2ED2106S06FXUMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IC GATE DRIVER 8-DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: CMOS, TTL
High Side Voltage - Max (Bootstrap): 675 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.27 EUR |
| 5000+ | 1.23 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2ED2106S06FXUMA1 Infineon Technologies
Description: IC GATE DRIVER 8-DSO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 10V ~ 20V, Input Type: CMOS, TTL, High Side Voltage - Max (Bootstrap): 675 V, Supplier Device Package: PG-DSO-8-69, Rise / Fall Time (Typ): 100ns, 35ns, Channel Type: Independent, Driven Configuration: High-Side and Low-Side, Number of Drivers: 2, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 1.1V, 1.7V, Current - Peak Output (Source, Sink): 290mA, 700mA, Part Status: Active, DigiKey Programmable: Not Verified.
Weitere Produktangebote 2ED2106S06FXUMA1 nach Preis ab 0.88 EUR bis 2.78 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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2ED2106S06FXUMA1 | Hersteller : Infineon Technologies |
650 V high-side and low-side gate driver with integrated bootstrap diode |
auf Bestellung 210000 Stücke: Lieferzeit 14-21 Tag (e) |
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2ED2106S06FXUMA1 | Hersteller : Infineon Technologies |
650 V high-side and low-side gate driver with integrated bootstrap diode |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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2ED2106S06FXUMA1 | Hersteller : Infineon Technologies |
650 V high-side and low-side gate driver with integrated bootstrap diode |
auf Bestellung 1499 Stücke: Lieferzeit 14-21 Tag (e) |
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2ED2106S06FXUMA1 | Hersteller : Infineon Technologies |
650 V high-side and low-side gate driver with integrated bootstrap diode |
auf Bestellung 1499 Stücke: Lieferzeit 14-21 Tag (e) |
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2ED2106S06FXUMA1 | Hersteller : Infineon Technologies |
Gate Drivers LEVEL SHIFT SOI |
auf Bestellung 1465 Stücke: Lieferzeit 10-14 Tag (e) |
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2ED2106S06FXUMA1 | Hersteller : Infineon Technologies |
Description: IC GATE DRIVER 8-DSO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: CMOS, TTL High Side Voltage - Max (Bootstrap): 675 V Supplier Device Package: PG-DSO-8-69 Rise / Fall Time (Typ): 100ns, 35ns Channel Type: Independent Driven Configuration: High-Side and Low-Side Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 290mA, 700mA Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 9503 Stücke: Lieferzeit 10-14 Tag (e) |
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2ED2106S06FXUMA1 | Hersteller : INFINEON |
Description: INFINEON - 2ED2106S06FXUMA1 - Gate-Treiber, High-Side und Low-Side, IGBT, MOSFET, 8 Pin(s), SOIC tariffCode: 85423990 Sinkstrom: -A rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Anzahl der Kanäle: -Kanäle Betriebstemperatur, min.: -40°C Quellstrom: -A Versorgungsspannung, min.: 10V euEccn: NLR Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Versorgungsspannung, max.: 20V Eingabeverzögerung: 200ns Ausgabeverzögerung: 200ns Betriebstemperatur, max.: 125°C |
auf Bestellung 9870 Stücke: Lieferzeit 14-21 Tag (e) |
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2ED2106S06FXUMA1 | Hersteller : INFINEON |
Description: INFINEON - 2ED2106S06FXUMA1 - Gate-Treiber, High-Side und Low-Side, IGBT, MOSFET, 8 Pin(s), SOIC tariffCode: 85423990 Sinkstrom: -A rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Anzahl der Kanäle: -Kanäle Betriebstemperatur, min.: -40°C Quellstrom: -A Versorgungsspannung, min.: 10V euEccn: NLR Bauform - Treiber: SOIC Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Versorgungsspannung, max.: 20V Eingabeverzögerung: 200ns Ausgabeverzögerung: 200ns Betriebstemperatur, max.: 125°C |
auf Bestellung 9870 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2ED2106S06FXUMA1 | Hersteller : Infineon Technologies |
650 V high-side and low-side gate driver with integrated bootstrap diode |
Produkt ist nicht verfügbar |
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2ED2106S06FXUMA1 | Hersteller : Infineon Technologies |
650 V high-side and low-side gate driver with integrated bootstrap diode |
Produkt ist nicht verfügbar |
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2ED2106S06FXUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2 Mounting: SMD Case: PG-DSO-8 Kind of package: reel; tape Output current: -0.7...0.29A Type of integrated circuit: driver Number of channels: 2 Integrated circuit features: integrated bootstrap functionality Protection: undervoltage UVP Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Voltage class: 650V Supply voltage: 10...20V Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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2ED2106S06FXUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2 Mounting: SMD Case: PG-DSO-8 Kind of package: reel; tape Output current: -0.7...0.29A Type of integrated circuit: driver Number of channels: 2 Integrated circuit features: integrated bootstrap functionality Protection: undervoltage UVP Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Voltage class: 650V Supply voltage: 10...20V |
Produkt ist nicht verfügbar |