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AIDW20S65C5XKSA1

AIDW20S65C5XKSA1 Infineon Technologies


Infineon-AIDW20S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2ecdd5689 Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 584pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 240 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+14.24 EUR
10+ 12.86 EUR
100+ 10.65 EUR
Mindestbestellmenge: 2
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Technische Details AIDW20S65C5XKSA1 Infineon Technologies

Description: DIODE SIL CARB 650V 20A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 584pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: PG-TO247-3-41, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A, Current - Reverse Leakage @ Vr: 120 µA @ 650 V.

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AIDW20S65C5XKSA1 AIDW20S65C5XKSA1 Hersteller : Infineon Technologies Infineon-AIDW20S65C5-DS-v01_03-EN-1531833.pdf Schottky Diodes & Rectifiers SIC_DISCRETE
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+14.31 EUR
10+ 12.9 EUR
25+ 12.32 EUR
100+ 10.7 EUR
240+ 10.68 EUR
AIDW20S65C5XKSA1 Hersteller : INFINEON TECHNOLOGIES Infineon-AIDW20S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2ecdd5689 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 112W; TO247-3
Case: TO247-3
Mounting: THT
Application: automotive industry
Technology: CoolSiC™ 5G; SiC
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 103A
Max. off-state voltage: 650V
Power dissipation: 112W
Type of diode: Schottky rectifying
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AIDW20S65C5XKSA1 Hersteller : INFINEON TECHNOLOGIES Infineon-AIDW20S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2ecdd5689 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 112W; TO247-3
Case: TO247-3
Mounting: THT
Application: automotive industry
Technology: CoolSiC™ 5G; SiC
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 103A
Max. off-state voltage: 650V
Power dissipation: 112W
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar