auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.9 EUR |
10+ | 1.56 EUR |
100+ | 1.21 EUR |
500+ | 1.03 EUR |
1000+ | 0.79 EUR |
5000+ | 0.77 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details XPN7R104NC,L1XHQ Toshiba
Description: MOSFET N-CH 40V 20A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V, Power Dissipation (Max): 840mW (Ta), 65W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 200µA, Supplier Device Package: 8-TSON Advance-WF (3.1x3.1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V.
Weitere Produktangebote XPN7R104NC,L1XHQ nach Preis ab 0.79 EUR bis 1.92 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
XPN7R104NC,L1XHQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 20A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V Power Dissipation (Max): 840mW (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 200µA Supplier Device Package: 8-TSON Advance-WF (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V |
auf Bestellung 4045 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
XPN7R104NC,L1XHQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 20A 8TSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V Power Dissipation (Max): 840mW (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 200µA Supplier Device Package: 8-TSON Advance-WF (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V |
Produkt ist nicht verfügbar |