Produkte > RQ1

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
RQ147M2R2BATME
auf Bestellung 72000 Stücke:
Lieferzeit 21-28 Tag (e)
RQ1A060ZPTR
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RQ1A060ZPTRROHM SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6A; Idm: -24A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6A
Pulsed drain current: -24A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
RQ1A060ZPTRRohm SemiconductorDescription: MOSFET P-CH 12V 6A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 6 V
auf Bestellung 35921 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.53 EUR
13+ 1.36 EUR
100+ 1.04 EUR
500+ 0.82 EUR
1000+ 0.66 EUR
Mindestbestellmenge: 12
RQ1A060ZPTRROHM SemiconductorMOSFET RECOMMENDED ALT 755-RF4C050APTR
auf Bestellung 3564 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.51 EUR
10+ 1.31 EUR
100+ 0.91 EUR
500+ 0.76 EUR
1000+ 0.64 EUR
3000+ 0.52 EUR
Mindestbestellmenge: 2
RQ1A060ZPTRROHM SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6A; Idm: -24A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6A
Pulsed drain current: -24A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RQ1A060ZPTRRohm SemiconductorDescription: MOSFET P-CH 12V 6A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 6 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.6 EUR
6000+ 0.56 EUR
15000+ 0.53 EUR
30000+ 0.51 EUR
Mindestbestellmenge: 3000
RQ1A070APTRROHM SemiconductorMOSFET Trans MOSFET P-CH 12V 7A
auf Bestellung 3681 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.36 EUR
10+ 1.18 EUR
100+ 0.81 EUR
500+ 0.68 EUR
1000+ 0.58 EUR
3000+ 0.49 EUR
Mindestbestellmenge: 3
RQ1A070APTRROHM SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7A; Idm: -28A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.5W
Case: TSMT8
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RQ1A070APTRRohm SemiconductorDescription: MOSFET P-CH 12V 7A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 4.5V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 6 V
auf Bestellung 3473 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.37 EUR
15+ 1.18 EUR
100+ 0.82 EUR
500+ 0.69 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 13
RQ1A070APTRROHM SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7A; Idm: -28A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.5W
Case: TSMT8
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
RQ1A070APTRRohm SemiconductorDescription: MOSFET P-CH 12V 7A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 4.5V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 6 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.52 EUR
Mindestbestellmenge: 3000
RQ1A070ZPFRATRROHM SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7A; Idm: -28A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
RQ1A070ZPFRATRROHM SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7A; Idm: -28A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RQ1A070ZPHZGTRRohm SemiconductorDescription: AUTOMOTIVE PCH -12V -7A SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V
Produkt ist nicht verfügbar
RQ1A070ZPHZGTRROHM SemiconductorMOSFET MOSFET 12V PCH -7A
auf Bestellung 5933 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.67 EUR
10+ 1.38 EUR
100+ 1.07 EUR
500+ 1.03 EUR
3000+ 0.88 EUR
6000+ 0.86 EUR
9000+ 0.84 EUR
Mindestbestellmenge: 2
RQ1A070ZPHZGTRRohm SemiconductorDescription: AUTOMOTIVE PCH -12V -7A SMALL SI
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V
Produkt ist nicht verfügbar
RQ1A070ZPTRROHM SemiconductorMOSFET SW MOSFET MID PWR P-CH 12V -7A
auf Bestellung 407 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.92 EUR
10+ 1.57 EUR
100+ 1.22 EUR
500+ 1.03 EUR
1000+ 0.84 EUR
3000+ 0.79 EUR
6000+ 0.75 EUR
Mindestbestellmenge: 2
RQ1A070ZPTRRohm SemiconductorDescription: MOSFET P-CH 12V 7A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.81 EUR
Mindestbestellmenge: 3000
RQ1A070ZPTR
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RQ1A070ZPTRRohm SemiconductorDescription: MOSFET P-CH 12V 7A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V
auf Bestellung 5267 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.95 EUR
12+ 1.6 EUR
100+ 1.24 EUR
500+ 1.05 EUR
1000+ 0.86 EUR
Mindestbestellmenge: 10
RQ1C065UNTR
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RQ1C065UNTRRohm SemiconductorDescription: MOSFET N-CH 20V 6.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
Produkt ist nicht verfügbar
RQ1C065UNTRRohm SemiconductorTrans MOSFET N-CH 20V 6.5A 8-Pin TSMT T/R
auf Bestellung 801 Stücke:
Lieferzeit 14-21 Tag (e)
226+0.69 EUR
250+ 0.64 EUR
500+ 0.6 EUR
Mindestbestellmenge: 226
RQ1C065UNTRRohm SemiconductorDescription: MOSFET N-CH 20V 6.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
auf Bestellung 2955 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.09 EUR
19+ 0.93 EUR
100+ 0.69 EUR
500+ 0.55 EUR
1000+ 0.42 EUR
Mindestbestellmenge: 17
RQ1C065UNTRRohm SemiconductorTrans MOSFET N-CH 20V 6.5A 8-Pin TSMT T/R
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
226+0.69 EUR
250+ 0.64 EUR
500+ 0.6 EUR
1000+ 0.55 EUR
2500+ 0.52 EUR
Mindestbestellmenge: 226
RQ1C065UNTRROHM SemiconductorMOSFET 1.5V Drive Nch MOSFET
auf Bestellung 2406 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.06 EUR
10+ 0.91 EUR
100+ 0.68 EUR
500+ 0.54 EUR
1000+ 0.41 EUR
3000+ 0.35 EUR
9000+ 0.33 EUR
Mindestbestellmenge: 3
RQ1C075UNTRROHM SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 30A; 1.5W; TSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 30A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
RQ1C075UNTRROHM SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 30A; 1.5W; TSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 30A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RQ1C075UNTRRohm SemiconductorDescription: MOSFET N-CH 20V 7.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V
Produkt ist nicht verfügbar
RQ1C075UNTRRohm SemiconductorTrans MOSFET N-CH 20V 7.5A 8-Pin TSMT T/R
auf Bestellung 1925 Stücke:
Lieferzeit 14-21 Tag (e)
213+0.73 EUR
250+ 0.68 EUR
500+ 0.63 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 213
RQ1C075UNTRROHM SemiconductorMOSFET 1.5V Drive Nch MOSFET
auf Bestellung 2081 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.13 EUR
10+ 1 EUR
100+ 0.68 EUR
500+ 0.57 EUR
1000+ 0.49 EUR
3000+ 0.44 EUR
6000+ 0.41 EUR
Mindestbestellmenge: 3
RQ1C075UNTR
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RQ1C075UNTRRohm SemiconductorDescription: MOSFET N-CH 20V 7.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V
Produkt ist nicht verfügbar
RQ1C075UNTRRohm SemiconductorTrans MOSFET N-CH 20V 7.5A 8-Pin TSMT T/R
auf Bestellung 4471 Stücke:
Lieferzeit 14-21 Tag (e)
265+0.59 EUR
290+ 0.52 EUR
299+ 0.49 EUR
500+ 0.45 EUR
1000+ 0.42 EUR
3000+ 0.38 EUR
Mindestbestellmenge: 265
RQ1E050RPFRATRRohm SemiconductorDescription: PCH -30V -5A SMALL SIGNAL MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RQ1E050RPFRATRRohm SemiconductorDescription: PCH -30V -5A SMALL SIGNAL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RQ1E050RPHZGTRROHM SemiconductorMOSFET Pch -30V -5A Small Signal MOSFET: RQ1E050RPHZG is a MOSFET for switching applications. This is a high-reliability product of automotive grade qualified to AEC-Q101.
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.16 EUR
10+ 1.04 EUR
100+ 0.71 EUR
500+ 0.59 EUR
1000+ 0.5 EUR
3000+ 0.46 EUR
6000+ 0.42 EUR
Mindestbestellmenge: 3
RQ1E050RPTRRohm SemiconductorDescription: MOSFET P-CH 30V 5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Produkt ist nicht verfügbar
RQ1E050RPTRROHMDescription: ROHM - RQ1E050RPTR - Leistungs-MOSFET, p-Kanal, 30 V, 5 A, 0.022 ohm, TSMT, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 1.5W
Bauform - Transistor: TSMT
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.022ohm
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 1563 Stücke:
Lieferzeit 14-21 Tag (e)
RQ1E050RPTRROHMDescription: ROHM - RQ1E050RPTR - Leistungs-MOSFET, p-Kanal, 30 V, 5 A, 0.022 ohm, TSMT, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 1.5W
Bauform - Transistor: TSMT
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.022ohm
auf Bestellung 1459 Stücke:
Lieferzeit 14-21 Tag (e)
RQ1E050RPTRROHM SemiconductorMOSFET RECOMMENDED ALT 755-RF4E075ATTCR
auf Bestellung 3310 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.36 EUR
10+ 1.16 EUR
100+ 0.9 EUR
500+ 0.76 EUR
1000+ 0.61 EUR
3000+ 0.59 EUR
6000+ 0.55 EUR
Mindestbestellmenge: 3
RQ1E050RPTRRohm SemiconductorDescription: MOSFET P-CH 30V 5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
auf Bestellung 1731 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.39 EUR
15+ 1.24 EUR
100+ 0.97 EUR
500+ 0.8 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 13
RQ1E070RPHZGTRROHM SemiconductorMOSFET MOSFET 30V PCH -7A
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.65 EUR
10+ 1.36 EUR
100+ 1.06 EUR
500+ 0.9 EUR
1000+ 0.73 EUR
3000+ 0.69 EUR
6000+ 0.65 EUR
Mindestbestellmenge: 2
RQ1E070RPHZGTRRohm SemiconductorDescription: PCH -30V -7A SMALL SIGNAL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
Produkt ist nicht verfügbar
RQ1E070RPHZGTRRohm SemiconductorDescription: PCH -30V -7A SMALL SIGNAL MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
Produkt ist nicht verfügbar
RQ1E070RPTRRohm SemiconductorDescription: MOSFET P-CH 30V 7A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
auf Bestellung 7987 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.02 EUR
10+ 1.8 EUR
100+ 1.4 EUR
500+ 1.16 EUR
1000+ 0.92 EUR
Mindestbestellmenge: 9
RQ1E070RPTRROHM SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -28A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RQ1E070RPTRRohm SemiconductorDescription: MOSFET P-CH 30V 7A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.85 EUR
Mindestbestellmenge: 3000
RQ1E070RPTRROHM SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -28A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
RQ1E070RPTRROHM SemiconductorMOSFET MID PWR MOSFET SER
auf Bestellung 6245 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.99 EUR
10+ 1.65 EUR
100+ 1.26 EUR
500+ 1.06 EUR
1000+ 0.87 EUR
3000+ 0.82 EUR
6000+ 0.78 EUR
Mindestbestellmenge: 2
RQ1E070RPTR
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RQ1E075VN TRROHMTSMT8
auf Bestellung 2723 Stücke:
Lieferzeit 21-28 Tag (e)
RQ1E075XNTCRRohm SemiconductorDescription: MOSFET N-CH 30V 7.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.51 EUR
6000+ 0.48 EUR
9000+ 0.45 EUR
Mindestbestellmenge: 3000
RQ1E075XNTCRROHM SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 30A; 1.5W; TSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Pulsed drain current: 30A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
RQ1E075XNTCRROHM SemiconductorMOSFET 4V Drive Nch MOSFET. MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the
auf Bestellung 12048 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.33 EUR
10+ 1.15 EUR
100+ 0.8 EUR
500+ 0.67 EUR
1000+ 0.57 EUR
3000+ 0.49 EUR
6000+ 0.48 EUR
Mindestbestellmenge: 3
RQ1E075XNTCRROHM SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 30A; 1.5W; TSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Pulsed drain current: 30A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RQ1E075XNTCRRohm SemiconductorDescription: MOSFET N-CH 30V 7.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
auf Bestellung 26858 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.34 EUR
16+ 1.16 EUR
100+ 0.8 EUR
500+ 0.67 EUR
1000+ 0.57 EUR
Mindestbestellmenge: 14
RQ1E100XNTRRohm SemiconductorDescription: MOSFET N-CH 30V 10A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Produkt ist nicht verfügbar
RQ1E100XNTRROHM SemiconductorMOSFET RECOMMENDED ALT 755-RF4E110BNTR
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.7 EUR
10+ 1.39 EUR
100+ 1.08 EUR
500+ 0.92 EUR
1000+ 0.75 EUR
3000+ 0.7 EUR
6000+ 0.67 EUR
Mindestbestellmenge: 2
RQ1R50SHARP0222+
auf Bestellung 18373 Stücke:
Lieferzeit 21-28 Tag (e)
RQ1V-CH-A115IDECGeneral Purpose Relays Relay PCB SPDT 16A 120VAC
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.55 EUR
10+ 17.37 EUR
25+ 15.45 EUR
100+ 13.9 EUR
250+ 12.36 EUR
500+ 11.58 EUR
1000+ 10.81 EUR
RQ1V-CM-D24IDECDescription: IDEC - RQ1V-CM-D24 - POWER RELAY, SPDT, 24VDC, 12A, PC BOARD
tariffCode: 85364190
rohsCompliant: YES
Relaisanschlüsse: Solder
hazardous: false
rohsPhthalatesCompliant: YES
Spulentyp: Non Latching
Kontaktmaterial: Silver Nickel
Kontaktstrom: 12A
usEccn: EAR99
Spulenwiderstand: 1.44kohm
euEccn: NLR
Kontaktspannung V DC: -
Relaismontage: Through Hole
Produktpalette: RQ Series
productTraceability: No
Spulenspannung: 24VDC
Kontaktkonfiguration: SPDT
Kontaktspannung V AC: -
directShipCharge: 25
SVHC: No SVHC (16-Jul-2019)
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)