1N5060TR Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE AVALANCHE 400V 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.31 EUR |
| 10000+ | 0.29 EUR |
| 25000+ | 0.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 1N5060TR Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 2A SOD57, Packaging: Tape & Reel (TR), Package / Case: SOD-57, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 µs, Technology: Avalanche, Capacitance @ Vr, F: 40pF @ 0V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: SOD-57, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 400 V.
Weitere Produktangebote 1N5060TR nach Preis ab 0.21 EUR bis 0.95 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
1N5060TR | Hersteller : Vishay |
Diode Switching 400V 2A 2-Pin SOD-57 T/R |
auf Bestellung 19834 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
1N5060TR | Hersteller : Vishay |
Diode Switching 400V 2A 2-Pin SOD-57 T/R |
auf Bestellung 19834 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
1N5060TR | Hersteller : Vishay Semiconductors |
Rectifiers 2.0 Amp 400 Volt 50 Amp IFSM |
auf Bestellung 15622 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
1N5060TR | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 2A SOD57 Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Capacitance @ Vr, F: 40pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
auf Bestellung 28542 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
1N5060TR | Hersteller : Vishay |
Diode Switching 400V 2A 2-Pin SOD-57 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
1N5060TR | Hersteller : Vishay |
Rectifier Diode Switching 400V 2A 4000ns 2-Pin SOD-57 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| 1N5060TR | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 2A; reel,tape; Ifsm: 50A; SOD57; 4us Case: SOD57 Mounting: THT Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 0.4kV Features of semiconductor devices: avalanche breakdown effect; glass passivated Reverse recovery time: 4µs Load current: 2A Max. forward voltage: 1.15V Type of diode: rectifying Capacitance: 40pF Leakage current: 0.1mA Max. forward impulse current: 50A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| 1N5060TR | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 2A; reel,tape; Ifsm: 50A; SOD57; 4us Case: SOD57 Mounting: THT Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 0.4kV Features of semiconductor devices: avalanche breakdown effect; glass passivated Reverse recovery time: 4µs Load current: 2A Max. forward voltage: 1.15V Type of diode: rectifying Capacitance: 40pF Leakage current: 0.1mA Max. forward impulse current: 50A |
Produkt ist nicht verfügbar |