AIDK12S65C5ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDiode Schottky SiC 650V 12A 3-Pin(2+Tab) TO-263 T/R Automotive AEC-Q101
auf Bestellung 940 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 34+ | 4.61 EUR |
| 35+ | 4.15 EUR |
| 100+ | 3.92 EUR |
| 250+ | 3.71 EUR |
| 500+ | 3.49 EUR |
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Technische Details AIDK12S65C5ATMA1 Infineon Technologies
Description: DISCRETE DIODES, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 363pF @ 1V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: PG-TO263-2, Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A, Current - Reverse Leakage @ Vr: 70 µA @ 650 V, Qualification: AEC-Q101.
Weitere Produktangebote AIDK12S65C5ATMA1 nach Preis ab 3.49 EUR bis 9.45 EUR
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AIDK12S65C5ATMA1 | Hersteller : Infineon Technologies |
Diode Schottky SiC 650V 12A 3-Pin(2+Tab) TO-263 T/R Automotive AEC-Q101 |
auf Bestellung 940 Stücke: Lieferzeit 14-21 Tag (e) |
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AIDK12S65C5ATMA1 | Hersteller : Infineon Technologies |
Schottky Diodes & Rectifiers SIC_DISCRETE |
auf Bestellung 932 Stücke: Lieferzeit 10-14 Tag (e) |
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AIDK12S65C5ATMA1 | Hersteller : Infineon Technologies |
Description: DISCRETE DIODES Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 363pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Current - Reverse Leakage @ Vr: 70 µA @ 650 V Qualification: AEC-Q101 |
auf Bestellung 980 Stücke: Lieferzeit 10-14 Tag (e) |
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AIDK12S65C5ATMA1 | Hersteller : Infineon Technologies |
Diode Schottky SiC 650V 12A 3-Pin(2+Tab) TO-263 T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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AIDK12S65C5ATMA1 | Hersteller : Infineon Technologies |
Rectifier Diode Schottky SiC 650V 12A T/R |
Produkt ist nicht verfügbar |
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| AIDK12S65C5ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; PG-TO263-2; 62W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: SMD Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Max. forward voltage: 2.1V Case: PG-TO263-2 Kind of package: reel; tape Leakage current: 14µA Max. forward impulse current: 40A Power dissipation: 62W Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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AIDK12S65C5ATMA1 | Hersteller : Infineon Technologies |
Description: DISCRETE DIODES Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 363pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Current - Reverse Leakage @ Vr: 70 µA @ 650 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| AIDK12S65C5ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; PG-TO263-2; 62W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: SMD Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Max. forward voltage: 2.1V Case: PG-TO263-2 Kind of package: reel; tape Leakage current: 14µA Max. forward impulse current: 40A Power dissipation: 62W |
Produkt ist nicht verfügbar |