Produkte > XPN

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
XPN06103J345HT
auf Bestellung 100000 Stücke:
Lieferzeit 21-28 Tag (e)
XPN12006NC,L1XHQToshibaMOSFET POWER MOSFET TRANSISTOR
auf Bestellung 57479 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.94 EUR
10+ 1.58 EUR
100+ 1.23 EUR
500+ 1.05 EUR
1000+ 0.8 EUR
5000+ 0.76 EUR
Mindestbestellmenge: 2
XPN12006NC,L1XHQToshiba Semiconductor and StorageDescription: MOSFET N-CH 60V 20A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9952 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.92 EUR
12+ 1.57 EUR
100+ 1.22 EUR
500+ 1.04 EUR
1000+ 0.84 EUR
2000+ 0.8 EUR
Mindestbestellmenge: 10
XPN12006NC,L1XHQToshiba Semiconductor and StorageDescription: MOSFET N-CH 60V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.76 EUR
Mindestbestellmenge: 5000
XPN12006NC,L1XHQ(OTOSHIBADescription: TOSHIBA - XPN12006NC,L1XHQ(O - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 0.012 ohm, TSON Advance, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 20A
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 65W
Anzahl der Pins: 8Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.012ohm
SVHC: Lead (14-Jun-2023)
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
XPN12006NC,L1XHQ(OTOSHIBADescription: TOSHIBA - XPN12006NC,L1XHQ(O - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 0.012 ohm, TSON Advance, Oberflächenmontage
productTraceability: No
rohsCompliant: YES
Verlustleistung: 65W
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Rds(on)-Prüfspannung: 10V
hazardous: false
Drain-Source-Spannung Vds: 60V
Drain-Source-Durchgangswiderstand: 0.012ohm
rohsPhthalatesCompliant: TBA
Dauer-Drainstrom Id: 20A
Betriebstemperatur, max.: 175°C
usEccn: EAR99
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
XPN316161.132812IRenesas ElectronicsStandard Clock Oscillators XPN316161.13281 PROGRAMMABLE XO
Produkt ist nicht verfügbar
XPN316161.132812IRenesas Electronics CorporationDescription: CLCC 3.20X2.50X0.95 MM, 2.10MM P
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: HCSL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 95mA
Height - Seated (Max): 0.039" (1.00mm)
Frequency: 161.132812 MHz
Base Resonator: Crystal
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
500+12.17 EUR
Mindestbestellmenge: 500
XPN326156.250000IRenesas / IDTStandard Clock Oscillators
Produkt ist nicht verfügbar
XPN326156.250000KRenesas / IDTStandard Clock Oscillators
Produkt ist nicht verfügbar
XPN336025.000000IRenesas ElectronicsStandard Clock Oscillators XPN336025.00000 PROGRAMMABLE XO
Produkt ist nicht verfügbar
XPN336025.000000IRenesas Electronics CorporationDescription: CLCC 3.20X2.50X0.95 MM, 2.10MM P
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: HCSL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 83mA
Height - Seated (Max): 0.039" (1.00mm)
Frequency: 25 MHz
Base Resonator: Crystal
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
XPN336078.125000IRenesas ElectronicsStandard Clock Oscillators XPN336078.12500 PROGRAMMABLE XO
Produkt ist nicht verfügbar
XPN336100.000000IRenesas Electronics CorporationDescription: CLCC 3.20X2.50X0.95 MM, 2.10MM P
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: HCSL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 83mA
Height - Seated (Max): 0.039" (1.00mm)
Frequency: 100 MHz
Base Resonator: Crystal
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
XPN336100.000000IRenesas ElectronicsStandard Clock Oscillators XPN336100.00000 PROGRAMMABLE XO
Produkt ist nicht verfügbar
XPN336100.000000IRenesas / IDTStandard Clock Oscillators XPN336100.00000 PROGRAMMABLE XO
Produkt ist nicht verfügbar
XPN336156.250000IRenesas Electronics CorporationDescription: CLCC 3.20X2.50X0.95 MM, 2.10MM P
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: HCSL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 83mA
Height - Seated (Max): 0.039" (1.00mm)
Frequency: 156.25 MHz
Base Resonator: Crystal
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
XPN336156.250000IRenesas ElectronicsStandard Clock Oscillators XPN336156.25000 PROGRAMMABLE XO
Produkt ist nicht verfügbar
XPN336156.253906IRenesas ElectronicsStandard Clock Oscillators XPN3 5032 HCMOS XO LOW JITTER
Produkt ist nicht verfügbar
XPN336161.132812IRenesas Electronics CorporationDescription: XTAL OSC XO 161.132812MHZ HCSL
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: HCSL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 83mA
Height - Seated (Max): 0.047" (1.19mm)
Frequency: 161.132812 MHz
Base Resonator: Crystal
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
XPN336161.132812IRenesas ElectronicsStandard Clock Oscillators XPN336161.13281 PROGRAMMABLE XO
Produkt ist nicht verfügbar
XPN336312.500000IRenesas ElectronicsStandard Clock Oscillators XPN336312.50000 PROGRAMMABLE XO
Produkt ist nicht verfügbar
