Produkte > IPF
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPF009N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 49A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| IPF009N04NF2SATMA1 | INFINEON | Description: INFINEON - IPF009N04NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 302 A, 790 µohm, TO-263, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 302A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.4V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pins Produktpalette: StrongIRFET 2 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 790µohm SVHC: Lead (17-Jan-2023) | auf Bestellung 790 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IPF009N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 49A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| IPF009N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 49A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| IPF009N04NF2SATMA1 | Infineon Technologies | Description: TRENCH <= 40V Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 302A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 249µA Supplier Device Package: PG-TO263-7-U02 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V | auf Bestellung 754 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF009N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 49A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| IPF009N04NF2SATMA1 | INFINEON | Description: INFINEON - IPF009N04NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 302 A, 790 µohm, TO-263, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 302A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.4V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pins Produktpalette: StrongIRFET 2 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 790µohm SVHC: Lead (17-Jan-2023) | auf Bestellung 790 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IPF009N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 49A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| IPF009N04NF2SATMA1 | Infineon Technologies | MOSFET TRENCH <= 40V | auf Bestellung 829 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF009N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 49A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IPF009N04NF2SATMA1 | Infineon Technologies | Description: TRENCH <= 40V Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 302A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 249µA Supplier Device Package: PG-TO263-7-U02 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||
| IPF010N04NF2SATMA1 | Infineon Technologies | Description: TRENCH <= 40V Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 289A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 189µA Supplier Device Package: PG-TO263-7-U02 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||
| IPF010N04NF2SATMA1 | Infineon Technologies | MOSFET TRENCH <= 40V | auf Bestellung 965 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF010N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 46A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| IPF010N04NF2SATMA1 | Infineon Technologies | Description: TRENCH <= 40V Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 289A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 189µA Supplier Device Package: PG-TO263-7-U02 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 20 V | auf Bestellung 1206 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF010N06NF2SATMA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | auf Bestellung 245 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF010N06NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 44A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| IPF010N06NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 44A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| IPF010N06NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 44A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 790 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| IPF010N06NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 293A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 246µA Supplier Device Package: PG-TO263-7-U02 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
| IPF010N06NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 44A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 790 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| IPF010N06NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 44A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| IPF010N06NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 44A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| IPF010N06NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 293A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 246µA Supplier Device Package: PG-TO263-7-U02 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V | auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF010N06NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 44A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| IPF011N08NM6ATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | |||||||||||||||
| IPF011N08NM6ATMA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | Produkt ist nicht verfügbar | |||||||||||||||
| IPF011N08NM6ATMA1 | Infineon Technologies | TRENCH 40<-<100V | Produkt ist nicht verfügbar | |||||||||||||||
| IPF012N06NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 282A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 186µA Supplier Device Package: PG-TO263-7-U02 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
| IPF012N06NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 41A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| IPF012N06NF2SATMA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | auf Bestellung 236 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF012N06NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 41A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IPF012N06NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 41A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| IPF012N06NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 41A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| IPF012N06NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 282A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 186µA Supplier Device Package: PG-TO263-7-U02 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V | auf Bestellung 795 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF012N06NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 41A 7-Pin(6+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| IPF012N06NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 41A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| IPF013N04NF2SATMA1 | Infineon Technologies | Description: TRENCH <= 40V Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 232A (Tc) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 188W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 126µA Supplier Device Package: PG-TO263-7-U02 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF013N04NF2SATMA1 | Infineon Technologies | MOSFET TRENCH <= 40V | auf Bestellung 283 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF013N04NF2SATMA1 | Infineon Technologies | Description: TRENCH <= 40V Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 232A (Tc) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 188W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 126µA Supplier Device Package: PG-TO263-7-U02 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF013N04NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 40A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| IPF014N08NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V PG-TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 282A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 267µA Supplier Device Package: PG-TO263-7-14 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V | auf Bestellung 1054 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF014N08NF2SATMA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | auf Bestellung 1064 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF014N08NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V PG-TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 282A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 267µA Supplier Device Package: PG-TO263-7-14 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF014N08NF2SATMA1 | Infineon Technologies | N Channel Power Mosfet | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IPF015N10N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 35A T/R | Produkt ist nicht verfügbar | |||||||||||||||
| IPF015N10N5ATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Cut Tape (CT) Part Status: Active Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 276A (Tc) Rds On (Max) @ Id, Vgs: 1.53mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 279µA Supplier Device Package: PG-TO263-7-1 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF015N10N5ATMA1 | INFINEON | Description: INFINEON - IPF015N10N5ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 276 A, 0.0014 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 276A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0014ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 236 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IPF015N10N5ATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tape & Reel (TR) Part Status: Active Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 276A (Tc) Rds On (Max) @ Id, Vgs: 1.53mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 279µA Supplier Device Package: PG-TO263-7-1 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF015N10N5ATMA1 | INFINEON | Description: INFINEON - IPF015N10N5ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 276 A, 0.0014 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 276A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0014ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 236 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IPF015N10N5ATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | auf Bestellung 197 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF016N06NF2SATMA1 | INFINEON | Description: INFINEON - IPF016N06NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 223 A, 0.0013 ohm, TO-263, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 223A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.3V euEccn: NLR Verlustleistung: 188W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: StrongIRFET 2 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0013ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 475 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IPF016N06NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 223A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 188W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 129µA Supplier Device Package: PG-TO263-7-U02 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 30 V | auf Bestellung 748 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF016N06NF2SATMA1 | INFINEON | Description: INFINEON - IPF016N06NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 223 A, 0.0013 ohm, TO-263, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 223A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.3V euEccn: NLR Verlustleistung: 188W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: StrongIRFET 2 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0013ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 475 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IPF016N06NF2SATMA1 | Infineon Technologies | MOSFET | auf Bestellung 265 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF016N06NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 35A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| IPF016N06NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 223A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 188W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 129µA Supplier Device Package: PG-TO263-7-U02 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
| IPF016N10NF2SATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 274A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 267µA Supplier Device Package: PG-TO263-7-14 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
| IPF016N10NF2SATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | auf Bestellung 1123 Stücke: Lieferzeit 94-98 Tag (e) |
| ||||||||||||||
| IPF016N10NF2SATMA1 | Infineon Technologies | SP005578929 | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IPF016N10NF2SATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 274A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 267µA Supplier Device Package: PG-TO263-7-14 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
| IPF017N08NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V PG-TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 259A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 194µA Supplier Device Package: PG-TO263-7-14 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 40 V | auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF017N08NF2SATMA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | auf Bestellung 790 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF017N08NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V PG-TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 259A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 194µA Supplier Device Package: PG-TO263-7-14 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 40 V | auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF017N08NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 33A 8-Pin(7+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IPF019N12NM6ATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | auf Bestellung 927 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF021N13NM6ATMA1 | Infineon Technologies | TRENCH >=100V | Produkt ist nicht verfügbar | |||||||||||||||
| IPF021N13NM6ATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | auf Bestellung 930 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF023N08NF2SATMA1 | Infineon Technologies | N Channel Power Mosfet | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IPF023N08NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V PG-TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 139µA Supplier Device Package: PG-TO263-7-14 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 40 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF023N08NF2SATMA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | auf Bestellung 799 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF023N08NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V PG-TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 139µA Supplier Device Package: PG-TO263-7-14 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 40 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF024N10NF2SATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | auf Bestellung 786 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF024N10NF2SATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 227A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 169µA Supplier Device Package: PG-TO263-7-14 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V | auf Bestellung 786 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF024N10NF2SATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 227A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 169µA Supplier Device Package: PG-TO263-7-14 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
| IPF024N10NF2SATMA1 | Infineon Technologies | N Channel Power Mosfet | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IPF031N13NM6ATMA1 | Infineon Technologies | TRENCH >=100V | Produkt ist nicht verfügbar | |||||||||||||||
| IPF031N13NM6ATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF039N08NF2SATMA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | auf Bestellung 799 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF039N08NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V PG-TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 126A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 85µA Supplier Device Package: PG-TO263-7-14 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V | auf Bestellung 682 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF039N08NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V PG-TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 126A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 85µA Supplier Device Package: PG-TO263-7-14 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||
| IPF039N08NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 22A | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IPF041N10NF2SATMA1 | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| IPF042N10NF2SATMA1 | INFINEON | Description: INFINEON - IPF042N10NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 139 A, 0.0037 ohm, TO-263, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 139A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 167W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: StronglRFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0037ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1300 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IPF042N10NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 21A 8-Pin(7+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IPF042N10NF2SATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | auf Bestellung 540 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF042N10NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 21A 8-Pin(7+Tab) D2PAK T/R | auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| IPF042N10NF2SATMA1 | Infineon Technologies | Description: MOSFET Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc) Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 93µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V | auf Bestellung 281 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF042N10NF2SATMA1 | INFINEON | Description: INFINEON - IPF042N10NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 139 A, 0.0037 ohm, TO-263, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 139A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 167W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: StronglRFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0037ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1300 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IPF042N10NF2SATMA1 | Infineon Technologies | Description: MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc) Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 93µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
| IPF049N10NF2SATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | |||||||||||||||
| IPF049N10NF2SATMA1 | Infineon Technologies | SP005578921 | Produkt ist nicht verfügbar | |||||||||||||||
| IPF04N03LA | Infineon Technologies | Description: MOSFET N-CH 25V 50A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 50A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: PG-TO252-3-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||
| IPF04N03LA G | Infineon Technologies | Description: MOSFET N-CH 25V 50A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 50A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: PG-TO252-3-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||
| IPF050N03LG | Infineon | 0724+ | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| IPF050N10NF2SATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | auf Bestellung 609 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF050N10NF2SATMA1 | Infineon Technologies | Description: MOSFET Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 117A (Tc) Rds On (Max) @ Id, Vgs: 5.05mOhm @ 60A, 10V Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 84µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V | auf Bestellung 1321 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF050N10NF2SATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 19A 8-Pin(7+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| IPF050N10NF2SATMA1 | Infineon Technologies | Description: MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 117A (Tc) Rds On (Max) @ Id, Vgs: 5.05mOhm @ 60A, 10V Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 84µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF05N03LA G | Infineon Technologies | Description: MOSFET N-CH 25V 50A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: PG-TO252-3-23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||
| IPF05N03LAG | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: PG-TO252-3-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V | auf Bestellung 24746 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF067N20NM6ATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 138A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 15V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 253µA Supplier Device Package: PG-TO263-7-3 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| IPF067N20NM6ATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | auf Bestellung 895 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF067N20NM6ATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 138A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 15V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 253µA Supplier Device Package: PG-TO263-7-3 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V | auf Bestellung 961 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF06N03LA | Infineon Technologies | MOSFET N-KANAL POWER MOS | Produkt ist nicht verfügbar | |||||||||||||||
| IPF06N03LA G | Infineon Technologies | Description: MOSFET N-CH 25V 50A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: PG-TO252-3-23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||
| IPF06N03LAG | Infineon Technologies | MOSFET N-Channel MOSFET 20-200V | Produkt ist nicht verfügbar | |||||||||||||||
| IPF09N03LA | Infineon Technologies | Description: MOSFET N-CH 25V 50A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 30A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-TO252-3-23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||
| IPF09N03LA | Infineon Technologies | MOSFET N-KANAL POWER MOS | Produkt ist nicht verfügbar | |||||||||||||||
| IPF09N03LA G | Infineon Technologies | Description: MOSFET N-CH 25V 50A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 30A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-TO252-3-23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||
| IPF09N03LAG | Infineon Technologies | MOSFET N-Channel MOSFET 20-200V | Produkt ist nicht verfügbar | |||||||||||||||
| IPF105N03 | infineon | 07+ | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| IPF105N03LG | infineon | 07+ | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| IPF10N03LA | Infineon Technologies | Description: MOSFET N-CH 25V 30A TO252-3 | Produkt ist nicht verfügbar | |||||||||||||||
| IPF10N03LA | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||
| IPF10N03LA G | Infineon Technologies | Description: MOSFET N-CH 25V 30A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 30A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-TO252-3-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1358 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||
| IPF129N20NM6ATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF13N03LA | Infineon Technologies | MOSFET N-KANAL POWER MOS | Produkt ist nicht verfügbar | |||||||||||||||
| IPF13N03LA G | Infineon Technologies | Description: MOSFET N-CH 25V 30A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-TO252-3-23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V | auf Bestellung 448 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| IPF13N03LA G | Infineon Technologies | MOSFET N-Ch 25V 30A DPAK-2 | Produkt ist nicht verfügbar | |||||||||||||||
| IPF13N03LA G | Infineon Technologies | Description: MOSFET N-CH 25V 30A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-TO252-3-23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||
| IPF13N03LAG | Infineon Technologies | Description: N-CHANNEL POWER MOSFET | auf Bestellung 25000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
| IPF7473TRPBF | IR | SOP8 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| IPFH6N03LA G | Infineon Technologies | Description: MOSFET N-CH 25V 50A DPAK | Produkt ist nicht verfügbar |