AOD2606 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 75W; TO252
Mounting: SMD
Case: TO252
Power dissipation: 75W
Drain-source voltage: 60V
Drain current: 36A
On-state resistance: 6.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 75W; TO252
Mounting: SMD
Case: TO252
Power dissipation: 75W
Drain-source voltage: 60V
Drain current: 36A
On-state resistance: 6.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 2500 Stücke
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Technische Details AOD2606 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 60V 14A/46A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 46A (Tc), Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V, Power Dissipation (Max): 2.5W (Ta), 150W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 30 V.
Weitere Produktangebote AOD2606
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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AOD2606 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 14A/46A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 30 V |
Produkt ist nicht verfügbar |
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AOD2606 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 14A/46A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 30 V |
Produkt ist nicht verfügbar |
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AOD2606 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 75W; TO252 Mounting: SMD Case: TO252 Power dissipation: 75W Drain-source voltage: 60V Drain current: 36A On-state resistance: 6.8mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |