Produkte > PJD

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
PJD-62DL1OCTEKCONN05+
auf Bestellung 815 Stücke:
Lieferzeit 21-28 Tag (e)
PJD100N04-AU_L2_000A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJD100N04-AU_L2_000A1PanjitMOSFET 40V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD100N04-AU_L2_000A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJD100N04_L2_00001Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJD100N04_L2_00001PanjitMOSFET 40V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD100N04_L2_00001Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJD100P03_L2_00001PanjitMOSFET 30V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD100P03_L2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6067 pF @ 25 V
Produkt ist nicht verfügbar
PJD100P03_L2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6067 pF @ 25 V
Produkt ist nicht verfügbar
PJD10N10-L2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJD10N10_L2_00001Panjit International Inc.Description: 100V N-CHANNEL MOSFET
Produkt ist nicht verfügbar
PJD10N10_L2_00001PanjitMOSFET 100V N-Channel MOSFET
Produkt ist nicht verfügbar
PJD10N10_L2_00001Panjit International Inc.Description: 100V N-CHANNEL MOSFET
Produkt ist nicht verfügbar
PJD10P10A-L2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJD10P10A_L2_00001PanjitMOSFET 100V P-Channel MOSFET
Produkt ist nicht verfügbar
PJD10P10A_L2_00001Panjit International Inc.Description: 100V P-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 10A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1419 pF @ 25 V
Produkt ist nicht verfügbar
PJD11N06A-AU_L2_000A1PanjitMOSFET 60V N-Channel Enhancement Mode MOSFET
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.85 EUR
10+ 0.73 EUR
100+ 0.55 EUR
500+ 0.43 EUR
1000+ 0.34 EUR
3000+ 0.29 EUR
9000+ 0.26 EUR
Mindestbestellmenge: 4
PJD11N06A-AU_L2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PJD11N06A-AU_L2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
25+ 0.73 EUR
100+ 0.5 EUR
500+ 0.39 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 21
PJD11N06A_L2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJD11N06A_L2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJD12P06-AU_L2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJD12P06-AU_L2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJD12P06-AU_L2_000A1PanjitMOSFET PJ/D12P06/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-60SMP//PJ/TO252-ASD9/PJx12P06-ASE9/TO252-AS02
Produkt ist nicht verfügbar
PJD12P06_L2_00001PanjitMOSFET PJ/D12P06/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-60SMP//PJ/TO252-ASC8/PJx12P06-ASE9/TO252-AS02
Produkt ist nicht verfügbar
PJD13N10A-L2-00001PanjitMOSFET TO-252AA/MOS/TO/NFET-100SMN
Produkt ist nicht verfügbar
PJD13N10A_L2_00001Panjit International Inc.Description: 100V N-CHANNEL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
auf Bestellung 3780 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.81 EUR
26+ 0.7 EUR
100+ 0.48 EUR
500+ 0.38 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 22
PJD13N10A_L2_00001PanjitMOSFET 100V N-Channel MOSFET
Produkt ist nicht verfügbar
PJD13N10A_L2_00001Panjit International Inc.Description: 100V N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
Produkt ist nicht verfügbar
PJD14P06A-AU_L2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.06 EUR
20+ 0.92 EUR
100+ 0.71 EUR
500+ 0.56 EUR
1000+ 0.45 EUR
Mindestbestellmenge: 17
PJD14P06A-AU_L2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Produkt ist nicht verfügbar
PJD14P06A-AU_L2_000A1PanjitMOSFET 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
3+0.98 EUR
10+ 0.88 EUR
100+ 0.6 EUR
500+ 0.5 EUR
1000+ 0.43 EUR
3000+ 0.39 EUR
6000+ 0.36 EUR
Mindestbestellmenge: 3
PJD14P06A_L2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6A, 10V
Power Dissipation (Max): 3.2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Produkt ist nicht verfügbar
PJD14P06A_L2_00001PanjitMOSFET 60V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD14P06A_L2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6A, 10V
Power Dissipation (Max): 3.2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
auf Bestellung 2987 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.04 EUR
20+ 0.89 EUR
100+ 0.66 EUR
500+ 0.52 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 17
PJD15P06A-AU_L2_000A1PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15A
Pulsed drain current: -60A
Power dissipation: 25W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD15P06A-AU_L2_000A1PanjitMOSFET 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 4302 Stücke:
Lieferzeit 10-14 Tag (e)
3+0.97 EUR
10+ 0.86 EUR
100+ 0.59 EUR
500+ 0.49 EUR
1000+ 0.42 EUR
3000+ 0.38 EUR
6000+ 0.35 EUR
Mindestbestellmenge: 3
PJD15P06A-AU_L2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.38 EUR
6000+ 0.36 EUR
9000+ 0.33 EUR
Mindestbestellmenge: 3000
PJD15P06A-AU_L2_000A1PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15A
Pulsed drain current: -60A
Power dissipation: 25W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD15P06A-AU_L2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
auf Bestellung 30526 Stücke:
Lieferzeit 10-14 Tag (e)
18+1 EUR
21+ 0.87 EUR
100+ 0.6 EUR
500+ 0.5 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 18
PJD15P06A_L2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
auf Bestellung 28927 Stücke:
Lieferzeit 10-14 Tag (e)
18+0.99 EUR
21+ 0.84 EUR
100+ 0.59 EUR
500+ 0.46 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 18
PJD15P06A_L2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.33 EUR
6000+ 0.32 EUR
9000+ 0.29 EUR
Mindestbestellmenge: 3000
PJD15P06A_L2_00001PanjitMOSFET 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.06 EUR
10+ 0.9 EUR
100+ 0.68 EUR
500+ 0.53 EUR
1000+ 0.42 EUR
3000+ 0.36 EUR
6000+ 0.35 EUR
Mindestbestellmenge: 3
PJD16N06A-AU-L2PanjitMOSFET
Produkt ist nicht verfügbar
PJD16N06A-AU_L2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PJD16N06A-AU_L2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PJD16N06A-AU_L2_000A1PanjitMOSFET 60V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD16N06A-L2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJD16N06A_L2_00001PanjitMOSFET 60V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD16N06A_L2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V
Produkt ist nicht verfügbar
PJD16N06A_L2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V
Produkt ist nicht verfügbar
PJD16N08A-L2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJD16P06A-AU_L2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.45 EUR
Mindestbestellmenge: 3000
PJD16P06A-AU_L2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V
auf Bestellung 5999 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.18 EUR
18+ 1.03 EUR
100+ 0.79 EUR
500+ 0.62 EUR
1000+ 0.5 EUR
Mindestbestellmenge: 15
PJD16P06A-L2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJD16P06A_L2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V
Produkt ist nicht verfügbar
PJD16P06A_L2_00001PanJit SemiconductorPJD16P06A-L2 SMD P channel transistors
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)
95+0.76 EUR
200+ 0.36 EUR
212+ 0.34 EUR
12000+ 0.32 EUR
Mindestbestellmenge: 95
PJD16P06A_L2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V
Produkt ist nicht verfügbar
PJD16P06A_L2_00001PanjitMOSFET 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 17328 Stücke:
Lieferzeit 10-14 Tag (e)
3+0.97 EUR
10+ 0.84 EUR
100+ 0.58 EUR
500+ 0.48 EUR
1000+ 0.42 EUR
3000+ 0.36 EUR
6000+ 0.34 EUR
Mindestbestellmenge: 3
PJD18N20-L2-00001PanjitMOSFET TO-252AA/MOS/TO/NFET-200SMN
Produkt ist nicht verfügbar
PJD18N20_L2_00001Panjit International Inc.Description: 200V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1017 pF @ 25 V
auf Bestellung 11695 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.5 EUR
14+ 1.3 EUR
100+ 0.9 EUR
500+ 0.75 EUR
1000+ 0.64 EUR
Mindestbestellmenge: 12
PJD18N20_L2_00001PanjitMOSFET 200V N-Channel Enhancement Mode MOSFET
auf Bestellung 7816 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.51 EUR
10+ 1.33 EUR
100+ 0.9 EUR
500+ 0.76 EUR
1000+ 0.66 EUR
3000+ 0.56 EUR
6000+ 0.54 EUR
Mindestbestellmenge: 2
PJD18N20_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 83W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD18N20_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 83W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD18N20_L2_00001Panjit International Inc.Description: 200V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1017 pF @ 25 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.57 EUR
6000+ 0.54 EUR
9000+ 0.5 EUR
Mindestbestellmenge: 3000
PJD1NA50_L2_00001PanjitMOSFET 500V N-Channel MOSFET
Produkt ist nicht verfügbar
PJD1NA60B_L2_00001PanjitMOSFET PJ/D1NA60B/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-600SMN//PJ/TO252-ASA2/PJx1NA60B-AS29/TO252-AS02
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
PJD1NA60_L2_00001PanjitESD Suppressors / TVS Diodes TVS ESD SOD-123S 60V 96.8V
Produkt ist nicht verfügbar
PJD25N03-L2-00001PanjitMOSFET TO-252AA/MOS/TO/NFET-30SMN
Produkt ist nicht verfügbar
PJD25N03_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 25W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
155+ 0.46 EUR
253+ 0.28 EUR
325+ 0.22 EUR
345+ 0.21 EUR
Mindestbestellmenge: 70
PJD25N03_L2_00001PanjitMOSFET 30V N-Channel Enhancement Mode MOSFET
auf Bestellung 2036 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.69 EUR
10+ 0.58 EUR
100+ 0.43 EUR
500+ 0.34 EUR
1000+ 0.27 EUR
3000+ 0.23 EUR
9000+ 0.21 EUR
Mindestbestellmenge: 5
PJD25N03_L2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V
auf Bestellung 6487 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
31+ 0.58 EUR
100+ 0.4 EUR
500+ 0.31 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 27
