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IQD-DB1M-01AIQRF TECHCategory: RF modules
Description: Module: DALI Bridge; GFSK; 868MHz; DALI; -101dBm; 10dBm; 8.3/11.8mA
Type of communications module: DALI Bridge
Kind of modulation: GFSK
Frequency: 868MHz
Interface: DALI
Receiver sensitivity: -101dBm
Transmitter output power: 10dBm
Dimensions: 88x38x22mm
TX/RX supply current: 8.3/11.8mA
Operating temperature: -10...60°C
Range: 130m
Communictions protocol: DALI
Kind of connector: screw
Components: DCTR-76D
Kit contents: base board
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
2+47.72 EUR
5+ 46.19 EUR
Mindestbestellmenge: 2
IQD-DB1M-01AIQRF TECHCategory: RF modules
Description: Module: DALI Bridge; GFSK; 868MHz; DALI; -101dBm; 10dBm; 8.3/11.8mA
Type of communications module: DALI Bridge
Kind of modulation: GFSK
Frequency: 868MHz
Interface: DALI
Receiver sensitivity: -101dBm
Transmitter output power: 10dBm
Dimensions: 88x38x22mm
TX/RX supply current: 8.3/11.8mA
Operating temperature: -10...60°C
Range: 130m
Communictions protocol: DALI
Kind of connector: screw
Components: DCTR-76D
Kit contents: base board
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
2+47.72 EUR
5+ 46.19 EUR
Mindestbestellmenge: 2
IQD-GW-02IQRF TECHCategory: RF modules
Description: Module: gateway; GFSK; 868MHz; Ethernet,USB; -101dBm; 10dBm
Type of communications module: gateway
Kind of modulation: GFSK
Frequency: 868MHz
Interface: Ethernet; USB
Receiver sensitivity: -101dBm
Transmitter output power: 10dBm
Dimensions: 50x54x36mm
Operating temperature: -10...40°C
Range: 400m
Kind of connector: RJ45; USB A; USB B micro
Components: DCTR-76D
Kit contents: base board
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
1+218.43 EUR
3+ 214.5 EUR
IQD-GW-02IQRF TECHCategory: RF modules
Description: Module: gateway; GFSK; 868MHz; Ethernet,USB; -101dBm; 10dBm
Type of communications module: gateway
Kind of modulation: GFSK
Frequency: 868MHz
Interface: Ethernet; USB
Receiver sensitivity: -101dBm
Transmitter output power: 10dBm
Dimensions: 50x54x36mm
Operating temperature: -10...40°C
Range: 400m
Kind of connector: RJ45; USB A; USB B micro
Components: DCTR-76D
Kit contents: base board
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
1+218.43 EUR
3+ 214.5 EUR
IQD005N04NM6ATMA1Infineon TechnologiesN-channel Power MOSFET
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
25+6.37 EUR
30+ 5.18 EUR
32+ 4.66 EUR
100+ 3.04 EUR
Mindestbestellmenge: 25
IQD005N04NM6ATMA1Infineon TechnologiesTRENCH <= 40V
Produkt ist nicht verfügbar
IQD005N04NM6ATMA1Infineon TechnologiesN-channel Power MOSFET
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
25+6.37 EUR
30+ 5.18 EUR
32+ 4.66 EUR
100+ 3.04 EUR
Mindestbestellmenge: 25
IQD005N04NM6ATMA1Infineon TechnologiesDescription: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Produkt ist nicht verfügbar
IQD005N04NM6ATMA1Infineon TechnologiesMOSFET TRENCH <= 40V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.78 EUR
10+ 5.68 EUR
25+ 5.37 EUR
100+ 4.59 EUR
250+ 4.35 EUR
500+ 4.1 EUR
1000+ 3.5 EUR
IQD005N04NM6ATMA1Infineon TechnologiesN-channel Power MOSFET
Produkt ist nicht verfügbar
IQD005N04NM6ATMA1
Produktcode: 198771		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IQD005N04NM6ATMA1Infineon TechnologiesDescription: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
auf Bestellung 5016 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.81 EUR
10+ 5.72 EUR
100+ 4.62 EUR
500+ 4.11 EUR
1000+ 3.52 EUR
2000+ 3.31 EUR
Mindestbestellmenge: 3
IQD005N04NM6CGATMA1INFINEONDescription: INFINEON - IQD005N04NM6CGATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 610 A, 420 µohm, TTFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 610A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.8V
euEccn: NLR
Verlustleistung: 333W
Bauform - Transistor: TTFN
Anzahl der Pins: 9Pin(s)
Produktpalette: OptiMOS 6 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 420µohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 4960 Stücke:
Lieferzeit 14-21 Tag (e)
IQD005N04NM6CGATMA1Infineon TechnologiesDescription: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
auf Bestellung 4630 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.81 EUR
10+ 6.12 EUR
25+ 5.78 EUR
100+ 5.01 EUR
250+ 4.75 EUR
500+ 4.27 EUR
1000+ 3.6 EUR
2500+ 3.42 EUR
Mindestbestellmenge: 3
IQD005N04NM6CGATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 58A 9-Pin TTFN EP T/R
Produkt ist nicht verfügbar
IQD005N04NM6CGATMA1INFINEONDescription: INFINEON - IQD005N04NM6CGATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 610 A, 420 µohm, TTFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 610A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.8V
euEccn: NLR
Verlustleistung: 333W
Bauform - Transistor: TTFN
Anzahl der Pins: 9Pin(s)
Produktpalette: OptiMOS 6 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 420µohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 4960 Stücke:
Lieferzeit 14-21 Tag (e)
IQD005N04NM6CGATMA1Infineon TechnologiesDescription: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Produkt ist nicht verfügbar
IQD005N04NM6CGATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 58A T/R
Produkt ist nicht verfügbar
IQD005N04NM6CGATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 58A 9-Pin TTFN EP T/R
Produkt ist nicht verfügbar
IQD005N04NM6CGATMA1Infineon TechnologiesMOSFET TRENCH <= 40V
auf Bestellung 4805 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.78 EUR
10+ 5.68 EUR
25+ 5.37 EUR
100+ 4.59 EUR
250+ 4.35 EUR
500+ 4.1 EUR
1000+ 3.5 EUR
IQD009N06NM5ATMA1Infineon TechnologiesN-channel Power MOSFET
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
28+5.67 EUR
32+ 4.81 EUR
34+ 4.39 EUR
100+ 3.73 EUR
250+ 3.03 EUR
Mindestbestellmenge: 28
IQD009N06NM5ATMA1Infineon TechnologiesN-channel Power MOSFET
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
28+5.67 EUR
32+ 4.81 EUR
34+ 4.39 EUR
100+ 3.73 EUR
250+ 3.03 EUR
Mindestbestellmenge: 28
IQD009N06NM5ATMA1Infineon TechnologiesDescription: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
auf Bestellung 4988 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.09 EUR
10+ 5.95 EUR
100+ 4.81 EUR
500+ 4.28 EUR
1000+ 3.66 EUR
2000+ 3.45 EUR
Mindestbestellmenge: 3
IQD009N06NM5ATMA1Infineon TechnologiesTRENCH 40<-<100V
Produkt ist nicht verfügbar
IQD009N06NM5ATMA1Infineon TechnologiesMOSFET TRENCH 40<-<100V
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.04 EUR
10+ 5.91 EUR
25+ 5.58 EUR
100+ 4.79 EUR
250+ 4.52 EUR
500+ 4.26 EUR
1000+ 3.64 EUR
IQD009N06NM5ATMA1Infineon TechnologiesN-channel Power MOSFET
Produkt ist nicht verfügbar
IQD009N06NM5ATMA1Infineon TechnologiesDescription: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
Produkt ist nicht verfügbar
IQD009N06NM5CGATMA1Infineon TechnologiesTrans MOSFET N-CH 60V 42A T/R
Produkt ist nicht verfügbar
IQD009N06NM5CGATMA1Infineon TechnologiesMOSFET TRENCH 40<-<100V
auf Bestellung 4915 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.04 EUR
10+ 5.91 EUR
25+ 5.58 EUR
100+ 4.79 EUR
250+ 4.52 EUR
500+ 4.26 EUR
1000+ 3.64 EUR
IQD009N06NM5CGATMA1Infineon TechnologiesTrans MOSFET N-CH 60V 42A 9-Pin TTFN EP T/R
Produkt ist nicht verfügbar
IQD009N06NM5CGATMA1Infineon TechnologiesTrans MOSFET N-CH 60V 42A 9-Pin TTFN EP T/R
Produkt ist nicht verfügbar
IQD016N08NM5ATMA1Infineon TechnologiesN-channel Power MOSFET
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
27+5.88 EUR
31+ 5 EUR
32+ 4.57 EUR
100+ 3.87 EUR
250+ 3.16 EUR
Mindestbestellmenge: 27
IQD016N08NM5ATMA1Infineon TechnologiesN-channel Power MOSFET
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
27+5.88 EUR
31+ 5 EUR
32+ 4.57 EUR
100+ 3.87 EUR
250+ 3.16 EUR
Mindestbestellmenge: 27
IQD016N08NM5ATMA1Infineon TechnologiesDescription: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TSON-8-U04
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
Produkt ist nicht verfügbar
IQD016N08NM5ATMA1Infineon TechnologiesN-channel Power MOSFET
Produkt ist nicht verfügbar
IQD016N08NM5ATMA1Infineon TechnologiesN-channel Power MOSFET
Produkt ist nicht verfügbar
IQD016N08NM5ATMA1Infineon TechnologiesMOSFET TRENCH 40<-<100V
auf Bestellung 5000 Stücke:
Lieferzeit 150-154 Tag (e)
1+7.3 EUR
10+ 6.14 EUR
25+ 5.79 EUR
100+ 4.96 EUR
250+ 4.68 EUR
500+ 4.4 EUR
1000+ 3.78 EUR
IQD016N08NM5ATMA1Infineon TechnologiesDescription: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TSON-8-U04
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
Produkt ist nicht verfügbar
IQD016N08NM5CGATMA1Infineon TechnologiesDescription: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
Produkt ist nicht verfügbar
IQD016N08NM5CGATMA1Infineon TechnologiesTrans MOSFET N-CH 80V 31A 9-Pin TTFN EP T/R
Produkt ist nicht verfügbar
IQD016N08NM5CGATMA1Infineon TechnologiesMOSFET TRENCH 40<-<100V
auf Bestellung 2622 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.32 EUR
10+ 6.16 EUR
25+ 5.81 EUR
100+ 4.98 EUR
250+ 4.7 EUR
500+ 4.42 EUR
1000+ 3.8 EUR
IQD016N08NM5CGATMA1Infineon TechnologiesTrans MOSFET N-CH 80V 31A 9-Pin TTFN EP T/R
Produkt ist nicht verfügbar
IQD016N08NM5CGATMA1Infineon TechnologiesDescription: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
Produkt ist nicht verfügbar
IQD016N08NM5CGATMA1Infineon TechnologiesTrans MOSFET N-CH 80V 31A 9-Pin TTFN EP T/R
Produkt ist nicht verfügbar
IQD020N10NM5ATMA1Infineon TechnologiesN-channel Power MOSFET
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
26+6.13 EUR
29+ 5.2 EUR
31+ 4.75 EUR
100+ 4.04 EUR
250+ 3.28 EUR
Mindestbestellmenge: 26
IQD020N10NM5ATMA1Infineon TechnologiesDescription: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+3.58 EUR
Mindestbestellmenge: 5000
IQD020N10NM5ATMA1Infineon TechnologiesN-channel Power MOSFET
Produkt ist nicht verfügbar
IQD020N10NM5ATMA1Infineon TechnologiesN-channel Power MOSFET
Produkt ist nicht verfügbar
IQD020N10NM5ATMA1Infineon TechnologiesDescription: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.66 EUR
10+ 6.43 EUR
100+ 5.2 EUR
500+ 4.63 EUR
1000+ 3.96 EUR
2000+ 3.73 EUR
Mindestbestellmenge: 3
IQD020N10NM5ATMA1Infineon TechnologiesMOSFET TRENCH >=100V
auf Bestellung 4980 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.6 EUR
10+ 6.41 EUR
25+ 6.04 EUR
100+ 5.17 EUR
250+ 4.89 EUR
500+ 4.59 EUR
1000+ 3.94 EUR
IQD020N10NM5ATMA1Infineon TechnologiesN-channel Power MOSFET
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
26+6.13 EUR
29+ 5.2 EUR
31+ 4.75 EUR
100+ 4.04 EUR
250+ 3.28 EUR
Mindestbestellmenge: 26
IQD020N10NM5CGATMA1Infineon TechnologiesDescription: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 273A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
