auf Bestellung 241 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 12.87 EUR |
10+ | 11.04 EUR |
25+ | 10.28 EUR |
100+ | 9.19 EUR |
240+ | 7.55 EUR |
480+ | 7.29 EUR |
1200+ | 6.95 EUR |
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Technische Details AIGW50N65F5XKSA1 Infineon Technologies
Description: IGBT 650V TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: PG-TO247-3-41, IGBT Type: Trench, Td (on/off) @ 25°C: 21ns/156ns, Switching Energy: 490µJ (on), 140µJ (off), Test Condition: 400V, 25A, 12Ohm, 15V, Gate Charge: 1018 nC, Part Status: Active, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 270 W, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote AIGW50N65F5XKSA1 nach Preis ab 9.25 EUR bis 12.95 EUR
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AIGW50N65F5XKSA1 | Hersteller : Infineon Technologies |
Description: IGBT 650V TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-3-41 IGBT Type: Trench Td (on/off) @ 25°C: 21ns/156ns Switching Energy: 490µJ (on), 140µJ (off) Test Condition: 400V, 25A, 12Ohm, 15V Gate Charge: 1018 nC Part Status: Active Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 270 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 234 Stücke: Lieferzeit 10-14 Tag (e) |
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AIGW50N65F5XKSA1 | Hersteller : Infineon Technologies | High Speed Fast IGBT Chip |
Produkt ist nicht verfügbar |
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AIGW50N65F5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 53.5A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 108nC Kind of package: tube Manufacturer series: F5 Turn-on time: 33ns Turn-off time: 162ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AIGW50N65F5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 53.5A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 108nC Kind of package: tube Manufacturer series: F5 Turn-on time: 33ns Turn-off time: 162ns |
Produkt ist nicht verfügbar |