PJD25N03_L2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.23 EUR
Mindestbestellmenge: 3000
PJD25N03_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 25W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
70+1.03 EUR
155+ 0.46 EUR
253+ 0.28 EUR
325+ 0.22 EUR
345+ 0.21 EUR
6000+ 0.2 EUR
Mindestbestellmenge: 70
PJD25N04-AU_L2_000A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJD25N04-AU_L2_000A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJD25N04-L2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJD25N04V-AU_L2_002A1PanjitMOSFET 40V N-Channel Enhancement Mode MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.43 EUR
10+ 2.01 EUR
100+ 1.61 EUR
250+ 1.49 EUR
500+ 1.35 EUR
1000+ 1.16 EUR
3000+ 1.1 EUR
Mindestbestellmenge: 2
PJD25N04V-AU_L2_002A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD25N04V-AU_L2_002A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD25N04_L2_00001Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
Produkt ist nicht verfügbar
PJD25N04_L2_00001Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
Produkt ist nicht verfügbar
PJD25N04_L2_00001PanjitMOSFET 40V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD25N06A-AU_L2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 2.4W (Ta), 48.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PJD25N06A-AU_L2_000A1PanjitMOSFET 60V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD25N06A-AU_L2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 2.4W (Ta), 48.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 587 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.27 EUR
16+ 1.1 EUR
100+ 0.76 EUR
500+ 0.64 EUR
Mindestbestellmenge: 14
PJD25N06A_L2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
auf Bestellung 1209 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.93 EUR
23+ 0.8 EUR
100+ 0.55 EUR
500+ 0.43 EUR
1000+ 0.35 EUR
Mindestbestellmenge: 19
PJD25N06A_L2_00001PanjitMOSFET 60V N-Channel Enhancement Mode MOSFET
auf Bestellung 68692 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.93 EUR
10+ 0.79 EUR
100+ 0.59 EUR
500+ 0.46 EUR
1000+ 0.37 EUR
3000+ 0.29 EUR
Mindestbestellmenge: 4
PJD25N06A_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2905 Stücke:
Lieferzeit 7-14 Tag (e)
73+0.99 EUR
148+ 0.49 EUR
242+ 0.3 EUR
296+ 0.24 EUR
313+ 0.23 EUR
3000+ 0.22 EUR
Mindestbestellmenge: 73
PJD25N06A_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2905 Stücke:
Lieferzeit 14-21 Tag (e)
73+0.99 EUR
148+ 0.49 EUR
242+ 0.3 EUR
296+ 0.24 EUR
313+ 0.23 EUR
Mindestbestellmenge: 73
PJD25N06A_L2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Produkt ist nicht verfügbar
PJD25N10A_L2_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3601 pF @ 15 V
auf Bestellung 2803 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.2 EUR
17+ 1.05 EUR
100+ 0.72 EUR
500+ 0.61 EUR
1000+ 0.52 EUR
Mindestbestellmenge: 15
PJD25N10A_L2_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3601 pF @ 15 V
Produkt ist nicht verfügbar
PJD25N10A_L2_00001PanjitMOSFET 100V N-Channel Enhancement Mode MOSFET
auf Bestellung 1750 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.21 EUR
10+ 1.07 EUR
100+ 0.73 EUR
500+ 0.61 EUR
1000+ 0.53 EUR
3000+ 0.45 EUR
6000+ 0.43 EUR
Mindestbestellmenge: 3
PJD25P03_L2_00001PanjitMOSFET 30V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD25P03_L2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJD25P03_L2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJD2NA1K_L2_00001PanjitMOSFET PJ/D2NA1K/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-1000SMN//PJ/TO252-AS82/TO252-AS83/TO252-AS02
Produkt ist nicht verfügbar
PJD2NA1K_L2_00001Panjit International Inc.Description: 1000V N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 9Ohm @ 1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Produkt ist nicht verfügbar
PJD2NA60_L2_00001PanjitMOSFET PJ/D2NA60/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-600SMN/NF600-QI29/PJ/TO252-AS26/TO252-AS27/TO252-AS02
Produkt ist nicht verfügbar
PJD2NA60_R2_00001PanjitMOSFET PJ/D2NA60/TR/13"/HF/3K/TO-252AA/MOS/TO/NFET-600SMN/NF600-QI29/PJ/TO252-AS26/TO252-AS27/TO252-AS02
Produkt ist nicht verfügbar
PJD2NA70_L2_00001PanjitMOSFET PJ/D2NA70/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-700SMN/NF700-QI10/PJ/TO252-AS32/TO252-AS33/TO252-AS02
Produkt ist nicht verfügbar
PJD2NA90_L2_00001PanjitMOSFET PJ/D2NA90/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-900SMN//PJ/TO252-AS55/TO252-AS56/TO252-AS02
Produkt ist nicht verfügbar
PJD30N04S-AU_L2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
PJD30N04S-AU_L2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
PJD30N04S-AU_L2_002A1PanjitMOSFET 40V N-Channel Enhancement Mode MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.45 EUR
10+ 1.99 EUR
100+ 1.56 EUR
500+ 1.32 EUR
1000+ 1.08 EUR
3000+ 1.02 EUR
6000+ 0.97 EUR
Mindestbestellmenge: 2
PJD30N15_L2_00001Panjit International Inc.Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
auf Bestellung 2976 Stücke:
Lieferzeit 10-14 Tag (e)
PJD30N15_L2_00001PanjitMOSFET 150V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD30N15_L2_00001Panjit International Inc.Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
Produkt ist nicht verfügbar
PJD342
auf Bestellung 306 Stücke:
Lieferzeit 21-28 Tag (e)
PJD35N06A-AU_L2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Produkt ist nicht verfügbar
PJD35N06A-AU_L2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Produkt ist nicht verfügbar
PJD35N06A-AU_L2_000A1PanjitMOSFET 60V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD35N06A_L2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Produkt ist nicht verfügbar
PJD35N06A_L2_00001PanjitMOSFET 60V N-Channel Enhancement Mode MOSFET
auf Bestellung 2812 Stücke:
Lieferzeit 10-14 Tag (e)
3+1 EUR
10+ 0.85 EUR
100+ 0.63 EUR
500+ 0.5 EUR
1000+ 0.4 EUR
3000+ 0.34 EUR
9000+ 0.3 EUR
Mindestbestellmenge: 3
PJD35N06A_L2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
auf Bestellung 2730 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.11 EUR
19+ 0.95 EUR
100+ 0.71 EUR
500+ 0.56 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 16
PJD35P03_L2_00001PanjitMOSFET 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 2901 Stücke:
Lieferzeit 10-14 Tag (e)
3+0.98 EUR
10+ 0.83 EUR
100+ 0.62 EUR
500+ 0.49 EUR
1000+ 0.39 EUR
3000+ 0.33 EUR
6000+ 0.32 EUR
Mindestbestellmenge: 3
PJD35P03_L2_00001PanJit SemiconductorPJD35P03-L2 SMD P channel transistors
auf Bestellung 2990 Stücke:
Lieferzeit 7-14 Tag (e)
70+1.03 EUR
296+ 0.24 EUR
315+ 0.23 EUR
6000+ 0.22 EUR
Mindestbestellmenge: 70
PJD3NA50_L2_00001PanjitMOSFET 500V N-Channel MOSFET
Produkt ist nicht verfügbar
PJD3NA80_L2_00001PanjitMOSFET 800V N-Channel MOSFET
Produkt ist nicht verfügbar
PJD40N04-AU_L2_000A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJD40N04-AU_L2_000A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
auf Bestellung 2985 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.36 EUR
15+ 1.19 EUR
100+ 0.91 EUR
500+ 0.72 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 13
PJD40N04_L2_00001Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
18+0.99 EUR
21+ 0.84 EUR
100+ 0.63 EUR
500+ 0.49 EUR
1000+ 0.38 EUR
Mindestbestellmenge: 18
PJD40N04_L2_00001Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJD40N04_L2_00001PanjitLED Displays & Accessories 40MM LED AC ADAPTER DISPLAY LI
Produkt ist nicht verfügbar
PJD40N06A-AU_L2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PJD40N06A-AU_L2_000A1PanjitMOSFET 60V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD40N06A-AU_L2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PJD40N06A-L2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJD40N06A_L2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
Produkt ist nicht verfügbar
PJD40N06A_L2_00001PanjitMOSFET 60V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD40N06A_L2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
Produkt ist nicht verfügbar
PJD40N15_L2_00001Panjit International Inc.Description: 150V N-CHANNEL ENHANCEMENT MODE
Produkt ist nicht verfügbar
PJD40N15_L2_00001PanjitMOSFET 150V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD40N15_L2_00001Panjit International Inc.Description: 150V N-CHANNEL ENHANCEMENT MODE
Produkt ist nicht verfügbar
PJD40P03E-AU_L2_006A1PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD40P03E-AU_L2_006A1PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD40P03E-AU_L2_006A1PanjitMOSFET 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.02 EUR
10+ 1.67 EUR
100+ 1.3 EUR
500+ 1.1 EUR
1000+ 0.9 EUR
3000+ 0.84 EUR
6000+ 0.81 EUR
Mindestbestellmenge: 2
PJD45N03-L2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJD45N03_L2_00001PanjitMOSFET 30V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD45N03_L2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Produkt ist nicht verfügbar
PJD45N06A-AU_L2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V
Produkt ist nicht verfügbar
PJD45N06A-AU_L2_000A1PanjitMOSFET 60V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD45N06A-AU_L2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V
Produkt ist nicht verfügbar
PJD45N06A_L2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V
Produkt ist nicht verfügbar
PJD45N06A_L2_00001PanjitMOSFET 60V N-Channel Enhancement Mode MOSFET
auf Bestellung 13666 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.18 EUR
10+ 1.03 EUR
100+ 0.7 EUR
500+ 0.59 EUR
1000+ 0.51 EUR
3000+ 0.43 EUR
6000+ 0.42 EUR
Mindestbestellmenge: 3
PJD45N06A_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 63W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
148+ 0.48 EUR
164+ 0.44 EUR
212+ 0.34 EUR
225+ 0.32 EUR
Mindestbestellmenge: 69
PJD45N06A_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 63W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
