AFV121KGSR5 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS 50V NI1230
Packaging: Tape & Reel (TR)
Package / Case: NI-1230-4S GW
Mounting Type: Surface Mount
Frequency: 960MHz ~ 1.22GHz
Configuration: Dual
Power - Output: 1000W
Gain: 19.6dB
Technology: LDMOS
Supplier Device Package: NI-1230-4S GULL
Voltage - Rated: 112 V
Voltage - Test: 50 V
Current - Test: 100 mA
Description: RF MOSFET LDMOS 50V NI1230
Packaging: Tape & Reel (TR)
Package / Case: NI-1230-4S GW
Mounting Type: Surface Mount
Frequency: 960MHz ~ 1.22GHz
Configuration: Dual
Power - Output: 1000W
Gain: 19.6dB
Technology: LDMOS
Supplier Device Package: NI-1230-4S GULL
Voltage - Rated: 112 V
Voltage - Test: 50 V
Current - Test: 100 mA
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Technische Details AFV121KGSR5 NXP USA Inc.
Description: RF MOSFET LDMOS 50V NI1230, Packaging: Tape & Reel (TR), Package / Case: NI-1230-4S GW, Mounting Type: Surface Mount, Frequency: 960MHz ~ 1.22GHz, Configuration: Dual, Power - Output: 1000W, Gain: 19.6dB, Technology: LDMOS, Supplier Device Package: NI-1230-4S GULL, Voltage - Rated: 112 V, Voltage - Test: 50 V, Current - Test: 100 mA.
Weitere Produktangebote AFV121KGSR5
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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AFV121KGSR5 | Hersteller : NXP Semiconductors | RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1000 W Peak, 960-1215 MHz, 50 V |
Produkt ist nicht verfügbar |