ALD212908PAL Advanced Linear Devices Inc.
Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 0.08A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 8-PDIP
Description: MOSFET 2N-CH 10.6V 0.08A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 8-PDIP
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Technische Details ALD212908PAL Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 0.08A 8DIP, Packaging: Tube, Package / Case: 8-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Configuration: 2 N-Channel (Dual) Matched Pair, Operating Temperature: 0°C ~ 70°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 10.6V, Current - Continuous Drain (Id) @ 25°C: 80mA, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 20mV @ 10µA, Supplier Device Package: 8-PDIP.
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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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ALD212908PAL | Hersteller : Advanced Linear Devices | MOSFETs Dual N-Ch Matched Pr VGS=0.0V |
Produkt ist nicht verfügbar |