Produkte > SID
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||
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| SID | auf Bestellung 100000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID-0515WD | module | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| SID-303C | auf Bestellung 150 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID-5426 | auf Bestellung 2786 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID-UV1Z | BERNSTEIN AG | Category: Line Operated Safety Switches Description: Safety switch: singlesided rope switch; NC + NO; SID; -30÷80°C Manufacturer series: SID IP rating: IP65 Body material: aluminium Contacts configuration: NC + NO Type of safety switch: singlesided rope switch Contacts electrical parameters: 240V AC / 3A Operating temperature: -30...80°C Electrical connection: M20 x2 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| SID-UV1Z | BERNSTEIN AG | Category: Line Operated Safety Switches Description: Safety switch: singlesided rope switch; NC + NO; SID; -30÷80°C Manufacturer series: SID IP rating: IP65 Body material: aluminium Contacts configuration: NC + NO Type of safety switch: singlesided rope switch Contacts electrical parameters: 240V AC / 3A Operating temperature: -30...80°C Electrical connection: M20 x2 | Produkt ist nicht verfügbar | |||||||||||||||||
| SID-UV1Z P-RAST | BERNSTEIN AG | Category: Line Operated Safety Switches Description: Safety switch: singlesided rope switch; NC + NO; SID; -30÷80°C Manufacturer series: SID Type of safety switch: singlesided rope switch Contacts electrical parameters: 240V AC / 3A Operating temperature: -30...80°C Electrical connection: M20 x2 IP rating: IP65 Body material: aluminium Contacts configuration: NC + NO | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| SID-UV1Z P-RAST | BERNSTEIN AG | Category: Line Operated Safety Switches Description: Safety switch: singlesided rope switch; NC + NO; SID; -30÷80°C Manufacturer series: SID Type of safety switch: singlesided rope switch Contacts electrical parameters: 240V AC / 3A Operating temperature: -30...80°C Electrical connection: M20 x2 IP rating: IP65 Body material: aluminium Contacts configuration: NC + NO Anzahl je Verpackung: 1 Stücke | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| SID-UV1Z P-RAST | BERNSTEIN AG | Category: Line Operated Safety Switches Description: Safety switch: singlesided rope switch; NC + NO; SID; -30÷80°C Manufacturer series: SID Type of safety switch: singlesided rope switch Contacts electrical parameters: 240V AC / 3A Operating temperature: -30...80°C Electrical connection: M20 x2 IP rating: IP65 Body material: aluminium Contacts configuration: NC + NO Anzahl je Verpackung: 1 Stücke | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| SID-UV2Z P-RAST | BERNSTEIN AG | Category: Line Operated Safety Switches Description: Safety switch: singlesided rope switch; (NC + NO) x2; SID; IP65 Manufacturer series: SID Operating temperature: -30...80°C Electrical connection: M20 x2 IP rating: IP65 Body material: aluminium Contacts configuration: (NC + NO) x2 Type of safety switch: singlesided rope switch Contacts electrical parameters: 240V AC / 3A | Produkt ist nicht verfügbar | |||||||||||||||||
| SID-UV2Z P-RAST | BERNSTEIN AG | Category: Line Operated Safety Switches Description: Safety switch: singlesided rope switch; (NC + NO) x2; SID; IP65 Manufacturer series: SID Operating temperature: -30...80°C Electrical connection: M20 x2 IP rating: IP65 Body material: aluminium Contacts configuration: (NC + NO) x2 Type of safety switch: singlesided rope switch Contacts electrical parameters: 240V AC / 3A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| SID00237 | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID00386 | auf Bestellung 289 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID01-03 | auf Bestellung 280 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID1102K | Power Integrations | Gate Drivers Sgl Ch 5.0A Fluxlink 75kHz 1200V IGBT | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1102K | Power Integrations | Description: DGT ISO 1KV 1CH GT DVR ESOP-R16B Packaging: Tube Package / Case: 16-PowerSOIC (0.350", 8.89mm Width), 15 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Technology: Magnetic Coupling Current - Output High, Low: 5A, 5A Voltage - Isolation: 1000Vrms Approval Agency: VDE Supplier Device Package: eSOP-R16B Rise / Fall Time (Typ): 29ns, 14ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 350ns, 350ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 22V ~ 28V | auf Bestellung 426 Stücke: Lieferzeit 10-14 Tag (e) |
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| SID1102K-TL | POWER INTEGRATIONS | Description: POWER INTEGRATIONS - SID1102K-TL - MOSFET-Treiber, 1200V Scale iDriver, 4.75V-5.25V Versorgung, 5Aout, 262ns Verzögerung, eSOP-16 tariffCode: 85423990 Sinkstrom: - Treiberkonfiguration: High-Side und Low-Side rohsCompliant: YES Leistungsschalter: IGBT, MOSFET IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - IC-Gehäuse / Bauform: eSOP Eingang: - MSL: MSL 3 - 168 Stunden usEccn: EAR99 Anzahl der Kanäle: 1Channels Betriebstemperatur, min.: -40°C Quellstrom: - Versorgungsspannung, min.: 4.75V euEccn: NLR Gate-Treiber: Isoliert Anzahl der Pins: 16Pins Produktpalette: SCALE-iDriver productTraceability: No Versorgungsspannung, max.: 5.25V Eingabeverzögerung: 262ns Ausgabeverzögerung: 262ns Betriebstemperatur, max.: 125°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 3641 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SID1102K-TL | Power Integrations | Gate Driver Magnetic Coupling; 1000Vrms; 1 Channel; 100kV/us; 29ns, 14ns; 5A; 1,79W; 75kHz; 22V~28V; -40°C~125°C; SID1102K-TL UISID1102k Anzahl je Verpackung: 2 Stücke | auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| SID1102K-TL | POWER INTEGRATIONS | Description: POWER INTEGRATIONS - SID1102K-TL - MOSFET-Treiber, 1200V Scale iDriver, 4.75V-5.25V Versorgung, 5Aout, 262ns Verzögerung, eSOP-16 tariffCode: 85423990 productTraceability: No rohsCompliant: YES euEccn: NLR Sinkstrom: -A hazardous: false rohsPhthalatesCompliant: YES Quellstrom: -A usEccn: EAR99 | auf Bestellung 3641 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SID1102K-TL | Power Integrations | Description: DGTL ISO GATE DRVR Packaging: Cut Tape (CT) Package / Case: 16-PowerSOIC (0.350", 8.89mm Width), 15 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Technology: Magnetic Coupling Current - Output High, Low: 5A, 5A Voltage - Isolation: 1000Vrms Approval Agency: VDE Supplier Device Package: eSOP-R16B Rise / Fall Time (Typ): 29ns, 14ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 350ns, 350ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 22V ~ 28V | auf Bestellung 939 Stücke: Lieferzeit 10-14 Tag (e) |
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| SID1102K-TL | Power Integrations | Gate Drivers Sgl Ch 5.0A Fluxlink 75kHz 1200V IGBT | auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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| SID1102K-TL | Power Integrations | Description: DGTL ISO GATE DRVR Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOIC (0.350", 8.89mm Width), 15 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Technology: Magnetic Coupling Current - Output High, Low: 5A, 5A Voltage - Isolation: 1000Vrms Approval Agency: VDE Supplier Device Package: eSOP-R16B Rise / Fall Time (Typ): 29ns, 14ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 350ns, 350ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 22V ~ 28V | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1112K | Power Integrations | Description: DGT ISO 5KV 1CH GT DVR ESOP-R16B Packaging: Tube Package / Case: 16-PowerSOIC (0.350", 8.89mm Width), 15 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 1A Technology: Magnetic Coupling Current - Output High, Low: 480mA, 520mA Voltage - Isolation: 5000Vrms Approval Agency: VDE Supplier Device Package: eSOP-R16B Rise / Fall Time (Typ): 1.125µs, 1.125µs (Max) Common Mode Transient Immunity (Min): 50kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 340ns, 330ns Number of Channels: 1 Voltage - Output Supply: 22V ~ 28V | auf Bestellung 157 Stücke: Lieferzeit 10-14 Tag (e) |
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| SID1112K | Power Integrations | Gate Drivers Sgl Ch 8.0A Fluxlink 250kHz 260ns 1.0A | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1112K-TL | Power Integrations | Gate Drivers Sgl Ch 8.0A Fluxlink 250kHz 260ns 1.0A | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1112K-TL | Power Integrations | Description: DGT ISO 5KV 1CH GT DVR ESOP-R16B Packaging: Cut Tape (CT) Package / Case: 16-PowerSOIC (0.350", 8.89mm Width), 15 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 1A Technology: Magnetic Coupling Current - Output High, Low: 480mA, 520mA Voltage - Isolation: 5000Vrms Approval Agency: VDE Supplier Device Package: eSOP-R16B Rise / Fall Time (Typ): 1.125µs, 1.125µs (Max) Common Mode Transient Immunity (Min): 50kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 340ns, 330ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 22V ~ 28V | auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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| SID1112K-TL | Power Integrations | Description: DGT ISO 5KV 1CH GT DVR ESOP-R16B Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOIC (0.350", 8.89mm Width), 15 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 1A Technology: Magnetic Coupling Current - Output High, Low: 480mA, 520mA Voltage - Isolation: 5000Vrms Approval Agency: VDE Supplier Device Package: eSOP-R16B Rise / Fall Time (Typ): 1.125µs, 1.125µs (Max) Common Mode Transient Immunity (Min): 50kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 340ns, 330ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 22V ~ 28V | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1132K | Power Integrations | Gate Drivers Sgl Ch 2.5A Fluxlink 250kHz Delay 260ns | auf Bestellung 94 Stücke: Lieferzeit 10-14 Tag (e) |
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| SID1132K | Power Integrations | Description: DGT ISO 5KV 1CH GT DVR ESOP-R16B Packaging: Tube Package / Case: 16-PowerSOIC (0.350", 8.89mm Width), 15 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 2.5A Technology: Magnetic Coupling Current - Output High, Low: 1.2A, 1.3A Voltage - Isolation: 5000Vrms Supplier Device Package: eSOP-R16B Rise / Fall Time (Typ): 450ns, 450ns (Max) Propagation Delay tpLH / tpHL (Max): 340ns, 330ns Number of Channels: 1 Voltage - Output Supply: 22V ~ 28V | auf Bestellung 144 Stücke: Lieferzeit 10-14 Tag (e) |
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| SID1132K-TL | Power Integrations | Description: DGTL ISO 5KV GATE DRVR ESOP-R16B | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1132K-TL | Power Integrations | Gate Drivers Sgl Ch 2.5A Fluxlink 250kHz Delay 260ns | auf Bestellung 2800 Stücke: Lieferzeit 10-14 Tag (e) |
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| SID1132K-TL | POWER INTEGRATIONS | Description: POWER INTEGRATIONS - SID1132K-TL - MOSFET-Treiber, High-Side & Low-Side, 4.75V-5.25V Versorgung, 2.5Aout, 262ns Verzögerung, eSOP-16 Sinkstrom: - Treiberkonfiguration: High-Side und Low-Side Leistungsschalter: IGBT, MOSFET Eingang: - MSL: MSL 3 - 168 Stunden Anzahl der Kanäle: 1 Betriebstemperatur, min.: -40 Versorgungsspannung, min.: 4.75 Quellstrom: - Spitzenausgangsstrom: 2.5 Bauform - Treiber: eSOP Anzahl der Pins: 16 Produktpalette: SCALE-iDriver Versorgungsspannung, max.: 5.25 Eingabeverzögerung: 253 Ausgabeverzögerung: 262 Betriebstemperatur, max.: 125 SVHC: No SVHC (15-Jan-2018) | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1132K-TL | Power Integrations | Description: DGTL ISO 5KV GATE DRVR ESOP-R16B | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1132K-TL | POWER INTEGRATIONS | Description: POWER INTEGRATIONS - SID1132K-TL - MOSFET-Treiber, High-Side & Low-Side, 4.75V-5.25V Versorgung, 2.5Aout, 262ns Verzögerung, eSOP-16 Sinkstrom: - Treiberkonfiguration: High-Side und Low-Side Leistungsschalter: IGBT, MOSFET Eingang: - MSL: MSL 3 - 168 Stunden Anzahl der Kanäle: 1 Betriebstemperatur, min.: -40 Versorgungsspannung, min.: 4.75 Quellstrom: - Spitzenausgangsstrom: 2.5 Bauform - Treiber: eSOP Anzahl der Pins: 16 Produktpalette: SCALE-iDriver Versorgungsspannung, max.: 5.25 Eingabeverzögerung: 253 Ausgabeverzögerung: 262 Betriebstemperatur, max.: 125 SVHC: No SVHC (15-Jan-2018) | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1132KQ | Power Integrations | Description: DGT ISO 5KV 1CH GT DVR ESOP-R16B Packaging: Tube Package / Case: 16-PowerSOIC (0.350", 8.89mm Width), 15 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 2.5A Technology: Magnetic Coupling Current - Output High, Low: 1.2A, 1.3A Voltage - Isolation: 5000Vrms Supplier Device Package: eSOP-R16B Rise / Fall Time (Typ): 450ns, 450ns Common Mode Transient Immunity (Min): 50kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 340ns, 330ns Grade: Automotive Part Status: Active Number of Channels: 1 Voltage - Output Supply: 22V ~ 28V Qualification: AEC-Q100 | auf Bestellung 220 Stücke: Lieferzeit 10-14 Tag (e) |
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| SID1132KQ | Power Integrations | Gate Drivers 2.5A, 1200V 75kHz 260ns AEC Q-100 | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1132KQ | POWER INTEGRATIONS | Description: POWER INTEGRATIONS - SID1132KQ - Gate-Treiber, AEC-Q100, 1 Kanal, IGBT, MOSFET, 15 Pins, eSOP-R16B Sinkstrom: 2.6 Treiberkonfiguration: - Leistungsschalter: IGBT, MOSFET Eingang: - MSL: MSL 3 - 168 Stunden Anzahl der Kanäle: 1 Betriebstemperatur, min.: -40 Quellstrom: 2.4 Versorgungsspannung, min.: 4.75 Bauform - Treiber: eSOP-R16B Anzahl der Pins: 15 Produktpalette: SCALE-iDriver Versorgungsspannung, max.: 5.25 Eingabeverzögerung: 253 Ausgabeverzögerung: 262 Betriebstemperatur, max.: 125 SVHC: No SVHC (08-Jul-2021) | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1132KQ-TL | Power Integrations | Description: DGT ISO 5KV 1CH GT DVR ESOP-R16B Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOIC (0.350", 8.89mm Width), 15 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 2.5A Technology: Magnetic Coupling Current - Output High, Low: 1.2A, 1.3A Voltage - Isolation: 5000Vrms Supplier Device Package: eSOP-R16B Rise / Fall Time (Typ): 450ns, 450ns Common Mode Transient Immunity (Min): 50kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 340ns, 330ns Grade: Automotive Part Status: Active Number of Channels: 1 Voltage - Output Supply: 22V ~ 28V Qualification: AEC-Q100 | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SID1132KQ-TL | Power Integrations | Gate Drivers 2.5A, 1200V 75kHz 260ns AEC Q-100 | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1132KQ-TL | POWER INTEGRATIONS | Description: POWER INTEGRATIONS - SID1132KQ-TL - Gate-Treiber, AEC-Q100, 1 Kanäle, IGBT, MOSFET, 16 Pin(s), eSOP-R16B Sinkstrom: 2.6 Treiberkonfiguration: - Leistungsschalter: IGBT, MOSFET Eingang: - MSL: MSL 3 - 168 Stunden Anzahl der Kanäle: 1 Betriebstemperatur, min.: -40 Quellstrom: 2.4 Versorgungsspannung, min.: 4.75 Bauform - Treiber: eSOP-R16B Anzahl der Pins: 16 Produktpalette: SCALE-iDriver Versorgungsspannung, max.: 5.25 Eingabeverzögerung: 253 Ausgabeverzögerung: 262 Betriebstemperatur, max.: 125 SVHC: No SVHC (08-Jul-2021) | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1132KQ-TL | Power Integrations | Description: DGT ISO 5KV 1CH GT DVR ESOP-R16B Packaging: Cut Tape (CT) Package / Case: 16-PowerSOIC (0.350", 8.89mm Width), 15 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 2.5A Technology: Magnetic Coupling Current - Output High, Low: 1.2A, 1.3A Voltage - Isolation: 5000Vrms Supplier Device Package: eSOP-R16B Rise / Fall Time (Typ): 450ns, 450ns Common Mode Transient Immunity (Min): 50kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 340ns, 330ns Grade: Automotive Part Status: Active Number of Channels: 1 Voltage - Output Supply: 22V ~ 28V Qualification: AEC-Q100 | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SID1151K | Power Integrations | Gate Drivers 5A, 650V 75kHz 260ns 1200V isolation | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1151K-TL | Power Integrations | Gate Drivers 5A, 650V 75kHz 260ns 1200V isolation | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1152K | Power Integrations, Inc. | Single Channel IGBT/MOSFET Gate Driver Up to 8 A Providing Reinforced Galvanic Isolation | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SID1152K | Power Integrations | Gate Drivers Sgl Ch 5.0A Fluxlink 250kHz Delay 260ns | auf Bestellung 254 Stücke: Lieferzeit 10-14 Tag (e) |
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| SID1152K | Power Integrations | Description: DGTL ISO 5KV GATE DRVR ESOP-R16B | auf Bestellung 176 Stücke: Lieferzeit 10-14 Tag (e) |
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| SID1152K | Power Integrations, Inc. | Single Channel IGBT/MOSFET Gate Driver Up to 8 A Providing Reinforced Galvanic Isolation | auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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| SID1152K-TL | Power Integrations | Description: DGT ISO 5KV 1CH GT DVR ESOP-R16B Packaging: Cut Tape (CT) Package / Case: 16-PowerSOIC (0.350", 8.89mm Width), 15 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 5A Technology: Magnetic Coupling Current - Output High, Low: 2.4A, 2.6A Voltage - Isolation: 5000Vrms Supplier Device Package: eSOP-R16B Rise / Fall Time (Typ): 225ns, 225ns (Max) Propagation Delay tpLH / tpHL (Max): 340ns, 330ns Number of Channels: 1 Voltage - Output Supply: 22V ~ 28V | auf Bestellung 1390 Stücke: Lieferzeit 10-14 Tag (e) |
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| SID1152K-TL | POWER INTEGRATIONS | Description: POWER INTEGRATIONS - SID1152K-TL - MOSFET-Treiber, High-Side & Low-Side, 4.75V-5.25V Versorgung, 5Aout, 262ns Verzögerung, eSOP-16 tariffCode: 85423990 Sinkstrom: - Treiberkonfiguration: High-Side und Low-Side rohsCompliant: YES Leistungsschalter: IGBT, MOSFET IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - IC-Gehäuse / Bauform: eSOP Eingang: - MSL: MSL 3 - 168 Stunden usEccn: EAR99 Anzahl der Kanäle: 1Kanäle Betriebstemperatur, min.: -40°C Quellstrom: - Versorgungsspannung, min.: 4.75V euEccn: NLR Gate-Treiber: Isoliert Anzahl der Pins: 16Pin(s) Produktpalette: SCALE-iDriver productTraceability: No Versorgungsspannung, max.: 5.25V Eingabeverzögerung: 253ns Ausgabeverzögerung: 262ns Betriebstemperatur, max.: 125°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SID1152K-TL | Power Integrations | Description: DGT ISO 5KV 1CH GT DVR ESOP-R16B Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOIC (0.350", 8.89mm Width), 15 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 5A Technology: Magnetic Coupling Current - Output High, Low: 2.4A, 2.6A Voltage - Isolation: 5000Vrms Supplier Device Package: eSOP-R16B Rise / Fall Time (Typ): 225ns, 225ns (Max) Propagation Delay tpLH / tpHL (Max): 340ns, 330ns Number of Channels: 1 Voltage - Output Supply: 22V ~ 28V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SID1152K-TL | POWER INTEGRATIONS | Description: POWER INTEGRATIONS - SID1152K-TL - MOSFET-Treiber, High-Side & Low-Side, 4.75V-5.25V Versorgung, 5Aout, 262ns Verzögerung, eSOP-16 tariffCode: 85423990 Sinkstrom: - Treiberkonfiguration: High-Side und Low-Side rohsCompliant: YES Leistungsschalter: IGBT, MOSFET IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - IC-Gehäuse / Bauform: eSOP Eingang: - MSL: MSL 3 - 168 Stunden usEccn: EAR99 Anzahl der Kanäle: 1Kanäle Betriebstemperatur, min.: -40°C Quellstrom: - Versorgungsspannung, min.: 4.75V euEccn: NLR Gate-Treiber: Isoliert Anzahl der Pins: 16Pin(s) Produktpalette: SCALE-iDriver productTraceability: No Versorgungsspannung, max.: 5.25V Eingabeverzögerung: 253ns Ausgabeverzögerung: 262ns Betriebstemperatur, max.: 125°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SID1152K-TL | Power Integrations | Gate Drivers Sgl Ch 5.0A Fluxlink 250kHz Delay 260ns | auf Bestellung 4956 Stücke: Lieferzeit 10-14 Tag (e) |
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| SID116 | Category: DC Motor Controllers Description: DC-motor driver; for DIN rail mounting; IP20; 138x80x30mm; 16A Type of module: DC-motor driver Mounting: for DIN rail mounting Operating temperature: 5...50°C IP rating: IP20 Body dimensions: 138x80x30mm Rated continuous current: 16A Supply voltage: 12...30V DC Interface: RS485; USB Anzahl je Verpackung: 1 Stücke | auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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| SID116 | Category: DC Motor Controllers Description: DC-motor driver; for DIN rail mounting; IP20; 138x80x30mm; 16A Type of module: DC-motor driver Mounting: for DIN rail mounting Operating temperature: 5...50°C IP rating: IP20 Body dimensions: 138x80x30mm Rated continuous current: 16A Supply voltage: 12...30V DC Interface: RS485; USB | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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| SID1181K | Power Integrations | Gate Drivers 8A, 650V 75kHz 260ns 1200V isolation | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1181K-TL | Power Integrations | Gate Drivers 8A, 650V 75kHz 260ns 1200V isolation | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1181KQ | Power Integrations | Description: DGT ISO 5KV 1CH GT DVR ESOP-R16B Packaging: Tube Package / Case: 16-PowerSOIC (0.350", 8.89mm Width), 15 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 8A Technology: Capacitive Coupling Current - Output High, Low: 3.6A, 4A Voltage - Isolation: 5000Vrms Approval Agency: CSA, UL, VDE Supplier Device Package: eSOP-R16B Rise / Fall Time (Typ): 465ns, 460ns Common Mode Transient Immunity (Min): 50kV/µs Propagation Delay tpLH / tpHL (Max): 340ns, 330ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 22V ~ 28V | auf Bestellung 2067 Stücke: Lieferzeit 10-14 Tag (e) |
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| SID1181KQ | POWER INTEGRATIONS | Description: POWER INTEGRATIONS - SID1181KQ - Gate-Treiber, AEC-Q100, 1 Kanäle, IGBT, MOSFET, 15 Pin(s), eSOP-R16B Sinkstrom: 7.8 Treiberkonfiguration: - Leistungsschalter: IGBT, MOSFET Eingang: - MSL: MSL 3 - 168 Stunden Anzahl der Kanäle: 1 Betriebstemperatur, min.: -40 Quellstrom: 7.3 Versorgungsspannung, min.: 4.75 Bauform - Treiber: eSOP-R16B Anzahl der Pins: 15 Produktpalette: SCALE-iDriver Versorgungsspannung, max.: 5.25 Eingabeverzögerung: 253 Ausgabeverzögerung: 262 Betriebstemperatur, max.: 125 SVHC: No SVHC (08-Jul-2021) | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1181KQ | Power Integrations | Gate Drivers 8A 750V Reinforced 75kHz 260ns AEC-Q100 | auf Bestellung 140 Stücke: Lieferzeit 10-14 Tag (e) |
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| SID1181KQ-TL | Power Integrations | Gate Drivers 8A 750V Reinforced 75kHz 260ns AEC-Q100 | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1181KQ-TL | Power Integrations | Description: DGT ISO 5KV 1CH GT DVR ESOP-R16B Packaging: Cut Tape (CT) Package / Case: 16-PowerSOIC (0.350", 8.89mm Width), 15 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 8A Technology: Capacitive Coupling Current - Output High, Low: 3.6A, 4A Voltage - Isolation: 5000Vrms Approval Agency: CSA, UL, VDE Supplier Device Package: eSOP-R16B Rise / Fall Time (Typ): 465ns, 460ns Common Mode Transient Immunity (Min): 50kV/µs Propagation Delay tpLH / tpHL (Max): 340ns, 330ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 22V ~ 28V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SID1181KQ-TL | Power Integrations | Description: DGT ISO 5KV 1CH GT DVR ESOP-R16B Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOIC (0.350", 8.89mm Width), 15 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 8A Technology: Capacitive Coupling Current - Output High, Low: 3.6A, 4A Voltage - Isolation: 5000Vrms Approval Agency: CSA, UL, VDE Supplier Device Package: eSOP-R16B Rise / Fall Time (Typ): 465ns, 460ns Common Mode Transient Immunity (Min): 50kV/µs Propagation Delay tpLH / tpHL (Max): 340ns, 330ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 22V ~ 28V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SID1181KQ-TL | POWER INTEGRATIONS | Description: POWER INTEGRATIONS - SID1181KQ-TL - Gate-Treiber, AEC-Q100, 1 Kanäle, IGBT, MOSFET, 16 Pin(s), eSOP-R16B Sinkstrom: 7.8 Treiberkonfiguration: - Leistungsschalter: IGBT, MOSFET Eingang: - MSL: MSL 3 - 168 Stunden Anzahl der Kanäle: 1 Betriebstemperatur, min.: -40 Quellstrom: 7.3 Versorgungsspannung, min.: 4.75 Bauform - Treiber: eSOP-R16B Anzahl der Pins: 16 Produktpalette: SCALE-iDriver Versorgungsspannung, max.: 5.25 Eingabeverzögerung: 253 Ausgabeverzögerung: 262 Betriebstemperatur, max.: 125 SVHC: No SVHC (08-Jul-2021) | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1182K | Power Integrations | Description: DGTL ISO 5KV GATE DRVR ESOP-R16B Packaging: Tube Package / Case: 16-PowerSOIC (0.350", 8.89mm Width), 15 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 8A Technology: Magnetic Coupling Current - Output High, Low: 3.6A, 4A Voltage - Isolation: 5000Vrms Supplier Device Package: eSOP-R16B Rise / Fall Time (Typ): 90ns, 81ns Propagation Delay tpLH / tpHL (Max): 340ns, 330ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 22V ~ 28V | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| SID1182K | Power Integrations | Gate Drivers Sgl Ch 8.0A Fluxlink 250kHz Delay 260ns | auf Bestellung 3820 Stücke: Lieferzeit 10-14 Tag (e) |
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| SID1182K-TL | POWER INTEGRATIONS | Description: POWER INTEGRATIONS - SID1182K-TL - MOSFET-Treiber, High-Side & Low-Side, 4.75V-5.25V Versorgung, 8Aout, 262ns Verzögerung, eSOP-16 tariffCode: 85423990 Sinkstrom: - Treiberkonfiguration: High-Side und Low-Side rohsCompliant: YES Leistungsschalter: IGBT, MOSFET IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - IC-Gehäuse / Bauform: eSOP Eingang: - MSL: MSL 3 - 168 Stunden usEccn: EAR99 Anzahl der Kanäle: 1Kanäle Betriebstemperatur, min.: -40°C Quellstrom: - Versorgungsspannung, min.: 4.75V euEccn: NLR Gate-Treiber: Isoliert Anzahl der Pins: 16Pin(s) Produktpalette: SCALE-iDriver productTraceability: No Versorgungsspannung, max.: 5.25V Eingabeverzögerung: 253ns Ausgabeverzögerung: 262ns Betriebstemperatur, max.: 125°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2391 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SID1182K-TL | Power Integrations | Description: DGTL ISO 5KV GATE DRVR ESOP-R16B | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1182K-TL | Power Integrations | Gate Drivers Sgl Ch 8.0A Fluxlink 250kHz Delay 260ns | auf Bestellung 3728 Stücke: Lieferzeit 10-14 Tag (e) |
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| SID1182K-TL | POWER INTEGRATIONS | Description: POWER INTEGRATIONS - SID1182K-TL - MOSFET-Treiber, High-Side & Low-Side, 4.75V-5.25V Versorgung, 8Aout, 262ns Verzögerung, eSOP-16 tariffCode: 85423990 Sinkstrom: - Treiberkonfiguration: High-Side und Low-Side rohsCompliant: YES Leistungsschalter: IGBT, MOSFET IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - IC-Gehäuse / Bauform: eSOP Eingang: - MSL: MSL 3 - 168 Stunden usEccn: EAR99 Anzahl der Kanäle: 1Kanäle Betriebstemperatur, min.: -40°C Quellstrom: - Versorgungsspannung, min.: 4.75V euEccn: NLR Gate-Treiber: Isoliert Anzahl der Pins: 16Pin(s) Produktpalette: SCALE-iDriver productTraceability: No Versorgungsspannung, max.: 5.25V Eingabeverzögerung: 253ns Ausgabeverzögerung: 262ns Betriebstemperatur, max.: 125°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2391 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SID1182K-TL | Power Integrations | Description: DGTL ISO 5KV GATE DRVR ESOP-R16B | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1182KQ | Power Integrations | Gate Drivers 8A, 1200V 75kHz 260ns AEC Q-100 | auf Bestellung 140 Stücke: Lieferzeit 10-14 Tag (e) |
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| SID1182KQ | POWER INTEGRATIONS | Description: POWER INTEGRATIONS - SID1182KQ - MOSFET-Treiber, AEC-Q100, isoliert, 4.75V bis 5.25V, 278ns Verzögerung, -40°C bis 125°C, eSOP-16 Sinkstrom: - Treiberkonfiguration: Halbbrücke Leistungsschalter: SiCMOSFET Eingang: - Anzahl der Kanäle: 1 Betriebstemperatur, min.: -40 Versorgungsspannung, min.: 4.75 Quellstrom: - Spitzenausgangsstrom: 8 Bauform - Treiber: eSOP Qualifizierungsstandard der Automobilindustrie: AEC-Q100 Anzahl der Pins: 16 Produktpalette: SCALE-iDriver Versorgungsspannung, max.: 5.25 Eingabeverzögerung: 278 Ausgabeverzögerung: 287 Betriebstemperatur, max.: 125 SVHC: No SVHC (19-Jan-2021) | auf Bestellung 144 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SID1182KQ | Power Integrations | Description: DGT ISO 5KV 1CH GT DVR ESOP-R16B Packaging: Tube Package / Case: 16-PowerSOIC (0.350", 8.89mm Width), 15 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 8A Technology: Magnetic Coupling Current - Output High, Low: 3.6A, 4A Voltage - Isolation: 5000Vrms Supplier Device Package: eSOP-R16B Rise / Fall Time (Typ): 150ns, 150ns Common Mode Transient Immunity (Min): 50kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 340ns, 330ns Grade: Automotive Part Status: Active Number of Channels: 1 Voltage - Output Supply: 22V ~ 28V Qualification: AEC-Q100 | auf Bestellung 252 Stücke: Lieferzeit 10-14 Tag (e) |
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| SID1182KQ-TL | Power Integrations | Description: DGT ISO 5KV 1CH GT DVR ESOP-R16B Packaging: Cut Tape (CT) Package / Case: 16-PowerSOIC (0.350", 8.89mm Width), 15 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 8A Technology: Magnetic Coupling Current - Output High, Low: 3.6A, 4A Voltage - Isolation: 5000Vrms Supplier Device Package: eSOP-R16B Rise / Fall Time (Typ): 150ns, 150ns Common Mode Transient Immunity (Min): 50kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 340ns, 330ns Grade: Automotive Part Status: Active Number of Channels: 1 Voltage - Output Supply: 22V ~ 28V Qualification: AEC-Q100 | auf Bestellung 192 Stücke: Lieferzeit 10-14 Tag (e) |
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| SID1182KQ-TL | Power Integrations | Description: DGT ISO 5KV 1CH GT DVR ESOP-R16B Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOIC (0.350", 8.89mm Width), 15 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 8A Technology: Magnetic Coupling Current - Output High, Low: 3.6A, 4A Voltage - Isolation: 5000Vrms Supplier Device Package: eSOP-R16B Rise / Fall Time (Typ): 150ns, 150ns Common Mode Transient Immunity (Min): 50kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 340ns, 330ns Grade: Automotive Part Status: Active Number of Channels: 1 Voltage - Output Supply: 22V ~ 28V Qualification: AEC-Q100 | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1182KQ-TL | Power Integrations | Gate Drivers 8A, 1200V 75kHz 260ns AEC Q-100 | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1183K | Power Integrations | Gate Drivers Sgl Ch 8.0A Fluxlink 75kHz 260ns 1700V | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1183K | Power Integrations | Description: IC GATE DRV HI/LO SIDE ESOP-R16B Packaging: Tube Package / Case: 16-PowerSOIC (0.350", 8.89mm Width), 15 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.75V ~ 5.25V Input Type: Inverting Supplier Device Package: eSOP-R16B Rise / Fall Time (Typ): 465ns, 460ns Channel Type: Single Driven Configuration: High-Side or Low-Side Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.5V, 3.3V Current - Peak Output (Source, Sink): 8A, 48A DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1183K-TL | Power Integrations | Description: IC GATE DRV HI/LO SIDE ESOP-R16B Packaging: Cut Tape (CT) Package / Case: 16-PowerSOIC (0.350", 8.89mm Width), 15 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.75V ~ 5.25V Input Type: Inverting Supplier Device Package: eSOP-R16B Rise / Fall Time (Typ): 465ns, 460ns Channel Type: Single Driven Configuration: High-Side or Low-Side Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.5V, 3.3V Current - Peak Output (Source, Sink): 8A, 48A DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| SID1183K-TL | Power Integrations | Gate Drivers Sgl Ch 8.0A Fluxlink 75kHz 260ns 1700V | Produkt ist nicht verfügbar | |||||||||||||||||
| SID120212 | Amphenol | SID120212^AMPHENOL | Produkt ist nicht verfügbar | |||||||||||||||||
| SID120212-B | Amphenol | Amphenol | Produkt ist nicht verfügbar | |||||||||||||||||
| SID13305F00 | auf Bestellung 550 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID13305F00A | auf Bestellung 400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID13305F00A1 | EPSON | 05+ QFP | auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SID13305F00A100 | EPSON | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| SID13305F00A2 | auf Bestellung 300 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID13305F00A200 | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID13305F00AI | EPSON | QFP | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SID13305FOOA | EPSON | QFP | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SID13305FOOA | EPSON | auf Bestellung 110 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| SID13305FOOA1 | EPSON | auf Bestellung 89 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| SID13305FOOA100 | EPSON | auf Bestellung 89 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| SID13305FOOAI | EPSON | auf Bestellung 97 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| SID13305FOOB100 | EPSON | auf Bestellung 70 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| SID13305FOOBI | EPSON | auf Bestellung 79 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| SID13501 | EPSON | 09+ ZIP-18 | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SID13501F00A00 | auf Bestellung 1200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID13501F00A1 | EPSON | 06+ BGA | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SID13504F01A200 | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID13505F00A | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID13506F00 | auf Bestellung 3500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID13506F00A000 | auf Bestellung 3500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID13506F00A1 | EPSON | 0401 | auf Bestellung 31 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SID13506F00A100 | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID13506F00A2 | auf Bestellung 20 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID13506F00A200 | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID1370500A1 | EPSON | 00+ QFP | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SID13705FOOA1 | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID13706F | auf Bestellung 1791 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID13706F00A1 | auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID13706F00AI | auf Bestellung 255 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID13715B00C100 | EPSON | 06+NOP | auf Bestellung 542 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SID13715B00C100 | EPSON | 06+ | auf Bestellung 542 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SID13715B00C100 | EPSON | 09+ | auf Bestellung 575 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SID13A04F00A1 | auf Bestellung 562 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID15200F10C1 | EPSON | 00+ SOP | auf Bestellung 180 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SID15202F00C100 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID15206F00A1 | QFP128 | auf Bestellung 684 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| SID1520DOA | EPSON | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| SID1521DOA | EPSON | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| SID15400F00A100 | auf Bestellung 6800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID15400F00A200 | auf Bestellung 6800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID15400F0A100 | auf Bestellung 6800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID15400F0A200 | auf Bestellung 6800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID15400FoA100 | auf Bestellung 6800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID15400FoA200 | auf Bestellung 6800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID15400FooA100 | auf Bestellung 6800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID15400FooA200 | auf Bestellung 6800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID1540FO0A100 | auf Bestellung 6800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID1540FO0A200 | auf Bestellung 6800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID1540FooA100 | auf Bestellung 6800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID1540FooA200 | auf Bestellung 6800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID17901T00200A | auf Bestellung 3147 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID17901T00500A | auf Bestellung 39436 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID17909T00400A | auf Bestellung 23037 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID17909T01100A | auf Bestellung 4114 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID17925T00400A | auf Bestellung 3691 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID17925T00500A | auf Bestellung 15420 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID17925T00600A | auf Bestellung 10846 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID1812V2 | Category: DC Motor Controllers Description: DC-motor driver; for DIN rail mounting; Imax: 30A; IP20 Type of module: DC-motor driver Mounting: for DIN rail mounting Operating temperature: 0...50°C Maximum current: 30A IP rating: IP20 Body dimensions: 120x101x23mm Rated continuous current: 6A Supply voltage: 10...36V DC Interface: RS485 Control voltage: 0...5V DC Anzahl je Verpackung: 1 Stücke | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| SID1812V2 | Category: DC Motor Controllers Description: DC-motor driver; for DIN rail mounting; Imax: 30A; IP20 Type of module: DC-motor driver Mounting: for DIN rail mounting Operating temperature: 0...50°C Maximum current: 30A IP rating: IP20 Body dimensions: 120x101x23mm Rated continuous current: 6A Supply voltage: 10...36V DC Interface: RS485 Control voltage: 0...5V DC | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| SID2147A01-A0B0 | auf Bestellung 216 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID2284 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID2500A01-D0 | auf Bestellung 70 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID2500A01-DO | auf Bestellung 5750 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID2500A01-DOBO | auf Bestellung 2440 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID2503X01-D0 | auf Bestellung 5750 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID2504A01-DO | auf Bestellung 199 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID2504AO1-DO | auf Bestellung 393 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID2506A01 | SAMSUNG | O4 | auf Bestellung 63 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SID2506A01-D | auf Bestellung 220 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID2506X01-D1 | SAMSUNG | 02+ CDIP | auf Bestellung 1080 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SID2507 | auf Bestellung 300 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID2507B01-AO | auf Bestellung 5750 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID2511B01-AO | auf Bestellung 2436 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID2511B01-AOBO | auf Bestellung 698 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID2511C01 | SAMSUNG | 07+; | auf Bestellung 190 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SID2511C01-AO | auf Bestellung 5750 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID2511C01-AOBO | auf Bestellung 7022 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID2512X01-A0 | auf Bestellung 29 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID2512X01-AOBO | auf Bestellung 2921 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID2518X01-AO | auf Bestellung 5750 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID2519X01 | SAMSUNG | 02+ DIP | auf Bestellung 9 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SID2519X01-AO | auf Bestellung 5750 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID2520X01-SOTO | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID2551X04-AO | auf Bestellung 5750 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID2552X03-AO | auf Bestellung 5750 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID2686M | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID303EBTP18 | 06+ | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| SID303EBTP18 | auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID3121286J | auf Bestellung 29 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID3361 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID342402 | Amphenol Pcd | Circular MIL Spec Connector | Produkt ist nicht verfügbar | |||||||||||||||||
| SID342402 | Amphenol | SID342402^AMPHENOL | Produkt ist nicht verfügbar | |||||||||||||||||
| SID342406 | Amphenol | SID342406^AMPHENOL | Produkt ist nicht verfügbar | |||||||||||||||||
| SID342406 | Amphenol | Circular MIL Spec Connector SIM 6 BACKSHELL ASSY | Produkt ist nicht verfügbar | |||||||||||||||||
| SID5486 | auf Bestellung 310 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID5514C03-AO | auf Bestellung 5750 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID5514C16-AO | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SID89G | SIE | auf Bestellung 753 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| SIDA | SIEMENS | BGA | auf Bestellung 3325 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SIDAZP | SIEMENS | BGA | auf Bestellung 3325 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| SIDC01D120H6 | Infineon Technologies | Description: DIODE GP 1.2KV 600MA WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 600mA Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 600 mA Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC01D60C6 | Infineon Technologies | Description: DIODE GEN PURP WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC01D60C8X1SA2 | Infineon Technologies | SP000909888 | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC02D60C6 | Infineon Technologies | Description: DIODE GEN PURP 600V 6A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC02D60C6X1SA4 | Infineon Technologies | Description: DIODE GP 600V 6A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 6 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC02D60C6X1SA4 | Infineon Technologies | Diode Switching 600V 6A 2-Pin Die | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC02D60C8F1SA1 | Infineon Technologies | Description: DIODE SWITCHING 600V 6A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC02D60C8F1SA1 | Infineon Technologies | SP000909890 | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC02D60F6 | Infineon Technologies | Description: DIODE GEN PURP 600V 3A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC02D60F6X1SA1 | Infineon Technologies | Description: DIODE GP 600V 3A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC02D60F6X1SA1 | Infineon Technologies | Rectifier Diode Switching 600V 3A Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC03D120F6 | Infineon Technologies | Description: DIODE GEN PURP 1.2KV 2A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC03D120F6X1SA1 | Infineon Technologies | Rectifier Diode Switching 1.2KV 2A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC03D120F6X1SA1 | Infineon Technologies | Description: DIODE GP 1.2KV 2A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 2 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC03D120H6 | Infineon Technologies | Description: DIODE GEN PURP 1.2KV 3A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC03D120H6X1SA3 | Infineon Technologies | Description: DIODE GP 1.2KV 3A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC03D120H8X1SA1 | Infineon Technologies | Rectifier Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC03D120H8X1SA1 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC03D60C6 | Infineon Technologies | Description: DIODE GEN PURP 600V 10A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC03D60C6X1SA2 | Infineon Technologies | Rectifier Diode Switching 600V 10A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC03D60C6X1SA2 | Infineon Technologies | Description: DIODE GP 600V 10A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 10 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC03D60C8F1SA1 | Infineon Technologies | SP000909892 | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC03D60C8X1SA2 | Infineon Technologies | Description: DIODE SWITCHING 600V 10A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC03D60C8X7SA2 | Infineon Technologies | Description: DIODE SWITCHING 600V 10A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC03D60F6 | Infineon Technologies | Description: DIODE GEN PURP 600V 6A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC03D60F6X1SA2 | Infineon Technologies | Description: DIODE GP 600V 6A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC03D60F6X7SA1 | Infineon Technologies | Description: DIODE SWITCHING 600V WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC04D60F6 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC04D60F6X1SA2 | Infineon Technologies | Description: DIODE SWITCHING 600V WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC04D60F6X1SA3 | Infineon Technologies | Description: DIODE GP 600V 9A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 9A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC04D60F6X1SA3 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC04D60F6X1SA3 | Infineon Technologies | Rectifier Diode Switching 600V 9A Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC04D60F6X1SA4 | Infineon Technologies | Description: DIODE SWITCHING 600V WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC04D60F6X7SA1 | Infineon Technologies | Description: DIODE SWITCHING 600V WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC04D60F6X7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC04D60F6ZJ | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC05D60C6 | Infineon Technologies | Description: DIODE GEN PURP 600V 15A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC05D60C6X1SA2 | Infineon Technologies | Rectifier Diode Switching 600V 15A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC05D60C6X1SA2 | Infineon Technologies | Description: DIODE GP 600V 15A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC05D60C8X1SA1 | Infineon Technologies | SP000881368 | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D120E6 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D120E6X1SA3 | Infineon Technologies | Description: DIODE GP 1.2KV 5A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 5 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D120E6X1SA3 | Infineon Technologies | Rectifier Diode Switching 1.2KV 5A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D120E6X1SA3 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D120E6X7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D120E6ZJ | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D120EP6 | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D120F6 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D120F6X1SA2 | Infineon Technologies | Rectifier Diode Switching 1.2KV 5A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D120F6X1SA2 | Infineon Technologies | Description: DIODE GP 1.2KV 5A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 5 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D120F6X1SA2 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D120F6ZJ | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D120H6 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D120H6X1SA4 | Infineon Technologies | Description: DIODE GP 1.2KV 7.5A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 7.5A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 7.5 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D120H6X1SA4 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D120H6X1SA4 | Infineon Technologies | Diode Switching 1.2KV 7.5A 2-Pin Die | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D120H6ZJ | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D120H8 | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D120H8X1SA2 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D120H8X1SA2 | Infineon Technologies | Rectifier Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D120H8X1SA2 | Infineon Technologies | Description: DIODE GP 1.2KV 7.5A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 7.5A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D120H8X1SA3 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D120H8X7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60AC6 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60AC6X1SA1 | Infineon Technologies | Description: DIODE GP 600V 20A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 20 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60AC6X1SA1 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60AC6X1SA1 | Infineon Technologies | Rectifier Diode Switching 600V 20A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60AC6X7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60AC6ZJ | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60AC8 | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60AC8X1SA1 | Infineon Technologies | SP000909894 | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60AC8X7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60C6 | Infineon Technologies | Description: DIODE GP 600V 20A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 20 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60C6 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60C6X1SA3 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60C6ZJ | Infineon Technologies | Rectifier Diode Switching 600V 20A 2-Pin Die | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60C6ZJ | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60C8 | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60C8F1SA1 | Infineon Technologies | SP000909896 | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60C8X1SA2 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60C8X7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60E6 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60E6X1SA1 | Infineon Technologies | Description: DIODE GEN PURP 600V 10A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60E6X1SA3 | Infineon Technologies | Description: DIODE GP 600V 10A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60E6X1SA3 | Infineon Technologies | Rectifier Diode Switching 600V 10A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60E6X1SA3 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60E6X1SA4 | Infineon Technologies | Description: DIODE GEN PURP 600V 10A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60E6X7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60E6X7SA1 | Infineon Technologies | Description: DIODE GEN PURP 600V 10A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60E6ZJ | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60F6 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60F6X1SA2 | Infineon Technologies | Description: DIODE GEN PURP 600V 15A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60F6X1SA3 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60F6X1SA3 | Infineon Technologies | Description: DIODE GP 600V 15A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60F6X1SA3 | Infineon Technologies | Rectifier Diode Switching 600V 15A Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60F6X1SA4 | Infineon Technologies | Description: DIODE GEN PURP 600V 15A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60F6X7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60F6X7SA1 | Infineon Technologies | Description: DIODE GEN PURP 600V 15A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D60F6ZJ | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D65AC8 | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D65C8 | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D65C8X1SA1 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D65C8X1SA1 | Infineon Technologies | Description: DIODE GEN PURP 650V 20A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 20 A Current - Reverse Leakage @ Vr: 240 nA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D65C8X1SA1 | Infineon Technologies | Rectifier Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D90G6 | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC06D90G6X7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC07D60AF6 | Infineon Technologies | Description: DIODE GEN PURP 600V 22.5A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC07D60AF6X1SA1 | Infineon Technologies | Description: DIODE GP 600V 22.5A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 22.5A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC07D60E6 | Infineon Technologies | Description: DIODE GEN PURP 600V 15A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC07D60E6X1SA1 | Infineon Technologies | Rectifier Diode Switching 600V 15A Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC07D60E6X1SA1 | Infineon Technologies | Description: DIODE GP 600V 15A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC07D60F6 | Infineon Technologies | Description: DIODE GEN PURP 600V 22.5A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC07D60F6X1SA2 | Infineon Technologies | Description: DIODE GP 600V 22.5A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 22.5A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC07D60F6X1SA3 | Infineon Technologies | Description: DIODE SWITCHING 600V WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC07D60F6X1SA5 | Infineon Technologies | Description: DIODE SWITCHING 600V WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC07D60F6X7SA1 | Infineon Technologies | Description: DIODE SWITCHING 600V WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D120F6 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D120F6X1SA3 | Infineon Technologies | Description: DIODE GP 1.2KV 7A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 7A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 7 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D120F6X1SA3 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D120F6X7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D120F6ZJ | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D120H6 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D120H6X1SA1 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D120H6X1SA1 | Infineon Technologies | Description: DIODE GP 1.2KV 10A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D120H6ZJ | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D120H8 | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D120H8X1SA1 | Infineon Technologies | Description: DIODE GEN PURP 1.2KV 150A WAFER Packaging: Bulk Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 150A Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D120H8X1SA1 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D120H8X1SA4 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D120H8X7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D60C6 | Infineon Technologies | Description: DIODE GP 600V 30A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D60C6 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D60C6 | Infineon Technologies | Rectifier Diode Switching 600V 30A 2-Pin Die | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D60C6X1SA2 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D60C6Y | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D60C6Y | Infineon Technologies | Description: DIODE GP 600V 30A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D60C6YX1SA1 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D60C6ZJ | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D60C8 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D60C8X1SA1 | Infineon Technologies | Description: DIODE GEN PURP 600V 30A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D60C8X1SA2 | Infineon Technologies | Description: DIODE GEN PURP 600V 30A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D60C8X1SA3 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D60C8X1SA3 | Infineon Technologies | Rectifier Diode Switching 600V 30A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D60C8X1SA3 | Infineon Technologies | Description: DIODE GEN PURP 600V 30A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D60C8X7SA1 | Infineon Technologies | Description: DIODE GEN PURP 600V 30A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D60C8X7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D65C8 | Infineon / IR | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D65C8X1SA2 | Infineon Technologies | Rectifier Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D65C8X1SA2 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D65C8X1SA2 | Infineon Technologies | Rectifier Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC08D65C8X7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC09D60E6 | Infineon Technologies | Description: DIODE GEN PURP 600V 20A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC09D60E6 UNSAWN | Infineon Technologies | Description: DIODE GP 600V 20A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC09D60E6X1SA1 | Infineon Technologies | Description: DIODE GP 600V 20A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC09D60E6X1SA3 | Infineon Technologies | Description: DIODE SWITCHING 600V WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC09D60E6Y | Infineon Technologies | Description: DIODE GEN PURP 600V 20A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC09D60E6YX1SA1 | Infineon Technologies | Description: DIODE GP 600V 20A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC09D60F6 | Infineon Technologies | Description: DIODE GEN PURP 600V 30A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC09D60F6X1SA1 | Infineon Technologies | Description: DIODE SWITCHING 600V WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC09D60F6X1SA2 | Infineon Technologies | Description: DIODE GP 600V 30A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC09D60F6X1SA4 | Infineon Technologies | Description: DIODE SWITCHING 600V WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC09D60F6X1SA5 | Infineon Technologies | Description: DIODE SWITCHING 600V WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC105D120H8X1SA1 | Infineon Technologies | Description: DIODE GP 1.2KV 200A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 200A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC105D120H8X1SA1 | Infineon Technologies | Diode Switching 1.2KV 200A Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC10D120H6X1SA5 | Infineon Technologies | Description: DIODE GP 1.2KV 15A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC10D120H8X1SA2 | Infineon Technologies | Diode 1.2KV 15A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC10D120H8X1SA2 | Infineon Technologies | Description: DIODE GP 1.2KV 15A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC110D170H | Infineon Technologies | Description: DIODE GEN PURP 1.7KV 200A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC110D170HX1SA2 | Infineon Technologies | Description: DIODE GP 1.7KV 200A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 200A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 200 A Current - Reverse Leakage @ Vr: 27 µA @ 1700 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC110D170HX1SA2 | Infineon Technologies | Rectifier Diode Switching 1.7KV 200A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC112D170HX1SA2 | Infineon Technologies | Rectifier Diode Switching 1.7KV 205A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC11D60SIC3 | Infineon Technologies | Description: DIODE SIL CARB 600V 4A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 150pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120E6 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120E6X1SA3 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120E6X1SA4 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120E6X1SA4 | Infineon Technologies | Description: DIODE GP 1.2KV 15A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120E6X1SA4 | Infineon Technologies | Rectifier Diode Switching 1.2KV 15A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120E6X7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120E6ZJ | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120EP6 | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120F6 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120F6X1SA3 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120F6X1SA3 | Infineon Technologies | Description: DIODE GP 1.2KV 15A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120F6X1SA3 | Infineon Technologies | Rectifier Diode Switching 1.2KV 15A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120F6X7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120F6ZJ | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120G6 | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120H6 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120H6X1SA1 | Infineon Technologies | Rectifier Diode Switching 1.2KV 25A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120H6X1SA1 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120H6X1SA1 | Infineon Technologies | Description: DIODE GP 1.2KV 25A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 25 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120H6Y | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120H6ZJ | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120H8 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120H8X1SA1 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120H8X1SA1 | Infineon Technologies | Description: DIODE GP 1.2KV 25A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 25 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120H8X1SA1 | Infineon Technologies | Rectifier Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D120H8X7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60C6 | Infineon Technologies | Description: DIODE GP 600V 50A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60C6 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60C6X1SA2 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60C6Y | Infineon Technologies | Description: DIODE GP 600V 50A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60C6Y | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60C6YX1SA1 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60C6ZJ | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60C8 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60C8X1SA1 | Infineon Technologies | Description: DIODE GEN PURP 600V 50A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60C8X1SA2 | Infineon Technologies | Rectifier Diode Switching 600V 50A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60C8X1SA2 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60C8X1SA2 | Infineon Technologies | Description: DIODE GEN PURP 600V 50A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60C8X1SA3 | Infineon Technologies | Description: DIODE GEN PURP 600V 50A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60C8X7SA1 | Infineon Technologies | Description: DIODE GEN PURP 600V 50A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60C8X7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60E6 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60E6NJ | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60E6X1SA1 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60E6X1SA1 | Infineon Technologies | Description: DIODE GP 600V 30A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60E6X1SA1 | Infineon Technologies | Diode Switching 600V 30A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60E6X1SA3 | Infineon Technologies | Description: DIODE GEN PURP 600V 30A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60E6X1SA4 | Infineon Technologies | Description: DIODE GEN PURP 600V 30A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60E6X7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60E6X7SA1 | Infineon Technologies | Description: DIODE GEN PURP 600V 30A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60E6YX1SA1 | Infineon Technologies | Description: DIODE GP 600V 30A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60E6YX1SA1 | Infineon Technologies | Old Part SIDC14D60E6YZJ^INFINEON | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60E6YX1SA1 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60E6ZJ | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60F6 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60F6X1SA1 | Infineon Technologies | Description: DIODE GEN PURP 600V 45A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 45A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60F6X1SA2 | Infineon Technologies | Diode Switching 600V 45A Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60F6X1SA2 | Infineon Technologies | Description: DIODE GP 600V 45A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 45A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60F6X1SA2 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60F6X1SA3 | Infineon Technologies | Description: DIODE GEN PURP 600V 45A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 45A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60F6X1SA4 | Infineon Technologies | Description: DIODE GEN PURP 600V 45A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 45A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60F6X7SA1 | Infineon Technologies | Description: DIODE GEN PURP 600V 45A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 45A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60F6X7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D60F6ZJ | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D65C8 | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D65C8A | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D65C8X1SA2 | Infineon Technologies | Rectifier Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D65C8X1SA2 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC14D65C8X7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC161D170HX1SA2 | Infineon Technologies | Rectifier Diode Switching 1.7KV 300A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC161D170HX1SA2 | Infineon Technologies | Description: DIODE GP 1.7KV 300A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 300A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 300 Voltage Coupled to Current - Reverse Leakage @ Vr: 1700 Current - Reverse Leakage @ Vr: 27 µA @ 1700 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC16D60SIC3 | Infineon Technologies | Description: DIODE SIL CARB 600V 5A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 170pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current - Reverse Leakage @ Vr: 200 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC19D60SIC3 | Infineon Technologies | Description: DIODE SIL CARB 600V 6A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC20D60C6 | Infineon Technologies | Description: DIODE GP 600V 75A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 75A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 75 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC20D60C6X1SA4 | Infineon Technologies | Diode Switching 600V 75A 2-Pin Die | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC20D60C8X1SA1 | Infineon Technologies | Rectifier Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC20D65C8X1SA2 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC23D120E6 | Infineon Technologies | Description: DIODE GEN PURP 1.2KV 25A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC23D120E6X1SA1 | Infineon Technologies | Description: DIODE GP 1.2KV 25A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 25 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC23D120E6X1SA1 | Infineon Technologies | Rectifier Diode Switching 1.2KV 25A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC23D120F6 | Infineon Technologies | Description: DIODE GEN PURP 1.2KV 25A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC23D120F6X1SA1 | Infineon Technologies | Description: DIODE GP 1.2KV 25A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 25 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC23D120H6 | Infineon Technologies | Description: DIODE GEN PURP 1.2KV 35A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC23D120H6X1SA1 | Infineon Technologies | Rectifier Diode Switching 1.2KV 35A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC23D120H6X1SA1 | Infineon Technologies | Description: DIODE GP 1.2KV 35A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 35A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 35 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC23D120H8X1SA1 | Infineon Technologies | Description: DIODE GP 1.2KV 35A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 35A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 35 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC23D60E6 | Infineon Technologies | Description: DIODE GEN PURP 600V 50A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC23D60E6X1SA4 | Infineon Technologies | Description: DIODE GP 600V 50A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC23D60E6Y | Infineon Technologies | Description: DIODE GEN PURP 600V 50A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC23D60E6YX1SA1 | Infineon Technologies | Description: DIODE GP 600V 50A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC24D30SIC3 | Infineon Technologies | Description: DIODE SILICON 300V 10A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC26D60C6 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC26D60C6 | Infineon Technologies | Description: DIODE GP 600V 100A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 100A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 100 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC26D60C6X1SA2 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC26D60C6Y | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC26D60C6YX1SA1 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC26D60C6ZJ | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC26D60C8 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC26D60C8X1SA1 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC26D60C8X1SA1 | Infineon Technologies | Rectifier Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC26D60C8X1SA1 | Infineon Technologies | Description: DIODE GEN PURP 600V 100A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 100A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 100 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC26D60C8X7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC26D65C8 | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC26D65C8A | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC26D65C8AX7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC26D65C8X1SA1 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC26D65C8X1SA1 | Infineon Technologies | Rectifier Diode 650V 100A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC26D65C8X7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D120E6 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D120E6X1SA2 | Infineon Technologies | Description: DIODE GP 1.2KV 35A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 35A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 35 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D120E6X1SA2 | Infineon Technologies | Rectifier Diode Switching 1.2KV 35A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D120E6X1SA2 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D120E6ZJ | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D120F6 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D120F6X1SA2 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D120F6X1SA2 | Infineon Technologies | Description: DIODE GP 1.2KV 35A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 35A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 35 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D120F6X1SA2 | Infineon Technologies | Rectifier Diode Switching 1.2KV 35A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D120F6ZJ | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D120H6 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D120H6X1SA4 | Infineon Technologies | Description: DIODE GP 1.2KV 50A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D120H6X1SA4 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D120H6X1SA4 | Infineon Technologies | Diode Switching 1.2KV 50A 2-Pin Die | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D120H6ZJ | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D120H8 | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D120H8X1SA4 | Infineon Technologies | Rectifier Diode Switching 1.2KV 50A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D120H8X1SA4 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D120H8X1SA4 | Infineon Technologies | Description: DIODE GP 1.2KV 50A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D120H8X7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D60E6 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D60E6NJ | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D60E6X1SA1 | Infineon Technologies | Description: DIODE GP 600V 75A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 75A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 75 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D60E6X1SA1 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D60E6X1SA1 | Infineon Technologies | Rectifier Diode Switching 600V 75A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC30D60E6ZJ | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC32D170F | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC32D170H | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC32D170HX1SA3 | Infineon Technologies | Description: DIODE GP 1.7KV 50A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 1700 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC32D170HX1SA3 | Infineon Technologies | Rectifier Diode Switching 1.7KV 50A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC32D170HX1SA3 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC32D170HZJ | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC38D60C6 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC38D60C6 | Infineon Technologies | Description: DIODE GEN PURP 600V 150A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC38D60C6A | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC38D60C6NJ | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC38D60C6X1SA3 | Infineon Technologies | Description: DIODE GP 600V 150A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 150A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC38D60C6X1SA3 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC38D60C6X1SA3 | Infineon Technologies | Diode Switching 600V 150A 2-Pin Die | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC38D60C6ZJ | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN-CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC38D60C8 | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC38D60C8X1SA1 | Infineon Technologies | Rectifier Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC38D60C8X1SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC38D60C8X1SA1 | Infineon Technologies | Description: DIODE GEN PURP 600V 150A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC38D60C8X1SA2 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC38D60C8X7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC38D65C8 | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC38D65C8A | Infineon / IR | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC38D65C8AX7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC38D65C8X1SA1 | Infineon Technologies | Diodes - General Purpose, Power, Switching DIODEN CHIPS | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC38D65C8X7SA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC42D120E6 | Infineon Technologies | Description: DIODE GEN PURP 1.2KV 50A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC42D120E6X1SA4 | Infineon Technologies | Description: DIODE GP 1.2KV 50A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC42D120E6X1SA4 | Infineon Technologies | Rectifier Diode Switching 1.2KV 50A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC42D120F6 | Infineon Technologies | Description: DIODE GEN PURP 1.2KV 50A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC42D120F6X1SA3 | Infineon Technologies | Description: DIODE GP 1.2KV 50A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC42D120H6 | Infineon Technologies | Description: DIODE GEN PURP 1.2KV 75A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC42D120H6X1SA3 | Infineon Technologies | Description: DIODE GP 1.2KV 75A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 75A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 75 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC42D120H8 | Infineon technologies | auf Bestellung 3789 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| SIDC42D120H8X1SA3 | Infineon Technologies | Description: DIODE GP 1.2KV 75A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 75A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC42D170E6 | Infineon Technologies | Description: DIODE GEN PURP 1.7KV 50A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC42D170E6X1SA2 | Infineon Technologies | Description: DIODE GP 1.7KV 50A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 1700 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC42D170E6X1SA2 | Infineon Technologies | Rectifier Diode Switching 1.7KV 50A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC42D60E6X1SA1 | Infineon Technologies | Description: DIODE GP 600V 100A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 100A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC46D170H | Infineon Technologies | Description: DIODE GEN PURP 1.7KV 75A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC46D170HX1SA2 | Infineon Technologies | Rectifier Diode Switching 1.7KV 75A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC46D170HX1SA2 | Infineon Technologies | Description: DIODE GP 1.7KV 75A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 75A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 75 A Current - Reverse Leakage @ Vr: 27 µA @ 1700 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC50D60C6X1SA1 | Infineon Technologies | Description: DIODE GP 600V 200A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 200A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 200 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC50D60C6X1SA1 | Infineon Technologies | Diode Switching 600V 200A 2-Pin Die | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC50D60C8X1SA1 | Infineon Technologies | Rectifier Diode Switching 600V 200A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC50D65C8X1SA1 | Infineon Technologies | Rectifier Diode Switching 650V 200A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC53D120H6 | Infineon Technologies | Description: DIODE GEN PURP 1.2KV 100A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC56D120E6 | Infineon Technologies | Description: DIODE GEN PURP 1.2KV 75A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC56D120F6 | Infineon Technologies | Description: DIODE GEN PURP 1.2KV 75A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC56D120F6X1SA1 | Infineon Technologies | Rectifier Diode Switching 1.2KV 75A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC56D120F6YX1SA1 | Infineon Technologies | Old Part SIDC56D120F6YZJ^INFINEON | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC56D170E6 | Infineon Technologies | Description: DIODE GEN PURP 1.7KV 75A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC56D170E6X1SA1 | Infineon Technologies | Diodes - General Purpose, Power, Switching | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC56D170E6X1SA1 | Infineon Technologies | Rectifier Diode Switching 1.7KV 75A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC56D60E6 | Infineon Technologies | Description: DIODE GEN PURP 600V 150A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC59D170H | Infineon Technologies | Description: DIODE GEN PURP 1.7KV 100A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC59D170HX1SA2 | Infineon Technologies | Rectifier Diode Switching 1.7KV 100A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC59D170HX1SA2 | Infineon Technologies | Description: DIODE GEN PURP 1.7KV 100A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC73D170E6 | Infineon Technologies | Description: DIODE GEN PURP 1.7KV 100A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC73D170E6X1SA2 | Infineon Technologies | Rectifier Diode Switching 1.7KV 100A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC73D170E6X1SA2 | Infineon Technologies | Description: DIODE GEN PURP 1.7KV 100A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC78D170H | Infineon Technologies | Description: DIODE GEN PURP 1.7KV 150A WAFER | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC78D170HX1SA1 | Infineon Technologies | Description: DIODE GP 1.7KV 150A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 150A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A Current - Reverse Leakage @ Vr: 27 µA @ 1700 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC78D170HX1SA1 | Infineon Technologies | Rectifier Diode Switching 1.7KV 150A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC81D120E6X1SA4 | Infineon Technologies | Rectifier Diode Switching 1.2KV 100A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC81D120E6X1SA4 | Infineon Technologies | Description: DIODE GP 1.2KV 100A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 100A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC81D120F6X1SA1 | Infineon Technologies | Description: DIODE GP 1.2KV 100A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 100A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 100 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC81D120F6X1SA1 | Infineon Technologies | Rectifier Diode Switching 1.2KV 100A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC81D120F6YX1SA1 | Infineon Technologies | Old Part SIDC81D120F6YZJ^INFINEON | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC81D120F6YX1SA1 | Infineon Technologies | Description: DIODE GEN PURPOSE 1.2KV Packaging: Bulk Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC81D120H6X1SA2 | Infineon Technologies | Diode Switching 1.2KV 150A 2-Pin Die | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC81D120H6X1SA2 | Infineon Technologies | Description: DIODE GP 1.2KV 150A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 150A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 150 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC81D120H8X1SA2 | Infineon Technologies | Diode Switching 1.2KV 150A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC81D120H8X1SA3 | Infineon Technologies | Description: DIODE GEN PURP 1.2KV 150A WAFER Packaging: Bulk Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 150A Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 150 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC81D60E6X1SA3 | Infineon Technologies | Rectifier Diode Switching 600V 200A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC81D60E6X1SA3 | Infineon Technologies | Description: DIODE GP 600V 200A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 200A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC81D60E6YX1SA1 | Infineon Technologies | Description: DIODE GEN PURPOSE 600V Packaging: Bulk Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC81D60E6YX1SA1 | Infineon Technologies | Old Part SIDC81D60E6YZJ^INFINEON | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC85D170HX1SA2 | Infineon Technologies | Rectifier Diode Switching 1.7KV 150A 2-Pin Die Wafer | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC85D170HX1SA2 | Infineon Technologies | Description: DIODE GP 1.7KV 150A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 150A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A Current - Reverse Leakage @ Vr: 27 µA @ 1700 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDC88D65DC8AX7SA2 | Infineon Technologies | Description: DIODE GENERAL PURPOSE 650V Packaging: Bulk Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDEGIG-GUITAREVM | Texas Instruments | Description: EVALUATION MODULE Packaging: Bulk For Use With/Related Products: NE5532, RC4558 Accessory Type: Interface Board Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDEGIG-GUITAREVM | Texas Instruments | Audio IC Development Tools SIDEGIG-GUITAREVM | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDEGIG-PROTOEVM | Texas Instruments | Prototype Audio Plug-in Module | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDEGIG-PROTOEVM | Texas Instruments | Audio IC Development Tools AUDIO REFERENCE EVM | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDEGIG-PROTOEVM | Texas Instruments | Prototype Audio Plug-in Module | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIDEGIG-PROTOEVM | Texas Instruments | Prototype Audio Plug-in Module | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIDEGIG-XOVEREVM | Texas Instruments | Analog, Active Crossover Audio Plug-in Module | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDEGIG-XOVEREVM | Texas Instruments | Audio IC Development Tools AUDIO REFERENCE EVM | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDEGIG-XOVEREVM | Texas Instruments | Analog, Active Crossover Audio Plug-in Module | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIDEGIG-XOVEREVM | Texas Instruments | Analog, Active Crossover Audio Plug-in Module | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIDHP-FD2722D-220M | Suntsu Electronics, Inc. | Description: FIXED IND 22uH SMD 25A 4.1MOHM Tolerance: ±20% Packaging: Bulk Package / Case: Nonstandard Size / Dimension: 1.075" L x 0.846" W (27.30mm x 21.50mm) Mounting Type: Through Hole Shielding: Unshielded Type: Wirewound Operating Temperature: -55°C ~ 150°C DC Resistance (DCR): 4.1mOhm Max Current - Saturation (Isat): 33A Inductance Frequency - Test: 100 kHz Height - Seated (Max): 0.898" (22.80mm) Part Status: Active Inductance: 22 µH Current Rating (Amps): 25 A | auf Bestellung 320 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDHP-FS1262-2R0M | Suntsu Electronics, Inc. | Description: FIXED IND 2uH SMD 23A 2.6MOHM Tolerance: ±20% Packaging: Bulk Package / Case: Nonstandard Size / Dimension: 0.543" L x 0.504" W (13.80mm x 12.80mm) Mounting Type: Surface Mount Shielding: Unshielded Operating Temperature: -55°C ~ 150°C DC Resistance (DCR): 2.6mOhm Max Current - Saturation (Isat): 41A Inductance Frequency - Test: 100 kHz Height - Seated (Max): 0.256" (6.50mm) Part Status: Active Inductance: 2 µH Current Rating (Amps): 23 A | auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDHP-FS1889-6R8M | Suntsu Electronics, Inc | Description: FIXED IND 6.8uH SMD 18.5A 4.7MOH Tolerance: ±20% Packaging: Bulk Package / Case: Nonstandard Size / Dimension: 0.760" L x 0.717" W (19.30mm x 18.20mm) Mounting Type: Surface Mount Shielding: Unshielded Operating Temperature: -55°C ~ 150°C DC Resistance (DCR): 4.7mOhm Max Current - Saturation (Isat): 31A Inductance Frequency - Test: 100 kHz Height - Seated (Max): 0.362" (9.20mm) Inductance: 6.8 µH Current Rating (Amps): 18.5 A | auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDHP-FS2715E-100M | Suntsu Electronics, Inc. | Description: FIXED IND 10uH SMD 32A 1.65MOHM Packaging: Bulk Tolerance: ±20% Package / Case: Nonstandard Size / Dimension: 1.098" L x 0.776" W (27.90mm x 19.70mm) Mounting Type: Surface Mount Shielding: Unshielded Type: Wirewound Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 1.65mOhm Max Current - Saturation (Isat): 23A Inductance Frequency - Test: 100 kHz Height - Seated (Max): 0.606" (15.40mm) Part Status: Active Inductance: 10 µH Current Rating (Amps): 32 A | auf Bestellung 320 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDHP-FS2715E-2R2M | Suntsu Electronics, Inc. | Description: FIXED IND 2.2uH SMD 32A 1.65MOHM Packaging: Bulk Tolerance: ±20% Package / Case: Nonstandard Size / Dimension: 1.098" L x 0.776" W (27.90mm x 19.70mm) Mounting Type: Surface Mount Shielding: Unshielded Type: Wirewound Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 1.65mOhm Max Current - Saturation (Isat): 100A Inductance Frequency - Test: 100 kHz Height - Seated (Max): 0.606" (15.40mm) Part Status: Active Inductance: 2.2 µH Current Rating (Amps): 32 A | auf Bestellung 320 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDHP-FS2818F-100M | Suntsu Electronics, Inc. | Description: FIXED IND 10uH SMD 33A 2.58MOHM | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDHP-FS2818F-220M | Suntsu Electronics, Inc. | Description: FIXED IND 22uH SMD 30A 2.58MOHM | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDMP-SP0420-1R0M | Suntsu Electronics, Inc. | Description: FIXED IND 1UH 6.2A 27MOHM SMD Tolerance: ±20% Packaging: Bulk Package / Case: Nonstandard Size / Dimension: 0.173" L x 0.165" W (4.40mm x 4.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded DC Resistance (DCR): 27mOhm Max Current - Saturation (Isat): 9A Inductance Frequency - Test: 100 kHz Height - Seated (Max): 0.079" (2.00mm) Part Status: Active Inductance: 1 µH Current Rating (Amps): 6.2 A | auf Bestellung 7984 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDMP-SP0420-2R2M | Suntsu Electronics, Inc. | Description: FIXED IND 2.2UH SMD 4.0A 65MOHM | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDMP-SP0420-4R7M | Suntsu Electronics, Inc. | Description: FIXED IND 4.7UH SMD 2.8A 115MOH | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDMP-SP0530-2R2M | Suntsu Electronics, Inc. | Description: FIXED IND 2.2UH SMD 5.9A 29MOHM Tolerance: ±20% Packaging: Bulk Package / Case: Nonstandard Size / Dimension: 0.213" L x 0.205" W (5.40mm x 5.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded DC Resistance (DCR): 29mOhm Max Current - Saturation (Isat): 9.5A Inductance Frequency - Test: 100 kHz Height - Seated (Max): 0.118" (3.00mm) Part Status: Active Inductance: 2.2 µH Current Rating (Amps): 5.9 A | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDMP-SP0530-4R7M | Suntsu Electronics, Inc | Description: FIXED IND 4.7UH SMD 4.1A 60MOHM Packaging: Bulk Tolerance: ±20% Package / Case: Nonstandard Size / Dimension: 0.213" L x 0.205" W (5.40mm x 5.20mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded DC Resistance (DCR): 60mOhm Max Current - Saturation (Isat): 5A Inductance Frequency - Test: 100 kHz Height - Seated (Max): 0.118" (3.00mm) Part Status: Active Inductance: 4.7 µH Current Rating (Amps): 4.1 A | auf Bestellung 2995 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| SIDMP-SP0730-100M | Suntsu Electronics, Inc. | Description: FIXED IND 10UH SMD 4.2A 75MOHM | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDMP-SP0730-3R3M | Suntsu Electronics, Inc. | Description: FIXED IND 3.3UH SMD 7.8A 22MOHM | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDMP-SP0730-4R7M | Suntsu Electronics, Inc. | Description: FIXED IND 4.7UH SMD 5.0A 40MOHM | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDMP-SP0730-5R6M | Suntsu Electronics, Inc. | Description: FIXED IND 5.6UH SMD 5.3A 42MOHM | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDMP-SP0740-100M | Suntsu Electronics, Inc. | Description: FIXED IND 10UH SMD 4.8A 65MOHM | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDMP-SP1040-100M | Suntsu Electronics, Inc. | Description: FIXED IND 10UH SMD 6.9A 30MOHM | auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDMP-SP1040-220M | Suntsu Electronics, Inc. | Description: FIXED IND 20UH SMD 4.7A 66MOHM Tolerance: ±20% Packaging: Bulk Package / Case: Nonstandard Size / Dimension: 0.453" L x 0.394" W (11.50mm x 10.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Molded DC Resistance (DCR): 66mOhm Max Current - Saturation (Isat): 6A Inductance Frequency - Test: 100 kHz Height - Seated (Max): 0.157" (4.00mm) Part Status: Active Inductance: 22 µH Current Rating (Amps): 4.7 A | auf Bestellung 4795 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDMP-SP1040-2R2M | Suntsu Electronics, Inc. | Description: FIXED IND 2.2UH SMD 13.2A 8MOHM | auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDO0236 | auf Bestellung 44050 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SIDO0237 | auf Bestellung 48000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SIDO0278-2 | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SIDO02782 | SILICONI | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| SIDO0279-2 | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| SIDO02792 | SILICONI | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| SIDR104ADP-T1-RE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 18.8A/81A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V Power Dissipation (Max): 5.4W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V | auf Bestellung 5970 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR104ADP-T1-RE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 18.8A/81A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V Power Dissipation (Max): 5.4W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR104ADP-T1-RE3 | Vishay Semiconductors | MOSFET N-CHANNEL 100 V | auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR104ADP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 81A Pulsed drain current: 200A Power dissipation: 100W Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR104ADP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 81A Pulsed drain current: 200A Power dissipation: 100W Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR104AEP-T1-RE3 | VISHAY | Description: VISHAY - SIDR104AEP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 100 V, 90.5 A, 0.0049 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100 Dauer-Drainstrom Id: 90.5 hazardous: false Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 120 Gate-Source-Schwellenspannung, max.: 4 euEccn: NLR Verlustleistung: 120 Bauform - Transistor: PowerPAK SO Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8 Produktpalette: TrenchFET Gen IV productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0049 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.0049 SVHC: No SVHC (08-Jul-2021) | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR104AEP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 100 V (D-S) 175C MOSFE Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 90.5A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V Power Dissipation (Max): 6.5W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V | auf Bestellung 8738 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR104AEP-T1-RE3 | Vishay | MOSFET N-CHANNEL 100-V (D-S) 175C MOS | auf Bestellung 2956 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR104AEP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 90.5A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 90.5A Pulsed drain current: 200A Power dissipation: 120W Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR104AEP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 90.5A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 90.5A Pulsed drain current: 200A Power dissipation: 120W Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR104AEP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 100 V (D-S) 175C MOSFE Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 90.5A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V Power Dissipation (Max): 6.5W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR104AEP-T1-RE3 | VISHAY | Description: VISHAY - SIDR104AEP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 100 V, 90.5 A, 0.0049 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100 Dauer-Drainstrom Id: 90.5 hazardous: false Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 120 Gate-Source-Schwellenspannung, max.: 4 euEccn: NLR Verlustleistung: 120 Bauform - Transistor: PowerPAK SO Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8 Produktpalette: TrenchFET Gen IV productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0049 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.0049 SVHC: No SVHC (08-Jul-2021) | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR140DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 25V 79A/100A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR140DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 25V 79A/100A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR140DP-T1-GE3 | Vishay Semiconductors | MOSFET 25V Vds 20/-16V Vgs PowerPAK SO-8DC | auf Bestellung 8865 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR140DP-T1-GE3 | VISHAY | SIDR140DP-T1-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR140DP-T1-RE3 | VISHAY | Description: VISHAY - SIDR140DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 25 V, 100 A, 0.00054 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 540µohm SVHC: Lead (19-Jan-2021) | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR140DP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 25-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR140DP-T1-RE3 | VISHAY | Description: VISHAY - SIDR140DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 25 V, 100 A, 0.00054 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 540µohm SVHC: Lead (19-Jan-2021) | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR140DP-T1-RE3 | Vishay / Siliconix | MOSFET N-CHANNEL 25-V (D-S) MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR140DP-T1-RE3 | VISHAY | SIDR140DP-T1-RE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR140DP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 25-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V | auf Bestellung 11998 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR140DP-T1-RE3 | Vishay | N-Channel 25-V(D-S) MOSFET PowerPAK SO8 double cooling, 0.67m @ 10V 0.9m @ 4.5V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR170DP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 200A Power dissipation: 125W Gate-source voltage: ±20V On-state resistance: 5.85mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR170DP-T1-RE3 | Vishay / Siliconix | MOSFET 100V N-CH MOSFET (D-S) | auf Bestellung 6753 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR170DP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 200A Power dissipation: 125W Gate-source voltage: ±20V On-state resistance: 5.85mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR170DP-T1-RE3 | Vishay | Trans MOSFET N-CH 100V 23.2A 8-Pin PowerPAK SO-DC EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR170DP-T1-RE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 23.2A/95A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 50 V | auf Bestellung 9265 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR170DP-T1-RE3 | Vishay | Trans MOSFET N-CH 100V 23.2A 8-Pin PowerPAK SO-DC EP T/R | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR170DP-T1-RE3 | VISHAY | Description: VISHAY - SIDR170DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 100 V, 95 A, 0.004 ohm, PowerPAK SO-DC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 95A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Verlustleistung Pd: 125W Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: PowerPAK SO-DC Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.004ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.004ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 5356 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR170DP-T1-RE3 | Vishay | Trans MOSFET N-CH 100V 23.2A 8-Pin PowerPAK SO-DC EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR170DP-T1-RE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 23.2A/95A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 50 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR220DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 25V 87.7A/100A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87.7A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 10 V | auf Bestellung 5973 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR220DP-T1-GE3 | VISHAY | Description: VISHAY - SIDR220DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 25 V, 100 A, 480 µohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 125W Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 480µohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 480µohm SVHC: Lead (19-Jan-2021) | auf Bestellung 72 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR220DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 25V 87.7A/100A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87.7A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 10 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR220DP-T1-GE3 | Vishay Semiconductors | MOSFET 25V Vds 16V Vgs PowerPAK SO-8DC | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR220DP-T1-GE3 | VISHAY | Description: VISHAY - SIDR220DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 25 V, 100 A, 480 µohm, PowerPAK SO, Oberflächenmontage Verlustleistung: 125 Kanaltyp: n-Kanal Drain-Source-Durchgangswiderstand: 480 Qualifikation: - SVHC: Lead (19-Jan-2021) | auf Bestellung 72 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR220DP-T1-RE3 | VISHAY | Description: VISHAY - SIDR220DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 25 V, 100 A, 0.00048 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 480µohm SVHC: Lead (19-Jan-2021) | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR220DP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 25-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87.7A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR220DP-T1-RE3 | Vishay / Siliconix | MOSFET N-CHANNEL 25-V (D-S) MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR220DP-T1-RE3 | VISHAY | Description: VISHAY - SIDR220DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 25 V, 100 A, 0.00048 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 480µohm SVHC: Lead (19-Jan-2021) | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR220DP-T1-RE3 | Vishay | N-Channel 25-V(D-S) MOSFET PowerPAK SO8 double cooling, 0.58m @ 10V 0.82m @ 4.5V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR220DP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 100A; Idm: 500A Mounting: SMD On-state resistance: 820µΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Kind of package: reel; tape Gate charge: 200nC Technology: TrenchFET® Kind of channel: enhanced Pulsed drain current: 500A Drain-source voltage: 25V Drain current: 100A | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR220DP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 25-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87.7A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR220DP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 100A; Idm: 500A Mounting: SMD On-state resistance: 820µΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Kind of package: reel; tape Gate charge: 200nC Technology: TrenchFET® Kind of channel: enhanced Pulsed drain current: 500A Drain-source voltage: 25V Drain current: 100A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR220EP-T1-RE3 | VISHAY | Description: VISHAY - SIDR220EP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 25 V, 415 A, 0.00048 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 415A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR Verlustleistung: 150W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 480µohm SVHC: No SVHC (08-Jul-2021) | auf Bestellung 5390 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR220EP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 25 V (D-S) 175C MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 92.8A (Ta), 415A (Tc) Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 415W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V | auf Bestellung 5988 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR220EP-T1-RE3 | VISHAY | Description: VISHAY - SIDR220EP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 25 V, 415 A, 0.00048 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 415A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 150W Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR Verlustleistung: 150W Bauform - Transistor: PowerPAK SO Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 480µohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 480µohm SVHC: No SVHC (08-Jul-2021) | auf Bestellung 5390 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR220EP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 25 V (D-S) 175C MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 92.8A (Ta), 415A (Tc) Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 415W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR220EP-T1-RE3 | Vishay | MOSFET N-CHANNEL 25-V (D-S) 175C MOSF | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR390DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 69.9A/100A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR390DP-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 69.9A 8-Pin PowerPAK SO EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR390DP-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 69.9A 8-Pin PowerPAK SO EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR390DP-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR390DP-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR390DP-T1-GE3 | VISHAY | Description: VISHAY - SIDR390DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 650 µohm, PowerPAK SO, Oberflächenmontage SVHC: Lead (19-Jan-2021) | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR390DP-T1-GE3 | Vishay Semiconductors | MOSFET 30V Vds 20V Vgs PowerPAK SO-8DC | auf Bestellung 1846 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR390DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 69.9A/100A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V | auf Bestellung 4987 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR390DP-T1-GE3 | VISHAY | Description: VISHAY - SIDR390DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 650 µohm, PowerPAK SO, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 100 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 125 Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8 Produktpalette: TrenchFET Gen IV Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 650 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 2 SVHC: Lead (19-Jan-2021) | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR390DP-T1-RE3 | Vishay / Siliconix | MOSFET N-CHANNEL 30-V (D-S) MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR390DP-T1-RE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 69.9A/100A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR390DP-T1-RE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 69.9A/100A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V | auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR392DP-T1-GE3 | VISHAY | Description: VISHAY - SIDR392DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 470 µohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 125W Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 470µohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 470µohm SVHC: Lead (19-Jan-2021) | auf Bestellung 4849 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR392DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 82A/100A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.62mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 15 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR392DP-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 82A 8-Pin PowerPAK SO EP T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIDR392DP-T1-GE3 | Vishay Semiconductors | MOSFET 30V Vds 20V Vgs PowerPAK SO-8DC | auf Bestellung 3316 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR392DP-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 82A 8-Pin PowerPAK SO-DC EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR392DP-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 200A Power dissipation: 125W On-state resistance: 930µΩ Mounting: SMD Gate charge: 188nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR392DP-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 200A Power dissipation: 125W On-state resistance: 930µΩ Mounting: SMD Gate charge: 188nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR392DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 82A/100A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.62mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 15 V | auf Bestellung 11843 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR392DP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 200A Power dissipation: 125W On-state resistance: 930µΩ Mounting: SMD Gate charge: 188nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR392DP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 30-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.62mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 15 V | auf Bestellung 3820 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR392DP-T1-RE3 | VISHAY | Description: VISHAY - SIDR392DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 0.00047 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 470µohm SVHC: Lead (19-Jan-2021) | auf Bestellung 5061 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR392DP-T1-RE3 | Vishay / Siliconix | MOSFET N-CHANNEL 30-V (D-S) MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR392DP-T1-RE3 | Vishay | N-Channel 30-V(D-S) MOSFET PowerPAK SO8 double cooling, 0.62m @ 10V 0.93m @ 4.5V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR392DP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 200A Power dissipation: 125W On-state resistance: 930µΩ Mounting: SMD Gate charge: 188nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR392DP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 30-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.62mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR392DP-T1-RE3 | VISHAY | Description: VISHAY - SIDR392DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 0.00047 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Verlustleistung Pd: 125W Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 470µohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 470µohm SVHC: Lead (19-Jan-2021) | auf Bestellung 5061 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR402DP-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 400A Power dissipation: 125W On-state resistance: 1.16mΩ Mounting: SMD Gate charge: 165nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR402DP-T1-GE3 | Vishay | Trans MOSFET N-CH 40V 64.6A 8-Pin PowerPAK SO EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR402DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 64.6A/100A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR402DP-T1-GE3 | VISHAY | Description: VISHAY - SIDR402DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 730 µohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.3V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 730µohm SVHC: Lead (19-Jan-2021) | auf Bestellung 5984 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR402DP-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 400A Power dissipation: 125W On-state resistance: 1.16mΩ Mounting: SMD Gate charge: 165nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR402DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 64.6A/100A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR402DP-T1-GE3 | VISHAY | Description: VISHAY - SIDR402DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 730 µohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.3V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 730µohm SVHC: Lead (19-Jan-2021) | auf Bestellung 5984 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR402DP-T1-GE3 | Vishay / Siliconix | MOSFET 40V Vds 20V Vgs PowerPAK SO-8DC | auf Bestellung 4677 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR402DP-T1-GE3 | Vishay | Trans MOSFET N-CH 40V 64.6A 8-Pin PowerPAK SO EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR402DP-T1-RE3 | Vishay | MOSFET N-CHANNEL 40-V (D-S) MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR402DP-T1-RE3 | Vishay | N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR402DP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 40-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V | auf Bestellung 14272 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR402DP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 40-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR402EP-T1-RE3 | Vishay Semiconductors | MOSFET N-CHANNEL 40-V (D-S) 175C MOSFET | auf Bestellung 11850 Stücke: Lieferzeit 276-280 Tag (e) |
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| SIDR402EP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 40 V (D-S) 175C MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65.2A (Ta), 291A (Tc) Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR402EP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 40 V (D-S) 175C MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65.2A (Ta), 291A (Tc) Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR500EP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 421A; Idm: 500A Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 421A On-state resistance: 0.68mΩ Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Gate charge: 180nC Technology: TrenchFET® Kind of channel: enhanced Pulsed drain current: 500A | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR500EP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 30 V (D-S) 175C MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 94A (Ta), 421A (Tc) Rds On (Max) @ Id, Vgs: 0.47mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR500EP-T1-RE3 | VISHAY | Description: VISHAY - SIDR500EP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 30 V, 421 A, 0.00039 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 421 hazardous: false Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 150 Gate-Source-Schwellenspannung, max.: 2.2 euEccn: NLR Verlustleistung: 150 Bauform - Transistor: PowerPAK SO Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8 Produktpalette: TrenchFET Gen V Series productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 390 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 390 SVHC: No SVHC (17-Jan-2022) | auf Bestellung 5988 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR500EP-T1-RE3 | Vishay Semiconductors | MOSFET N-CHANNEL 30 V MOSFET PWRPAK | auf Bestellung 15809 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR500EP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 421A; Idm: 500A Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 421A On-state resistance: 0.68mΩ Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Gate charge: 180nC Technology: TrenchFET® Kind of channel: enhanced Pulsed drain current: 500A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR500EP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 30 V (D-S) 175C MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 94A (Ta), 421A (Tc) Rds On (Max) @ Id, Vgs: 0.47mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V | auf Bestellung 5780 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR500EP-T1-RE3 | VISHAY | Description: VISHAY - SIDR500EP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 30 V, 421 A, 0.00039 ohm, PowerPAK SO, Oberflächenmontage SVHC: No SVHC (17-Jan-2022) | auf Bestellung 5988 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR5102EP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 100 V (D-S) 175C MOSFE Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28.2A (Ta), 126A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR5102EP-T1-RE3 | VISHAY | SIDR5102EP-T1-RE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR5102EP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 100 V (D-S) 175C MOSFE Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28.2A (Ta), 126A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR510EP-T1-RE3 | Vishay Semiconductors | MOSFET N-CHANNEL 100 V MOSFET PWRPAK | auf Bestellung 4595 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR510EP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 100 V (D-S) 175C MOSFE Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 148A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 50 V | auf Bestellung 5980 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR510EP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 100 V (D-S) 175C MOSFE Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 148A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 50 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR510EP-T1-RE3 | VISHAY | SIDR510EP-T1-RE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR570EP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 150 V (D-S) 175C MOSFE Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta), 90.9A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR570EP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 90.9A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 90.9A Pulsed drain current: 200A Power dissipation: 150W Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 71nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR570EP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 90.9A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 90.9A Pulsed drain current: 200A Power dissipation: 150W Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 71nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR570EP-T1-RE3 | Vishay Semiconductors | MOSFET N-CHANNEL 150 V MOSFET PWRPAK | auf Bestellung 617 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR570EP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 150 V (D-S) 175C MOSFE Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta), 90.9A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR578EP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 150 V (D-S) 175C MOSFE Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR578EP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 150 V (D-S) 175C MOSFE Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR5802EP-T1-RE3 | VISHAY | SIDR5802EP-T1-RE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR5802EP-T1-RE3 | VISHAY | Description: VISHAY - SIDR5802EP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 80 V, 153 A, 0.0024 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 153A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 150W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen V Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0024ohm SVHC: No SVHC (17-Jan-2022) | auf Bestellung 5570 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR5802EP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 80 V (D-S) 175C MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34.2A (Ta), 153A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 40 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR5802EP-T1-RE3 | Vishay | Trans MOSFET N-CH 80V 34.2A T/R | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIDR5802EP-T1-RE3 | Vishay Semiconductors | MOSFET N-CHANNEL 80 V MOSFET PWR | auf Bestellung 2412 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR5802EP-T1-RE3 | VISHAY | Description: VISHAY - SIDR5802EP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 80 V, 153 A, 0.0024 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 153A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 150W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen V Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0024ohm SVHC: No SVHC (17-Jan-2022) | auf Bestellung 5570 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR5802EP-T1-RE3 | Vishay | Trans MOSFET N-CH 80V 34.2A T/R | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIDR5802EP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 80 V (D-S) 175C MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34.2A (Ta), 153A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 40 V | auf Bestellung 5710 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR608DP-T1-RE3 | Vishay Siliconix | Description: MOSFET N-CH 45V 51A/208A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR608DP-T1-RE3 | Vishay Semiconductors | MOSFET N-CHANNEL 45-V (D-S) MOSFET | auf Bestellung 6000 Stücke: Lieferzeit 276-280 Tag (e) |
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| SIDR608DP-T1-RE3 | VISHAY | Description: VISHAY - SIDR608DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 45 V, 208 A, 0.001 ohm, PowerPAK SO, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 45 Dauer-Drainstrom Id: 208 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 104 Gate-Source-Schwellenspannung, max.: 2.3 Verlustleistung: 104 Bauform - Transistor: PowerPAK SO Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8 Produktpalette: TrenchFET Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.001 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.001 SVHC: Lead (19-Jan-2021) | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR608DP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 208A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 45V Drain current: 208A Pulsed drain current: 400A Power dissipation: 104W On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 167nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR608DP-T1-RE3 | Vishay Siliconix | Description: MOSFET N-CH 45V 51A/208A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR608DP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 208A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 45V Drain current: 208A Pulsed drain current: 400A Power dissipation: 104W On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 167nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR608EP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 45 V (D-S) 175C MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 228A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR608EP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 45 V (D-S) 175C MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 228A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR608EP-T1-RE3 | Vishay Semiconductors | MOSFET N-CHANNEL 45-V (D-S) 175C MOSFET | auf Bestellung 12000 Stücke: Lieferzeit 276-280 Tag (e) |
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| SIDR610DP-T1-GE3 | Vishay | Trans MOSFET N-CH 200V 8.9A 8-Pin PowerPAK SO-DC EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR610DP-T1-GE3 | Vishay / Siliconix | MOSFET 200V Vds -/+20V Vgs PowerPAK SO-8DC | auf Bestellung 5295 Stücke: Lieferzeit 276-280 Tag (e) |
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| SIDR610DP-T1-GE3 | VISHAY | SIDR610DP-T1-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR610DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 200V 8.9A/39.6A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc) Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR610DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 200V 8.9A/39.6A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc) Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR610DP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 200-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc) Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR610DP-T1-RE3 | VISHAY | Description: VISHAY - SIDR610DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 200 V, 39.6 A, 0.0239 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 200 rohsCompliant: YES Dauer-Drainstrom Id: 39.6 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 125 Gate-Source-Schwellenspannung, max.: 4 euEccn: NLR Verlustleistung: 125 Bauform - Transistor: PowerPAK SO Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8 Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0239 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.0239 SVHC: Lead (19-Jan-2021) | auf Bestellung 773 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR610DP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 200-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc) Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR610DP-T1-RE3 | Vishay | N-Channel 200 V MOSFET PowerPAK SO-8 double cooling, 3.19 mΩ @ 10V 3.34 mΩ @ 7.5V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR610DP-T1-RE3 | Vishay / Siliconix | MOSFET N-CHANNEL 200-V (D-S) MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR610DP-T1-RE3 | VISHAY | SIDR610DP-T1-RE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR610DP-T1-RE3 | VISHAY | Description: VISHAY - SIDR610DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 200 V, 39.6 A, 0.0239 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 200 rohsCompliant: YES Dauer-Drainstrom Id: 39.6 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 125 Gate-Source-Schwellenspannung, max.: 4 euEccn: NLR Verlustleistung: 125 Bauform - Transistor: PowerPAK SO Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8 Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0239 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.0239 SVHC: Lead (19-Jan-2021) | auf Bestellung 773 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR610EP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 200 V (D-S) 175C MOSFE Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc) Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR610EP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 200 V (D-S) 175C MOSFE Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc) Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR622DP-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 56.7A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 56.7A Pulsed drain current: 100A Power dissipation: 125W Gate-source voltage: ±20V On-state resistance: 20.4mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR622DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 150V 64.6A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 56.7A (Tc) Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR622DP-T1-GE3 | Vishay / Siliconix | MOSFET 150V Vds 20V Vgs PowerPAK SO-8DC | auf Bestellung 5750 Stücke: Lieferzeit 276-280 Tag (e) |
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| SIDR622DP-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 56.7A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 56.7A Pulsed drain current: 100A Power dissipation: 125W Gate-source voltage: ±20V On-state resistance: 20.4mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR622DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 150V 64.6A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 56.7A (Tc) Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR622DP-T1-RE3 | Vishay / Siliconix | MOSFET N-CHANNEL 150-V (D-S) MOSFET | auf Bestellung 964 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR622DP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 56.7A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 56.7A Pulsed drain current: 100A Power dissipation: 125W Gate-source voltage: ±20V On-state resistance: 20.4mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR622DP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 150-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 56.7A (Tc) Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR622DP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 150-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 56.7A (Tc) Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR622DP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 56.7A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 56.7A Pulsed drain current: 100A Power dissipation: 125W Gate-source voltage: ±20V On-state resistance: 20.4mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR626DP-T1-GE3 | VISHAY | Description: VISHAY - SIDR626DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 0.0014 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 125W Gate-Source-Schwellenspannung, max.: 3.4V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0014ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0014ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 1942 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR626DP-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 100A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 200A Power dissipation: 80W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR626DP-T1-GE3 | Vishay | Trans MOSFET N-CH 60V 42.8A 8-Pin PowerPAK SO-DC EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR626DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 42.8A/100A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42.8A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR626DP-T1-GE3 | Vishay / Siliconix | MOSFET 60V Vds 20V Vgs PowerPAK SO-8DC | auf Bestellung 24916 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR626DP-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 100A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 200A Power dissipation: 80W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR626DP-T1-GE3 | VISHAY | Description: VISHAY - SIDR626DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 0.0014 ohm, PowerPAK SO, Oberflächenmontage Verlustleistung: 125 Kanaltyp: n-Kanal Drain-Source-Durchgangswiderstand: 0.0014 Qualifikation: - SVHC: Lead (19-Jan-2021) | auf Bestellung 17239 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR626DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 42.8A/100A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42.8A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR626DP-T1-GE3-X | Vishay | Vishay | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR626DP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 100A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 200A Power dissipation: 125W Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR626DP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 60-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42.8A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V | auf Bestellung 8722 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR626DP-T1-RE3 | Vishay / Siliconix | MOSFET N-CHANNEL 60-V (D-S) MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR626DP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 100A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 200A Power dissipation: 125W Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR626DP-T1-RE3 | Vishay | N-Channel 60 V (D-S) MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR626DP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 60-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42.8A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR626EP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 60 V (D-S) 175C MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50.8A (Ta), 227A (Tc) Rds On (Max) @ Id, Vgs: 1.74mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR626EP-T1-RE3 | VISHAY | Description: VISHAY - SIDR626EP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 60 V, 227 A, 0.00145 ohm, PowerPAK SO-DC, Oberflächenmontage tariffCode: 85412900 productTraceability: No Verlustleistung: 150 Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.00145 Qualifikation: - usEccn: EAR99 | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR626EP-T1-RE3 | Vishay Semiconductors | MOSFET N-CHANNEL 60 V MOSFET PWRPAK | auf Bestellung 14189 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR626EP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 60 V (D-S) 175C MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50.8A (Ta), 227A (Tc) Rds On (Max) @ Id, Vgs: 1.74mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V | auf Bestellung 2027 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR626EP-T1-RE3 | VISHAY | Description: VISHAY - SIDR626EP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 60 V, 227 A, 0.00145 ohm, PowerPAK SO-DC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60 Dauer-Drainstrom Id: 227 hazardous: false Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 150 Gate-Source-Schwellenspannung, max.: 4 euEccn: NLR Verlustleistung: 150 Bauform - Transistor: PowerPAK SO-DC Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8 Produktpalette: TrenchFET Gen IV Series productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.00145 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.00145 SVHC: No SVHC (17-Jan-2022) | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR626LDP-T1-RE3 | VISHAY | Description: VISHAY - SIDR626LDP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 60 V, 204 A, 0.0012 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 204A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0012ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 3592 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR626LDP-T1-RE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 45.6A/2.4A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V | auf Bestellung 15628 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR626LDP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 204A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 204A Pulsed drain current: 300A Power dissipation: 125W Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: SMD Gate charge: 135nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR626LDP-T1-RE3 | VISHAY | Description: VISHAY - SIDR626LDP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 60 V, 204 A, 0.0012 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 204A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0012ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 3592 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR626LDP-T1-RE3 | Vishay | Trans MOSFET N-CH 60V 45.6A 8-Pin PowerPAK SO-DC EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR626LDP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 204A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 204A Pulsed drain current: 300A Power dissipation: 125W Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: SMD Gate charge: 135nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR626LDP-T1-RE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 45.6A/2.4A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR626LDP-T1-RE3 | Vishay / Siliconix | MOSFET 60V N-CHANNEL MOSFET | auf Bestellung 42 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR626LEP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 60 V (D-S) 175C MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48.7A (Ta), 218A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR626LEP-T1-RE3 | Vishay | Trans MOSFET N-CH 60V 48.7A 8-Pin PowerPAK SO-DC EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR626LEP-T1-RE3 | VISHAY | Description: VISHAY - SIDR626LEP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 60 V, 218 A, 0.0012 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 218A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 150W Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 150W Bauform - Transistor: PowerPAK SO Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0012ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0012ohm SVHC: To Be Advised | auf Bestellung 8199 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR626LEP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 218A; Idm: 300A Mounting: SMD Drain-source voltage: 60V Drain current: 218A On-state resistance: 2.1mΩ Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Kind of package: reel; tape Gate charge: 135nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR626LEP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 60 V (D-S) 175C MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48.7A (Ta), 218A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR626LEP-T1-RE3 | Vishay | MOSFET N-CHANNEL 60-V (D-S) 175C MOSF | auf Bestellung 3178 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR626LEP-T1-RE3 | VISHAY | Description: VISHAY - SIDR626LEP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 60 V, 218 A, 0.0012 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 218A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 150W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0012ohm SVHC: To Be Advised | auf Bestellung 8199 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR626LEP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 218A; Idm: 300A Mounting: SMD Drain-source voltage: 60V Drain current: 218A On-state resistance: 2.1mΩ Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Kind of package: reel; tape Gate charge: 135nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR638DP-T1-GE3 | VISHAY | SIDR638DP-T1-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR638DP-T1-GE3 | Vishay / Siliconix | MOSFET 40V Vds 20V Vgs PowerPAK SO-8DC | auf Bestellung 8914 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR638DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 100A PPAK SO-8DC Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 20 V | auf Bestellung 4610 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR638DP-T1-GE3 | VISHAY | Description: VISHAY - SIDR638DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 730 µohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.3V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 730µohm SVHC: Lead (19-Jan-2021) | auf Bestellung 12533 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR638DP-T1-GE3 | Vishay | N-Channel 40 V (D-S) MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR638DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 100A PPAK SO-8DC Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 20 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR638DP-T1-GE3 | VISHAY | Description: VISHAY - SIDR638DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 730 µohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.3V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 730µohm SVHC: Lead (19-Jan-2021) | auf Bestellung 12533 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR638DP-T1-GE3 | Vishay | N-Channel 40 V (D-S) MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR638DP-T1-RE3 | Vishay | SIDR638DP-T1-RE3 | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR638DP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 40-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 20 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR638DP-T1-RE3 | VISHAY | SIDR638DP-T1-RE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR638DP-T1-RE3 | Vishay / Siliconix | MOSFET N-CHANNEL 40-V (D-S) MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR638DP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 40-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 20 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR668ADP-T1-RE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 23.3A/104A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.3A (Ta), 104A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 50 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR668ADP-T1-RE3 | VISHAY | Description: VISHAY - SIDR668ADP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 100 V, 104 A, 0.004 ohm, PowerPAK SO-DC, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 100 Dauer-Drainstrom Id: 104 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 125 Gate-Source-Schwellenspannung, max.: 4 Verlustleistung: 125 Bauform - Transistor: PowerPAK SO-DC Anzahl der Pins: 8 Produktpalette: TrenchFET Gen IV Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.004 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.004 SVHC: Lead (19-Jan-2021) | auf Bestellung 11800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR668ADP-T1-RE3 | VISHAY | SIDR668ADP-T1-RE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR668ADP-T1-RE3 | Vishay Semiconductors | MOSFET N-CHANNEL 100-V(D-S) PowerPAK SO-8 | auf Bestellung 32932 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR668ADP-T1-RE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 23.3A/104A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.3A (Ta), 104A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 50 V | auf Bestellung 7381 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR668ADP-T1-RE3 | VISHAY | Description: VISHAY - SIDR668ADP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 100 V, 104 A, 0.004 ohm, PowerPAK SO-DC, Durchsteckmontage Verlustleistung: 125 Transistormontage: Durchsteckmontage Kanaltyp: n-Kanal Drain-Source-Durchgangswiderstand: 0.004 Qualifikation: - SVHC: Lead (19-Jan-2021) | auf Bestellung 11800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR668DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 23.2A/95A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR668DP-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 200A Power dissipation: 125W Gate-source voltage: ±20V On-state resistance: 5.05mΩ Mounting: SMD Gate charge: 108nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR668DP-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 200A Power dissipation: 125W Gate-source voltage: ±20V On-state resistance: 5.05mΩ Mounting: SMD Gate charge: 108nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR668DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 23.2A/95A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V | auf Bestellung 10671 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR668DP-T1-GE3 | Vishay | N-Channel 100 V (D-S) MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR668DP-T1-GE3 | Vishay Semiconductors | MOSFET 100V Vds 20V Vgs PowerPAK SO-8DC | auf Bestellung 55018 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR668DP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 100-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR668DP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 100-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR668DP-T1-RE3 | Vishay / Siliconix | MOSFET N-CHANNEL 100-V (D-S) MOSFET | auf Bestellung 2900 Stücke: Lieferzeit 129-133 Tag (e) |
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| SIDR680ADP-T1-RE3 | Vishay Semiconductors | MOSFET N-Channel 80V (D-S) | auf Bestellung 7399 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR680ADP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 137A; Idm: 300A Mounting: SMD Kind of package: reel; tape Pulsed drain current: 300A Drain-source voltage: 80V Drain current: 137A On-state resistance: 3.5mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 83nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR680ADP-T1-RE3 | Vishay Siliconix | Description: MOSFET N-CH 80V 30.7A/137A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 137A (Tc) Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR680ADP-T1-RE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 137A; Idm: 300A Mounting: SMD Kind of package: reel; tape Pulsed drain current: 300A Drain-source voltage: 80V Drain current: 137A On-state resistance: 3.5mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 83nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR680ADP-T1-RE3 | Vishay | Trans MOSFET N-CH 80V 30.7A 8-Pin PowerPAK SO-DC EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR680ADP-T1-RE3 | Vishay Siliconix | Description: MOSFET N-CH 80V 30.7A/137A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 137A (Tc) Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR680DP-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 100A; Idm: 200A Mounting: SMD Kind of package: reel; tape Pulsed drain current: 200A Drain-source voltage: 80V Drain current: 100A On-state resistance: 3.4mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 105nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR680DP-T1-GE3 | Vishay | Trans MOSFET N-CH 80V 32.8A 8-Pin PowerPAK SO-DC EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR680DP-T1-GE3 | VISHAY | Description: VISHAY - SIDR680DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 80 V, 100 A, 0.0024 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 125W Gate-Source-Schwellenspannung, max.: 3.4V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0024ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0024ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR680DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 80V 32.8A/100A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V | auf Bestellung 20835 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR680DP-T1-GE3 | Vishay Semiconductors | MOSFET 80V Vds 20V Vgs PowerPAK SO-8DC | auf Bestellung 3107 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR680DP-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 100A; Idm: 200A Mounting: SMD Kind of package: reel; tape Pulsed drain current: 200A Drain-source voltage: 80V Drain current: 100A On-state resistance: 3.4mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 105nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR680DP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 80V 32.8A/100A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR680DP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 80-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR680DP-T1-RE3 | Vishay / Siliconix | MOSFET N-CHANNEL 80-V (D-S) MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR680DP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 80-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V | auf Bestellung 5949 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR680DP-T1-RE3 | Vishay | N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR870ADP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 95A PPAK SO-8DC Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 50 V | auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR870ADP-T1-GE3 | Vishay | Trans MOSFET N-CH 100V 95A 8-Pin PowerPAK SO EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR870ADP-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A Drain-source voltage: 100V Drain current: 95A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Kind of package: reel; tape Gate charge: 80nC Mounting: SMD Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR870ADP-T1-GE3 | VISHAY | Description: VISHAY - SIDR870ADP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 95 A, 0.0055 ohm, PowerPAK SO, Oberflächenmontage Verlustleistung: 125 Kanaltyp: n-Kanal Drain-Source-Durchgangswiderstand: 0.0055 Qualifikation: - SVHC: Lead (19-Jan-2021) | auf Bestellung 17705 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR870ADP-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A Drain-source voltage: 100V Drain current: 95A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Kind of package: reel; tape Gate charge: 80nC Mounting: SMD Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR870ADP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 95A PPAK SO-8DC Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 50 V | auf Bestellung 24294 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR870ADP-T1-GE3 | VISHAY | Description: VISHAY - SIDR870ADP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 95 A, 0.0066 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 95A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 125W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0055ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0066ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 15005 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| SIDR870ADP-T1-GE3 | Vishay Semiconductors | MOSFET 100V Vds 20V Vgs PowerPAK SO-8DC | auf Bestellung 96291 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR870ADP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 100-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.8A (Ta), 95A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 50 V | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR870ADP-T1-RE3 | Vishay / Siliconix | MOSFET N-CHANNEL 100-V (D-S) MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| SIDR870ADP-T1-RE3 | Vishay Siliconix | Description: N-CHANNEL 100-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.8A (Ta), 95A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 50 V | auf Bestellung 21399 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDSP-SD1280-101M | Suntsu Electronics | Дросель SMD; L = 100 мкГн; Розм = 12 x 12 x 8,1 мм; Точн., % = 20; Ic = 2,4 А; Rdc, мОм = 164; Тексп, °C = -40...+125; Екранування = Так; 12x12x8.1mm | auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIDSP-SD1280-101M | Suntsu Electronics, Inc. | Description: FIXED IND 100UH SMD 2.4A 164MOHM Tolerance: ±20% Packaging: Bulk Package / Case: Nonstandard Size / Dimension: 0.472" L x 0.472" W (12.00mm x 12.00mm) Mounting Type: Surface Mount Shielding: Shielded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 164mOhm Max Current - Saturation (Isat): 3.36A Inductance Frequency - Test: 100 kHz Height - Seated (Max): 0.317" (8.05mm) Part Status: Active Inductance: 100 µH Current Rating (Amps): 2.4 A | auf Bestellung 2070 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDSP-SD1280-330M | Suntsu Electronics, Inc. | Description: FIXED IND 33UH SMD 3.7A 67.5MOHM Packaging: Bulk Tolerance: ±20% Package / Case: Nonstandard Size / Dimension: 0.472" L x 0.472" W (12.00mm x 12.00mm) Mounting Type: Surface Mount Shielding: Shielded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 67.5mOhm Max Current - Saturation (Isat): 5.68A Inductance Frequency - Test: 100 kHz Height - Seated (Max): 0.317" (8.05mm) Part Status: Active Inductance: 33 µH Current Rating (Amps): 3.7 A | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDSP-SD1280-470M | Suntsu Electronics, Inc. | Description: FIXED IND 47UH SMD 3.3A 85.8MOHM Tolerance: ±20% Packaging: Bulk Package / Case: Nonstandard Size / Dimension: 0.472" L x 0.472" W (12.00mm x 12.00mm) Mounting Type: Surface Mount Shielding: Shielded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 85.8mOhm Max Current - Saturation (Isat): 4.6A Inductance Frequency - Test: 100 kHz Height - Seated (Max): 0.317" (8.05mm) Part Status: Active Inductance: 47 µH Current Rating (Amps): 3.3 A | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDV5545-20 | auf Bestellung 2160 Stücke: Lieferzeit 21-28 Tag (e) |