auf Bestellung 4986 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.66 EUR
10+ 6.88 EUR
25+ 6.5 EUR
100+ 5.64 EUR
250+ 5.35 EUR
500+ 4.8 EUR
1000+ 4.05 EUR
2500+ 3.84 EUR
Mindestbestellmenge: 3
IQD020N10NM5CGATMA1INFINEONDescription: INFINEON - IQD020N10NM5CGATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 273 A, 0.0018 ohm, TTFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 273A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.8V
euEccn: NLR
Verlustleistung: 333W
Bauform - Transistor: TTFN
Anzahl der Pins: 9Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0018ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
IQD020N10NM5CGATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 26A 9-Pin TTFN EP T/R
Produkt ist nicht verfügbar
IQD020N10NM5CGATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 26A T/R
Produkt ist nicht verfügbar
IQD020N10NM5CGATMA1Infineon TechnologiesDescription: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 273A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
Produkt ist nicht verfügbar
IQD020N10NM5CGATMA1Infineon TechnologiesMOSFET TRENCH >=100V
auf Bestellung 4899 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.6 EUR
10+ 6.41 EUR
25+ 6.04 EUR
100+ 5.17 EUR
250+ 4.89 EUR
500+ 4.59 EUR
1000+ 3.94 EUR
IQD020N10NM5CGATMA1INFINEONDescription: INFINEON - IQD020N10NM5CGATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 273 A, 0.0018 ohm, TTFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 273A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.8V
euEccn: NLR
Verlustleistung: 333W
Bauform - Transistor: TTFN
Anzahl der Pins: 9Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0018ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
IQD020N10NM5CGATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 26A 9-Pin TTFN EP T/R
Produkt ist nicht verfügbar
IQD063N15NM5ATMA1Infineon TechnologiesN-channel Power MOSFET
Produkt ist nicht verfügbar
IQD063N15NM5ATMA1Infineon TechnologiesN-channel Power MOSFET
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
25+6.37 EUR
29+ 5.37 EUR
30+ 4.92 EUR
100+ 4.19 EUR
250+ 3.41 EUR
Mindestbestellmenge: 25
IQD063N15NM5ATMA1Infineon TechnologiesMOSFET TRENCH >=100V
auf Bestellung 4928 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.92 EUR
10+ 6.65 EUR
25+ 6.28 EUR
100+ 5.39 EUR
250+ 5.09 EUR
500+ 4.79 EUR
1000+ 4.1 EUR
IQD063N15NM5ATMA1Infineon TechnologiesDescription: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.96 EUR
10+ 6.69 EUR
100+ 5.41 EUR
500+ 4.81 EUR
1000+ 4.12 EUR
2000+ 3.88 EUR
Mindestbestellmenge: 3
IQD063N15NM5ATMA1Infineon TechnologiesN-channel Power MOSFET
Produkt ist nicht verfügbar
IQD063N15NM5ATMA1Infineon TechnologiesDescription: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+3.72 EUR
Mindestbestellmenge: 5000
IQD063N15NM5ATMA1Infineon TechnologiesN-channel Power MOSFET
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
25+6.37 EUR
29+ 5.37 EUR
30+ 4.92 EUR
100+ 4.19 EUR
250+ 3.41 EUR
Mindestbestellmenge: 25
IQD063N15NM5CGATMA1Infineon TechnologiesTrans MOSFET N-CH 150V 14.1A 9-Pin TTFN EP
Produkt ist nicht verfügbar
IQD063N15NM5CGATMA1Infineon TechnologiesDescription: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
Produkt ist nicht verfügbar
IQD063N15NM5CGATMA1Infineon TechnologiesTRENCH >=100V
Produkt ist nicht verfügbar
IQD063N15NM5CGATMA1Infineon TechnologiesTrans MOSFET N-CH 150V 14.1A 9-Pin TTFN EP
Produkt ist nicht verfügbar
IQD063N15NM5CGATMA1Infineon TechnologiesMOSFET TRENCH >=100V
auf Bestellung 4331 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.92 EUR
10+ 6.65 EUR
25+ 6.28 EUR
100+ 5.39 EUR
250+ 5.09 EUR
500+ 4.79 EUR
1000+ 4.1 EUR
IQD063N15NM5CGATMA1Infineon TechnologiesDescription: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
Produkt ist nicht verfügbar
IQDH29NE2LM5ATMA1Infineon TechnologiesDescription: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
Produkt ist nicht verfügbar
IQDH29NE2LM5ATMA1Infineon TechnologiesMOSFET TRENCH <= 40V
auf Bestellung 4756 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.23 EUR
10+ 5.24 EUR
25+ 4.95 EUR
100+ 4.24 EUR
250+ 4.01 EUR
500+ 3.77 EUR
1000+ 3.22 EUR
IQDH29NE2LM5ATMA1Infineon TechnologiesDescription: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
auf Bestellung 4884 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.3 EUR
10+ 5.29 EUR
100+ 4.28 EUR
500+ 3.8 EUR
1000+ 3.25 EUR
2000+ 3.06 EUR
Mindestbestellmenge: 3
IQDH29NE2LM5CGATMA1Infineon TechnologiesDescription: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
Produkt ist nicht verfügbar
IQDH29NE2LM5CGATMA1Infineon TechnologiesDescription: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
Produkt ist nicht verfügbar
IQDH29NE2LM5CGATMA1Infineon TechnologiesMOSFET
auf Bestellung 3978 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.25 EUR
10+ 5.26 EUR
25+ 4.96 EUR
100+ 4.26 EUR
250+ 4.03 EUR
500+ 3.78 EUR
1000+ 3.24 EUR
IQDH35N03LM5ATMA1Infineon TechnologiesDescription: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 262 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.55 EUR
10+ 5.5 EUR
100+ 4.45 EUR
500+ 3.95 EUR
1000+ 3.38 EUR
2000+ 3.19 EUR
Mindestbestellmenge: 3
IQDH35N03LM5ATMA1Infineon TechnologiesDescription: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 262 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
IQDH35N03LM5ATMA1Infineon TechnologiesMOSFET TRENCH <= 40V
auf Bestellung 4986 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.49 EUR
10+ 5.46 EUR
25+ 5.14 EUR
100+ 4.4 EUR
250+ 4.15 EUR
500+ 3.91 EUR
1000+ 3.36 EUR
IQDH35N03LM5CGATMA1Infineon TechnologiesMOSFET TRENCH <= 40V
auf Bestellung 4815 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.49 EUR
10+ 5.46 EUR
25+ 5.14 EUR
100+ 4.4 EUR
250+ 4.15 EUR
500+ 3.91 EUR
1000+ 3.36 EUR
IQDH35N03LM5CGATMA1Infineon TechnologiesTrans MOSFET N-CH 30V 66A T/R
Produkt ist nicht verfügbar
IQDH35N03LM5CGATMA1Infineon TechnologiesDescription: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-TTFN-9-U02
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
Produkt ist nicht verfügbar
IQDH35N03LM5CGATMA1INFINEONDescription: INFINEON - IQDH35N03LM5CGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 700 A, 310 µohm, TTFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 700A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 278W
Bauform - Transistor: TTFN
Anzahl der Pins: 9Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 310µohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
IQDH35N03LM5CGATMA1Infineon TechnologiesDescription: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-TTFN-9-U02
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
Produkt ist nicht verfügbar
IQDH35N03LM5CGATMA1INFINEONDescription: INFINEON - IQDH35N03LM5CGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 700 A, 310 µohm, TTFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 700A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 278W
Bauform - Transistor: TTFN
Anzahl der Pins: 9Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 310µohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
