1N5061TAP VISHAY
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 4us
Case: SOD57
Mounting: THT
Kind of package: Ammo Pack
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Reverse recovery time: 4µs
Load current: 2A
Max. forward voltage: 1.15V
Type of diode: rectifying
Capacitance: 40pF
Leakage current: 0.1mA
Max. forward impulse current: 50A
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 4us
Case: SOD57
Mounting: THT
Kind of package: Ammo Pack
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Reverse recovery time: 4µs
Load current: 2A
Max. forward voltage: 1.15V
Type of diode: rectifying
Capacitance: 40pF
Leakage current: 0.1mA
Max. forward impulse current: 50A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
132+ | 0.54 EUR |
157+ | 0.46 EUR |
175+ | 0.41 EUR |
228+ | 0.31 EUR |
241+ | 0.3 EUR |
5000+ | 0.29 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 1N5061TAP VISHAY
Description: DIODE AVALANCHE 600V 2A SOD57, Packaging: Tape & Box (TB), Package / Case: SOD-57, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 µs, Technology: Avalanche, Capacitance @ Vr, F: 40pF @ 0V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: SOD-57, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 600 V.
Weitere Produktangebote 1N5061TAP nach Preis ab 0.29 EUR bis 0.54 EUR
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1N5061TAP | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 4us Case: SOD57 Mounting: THT Kind of package: Ammo Pack Semiconductor structure: single diode Max. off-state voltage: 0.6kV Features of semiconductor devices: avalanche breakdown effect; glass passivated Reverse recovery time: 4µs Load current: 2A Max. forward voltage: 1.15V Type of diode: rectifying Capacitance: 40pF Leakage current: 0.1mA Max. forward impulse current: 50A |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5061TAP | Hersteller : Vishay | Diode Switching 600V 2A 2-Pin SOD-57 Ammo |
Produkt ist nicht verfügbar |
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1N5061TAP | Hersteller : Vishay | Diode Switching 600V 2A 2-Pin SOD-57 Ammo |
Produkt ist nicht verfügbar |
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1N5061TAP | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 2A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Capacitance @ Vr, F: 40pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
Produkt ist nicht verfügbar |
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1N5061TAP | Hersteller : Vishay Semiconductors | Rectifiers 2.0 Amp 600 Volt 50 Amp IFSM |
Produkt ist nicht verfügbar |