Produkte > ROHM SEMICONDUCTOR > RQ1A070ZPHZGTR
RQ1A070ZPHZGTR

RQ1A070ZPHZGTR ROHM Semiconductor

Hersteller: ROHM Semiconductor
MOSFET MOSFET 12V PCH -7A
auf Bestellung 5933 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.67 EUR
10+ 1.38 EUR
100+ 1.07 EUR
500+ 1.03 EUR
3000+ 0.88 EUR
6000+ 0.86 EUR
9000+ 0.84 EUR
Mindestbestellmenge: 2
Produktrezensionen
Produktbewertung abgeben

Technische Details RQ1A070ZPHZGTR ROHM Semiconductor

Description: AUTOMOTIVE PCH -12V -7A SMALL SI, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: TSMT8, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V.

Weitere Produktangebote RQ1A070ZPHZGTR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RQ1A070ZPHZGTR RQ1A070ZPHZGTR Hersteller : Rohm Semiconductor Description: AUTOMOTIVE PCH -12V -7A SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V
Produkt ist nicht verfügbar
RQ1A070ZPHZGTR RQ1A070ZPHZGTR Hersteller : Rohm Semiconductor Description: AUTOMOTIVE PCH -12V -7A SMALL SI
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V
Produkt ist nicht verfügbar