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18N10

18N10 Goford Semiconductor

SOLDING_PROFILE.pdf Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 25A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1318 pF @ 50 V
FET Feature: Standard
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.29 EUR
15000+ 0.27 EUR
30000+ 0.24 EUR
Mindestbestellmenge: 2500
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Technische Details 18N10 Goford Semiconductor

Description: MOSFET N-CH 100V 25A TO-252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252 (DPAK), Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1318 pF @ 50 V, FET Feature: Standard, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.

Weitere Produktangebote 18N10 nach Preis ab 0.22 EUR bis 102.55 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
18N10 18N10 Hersteller : Goford Semiconductor products-detail.php?ProId=458 Description: N100V,RD(MAX)<53M@10V,RD(MAX)<63
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1318 pF @ 50 V
FET Feature: Standard
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 2296 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.16 EUR
18+ 1 EUR
100+ 0.7 EUR
500+ 0.58 EUR
1000+ 0.49 EUR
Mindestbestellmenge: 16
18N10 Hersteller : GOFORD Semiconductor products-detail.php?ProId=458 SOLDING_PROFILE.pdf N-Channel Enhancement Mode Power MOSFET
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2500+0.28 EUR
15000+ 0.25 EUR
30000+ 0.22 EUR
Mindestbestellmenge: 2500
18N-10 Hersteller : API Technologies Corp 18natt.pdf Low Power Fixed Attenuator 18GHz 10dB 2-Pin
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2+102.55 EUR
Mindestbestellmenge: 2
18N10 18N10 Hersteller : Goford Semiconductor products-detail.php?ProId=458 Description: N100V,RD(MAX)<53M@10V,RD(MAX)<63
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1318 pF @ 50 V
FET Feature: Standard
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Produkt ist nicht verfügbar
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