IQDH45N04LM6ATMA1Infineon TechnologiesDescription: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
auf Bestellung 4965 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.67 EUR
10+ 5.6 EUR
100+ 4.53 EUR
500+ 4.03 EUR
1000+ 3.45 EUR
2000+ 3.25 EUR
Mindestbestellmenge: 3
IQDH45N04LM6ATMA1Infineon TechnologiesMOSFET TRENCH <= 40V
auf Bestellung 4454 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.62 EUR
10+ 5.56 EUR
25+ 5.24 EUR
100+ 4.51 EUR
250+ 4.24 EUR
500+ 4 EUR
1000+ 3.41 EUR
IQDH45N04LM6ATMA1Infineon TechnologiesTRENCH <= 40V
Produkt ist nicht verfügbar
IQDH45N04LM6ATMA1Infineon TechnologiesDescription: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Produkt ist nicht verfügbar
IQDH45N04LM6CGATMA1Infineon TechnologiesDescription: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-TTFN-9-U02
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+3.22 EUR
Mindestbestellmenge: 5000
IQDH45N04LM6CGATMA1INFINEONDescription: INFINEON - IQDH45N04LM6CGATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 637 A, 400 µohm, TTFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 637A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.3V
euEccn: NLR
Verlustleistung: 333W
Bauform - Transistor: TTFN
Anzahl der Pins: 9Pin(s)
Produktpalette: OptiMOS 6 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 400µohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 4970 Stücke:
Lieferzeit 14-21 Tag (e)
IQDH45N04LM6CGATMA1Infineon TechnologiesMOSFET TRENCH <= 40V
auf Bestellung 2307 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.64 EUR
10+ 5.58 EUR
25+ 5.26 EUR
100+ 4.52 EUR
250+ 4.26 EUR
500+ 4.01 EUR
1000+ 3.43 EUR
IQDH45N04LM6CGATMA1Infineon TechnologiesDescription: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-TTFN-9-U02
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
auf Bestellung 7886 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.67 EUR
10+ 5.99 EUR
25+ 5.67 EUR
100+ 4.91 EUR
250+ 4.66 EUR
500+ 4.18 EUR
1000+ 3.53 EUR
2500+ 3.35 EUR
Mindestbestellmenge: 3
IQDH45N04LM6CGATMA1INFINEONDescription: INFINEON - IQDH45N04LM6CGATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 637 A, 400 µohm, TTFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 637A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.3V
euEccn: NLR
Verlustleistung: 333W
Bauform - Transistor: TTFN
Anzahl der Pins: 9Pin(s)
Produktpalette: OptiMOS 6 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 400µohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 4970 Stücke:
Lieferzeit 14-21 Tag (e)
IQDH45N04LM6CGATMA1Infineon TechnologiesIQDH45N04LM6CGATMA1
Produkt ist nicht verfügbar
IQDH88N06LM5ATMA1Infineon TechnologiesDescription: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
Produkt ist nicht verfügbar
IQDH88N06LM5ATMA1Infineon TechnologiesDescription: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
auf Bestellung 4831 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.93 EUR
10+ 5.83 EUR
100+ 4.71 EUR
500+ 4.19 EUR
1000+ 3.59 EUR
2000+ 3.38 EUR
Mindestbestellmenge: 3
IQDH88N06LM5ATMA1Infineon TechnologiesMOSFET TRENCH 40<-<100V
auf Bestellung 4690 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.9 EUR
10+ 5.79 EUR
25+ 5.47 EUR
100+ 4.7 EUR
250+ 4.44 EUR
500+ 4.17 EUR
1000+ 3.57 EUR
IQDH88N06LM5CGATMA1Infineon TechnologiesMOSFET TRENCH 40<-<100V
auf Bestellung 1488 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.9 EUR
10+ 5.79 EUR
25+ 5.47 EUR
100+ 4.7 EUR
250+ 4.44 EUR
500+ 4.17 EUR
1000+ 3.57 EUR