Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > 1SS307E,L3F
1SS307E,L3F

1SS307E,L3F Toshiba Semiconductor and Storage

1SS307E_datasheet_en_20181116.pdf?did=28816&prodName=1SS307E Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA SC79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-79
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8000+0.035 EUR
16000+ 0.03 EUR
24000+ 0.028 EUR
56000+ 0.026 EUR
Mindestbestellmenge: 8000
Produktrezensionen
Produktbewertung abgeben

Technische Details 1SS307E,L3F Toshiba Semiconductor and Storage

Description: DIODE GEN PURP 80V 100MA SC79, Packaging: Tape & Reel (TR), Package / Case: SC-79, SOD-523, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Technology: Standard, Capacitance @ Vr, F: 6pF @ 0V, 1MHz, Current - Average Rectified (Io): 100mA, Supplier Device Package: SC-79, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA, Current - Reverse Leakage @ Vr: 10 nA @ 80 V.

Weitere Produktangebote 1SS307E,L3F nach Preis ab 0.028 EUR bis 0.21 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
1SS307E,L3F 1SS307E,L3F Hersteller : Toshiba 1SS307E_datasheet_en_20181116-1916386.pdf Diodes - General Purpose, Power, Switching Switching diode SNG Low leak current
auf Bestellung 113212 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+0.21 EUR
19+ 0.15 EUR
100+ 0.065 EUR
1000+ 0.037 EUR
8000+ 0.03 EUR
24000+ 0.028 EUR
Mindestbestellmenge: 14
1SS307E,L3F 1SS307E,L3F Hersteller : Toshiba Semiconductor and Storage 1SS307E_datasheet_en_20181116.pdf?did=28816&prodName=1SS307E Description: DIODE GEN PURP 80V 100MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-79
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
auf Bestellung 83255 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
84+0.21 EUR
115+ 0.15 EUR
214+ 0.083 EUR
500+ 0.065 EUR
1000+ 0.045 EUR
2000+ 0.037 EUR
Mindestbestellmenge: 84
1SS307E,L3F Hersteller : Toshiba 1ss307e_datasheet_en_20181116.pdf Switching Diodes Silicon Epitaxial Planar
Produkt ist nicht verfügbar