XPN336312.500000IRenesas Electronics CorporationDescription: XTAL OSC XO 312.5000MHZ HCSL SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: HCSL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 83mA
Height - Seated (Max): 0.047" (1.19mm)
Frequency: 312.5 MHz
Base Resonator: Crystal
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
XPN3R804NC,L1XHQToshiba Semiconductor and StorageDescription: MOSFET N-CH 40V 40A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 10 V
auf Bestellung 12570 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.02 EUR
11+ 1.65 EUR
100+ 1.29 EUR
500+ 1.09 EUR
1000+ 0.89 EUR
2000+ 0.84 EUR
Mindestbestellmenge: 9
XPN3R804NC,L1XHQToshibaMOSFET 100W 1MHz Automotive; AEC-Q101
auf Bestellung 8630 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.92 EUR
10+ 1.59 EUR
100+ 1.25 EUR
500+ 1.07 EUR
1000+ 0.89 EUR
Mindestbestellmenge: 2
XPN3R804NC,L1XHQToshiba Semiconductor and StorageDescription: MOSFET N-CH 40V 40A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.8 EUR
Mindestbestellmenge: 5000
XPN3R804NC,L1XHQ(OToshibaMOSFETs Silicon N-channel MOS - Automotive Version
Produkt ist nicht verfügbar
XPN536156.250000IRenesas Electronics America IncDescription: CLCC 5.00X3.20X1.10 MM, 1.27MM P
Produkt ist nicht verfügbar
XPN536156.250000IRenesas / IDTStandard Clock Oscillators XPN536156.25000 PROGRAMMABLE XO
Produkt ist nicht verfügbar
XPN6R706NC,L1XHQToshiba Semiconductor and StorageDescription: MOSFET N-CH 60V 40A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.87 EUR
10000+ 0.83 EUR
Mindestbestellmenge: 5000
XPN6R706NC,L1XHQToshibaMOSFET 100W 1MHz Automotive; AEC-Q101
auf Bestellung 3396 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.22 EUR
10+ 1.81 EUR
100+ 1.42 EUR
500+ 1.21 EUR
1000+ 0.98 EUR
2500+ 0.92 EUR
5000+ 0.88 EUR
Mindestbestellmenge: 2
XPN6R706NC,L1XHQToshiba Semiconductor and StorageDescription: MOSFET N-CH 60V 40A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
auf Bestellung 29275 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.24 EUR
10+ 1.82 EUR
100+ 1.41 EUR
500+ 1.2 EUR
1000+ 0.98 EUR
2000+ 0.92 EUR
Mindestbestellmenge: 8
XPN6R706NC,L1XHQ(OToshibaTrans MOSFET N-CH Si 60V 40A 8-Pin TSOP Advance(WF) EP T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
XPN716156.253906IRenesas ElectronicsStandard Clock Oscillators XPN716156.25390 PROGRAMMABLE XO
Produkt ist nicht verfügbar
XPN7R104NC,L1XHQToshiba Semiconductor and StorageDescription: MOSFET N-CH 40V 20A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V
Power Dissipation (Max): 840mW (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V
auf Bestellung 9050 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.95 EUR
12+ 1.6 EUR
100+ 1.24 EUR
500+ 1.05 EUR
1000+ 0.86 EUR
2000+ 0.81 EUR
Mindestbestellmenge: 10
XPN7R104NC,L1XHQToshiba Semiconductor and StorageDescription: MOSFET N-CH 40V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V
Power Dissipation (Max): 840mW (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.77 EUR
Mindestbestellmenge: 5000
XPN7R104NC,L1XHQToshibaMOSFET 65W 1MHz Automotive; AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.95 EUR
10+ 1.6 EUR
100+ 1.25 EUR
500+ 1.06 EUR
1000+ 0.86 EUR
2500+ 0.81 EUR
5000+ 0.77 EUR
Mindestbestellmenge: 2
XPN7R104NC,L1XHQ(OToshibaPOWER MOSFETs Silicon N-channel MOS - AUTOMOTIVE
Produkt ist nicht verfügbar
XPN7R104NC,L1XHQ(OTOSHIBADescription: TOSHIBA - XPN7R104NC,L1XHQ(O - Leistungs-MOSFET, n-Kanal, 40 V, 20 A, 0.0071 ohm, TSON Advance, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 20A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 65W
Bauform - Transistor: TSON Advance
Anzahl der Pins: 8Pin(s)
Produktpalette: U-MOSVIII Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0071ohm
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
XPN9R614MC,L1XHQToshibaMOSFET 100W 1MHz Automotive; AEC-Q101
auf Bestellung 17383 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.08 EUR
10+ 1.7 EUR
100+ 1.32 EUR
500+ 1.12 EUR
1000+ 0.86 EUR
Mindestbestellmenge: 2
XPN9R614MC,L1XHQToshiba Semiconductor and StorageDescription: MOSFET P-CH 40V 40A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 13147 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.02 EUR
11+ 1.66 EUR
100+ 1.29 EUR
500+ 1.09 EUR
1000+ 0.89 EUR
2000+ 0.84 EUR
Mindestbestellmenge: 9
XPN9R614MC,L1XHQToshiba Semiconductor and StorageDescription: MOSFET P-CH 40V 40A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.8 EUR
Mindestbestellmenge: 5000
XPND600Apex Tool GroupScrewdrivers, Nut Drivers & Socket Drivers Precision Nutdriver 6 Piece Set
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
XPND600Apex Tool GroupDescription: NUT DRIVER SET W/CASE 6PC
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
XPNX392PB5S5100Belden Inc.Description: FLEXPON HOUSE BOX W/100F OF QP
Packaging: Bulk
Produkt ist nicht verfügbar