Produkte > PANJIT > PJD16P06A_L2_00001
PJD16P06A_L2_00001

PJD16P06A_L2_00001 Panjit

PJD16P06A-1867568.pdf Hersteller: Panjit
MOSFET 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 17328 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+0.97 EUR
10+ 0.84 EUR
100+ 0.58 EUR
500+ 0.48 EUR
1000+ 0.42 EUR
3000+ 0.36 EUR
6000+ 0.34 EUR
Mindestbestellmenge: 3
Produktrezensionen
Produktbewertung abgeben

Technische Details PJD16P06A_L2_00001 Panjit

Description: 60V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc), Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V, Power Dissipation (Max): 2W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V.

Weitere Produktangebote PJD16P06A_L2_00001 nach Preis ab 0.32 EUR bis 0.76 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PJD16P06A_L2_00001 Hersteller : PanJit Semiconductor PJD16P06A.pdf PJD16P06A-L2 SMD P channel transistors
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
95+0.76 EUR
200+ 0.36 EUR
212+ 0.34 EUR
12000+ 0.32 EUR
Mindestbestellmenge: 95
PJD16P06A_L2_00001 PJD16P06A_L2_00001 Hersteller : Panjit International Inc. PJD16P06A.pdf Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V
Produkt ist nicht verfügbar
PJD16P06A_L2_00001 PJD16P06A_L2_00001 Hersteller : Panjit International Inc. PJD16P06A.pdf Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V
Produkt ist nicht verfügbar
PJD16P06A-L2-00001 PJD16P06A-L2-00001 Hersteller : Panjit PJD16P06A-1867568.pdf MOSFET
Produkt ist nicht verfügbar