69+1.04 EUR
148+ 0.48 EUR
164+ 0.44 EUR
212+ 0.34 EUR
225+ 0.32 EUR
6000+ 0.31 EUR
Mindestbestellmenge: 69
PJD45N06A_L2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V
auf Bestellung 1351 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.2 EUR
18+ 1.03 EUR
100+ 0.72 EUR
500+ 0.6 EUR
1000+ 0.51 EUR
Mindestbestellmenge: 15
PJD45P03E-AU_L2_006A1PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD45P03E-AU_L2_006A1PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD45P03E-AU_L2_006A1PanjitMOSFET 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 2998 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.15 EUR
10+ 2.62 EUR
100+ 2.09 EUR
250+ 1.94 EUR
500+ 1.75 EUR
1000+ 1.5 EUR
3000+ 1.43 EUR
PJD45P04_L2_00001Panjit International Inc.Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Produkt ist nicht verfügbar
PJD45P04_L2_00001PanjitMOSFET 40V P-Channel Enhancement Mode MOSFET
auf Bestellung 2618 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.37 EUR
10+ 1.22 EUR
100+ 0.93 EUR
500+ 0.74 EUR
1000+ 0.61 EUR
3000+ 0.52 EUR
9000+ 0.48 EUR
Mindestbestellmenge: 3
PJD45P04_L2_00001PanJit SemiconductorPJD45P04-L2 SMD P channel transistors
Produkt ist nicht verfügbar
PJD45P04_L2_00001Panjit International Inc.Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
auf Bestellung 2689 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.48 EUR
14+ 1.29 EUR
100+ 0.99 EUR
500+ 0.78 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 12
PJD4NA65H_L2_00001PanjitMOSFET PJ/D4NA65H/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-650SMN//PJ/TO252-AS53/TO252-AS54/TO252-AS02
Produkt ist nicht verfügbar
PJD4NA70_L2_00001PanjitMOSFET PJ/D4NA70/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-700SMN//PJ/TO252-AS34/TO252-AS35/TO252-AS02
Produkt ist nicht verfügbar
PJD4NA90_L2_00001Panjit International Inc.Description: 900V N-CHANNEL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
Produkt ist nicht verfügbar
PJD4NA90_L2_00001PanjitMOSFET 900V N-Channel MOSFET
Produkt ist nicht verfügbar
PJD4NA90_L2_00001Panjit International Inc.Description: 900V N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
Produkt ist nicht verfügbar
PJD50N04-AU_L2_000A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 64.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2653 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.5 EUR
14+ 1.29 EUR
100+ 0.9 EUR
500+ 0.75 EUR
1000+ 0.64 EUR
Mindestbestellmenge: 12
PJD50N04-AU_L2_000A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 64.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PJD50N04-AU_L2_000A1PanjitMOSFET 40V N-Channel Enhancement Mode MOSFET
auf Bestellung 2978 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.51 EUR
10+ 1.32 EUR
100+ 0.9 EUR
500+ 0.76 EUR
1000+ 0.66 EUR
3000+ 0.56 EUR
6000+ 0.54 EUR
Mindestbestellmenge: 2
PJD50N04V-AU_L2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.66 EUR
10+ 2.21 EUR
100+ 1.76 EUR
500+ 1.49 EUR
1000+ 1.26 EUR
Mindestbestellmenge: 7
PJD50N04V-AU_L2_002A1PanjitMOSFET 40V N-Channel Enhancement Mode MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.68 EUR
10+ 2.22 EUR
100+ 1.76 EUR
250+ 1.62 EUR
500+ 1.49 EUR
1000+ 1.27 EUR
3000+ 1.21 EUR
Mindestbestellmenge: 2
PJD50N04V-AU_L2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.2 EUR
Mindestbestellmenge: 3000
PJD50N04_L2_00001PanjitMOSFET 40V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD50N04_L2_00001Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
auf Bestellung 1950 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.06 EUR
20+ 0.91 EUR
100+ 0.63 EUR
500+ 0.49 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 17
PJD50N04_L2_00001Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Produkt ist nicht verfügbar
PJD50N10AL-AU_L2_000A1Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PJD50N10AL-AU_L2_000A1PanjitMOSFET 100V N-Channel Enhancement Mode MOSFET
auf Bestellung 2723 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.59 EUR
10+ 1.3 EUR
100+ 1.01 EUR
500+ 0.86 EUR
1000+ 0.73 EUR
3000+ 0.62 EUR
Mindestbestellmenge: 2
PJD50N10AL-AU_L2_000A1Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 1297 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.6 EUR
14+ 1.31 EUR
100+ 1.02 EUR
500+ 0.86 EUR
1000+ 0.7 EUR
Mindestbestellmenge: 11
PJD50N10AL_L2_00001PanjitMOSFET 100V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD50N10AL_L2_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 30 V
Produkt ist nicht verfügbar
PJD50N10AL_L2_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 30 V
auf Bestellung 2946 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.5 EUR
14+ 1.3 EUR
100+ 0.9 EUR
500+ 0.75 EUR
1000+ 0.64 EUR
Mindestbestellmenge: 12
PJD50P04-AU_L2_000A1Panjit International Inc.Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V
auf Bestellung 2750 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.78 EUR
13+ 1.45 EUR
