1A; Idm: 16A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.1A
Pulsed drain current: 16A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI630GPBF IRFI630GPBF VISHAY IRFI630G.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.7A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 530 Stücke:
Lieferzeit 7-14 Tag (e)
66+1.09 EUR
74+ 0.98 EUR
84+ 0.86 EUR
97+ 0.74 EUR
100+ 0.72 EUR
Mindestbestellmenge: 66
IRFI634GPBF VISHAY 91149.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5.6A; Idm: 22A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI640GPBF IRFI640GPBF VISHAY IRFI640G.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.8A; Idm: 39A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.8A
Pulsed drain current: 39A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
24+2.97 EUR
34+ 2.1 EUR
Mindestbestellmenge: 24
IRFI644GPBF IRFI644GPBF VISHAY IRFI644G.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
38+1.89 EUR
43+ 1.7 EUR
48+ 1.5 EUR
53+ 1.37 EUR
55+ 1.3 EUR
250+ 1.26 EUR
Mindestbestellmenge: 38
IRFI720GPBF VISHAY sihfi720.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.6A; Idm: 10A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI730GPBF VISHAY 91153.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.7A; Idm: 15A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.7A
Pulsed drain current: 15A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI740GLCPBF VISHAY 91155.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.7A
Pulsed drain current: 23A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI740GPBF IRFI740GPBF VISHAY irfi740gpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.4A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.4A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1978 Stücke:
Lieferzeit 7-14 Tag (e)
72+1 EUR
76+ 0.95 EUR
82+ 0.88 EUR
91+ 0.79 EUR
97+ 0.74 EUR
250+ 0.72 EUR
Mindestbestellmenge: 72
IRFI820GPBF IRFI820GPBF VISHAY IRFI820G.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.3A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.3A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 595 Stücke:
Lieferzeit 7-14 Tag (e)
59+1.22 EUR
67+ 1.07 EUR
75+ 0.96 EUR
81+ 0.89 EUR
84+ 0.86 EUR
85+ 0.84 EUR
250+ 0.8 EUR
Mindestbestellmenge: 59
IRFI830GPBF IRFI830GPBF VISHAY IRFI830G.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 498 Stücke:
Lieferzeit 7-14 Tag (e)
58+1.24 EUR
64+ 1.13 EUR
73+ 0.99 EUR
77+ 0.93 EUR
81+ 0.89 EUR
250+ 0.84 EUR
Mindestbestellmenge: 58
IRFI840GLCPBF IRFI840GLCPBF VISHAY IRFI840GLC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 416 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.77 EUR
46+ 1.59 EUR
51+ 1.42 EUR
59+ 1.23 EUR
62+ 1.16 EUR
Mindestbestellmenge: 41
IRFI840GPBF IRFI840GPBF VISHAY IRFI840GPBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI9520GPBF IRFI9520GPBF VISHAY IRFI9520G.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; 37W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.6A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI9530GPBF IRFI9530GPBF VISHAY IRFI9530G.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.4A; 42W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.4A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 345 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.43 EUR
56+ 1.29 EUR
63+ 1.14 EUR
73+ 0.99 EUR
77+ 0.93 EUR
Mindestbestellmenge: 50
IRFI9540GPBF IRFI9540GPBF VISHAY IRFI9540G.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -7.6A; 48W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -7.6A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI9610GPBF VISHAY irfi9610g.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -8A; 27W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI9620GPBF VISHAY TO-220%20Fullpak_1.jpg Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3A; Idm: -12A; 30W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI9630GPBF IRFI9630GPBF VISHAY IRFI9630GPBF.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.7A; 35W; TO220FP
Kind of package: tube
Drain-source voltage: -200V
Drain current: -2.7A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI9634GPBF IRFI9634GPBF VISHAY IRFI9634GPBF.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.6A; 35W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 488 Stücke:
Lieferzeit 7-14 Tag (e)
54+1.34 EUR
59+ 1.22 EUR
68+ 1.06 EUR
76+ 0.94 EUR
81+ 0.89 EUR
Mindestbestellmenge: 54
IRFI9640GPBF IRFI9640GPBF VISHAY IRFI9640G.pdf description Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.9A; 40W; TO220FP
Mounting: THT
Power dissipation: 40W
Polarisation: unipolar
Kind of package: tube
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
Drain-source voltage: -200V
Drain current: -3.9A
On-state resistance: 0.5Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 91 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.77 EUR
46+ 1.59 EUR
51+ 1.42 EUR
59+ 1.23 EUR
62+ 1.16 EUR
Mindestbestellmenge: 41
IRFI9Z14GPBF VISHAY TO-220%20Fullpak_1.jpg Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.3A; Idm: -21A; 27W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI9Z24GPBF VISHAY 91171.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; 8.5A; Idm: -34A; 37W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: 8.5A
Pulsed drain current: -34A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI9Z34GPBF IRFI9Z34GPBF VISHAY IRFI9Z34G.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.5A; 42W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.5A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 206 Stücke:
Lieferzeit 7-14 Tag (e)
61+1.17 EUR
69+ 1.04 EUR
78+ 0.92 EUR
84+ 0.86 EUR
85+ 0.84 EUR
90+ 0.8 EUR
250+ 0.77 EUR
Mindestbestellmenge: 61
IRFIB5N65APBF VISHAY sihfib5n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.1A; Idm: 21A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.1A
Pulsed drain current: 21A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 930mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFIB6N60APBF IRFIB6N60APBF VISHAY IRFIB6N60A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFIB7N50APBF IRFIB7N50APBF VISHAY irfib7n50a.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 44A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.6A
Pulsed drain current: 44A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFIBC30GPBF IRFIBC30GPBF VISHAY IRFIBC30GPBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 469 Stücke:
Lieferzeit 7-14 Tag (e)
46+1.57 EUR
51+ 1.42 EUR
58+ 1.24 EUR
65+ 1.12 EUR
68+ 1.06 EUR
250+ 1.04 EUR
Mindestbestellmenge: 46
IRFIBC40GPBF IRFIBC40GPBF VISHAY IRFIBC40GPBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; 40W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 854 Stücke:
Lieferzeit 7-14 Tag (e)
29+2.53 EUR
31+ 2.36 EUR
39+ 1.87 EUR
41+ 1.77 EUR
Mindestbestellmenge: 29
IRFIBE20GPBF VISHAY 91183.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.4A; Idm: 5.6A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.4A
Pulsed drain current: 5.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFIBE30GPBF IRFIBE30GPBF VISHAY IRFIBE30G.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.4A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.4A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 67 Stücke:
Lieferzeit 7-14 Tag (e)
35+2.1 EUR
38+ 1.89 EUR
43+ 1.67 EUR
53+ 1.37 EUR
55+ 1.3 EUR
Mindestbestellmenge: 35
IRFIBF20GPBF IRFIBF20GPBF VISHAY IRFIBF20G.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 0.79A; 30W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Power dissipation: 30W
Gate charge: 38nC
Polarisation: unipolar
Drain current: 0.79A
Kind of channel: enhanced
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
37+1.96 EUR
41+ 1.74 EUR
46+ 1.56 EUR
55+ 1.3 EUR
59+ 1.23 EUR
Mindestbestellmenge: 37
IRFBG20PBF IRFBG20PBF.pdf
IRFBG20PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.86A; 54W; TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 1kV
Drain current: 0.86A
On-state resistance: 11Ω
Type of transistor: N-MOSFET
Case: TO220AB
Power dissipation: 54W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 940 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
63+1.14 EUR
67+ 1.07 EUR
73+ 0.98 EUR
82+ 0.88 EUR
87+ 0.83 EUR
250+ 0.8 EUR
Mindestbestellmenge: 63
IRFBG20PBF-BE3 sihbg20.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.4A; Idm: 5.6A; 54W; TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 5.6A
Drain-source voltage: 1kV
Drain current: 1.4A
On-state resistance: 11Ω
Type of transistor: N-MOSFET
Case: TO220AB
Power dissipation: 54W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFBG30PBF IRFBG30PBF.pdf
IRFBG30PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 125W; TO220AB
Case: TO220AB
Drain-source voltage: 1kV
Drain current: 2A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1142 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
57+1.27 EUR
59+ 1.22 EUR
72+ 1 EUR
76+ 0.94 EUR
Mindestbestellmenge: 57
IRFD014PBF IRFD014PBF.pdf
IRFD014PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.3W; DIP4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Power dissipation: 1.3W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1531 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
74+0.97 EUR
120+ 0.6 EUR
136+ 0.53 EUR
150+ 0.48 EUR
159+ 0.45 EUR
500+ 0.44 EUR
Mindestbestellmenge: 74
IRFD020PBF sihfd020.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 2.4A; Idm: 19A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 2.4A
Pulsed drain current: 19A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFD024PBF IRFD024PBF.pdf
IRFD024PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.3W; DIP4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.8A
Power dissipation: 1.3W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFD110PBF IRFD110PBF.pdf
IRFD110PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.71A; 1.3W; DIP4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.71A
