AO7800 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 190mW; SC70-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Power dissipation: 0.19W
Case: SC70-6
Gate-source voltage: ±8V
Mounting: SMD
Gate charge: 1.57nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5360 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 225+ | 0.32 EUR |
| 407+ | 0.18 EUR |
| 486+ | 0.15 EUR |
| 569+ | 0.13 EUR |
| 603+ | 0.12 EUR |
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Technische Details AO7800 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET 2N-CH 20V 0.9A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 900mA, Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V, Rds On (Max) @ Id, Vgs: 300mOhm @ 900mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SC-70-6.
Weitere Produktangebote AO7800 nach Preis ab 0.12 EUR bis 0.32 EUR
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AO7800 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 190mW; SC70-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.7A Power dissipation: 0.19W Case: SC70-6 Gate-source voltage: ±8V Mounting: SMD Gate charge: 1.57nC Kind of channel: enhanced |
auf Bestellung 5360 Stücke: Lieferzeit 14-21 Tag (e) |
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AO7800 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 0.9A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 900mA Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 900mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SC-70-6 |
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