100+ 1.13 EUR
500+ 0.96 EUR
1000+ 0.78 EUR
Mindestbestellmenge: 10
PJD50P04-AU_L2_000A1Panjit International Inc.Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V
Produkt ist nicht verfügbar
PJD50P04-AU_L2_000A1PanjitMOSFET 40V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD50P04_L2_00001Panjit International Inc.Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V
auf Bestellung 5861 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.36 EUR
15+ 1.18 EUR
100+ 0.82 EUR
500+ 0.68 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 13
PJD50P04_L2_00001PanjitMOSFET 40V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD50P04_L2_00001Panjit International Inc.Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V
Produkt ist nicht verfügbar
PJD55N03-L2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJD55N03_L2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 2W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V
Produkt ist nicht verfügbar
PJD55N03_L2_00001PanjitMOSFET 30V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD55N03_L2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 2W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V
Produkt ist nicht verfügbar
PJD55N04S-AUPanjitPanjit N CHAN 40V TO-252AA-2
Produkt ist nicht verfügbar
PJD55N04S-AU_L2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PJD55N04S-AU_L2_002A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD55N04S-AU_L2_002A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD55N04S-AU_L2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PJD55N04S-AU_L2_002A1PanjitMOSFET 40V N-Channel Enhancement Mode MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.43 EUR
10+ 2.01 EUR
100+ 1.61 EUR
250+ 1.49 EUR
500+ 1.35 EUR
1000+ 1.16 EUR
3000+ 1.1 EUR
Mindestbestellmenge: 2
PJD55N04V-AU_L2_002A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD55N04V-AU_L2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PJD55N04V-AU_L2_002A1PanjitMOSFET 40V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD55N04V-AU_L2_002A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD55N04V-AU_L2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PJD55P03E-AU_L2_006A1PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD55P03E-AU_L2_006A1PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD55P03E-AU_L2_006A1PanjitMOSFET 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.27 EUR
10+ 2.73 EUR
100+ 2.16 EUR
250+ 1.99 EUR
500+ 1.81 EUR
1000+ 1.56 EUR
3000+ 1.48 EUR
PJD5NA50_L2_00001Panjit International Inc.Description: 500V N-CHANNEL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 2.5A, 10V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 25 V
Produkt ist nicht verfügbar
PJD5NA50_L2_00001Panjit International Inc.Description: 500V N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 2.5A, 10V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 25 V
Produkt ist nicht verfügbar
PJD5NA50_L2_00001PanjitMOSFET 500V N-Channel MOSFET
Produkt ist nicht verfügbar
PJD5NA80_L2_00001PanjitMOSFET 800V N-Channel MOSFET
Produkt ist nicht verfügbar
PJD5NA80_L2_00001Panjit International Inc.Description: 800V N-CHANNEL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Produkt ist nicht verfügbar
PJD5NA80_L2_00001Panjit International Inc.Description: 800V N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Produkt ist nicht verfügbar
PJD60N04-AU-L2-000A1PanjitMOSFET
Produkt ist nicht verfügbar
PJD60N04-AU_L2_000A1PanjitMOSFET 40V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD60N04-AU_L2_000A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PJD60N04-AU_L2_000A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PJD60N04S-AU_L2_002A1PanjitMOSFET 40V N-Channel Enhancement Mode MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.77 EUR
10+ 3.13 EUR
100+ 2.48 EUR
250+ 2.29 EUR
500+ 2.08 EUR
1000+ 1.78 EUR
3000+ 1.7 EUR
PJD60N04_L2_00001Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V
Produkt ist nicht verfügbar
PJD60N04_L2_00001PanjitMOSFET 40V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD60N04_L2_00001Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V
Produkt ist nicht verfügbar
PJD60N06-L2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJD60N06A-L2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJD60N08-L2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJD60P04E-AU_L2_006A1Panjit International Inc.Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V
Produkt ist nicht verfügbar
PJD60P04E-AU_L2_006A1PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD60P04E-AU_L2_006A1Panjit International Inc.Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V
Produkt ist nicht verfügbar
PJD60P04E-AU_L2_006A1PanjitMOSFET 40V P-Channel Enhancement Mode MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.39 EUR
10+ 1.97 EUR
100+ 1.53 EUR
500+ 1.3 EUR
1000+ 1.06 EUR
3000+ 1 EUR
6000+ 0.95 EUR
Mindestbestellmenge: 2
PJD60P04E-AU_L2_006A1PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD60R390E_L2_00001Panjit International Inc.Description: 600V N-CHANNEL SUPER JUNCTION MO
Produkt ist nicht verfügbar
PJD60R390E_L2_00001Panjit International Inc.Description: 600V N-CHANNEL SUPER JUNCTION MO
Produkt ist nicht verfügbar
PJD60R390E_L2_00001PanjitMOSFET 600V N-Channel Super Junction MOSFET
Produkt ist nicht verfügbar
PJD60R540E_L2_00001PanjitMOSFET 600V N-Channel Super Junction MOSFET
Produkt ist nicht verfügbar
PJD60R620E_L2_00001Panjit International Inc.Description: 600V N-CHANNEL SUPER JUNCTION MO
Produkt ist nicht verfügbar
PJD60R620E_L2_00001Panjit International Inc.Description: 600V N-CHANNEL SUPER JUNCTION MO
Produkt ist nicht verfügbar
PJD60R620E_L2_00001PanjitMOSFET 600V N-Channel Super Junction MOSFET
Produkt ist nicht verfügbar
PJD60R980E_L2_00001PanjitMOSFET 600V N-Channel Super Junction MOSFET
Produkt ist nicht verfügbar
PJD6NA40_L2_00001PanjitMOSFET 400V N-Channel MOSFET
Produkt ist nicht verfügbar
PJD6NA40_R2_00001PanjitMOSFET 400V N-Channel MOSFET
Produkt ist nicht verfügbar
PJD70N06-L2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJD70N10-L2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJD70P03E-AU_L2_006A1PanjitMOSFET 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 2865 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.27 EUR
10+ 1.87 EUR
100+ 1.46 EUR
500+ 1.23 EUR
1000+ 1.01 EUR
3000+ 0.95 EUR
6000+ 0.9 EUR
Mindestbestellmenge: 2
PJD70P03E-AU_L2_006A1PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD70P03E-AU_L2_006A1PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD70P03_L2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V
auf Bestellung 766 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.09 EUR
19+ 0.95 EUR
100+ 0.66 EUR
500+ 0.55 EUR
Mindestbestellmenge: 17
PJD70P03_L2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V
Produkt ist nicht verfügbar
PJD75P04E-AU_L2_006A1PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD75P04E-AU_L2_006A1PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD75P04E-AU_L2_006A1PanjitMOSFET 40V P-Channel Enhancement Mode MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.06 EUR
10+ 2.53 EUR
100+ 2.02 EUR
250+ 1.87 EUR
500+ 1.69 EUR
1000+ 1.46 EUR
3000+ 1.39 EUR
PJD7NA65_L2_00001PanjitMOSFET PJ/D7NA65/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-650SMN/NF650-QI13/PJ/TO252-AS06/TO252-AS07/TO252-AS02
Produkt ist nicht verfügbar
PJD7NA65_R2_00001PanjitMOSFET PJ/D7NA65/TR/13"/HF/3K/TO-252AA/MOS/TO/NFET-650SMN/NF650-QI13/PJ/TO252-AS06/TO252-AS07/TO252-AS02
Produkt ist nicht verfügbar
PJD80N03-L2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJD80N03_L2_00001PanjitMOSFET 30V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD80N03_L2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V
Produkt ist nicht verfügbar
PJD80N03_L2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V
Produkt ist nicht verfügbar
PJD80N04-AU-L2-000A1PanjitMOSFET TO-252AA/MOS/TO/NFET-40SMN
Produkt ist nicht verfügbar
PJD80N04-AU_L2_000A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 79.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.77 EUR
Mindestbestellmenge: 3000
PJD80N04-AU_L2_000A1PanjitMOSFET 40V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD80N04-AU_L2_000A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 79.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.87 EUR
12+ 1.53 EUR
100+ 1.19 EUR
500+ 1.01 EUR
1000+ 0.82 EUR
Mindestbestellmenge: 10
PJD80N04-L2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJD80N04S-AU_L2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4973 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PJD80N04S-AU_L2_002A1PanjitMOSFET 40V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD80N04S-AU_L2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4973 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PJD80N04_L2_00001Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
auf Bestellung 1327 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.16 EUR
18+ 1 EUR
100+ 0.7 EUR
500+ 0.58 EUR
1000+ 0.49 EUR
Mindestbestellmenge: 16
PJD80N04_L2_00001PanjitMOSFET 40V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD80N04_L2_00001Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Produkt ist nicht verfügbar
PJD80N06-L2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJD85N03-AU-L2-000A1PanjitMOSFET
Produkt ist nicht verfügbar
PJD85N03-AU_L2_000A1Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 58W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PJD85N03-AU_L2_000A1Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 58W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PJD85N03-AU_L2_000A1PanjitMOSFET 30V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD85N03-L2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJD85N03_L2_00001PanjitMOSFET 30V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD85N03_L2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 58W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V
Produkt ist nicht verfügbar
PJD85N03_L2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 58W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V
Produkt ist nicht verfügbar
PJD882
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
PJD8NA50_L2_00001PanjitMOSFET 500V N-Channel MOSFET
Produkt ist nicht verfügbar
PJD8NA50_R2_00001PanjitMOSFET 500V N-Channel MOSFET
Produkt ist nicht verfügbar
PJD8NA65A_L2_00001PanjitMOSFET PJ/D8NA65A/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-650SMN//PJ/TO252-AS96/PJx8NA65A-AS20/TO252-AS02
Produkt ist nicht verfügbar
PJD90N03-L2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJD90N03_L2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
Produkt ist nicht verfügbar
PJD90N03_L2_00001PanjitMOSFET 30V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD90N03_L2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
auf Bestellung 2983 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.94 EUR
12+ 1.57 EUR
100+ 1.22 EUR
500+ 1.04 EUR
1000+ 0.84 EUR
Mindestbestellmenge: 10
PJD90P03E-AU_L2_006A1PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD90P03E-AU_L2_006A1PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD90P03E-AU_L2_006A1PanjitMOSFET 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.36 EUR
10+ 3.66 EUR
25+ 3.47 EUR
100+ 2.96 EUR
250+ 2.8 EUR
500+ 2.64 EUR
1000+ 2.25 EUR
PJD95P04E-AU_L2_006A1PanjitMOSFET 40V P-Channel Enhancement Mode MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1+2.92 EUR
10+ 2.45 EUR
100+ 1.95 EUR
250+ 1.8 EUR
500+ 1.62 EUR
1000+ 1.47 EUR
3000+ 1.25 EUR
PJD9N10A_L2_00001Panjit International Inc.Description: 100V N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 9A (Tc)
Rds On (Max) @ Id, Vgs: 152mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1021 pF @ 25 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.29 EUR
6000+ 0.28 EUR
9000+ 0.26 EUR
Mindestbestellmenge: 3000
PJD9N10A_L2_00001PanjitMOSFET 100V N-Channel MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.87 EUR
10+ 0.75 EUR
100+ 0.56 EUR
500+ 0.44 EUR
1000+ 0.35 EUR
3000+ 0.3 EUR
9000+ 0.27 EUR
Mindestbestellmenge: 4
PJD9N10A_L2_00001Panjit International Inc.Description: 100V N-CHANNEL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 9A (Tc)
Rds On (Max) @ Id, Vgs: 152mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1021 pF @ 25 V
auf Bestellung 11566 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.86 EUR
24+ 0.74 EUR
100+ 0.51 EUR
500+ 0.4 EUR
1000+ 0.33 EUR
Mindestbestellmenge: 21
PJD9P06A-AU_L2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.5A, 10V
Power Dissipation (Max): 2W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V
auf Bestellung 2616 Stücke:
Lieferzeit 10-14 Tag (e)
18+0.99 EUR
21+ 0.87 EUR
100+ 0.66 EUR
500+ 0.53 EUR
1000+ 0.42 EUR
Mindestbestellmenge: 18
PJD9P06A-AU_L2_000A1PanjitMOSFET 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.03 EUR
10+ 0.91 EUR
100+ 0.7 EUR
500+ 0.55 EUR
1000+ 0.44 EUR
3000+ 0.4 EUR
6000+ 0.39 EUR
Mindestbestellmenge: 3
PJD9P06A-AU_L2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.5A, 10V
Power Dissipation (Max): 2W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V
Produkt ist nicht verfügbar
PJD9P06A-L2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJD9P06A_L2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.5A, 10V
Power Dissipation (Max): 2W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V
auf Bestellung 1032 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.43 EUR
15+ 1.18 EUR
100+ 0.91 EUR
500+ 0.78 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 13
PJD9P06A_L2_00001PanjitMOSFET 60V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJD9P06A_L2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.5A, 10V
Power Dissipation (Max): 2W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V
Produkt ist nicht verfügbar
PJDLC05PanjitSOT23 10+
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
PJDLC05Panjit09+ QFP
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
PJDLC05C-02-R1-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJDLC05C-02TB
auf Bestellung 63000 Stücke:
Lieferzeit 21-28 Tag (e)
PJDLC05C-03-R1-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJDLC05C-05-R1-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJDLC05T/R
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
PJDLC05T/R/T2SPANJITSOT-23 09+
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
PJDLC05_R1_00001PanJit SemiconductorPJDLC05-R1 Transil diodes - arrays
Produkt ist nicht verfügbar
PJDLC12PANJITSOT23
auf Bestellung 5600 Stücke:
Lieferzeit 21-28 Tag (e)
PJDLC15
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
PJDLC24
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
PJDLLLC70
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)