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2ED2104S06FXUMA1

2ED2104S06FXUMA1 Infineon Technologies


Infineon_2ED2104S06F_DataSheet_v02_03_EN-3360400.pdf Hersteller: Infineon Technologies
Gate Drivers LEVEL SHIFT SOI
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1000+ 1.02 EUR
2500+ 0.97 EUR
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Technische Details 2ED2104S06FXUMA1 Infineon Technologies

Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 650 V, Supplier Device Package: PG-DSO-8-69, Rise / Fall Time (Typ): 70ns, 35ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 1.1V, 1.7V, Current - Peak Output (Source, Sink): 290mA, 700mA, Part Status: Active, DigiKey Programmable: Not Verified.

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2ED2104S06FXUMA1 Hersteller : Infineon Technologies infineon-2ed2104s06f-datasheet-v02_03-en.pdf SP001896444
Produkt ist nicht verfügbar
2ED2104S06FXUMA1 Hersteller : Infineon Technologies infineon-2ed2104s06f-datasheet-v02_03-en.pdf 650 V Half Bridge Gate Driver with Integrated Bootstrap Diode
Produkt ist nicht verfügbar
2ED2104S06FXUMA1 Hersteller : Infineon Technologies infineon-2ed2104s06f-datasheet-v02_03-en.pdf 650 V Half Bridge Gate Driver with Integrated Bootstrap Diode
Produkt ist nicht verfügbar
2ED2104S06FXUMA1 2ED2104S06FXUMA1 Hersteller : Infineon Technologies Infineon-2ED2104S06F-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766af59b160554 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
2ED2104S06FXUMA1 2ED2104S06FXUMA1 Hersteller : Infineon Technologies Infineon-2ED2104S06F-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766af59b160554 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar