03N06L Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET N-CH 60V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
FET Feature: Standard
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.076 EUR |
| 15000+ | 0.069 EUR |
| 30000+ | 0.063 EUR |
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Technische Details 03N06L Goford Semiconductor
Description: MOSFET N-CH 60V 3A SOT-23-3L, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V, FET Feature: Standard, Power Dissipation (Max): 1.7W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-23-3L, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V.
Weitere Produktangebote 03N06L nach Preis ab 0.056 EUR bis 0.76 EUR
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03N06L | Hersteller : Goford Semiconductor |
Description: N60V,RD(MAX)<100M@10V,RD(MAX)<12 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V Power Dissipation (Max): 1.7W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3L Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 30 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 30 V FET Feature: Standard Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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03N06L | Hersteller : Goford Semiconductor |
Description: N60V,RD(MAX)<100M@10V,RD(MAX)<12 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V FET Feature: Standard Power Dissipation (Max): 1.7W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 30 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 30 V |
auf Bestellung 6502 Stücke: Lieferzeit 10-14 Tag (e) |
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| 03N06L | Hersteller : GOFORD Semiconductor |
N-CH 60V 3A 100mOhm/MAX at 10V, 120mOhm/MAX at 4.5V, SOT-23-3L |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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