Power dissipation: 1.3W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 8.3nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3582 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
76+0.94 EUR
126+ 0.57 EUR
140+ 0.51 EUR
175+ 0.41 EUR
185+ 0.39 EUR
Mindestbestellmenge: 76
IRFD113PBF sihfd113.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 800mA; Idm: 6.4A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.8A
Pulsed drain current: 6.4A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFD120PBF IRFD120PBF.pdf
IRFD120PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.94A; 1.3W; DIP4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.94A
Power dissipation: 1.3W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 16nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2083 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
59+1.22 EUR
88+ 0.82 EUR
100+ 0.72 EUR
110+ 0.65 EUR
117+ 0.61 EUR
500+ 0.6 EUR
Mindestbestellmenge: 59
IRFD123PBF sihfd123.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 10A; 1.3W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 10A
Power dissipation: 1.3W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFD210PBF IRFD210PBF.pdf
IRFD210PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.38A; 1W; DIP4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.38A
Power dissipation: 1W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 8.2nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
42+1.7 EUR
105+ 0.69 EUR
Mindestbestellmenge: 42
IRFD220PBF IRFD220PBF.pdf
IRFD220PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.5A; 1W; DIP4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.5A
Power dissipation: 1W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 14nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1136 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
62+1.16 EUR
98+ 0.73 EUR
112+ 0.64 EUR
124+ 0.58 EUR
131+ 0.55 EUR
500+ 0.54 EUR
Mindestbestellmenge: 62
IRFD224PBF sihfd224.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 630mA; Idm: 5A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.63A
Pulsed drain current: 5A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFD320PBF IRFD320PBF.pdf
IRFD320PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.31A; 1W; DIP4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.31A
Power dissipation: 1W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 20nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
23+3.1 EUR
24+ 2.97 EUR
64+ 1.12 EUR
500+ 0.65 EUR
Mindestbestellmenge: 23
IRFD420PBF IRFD420PBF.pdf
IRFD420PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.23A; 1W; DIP4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.23A
Power dissipation: 1W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 24nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 581 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
76+0.94 EUR
85+ 0.85 EUR
107+ 0.67 EUR
112+ 0.64 EUR
500+ 0.63 EUR
Mindestbestellmenge: 76
IRFD9010PBF sihfd901.pdf
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -1.1A; Idm: -8.8A; 1W; HVMDIP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -1.1A
Pulsed drain current: -8.8A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFD9014PBF IRFD9014PBF.pdf
IRFD9014PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.8A; 1.3W; DIP4
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -800mA
Power dissipation: 1.3W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5129 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
61+1.19 EUR
93+ 0.77 EUR
106+ 0.68 EUR
117+ 0.61 EUR
124+ 0.58 EUR
500+ 0.57 EUR
Mindestbestellmenge: 61
IRFD9020PBF sihfd902.pdf
IRFD9020PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.6A; Idm: -13A; 1.3W; HVMDIP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Pulsed drain current: -13A
Power dissipation: 1.3W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
52+1.39 EUR
55+ 1.31 EUR
62+ 1.15 EUR
117+ 0.61 EUR
124+ 0.58 EUR
Mindestbestellmenge: 52
IRFD9024PBF IRFD9024PBF.pdf
IRFD9024PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.1A; 1.3W; DIP4
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.1A
Power dissipation: 1.3W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 19nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFD9110PBF irfd9110.pdf
IRFD9110PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.49A; 1.3W; DIP4
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.49A
Power dissipation: 1.3W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 8.7nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 356 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
65+1.1 EUR
116+ 0.62 EUR
127+ 0.57 EUR
143+ 0.5 EUR
152+ 0.47 EUR
Mindestbestellmenge: 65
IRFD9120PBF irfd9120.pdf
IRFD9120PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.7A; 1.3W; DIP4
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -700mA
Power dissipation: 1.3W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1351 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
65+1.1 EUR
107+ 0.67 EUR
121+ 0.59 EUR
140+ 0.51 EUR
148+ 0.49 EUR
Mindestbestellmenge: 65
IRFD9210PBF irfd9210.pdf
IRFD9210PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -0.25A; 1W; DIP4
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -250mA
Power dissipation: 1W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 8.9nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2204 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
64+1.13 EUR
100+ 0.72 EUR
112+ 0.64 EUR
146+ 0.49 EUR
154+ 0.46 EUR
Mindestbestellmenge: 64
IRFD9220PBF IRFD9220PBF.pdf
IRFD9220PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -0.36A; 1W; DIP4
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -0.36A
Power dissipation: 1W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 234 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
76+0.94 EUR
87+ 0.82 EUR
103+ 0.7 EUR
109+ 0.66 EUR
110+ 0.65 EUR
500+ 0.63 EUR
Mindestbestellmenge: 76
IRFDC20PBF sihfdc20.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 320mA; Idm: 2.6A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.32A
Pulsed drain current: 2.6A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI510GPBF TO-220%20Fullpak_2.jpg
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 18A; 27W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Pulsed drain current: 18A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI520GPBF IRFI520G.pdf
IRFI520GPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.1A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.1A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI530GPBF IRFI530G.pdf
IRFI530GPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.9A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI540GPBF IRFI540G.pdf
IRFI540GPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 175 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
55+1.32 EUR
61+ 1.19 EUR
68+ 1.06 EUR
77+ 0.93 EUR
81+ 0.89 EUR
250+ 0.87 EUR
Mindestbestellmenge: 55
IRFI620GPBF 91146.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.1A; Idm: 16A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.1A
Pulsed drain current: 16A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI630GPBF IRFI630G.pdf
IRFI630GPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.7A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 530 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
66+1.09 EUR
74+ 0.98 EUR
84+ 0.86 EUR
97+ 0.74 EUR
100+ 0.72 EUR
Mindestbestellmenge: 66
IRFI634GPBF 91149.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5.6A; Idm: 22A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI640GPBF IRFI640G.pdf
IRFI640GPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.8A; Idm: 39A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.8A
Pulsed drain current: 39A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
24+2.97 EUR
34+ 2.1 EUR
Mindestbestellmenge: 24
IRFI644GPBF IRFI644G.pdf
IRFI644GPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
38+1.89 EUR
43+ 1.7 EUR
48+ 1.5 EUR
53+ 1.37 EUR
55+ 1.3 EUR
250+ 1.26 EUR
Mindestbestellmenge: 38
IRFI720GPBF sihfi720.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.6A; Idm: 10A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI730GPBF 91153.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.7A; Idm: 15A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.7A
Pulsed drain current: 15A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI740GLCPBF description 91155.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.7A
Pulsed drain current: 23A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI740GPBF irfi740gpbf.pdf
IRFI740GPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.4A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.4A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1978 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
72+1 EUR
76+ 0.95 EUR
82+ 0.88 EUR
91+ 0.79 EUR
97+ 0.74 EUR
250+ 0.72 EUR
Mindestbestellmenge: 72
IRFI820GPBF IRFI820G.pdf
IRFI820GPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.3A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.3A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 595 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
59+1.22 EUR
67+ 1.07 EUR
75+ 0.96 EUR
81+ 0.89 EUR
84+ 0.86 EUR
85+ 0.84 EUR
250+ 0.8 EUR
Mindestbestellmenge: 59
IRFI830GPBF IRFI830G.pdf
IRFI830GPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 498 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
58+1.24 EUR
64+ 1.13 EUR
73+ 0.99 EUR
77+ 0.93 EUR
81+ 0.89 EUR
250+ 0.84 EUR
Mindestbestellmenge: 58
IRFI840GLCPBF IRFI840GLC.pdf
IRFI840GLCPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 416 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
41+1.77 EUR
46+ 1.59 EUR
51+ 1.42 EUR
59+ 1.23 EUR
62+ 1.16 EUR
Mindestbestellmenge: 41
IRFI840GPBF IRFI840GPBF.pdf
IRFI840GPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI9520GPBF IRFI9520G.pdf
IRFI9520GPBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; 37W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.6A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI9530GPBF IRFI9530G.pdf
IRFI9530GPBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.4A; 42W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.4A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 345 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
50+1.43 EUR
56+ 1.29 EUR
63+ 1.14 EUR
73+ 0.99 EUR
77+ 0.93 EUR
Mindestbestellmenge: 50
IRFI9540GPBF IRFI9540G.pdf
IRFI9540GPBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -7.6A; 48W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -7.6A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI9610GPBF irfi9610g.pdf
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -8A; 27W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI9620GPBF TO-220%20Fullpak_1.jpg
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3A; Idm: -12A; 30W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI9630GPBF IRFI9630GPBF.pdf
IRFI9630GPBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.7A; 35W; TO220FP
Kind of package: tube
Drain-source voltage: -200V
Drain current: -2.7A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI9634GPBF IRFI9634GPBF.pdf
IRFI9634GPBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.6A; 35W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 488 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
54+1.34 EUR
59+ 1.22 EUR
68+ 1.06 EUR
76+ 0.94 EUR
81+ 0.89 EUR
Mindestbestellmenge: 54
IRFI9640GPBF description IRFI9640G.pdf
IRFI9640GPBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.9A; 40W; TO220FP
Mounting: THT
Power dissipation: 40W
Polarisation: unipolar
Kind of package: tube
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
Drain-source voltage: -200V
Drain current: -3.9A
On-state resistance: 0.5Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 91 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
41+1.77 EUR
46+ 1.59 EUR
51+ 1.42 EUR
59+ 1.23 EUR
62+ 1.16 EUR
Mindestbestellmenge: 41
IRFI9Z14GPBF TO-220%20Fullpak_1.jpg
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.3A; Idm: -21A; 27W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI9Z24GPBF 91171.pdf
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; 8.5A; Idm: -34A; 37W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: 8.5A
Pulsed drain current: -34A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFI9Z34GPBF IRFI9Z34G.pdf
IRFI9Z34GPBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.5A; 42W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.5A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 206 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
61+1.17 EUR
69+ 1.04 EUR
78+ 0.92 EUR
84+ 0.86 EUR
85+ 0.84 EUR
90+ 0.8 EUR
250+ 0.77 EUR
Mindestbestellmenge: 61
IRFIB5N65APBF sihfib5n.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.1A; Idm: 21A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.1A
Pulsed drain current: 21A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 930mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFIB6N60APBF IRFIB6N60A.pdf
IRFIB6N60APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFIB7N50APBF irfib7n50a.pdf
IRFIB7N50APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 44A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.6A
Pulsed drain current: 44A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFIBC30GPBF IRFIBC30GPBF.pdf
IRFIBC30GPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 469 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
46+1.57 EUR
51+ 1.42 EUR
58+ 1.24 EUR
65+ 1.12 EUR
68+ 1.06 EUR
250+ 1.04 EUR
Mindestbestellmenge: 46
IRFIBC40GPBF IRFIBC40GPBF.pdf
IRFIBC40GPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; 40W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 854 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
29+2.53 EUR
31+ 2.36 EUR
39+ 1.87 EUR
41+ 1.77 EUR
Mindestbestellmenge: 29
IRFIBE20GPBF 91183.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.4A; Idm: 5.6A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.4A
Pulsed drain current: 5.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFIBE30GPBF IRFIBE30G.pdf
IRFIBE30GPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.4A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.4A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 67 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
35+2.1 EUR
38+ 1.89 EUR
43+ 1.67 EUR
53+ 1.37 EUR
55+ 1.3 EUR
Mindestbestellmenge: 35
IRFIBF20GPBF IRFIBF20G.pdf
IRFIBF20GPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 0.79A; 30W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Power dissipation: 30W
Gate charge: 38nC
Polarisation: unipolar
Drain current: 0.79A
Kind of channel: enhanced
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
37+1.96 EUR
41+ 1.74 EUR
46+ 1.56 EUR
55+ 1.3 EUR
59+ 1.23 EUR
Mindestbestellmenge: 37
Wählen Sie Seite:   [  << Vorherige Seite ]  1 486 657 658 659 660 661 662 663 664 665 666 667 972 1458 1944 2430 2916 3402 3888 4374 4860 4863  [ Nächste Seite >> ]