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IPF050N10NF2SATMA1

IPF050N10NF2SATMA1 Infineon Technologies

Infineon-IPF050N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4a836aa1acd Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 117A (Tc)
Rds On (Max) @ Id, Vgs: 5.05mOhm @ 60A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+1.97 EUR
Mindestbestellmenge: 800
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Technische Details IPF050N10NF2SATMA1 Infineon Technologies

Description: MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 117A (Tc), Rds On (Max) @ Id, Vgs: 5.05mOhm @ 60A, 10V, Power Dissipation (Max): 3.8W (Ta), 150W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 84µA, Supplier Device Package: PG-TO263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V.

Weitere Produktangebote IPF050N10NF2SATMA1 nach Preis ab 1.58 EUR bis 3.52 EUR

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Preis ohne MwSt
IPF050N10NF2SATMA1 IPF050N10NF2SATMA1 Hersteller : Infineon Technologies Infineon_IPF050N10NF2S_DataSheet_v02_00_EN-3107307.pdf MOSFET TRENCH >=100V
auf Bestellung 599 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.5 EUR
10+ 2.92 EUR
100+ 2.32 EUR
250+ 2.15 EUR
500+ 1.95 EUR
800+ 1.65 EUR
2400+ 1.58 EUR
IPF050N10NF2SATMA1 IPF050N10NF2SATMA1 Hersteller : Infineon Technologies Infineon-IPF050N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4a836aa1acd Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 117A (Tc)
Rds On (Max) @ Id, Vgs: 5.05mOhm @ 60A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
auf Bestellung 1321 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.52 EUR
10+ 2.93 EUR
100+ 2.33 EUR
Mindestbestellmenge: 5
IPF050N10NF2SATMA1 Hersteller : Infineon Technologies infineon-ipf050n10nf2s-datasheet-v02_00-en.pdf Trans MOSFET N-CH 100V 19A 8-Pin(7+Tab) D2PAK T/R
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